Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Featured manufacturers
STP16NS25 by STMicroelectronics is a N-CHANNEL FET with 250V DS breakdown voltage, ideal for SWITCHING applications. It features 64A max pulsed drain current and 0.28 ohm max drain-source resistance. Operating in enhancement mode, it has a power dissipation of 140W and can handle up to 150 °C temperature.
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$0.523
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MKK Technologies
$0.983
DigiPath Technology Company
AZTECH Wire
$22.200
Metaverse IC Inc.
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Corphita
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Parana Technologies
$0.625
Provides durability and protection for the internal components of the FET, ensuring a longer lifespan.
N-channel FETs are commonly used for high power applications, making this FET suitable for switching high currents.
With a high breakdown voltage, this FET can handle high voltages without breakdown, increasing its reliability.
Enhancement mode FETs require a positive voltage to turn on, providing control over the switching operation.
With a high pulsed drain current rating, this FET can handle surges in current without being damaged.
The high avalanche energy rating ensures that the FET can withstand high energy spikes without failing.
The high power dissipation rating allows the FET to handle high power loads without overheating.
With a high maximum operating temperature, this FET can perform reliably in high temperature environments.
Low on-resistance results in minimal power loss and heat generation during operation, making this FET efficient.
Power Field Effect Transistors (FET) STP16NS25 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics
Avalanche Energy Rating (EAS):
Configuration:
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Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Maximum Pulsed Drain Current (IDM):
Qualification:
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Transistor Element Material:
STP16NS25 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.
President, CEO
Jean-Marc Chery
President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience
Lorenzo Grandi
President, Sales & Marketing
Jerome Roux
Castelletto
Fabrication
Fab Initiation
1968
Italy
Wafer Capacity
SGFAB AMK 6
2000
Singapore
29,000
AG200
Agrate Brianza
14,000
RST 8
France
Rousset
35,000
Crolles 1
1993
Crolles
30,000
Crolles 2-ext. mod 5
Crolles 2-ext. mod 2
2022
Crolles 2-ext. mod 3
2023
Crolles 2
2004
28,000
1985
SiC Fab
2006
Sweden
Norrköping
10,000
Fab 3
2005
Tours
2,000
Fab 1 & Fab 2
1978
55,000
Fab 2
1997
Catania
SGFAB-AMK 6E
2003
145,000
SGFAB-AMJ 9
1984
152,000
AG300 (R3)
1980
25,000
1987
34,000
AG300
2024
Crolles 2-ext. mod 1
2020
Fab 1 6-inch fab
2013
11,000
SiC 6-inch line
2021
2,500
200mm GaN
2018
SGFAB-AMK 8
2001
Crolles 2- JV Fab
SGFAB-AMK 6
2016
38,125
SGFAB-AMK 2E
2010
20,000
Silicon Carbide A.B.
SiC wafer/EPI Fab
SiC Device Fab
2025
LM317T/NOPB
Texas Instruments
LM317T/NOPB by Texas Instruments is an adjustable positive single output standard regulator with a max output voltage of 37V and max input-output voltage differential of 40V. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring precise voltage regulation in electronic circuits. The package style is flange mount with three terminals for easy installation.
2N2222A
North American Philips Discrete Products Div
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
LM555CMX
National Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
LM358N
NXP Semiconductors
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
SN65HVD230DR
SN65HVD230DR by Texas Instruments is a BICMOS technology interface circuit with 1Mbps data rate, suitable for industrial applications. It operates at 3.3V, has 8 terminals in a small outline package, and can withstand temperatures from -40 to 85°C.
USB2514BI-AEZG
Standard Microsystems
BUS CONTROLLER, UNIVERSAL SERIAL BUS; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 36; Package Code: HVQCCN; Package Shape: SQUARE;
LL4148-GS08
Vishay Telefunken
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
General Diode
Minilogic Device
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .001 A;
SMBJ18CA
Micro Commercial Components
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
NC7WZ17P6X
Onsemi
The Onsemi NC7WZ17P6X is a logic gate with 2 functions, featuring a propagation delay of 13.1 ns at 1.8V supply voltage. Ideal for industrial applications, it operates b/w -40 to 85°C and has a max power supply current of 100mA. With Schmitt Trigger technology and small outline packaging, it suits compact electronic designs requiring fast signal processing.
BSS138
General Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 50 V; Qualification: Not Qualified;
LM317T
LM317T by Texas Instruments is an adjustable positive single output standard regulator with a max output voltage of 37V and max input-output voltage differential of 40V. Operating temperature ranges from 0 to 125°C, making it suitable for various applications requiring precise voltage regulation in electronic circuits. With a max output current of 1.5A, this through-hole package regulator is ideal for power supply designs where adjustable voltage levels are needed.
Weitron Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Form: GULL WING; Terminal Position: DUAL;
BAV99
Electronic Devices
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Motorola
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Maximum Collector-Base Capacitance: 8 pF;
LL4148
Continental Device India
2N7002
Inter F E T
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 7.5 ohm; Maximum Drain Current (Abs) (ID): .115 A;
1N4148WS
Tak Cheong Electronics Holdings
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
ULN2803A
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Terminal Position: DUAL; JESD-30 Code: R-PDIP-T18;
IRLML0040TRPBF
Infineon Technologies
Infineon's IRLML0040TRPBF is a N-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 15A IDM, 3.6A ID, and 0.056 ohm RDS(on). With a small outline package style and -55 to 150 °C operating range, it offers high performance in compact designs.
RJK0651DPB-00-J5
Renesas Electronics
Renesas Electronics RJK0651DPB-00-J5 is a N-CHANNEL FET with 60V DS Breakdown Voltage, 100A IDM, and 0.018 ohm RDS. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 150°C, making it suitable for high-power tasks.
FDD4243-F085P
FDD4243-F085P by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 14A, 0.044 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With a compact SMALL OUTLINE package and AEC-Q101 standard compliance, it ensures reliable performance in automotive electronics.
BSC026N08NS5ATMA1
Infineon Technologies' BSC026N08NS5ATMA1 is a power FET with N-channel configuration and built-in diode. It has a min DS breakdown voltage of 80V, max pulsed drain current of 400A, and low on-resistance of 0.0026 ohm. Ideal for switching applications in various industries.
IRLR024NTRPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Additional Features: LOGIC LEVEL COMPATIBLE, AVALANCHE RATED; Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier;
FDBL86062_F085
Fairchild Semiconductor
Fairchild Semiconductor's FDBL86062_F085 is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 300A Drain Current. Ideal for SWITCHING applications, it features an EAS of 352mJ, 0.002 ohm On Resistance, and operates in ENHANCEMENT MODE.
IRF9530
Intersil
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 88 W; Avalanche Energy Rating (EAS): 500 mJ; No. of Elements: 1;
FDS4559
FDS4559 by Onsemi is a Power FET with N-Channel and P-Channel types, ideal for switching applications. It features a 60V min DS breakdown voltage, 20A max pulsed drain current, and 0.055 ohm max drain-source resistance. With a small outline package style and matte tin terminal finish, it operates in enhancement mode up to 175°C.
IRLML0030TRPBF
Infineon's IRLML0030TRPBF is a N-CHANNEL FET with 30V DS Breakdown Voltage and 5.3A Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 1.3W Power Dissipation, and operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150 °C.
FDS9926A
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 150 Cel;
IRFR3410TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 110 W; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;
FDS2582
FDS2582 by Onsemi is a N-CHANNEL Power FET with 150V DS Breakdown Voltage. It features a built-in diode, 4.1A Drain Current, and 0.066 ohm On Resistance. Ideal for SWITCHING applications, this transistor operates in ENHANCEMENT MODE with an EAS of 252mJ and can handle up to 2.5W power dissipation.
IRF3205STRLPBF
Infineon's IRF3205STRLPBF is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 390A IDM, 264mJ EAS, and 0.008 ohm RDS(on). With ENHANCEMENT MODE operation and DRAIN connection, it offers high power dissipation of 200W in a SMALL OUTLINE package.
BSP149H6327XTSA1
Infineon Technologies' BSP149H6327XTSA1 is a N-CHANNEL Power FET with 200V DS breakdown voltage. It has a max drain current of 0.66A and operates in depletion mode. This transistor, with its small outline package style, is suitable for various applications requiring high power dissipation and temperature resistance up to 150°C.
FQD17P06TM
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 44 W; JESD-609 Code: e3; Case Connection: DRAIN;
FDS4559-F085
FDS4559-F085 by Onsemi is a N-CHANNEL Power FET for switching applications. It features 60V DS breakdown voltage, 4.5A max drain current, and 0.055 ohm max on resistance. With a small outline package style and gull wing terminals, it operates in enhancement mode at up to 150°C peak temperature.
IRF840PBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Terminal Form: THROUGH-HOLE; Operating Mode: ENHANCEMENT MODE;
IRF640
Comset Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-220AB; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Element Material: SILICON;
FDP20N50F
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Terminal Form: THROUGH-HOLE; Avalanche Energy Rating (EAS): 1110 mJ;
FDD4141
The Onsemi FDD4141 is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 100A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has low 0.0123 ohm Drain-Source Resistance and can handle up to 69W power dissipation.
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STP11NK50ZFP
STMicroelectronics
STP11NK50ZFP by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, 40A IDM, and 0.52 ohm RDS(on). Ideal for SWITCHING applications due to its 30W power dissipation, 190mJ EAS rating, and ENHANCEMENT MODE operation at up to 150°C.
STP11NK50Z
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-609 Code: e3;
STP10NK60ZFP
STP10NK60ZFP by STMicroelectronics is a N-CHANNEL power FET with 600V DS breakdown voltage. It is used for switching applications, offering a max pulsed drain current of 36A and an avalanche energy rating of 300mJ.
STP12NK80Z
STP12NK80Z by STMicroelectronics is a N-CHANNEL FET with 800V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 42A IDM, 400mJ EAS, and 0.75 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 190W at 150°C.
New Jersey Semiconductor Products
N-CHANNEL; Configuration: SINGLE; Transistor Element Material: SILICON; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): 10.5 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
STP15NK50ZFP
STP15NK50ZFP by STMicroelectronics is a N-CHANNEL FET with 500V DS breakdown voltage and 56A pulsed drain current. Ideal for switching applications, it operates in enhancement mode with 40W power dissipation and -50 to 150°C temperature range.
STP12NM50
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 110 W; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
STP12NM50FP
STP12NM50FP by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 48A IDM, 400mJ EAS, and 0.35 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max temp of 150°C and 35W power dissipation.
STP10NK70ZFP
STP10NK70ZFP by STMicroelectronics is a N-CHANNEL power FET with 700V DS breakdown voltage. It is used for switching applications, offering a max pulsed drain current of 34A and an avalanche energy rating of 350mJ.
STP12NM50FD
STP12NM50FD by STMicroelectronics is a N-CHANNEL Power FET with 500V DS Breakdown Voltage. It's ideal for SWITCHING applications, featuring 48A IDM and 0.4 ohm RDS(on). Operating at up to 150°C, it offers a max power dissipation of 160W in a RECTANGULAR package.
STP12NM50FDFP
STP12NM50FDFP by STMicroelectronics is a power FET with N-channel configuration and built-in diode. It has a min DS breakdown voltage of 500V, making it suitable for switching applications. With a max pulsed drain current of 48A and an avalanche energy rating of 400mJ, it offers high performance in power dissipation and temperature resistance.
STP12NM50N
STP12NM50N by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, 44A IDM, and 0.38 ohm RDS(on). Ideal for SWITCHING applications due to its 100W power dissipation and ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with Matte Tin finish, suitable for high-temp environments up to 150°C.
STP13NK60Z
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 135 W; Package Style (Meter): FLANGE MOUNT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
STP120N4F6
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 110 W; Package Shape: RECTANGULAR; Qualification: Not Qualified;
STP150N10F7AG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Transistor Element Material: SILICON; Transistor Application: SWITCHING;
STP150N10F7
STP150N10F7 by STMicroelectronics is a power FET with N-channel configuration and built-in diode. It has a min DS breakdown voltage of 100V, max pulsed drain current of 440A, and avalanche energy rating of 495mJ. This transistor is commonly used for switching applications.
STP11NM60ND
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: THROUGH-HOLE;
STP16NF06L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 45 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Qualification: Not Qualified;
STP105N3LL
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 140 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Elements: 1;
STP15N80K5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 190 W; Transistor Element Material: SILICON; JESD-30 Code: R-PSFM-T3;
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