Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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STD4NK50Z-1
STMicroelectronics
STD4NK50Z-1 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 12A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic circuits.
120 mJ
SINGLE WITH BUILT-IN DIODE
500 V
3 A
2.7 ohm
METAL-OXIDE SEMICONDUCTOR
TO-251AA
R-PSIP-T3
e3
1
3
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
IN-LINE
N-CHANNEL
45 W
12 A
Not Qualified
FET General Purpose Power
NO
MATTE TIN
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
STP10NK70Z
STP10NK70Z by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 700V breakdown voltage, 34A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
350 mJ
700 V
8.6 A
.85 ohm
TO-220AB
R-PSFM-T3
FLANGE MOUNT
150 W
34 A
STP150NF55
STP150NF55 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 120 A, breakdown voltage of 55 V, and operates at up to 175 °C. Ideal for high-efficiency power management in various electronic devices.
850 mJ
DRAIN
55 V
120 A
.006 ohm
175 Cel
300 W
480 A
TIN
STP17NK40Z
STP17NK40Z by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 400V breakdown voltage, 15A max drain current, and 150W power dissipation. Ideal for high-efficiency circuits in various electronic devices.
450 mJ
400 V
15 A
.25 ohm
60 A
STP4NK50ZFP
STP4NK50ZFP by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 500V breakdown voltage and 12A max pulsed drain current. It operates in enhancement mode with a max power dissipation of 20W. This versatile transistor is suitable for high-temperature environments up to 150 °C.
ISOLATED
20 W
STP4NK50Z
STP4NK50Z by STMicroelectronics is an N-channel FET designed for switching applications, featuring a 500V breakdown voltage and a max drain current of 3A. It operates in enhancement mode with a power dissipation of up to 45W. Ideal for high-voltage circuits, it ensures reliable performance in compact designs.
STW150NF55
STW150NF55 by STMicroelectronics is a powerful N-channel FET designed for switching applications, featuring a max drain current of 120 A and a breakdown voltage of 55 V. It operates in enhancement mode with low on-resistance (0.006 Ω). Ideal for high-efficiency power management in various electronic devices.
TO-247
STW200NF03
STW200NF03 from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a max drain current of 120 A and a breakdown voltage of 30 V. It operates in enhancement mode with low on-resistance of 0.0028 Ω. This robust transistor supports high power dissipation up to 350 W.
4000 mJ
30 V
.0028 ohm
TO-247AC
350 W
STP80PF55
STP80PF55 by STMicroelectronics is a P-CHANNEL FET with 55V DS Breakdown Voltage, 320A IDM, and 0.018 ohm RDS(on). Ideal for SWITCHING applications, it has a max power dissipation of 300W and operates at up to 175°C.
1400 mJ
80 A
.018 ohm
P-CHANNEL
320 A
Other Transistors
Matte Tin (Sn)
STD4NK80Z-1
STD4NK80Z-1 by STMicroelectronics is a N-channel power FET with 800V DS breakdown voltage. It features 12A max pulsed drain current and 3.5 ohm max RDS(on). Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 80W.
AVALANCHE RATED
190 mJ
800 V
3.5 ohm
80 W
STP11NM80
STP11NM80 by STMicroelectronics is a N-CHANNEL Power FET with 800V DS Breakdown Voltage, ideal for SWITCHING applications. It features 44A IDM, 400mJ EAS, and 0.4 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 205W at 150°C.
ULTRA-LOW RESISTANCE
400 mJ
11 A
.4 ohm
205 W
44 A
NTP65N02R
Onsemi
NTP65N02R by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, 160A IDM, and 0.0105 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Package style: FLANGE MOUNT, operating temp: 150 °C, and EAS of 60mJ make it suitable for high-power tasks.
60 mJ
25 V
65 A
7.6 A
.0105 ohm
e0
235
78 W
160 A
TIN LEAD
STB4NK60Z-1
STB4NK60Z-1 by STMicroelectronics is a N-channel Power FET with 600V DS breakdown voltage, 16A IDM, and 2 ohm RDS(on). It is used for switching applications in enhancement mode with a max power dissipation of 70W.
600 V
4 A
2 ohm
TO-262AA
70 W
16 A
IPI04N03LA
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 107 W; No. of Terminals: 3; Maximum Pulsed Drain Current (IDM): 385 A;
LOGIC LEVEL COMPATIBLE
290 mJ
.0067 ohm
107 W
385 A
IPP03N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; No. of Terminals: 3; Transistor Element Material: SILICON;
960 mJ
.0044 ohm
IPP04N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 107 W; No. of Elements: 1; Maximum Drain Current (ID): 80 A;
SPI80N10L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; No. of Terminals: 3; Maximum Operating Temperature: 175 Cel;
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
700 mJ
100 V
.024 ohm
250 W
SPP80N10L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; JESD-30 Code: R-PSFM-T3; Package Body Material: PLASTIC/EPOXY;
SPU30N03S2L-10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 82 W; Maximum Operating Temperature: 175 Cel; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
150 mJ
30 A
.0146 ohm
TO-251
82 W
STB6NK60Z-1
STB6NK60Z-1 by STMicroelectronics is a N-channel Power FET with 600V DS breakdown voltage, 24A IDM, and 1.2 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 104W.
210 mJ
6 A
1.2 ohm
104 W
24 A
STE70NM60
STE70NM60 by STMicroelectronics is a N-CHANNEL Power FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 280A Max Pulsed Drain Current and 0.055ohm Max RDS(on), operating in ENHANCEMENT MODE at up to 150°C.
70 A
.055 ohm
R-PUFM-X4
4
NOT SPECIFIED
600 W
280 A
UNSPECIFIED
UPPER
NTD25P03L1
NTD25P03L1 by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 75A IDM, 200mJ EAS, and 0.08 ohm RDS(ON). With a max power dissipation of 75W and operating temperature up to 150 °C, it's suitable for various ENHANCEMENT MODE switching tasks.
200 mJ
25 A
.08 ohm
75 W
75 A
NTY100N10
NTY100N10 by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, 369A IDM, and 0.01 ohm RDS. Ideal for SWITCHING applications due to its 313W Pdiss, EAS of 500mJ, and ENHANCEMENT MODE operation. Package style is IN-LINE with TIN LEAD finish for THROUGH-HOLE mounting.
500 mJ
123 A
.01 ohm
TO-264AA
313 W
369 A
FQA9N90C
Fairchild Semiconductor
FQA9N90C by Fairchild Semiconductor is a N-CHANNEL Power FET with 900V DS Breakdown Voltage, ideal for SWITCHING applications. It features 36A Max Pulsed Drain Current and 1.4ohm Max RDS(ON), operating in ENHANCEMENT MODE at up to 150°C.
900 mJ
900 V
9 A
1.4 ohm
280 W
36 A
STD50NH02L-1
STD50NH02L-1 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 50 A, a breakdown voltage of 24 V, and operates at up to 175 °C. Ideal for high-power circuits, it ensures reliable performance with low on-resistance.
LOW THRESHOLD
280 mJ
24 V
50 A
260
60 W
200 A
FQP13N50C
FQP13N50C by Fairchild Semiconductor is a N-CHANNEL Power FET with 500V DS Breakdown Voltage and 52A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and operates in ENHANCEMENT MODE. With a max power dissipation of 195W, this transistor has a 0.48 ohm Drain-Source On Resistance and can handle up to 13A Drain Current.
860 mJ
13 A
.48 ohm
195 W
52 A
STW220NF75
STW220NF75 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 120 A, breakdown voltage of 75 V, and can handle up to 500 W power dissipation. Ideal for high-efficiency power management in various electronic devices.
2500 mJ
75 V
500 W
STP45NF3LL
STP45NF3LL by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a max drain current of 45 A and a breakdown voltage of 30 V. It operates in enhancement mode with low on-resistance of 0.02 Ω. Designed for high efficiency, it supports up to 180 A pulsed current.
241 mJ
45 A
.02 ohm
180 A
STE140NF20D
STE140NF20D by STMicroelectronics is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 140A ID. Ideal for SWITCHING applications, it features a single configuration with built-in diode, 0.012 ohm Drain-Source On Resistance, and 560A Max Pulsed Drain Current.
AVALANCHE ENERGY RATED
800 mJ
200 V
140 A
.012 ohm
560 A
NICKEL
STF17N62K3
STF17N62K3 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a 620V breakdown voltage, 60A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
315 mJ
620 V
.38 ohm
40 W
STF30N65M5
STF30N65M5 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 22A max drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
650 V
22 A
.139 ohm
30 W
88 A
STF32N65M5
STF32N65M5 from STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 650V breakdown voltage and a max drain current of 24A. It offers low on-resistance of 0.119Ω and operates at up to 150 °C. This versatile FET is suitable for high-efficiency power management.
650 mJ
.119 ohm
35 W
96 A
STI30N65M5
STI30N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, 88A IDM, and 0.139 ohm RDS(on). Ideal for SWITCHING applications due to its 140W Pdiss, EAS of 500mJ, and operating temp up to 150°C. Package style is IN-LINE with THROUGH-HOLE terminals.
140 W
STI32N65M5
STI32N65M5 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 24A max drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
STP17N62K3
STP17N62K3 from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 620V breakdown voltage and 15A max drain current. It offers a compact through-hole design with built-in diode and operates at up to 150 °C. With a power dissipation of 190W, it's perfect for high-efficiency circuits.
190 W
STP32N65M5
STP32N65M5 from STMicroelectronics is a powerful N-channel FET ideal for switching applications. It features a 650V breakdown voltage, 24A max drain current, and 150W power dissipation. Its robust design suits high-efficiency power management systems.
STW17N62K3
STW17N62K3 from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 620V breakdown voltage and 15A max drain current. It offers a low on-resistance of 0.38Ω and operates at up to 150 °C. Its robust design ensures reliable performance in demanding environments.
STW30N65M5
STW30N65M5 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 88A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
STW32N65M5
STW32N65M5 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 24A max drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
STY112N65M5
STY112N65M5 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 93A max drain current, and 450W power dissipation. Ideal for high-efficiency power management in various electronic devices.
93 A
.022 ohm
450 W
372 A
IXFH28N50Q
IXYS Corporation
IXYS Corporation's IXFH28N50Q is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 112A IDM and 0.2 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 150°C. The transistor has a PLASTIC/EPOXY body, RECTANGULAR shape, and THROUGH-HOLE terminals for easy installation.
1500 mJ
28 A
.2 ohm
TO-247AD
112 A
NTD2955-1G
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 55 W; Transistor Element Material: SILICON; Package Style (Meter): IN-LINE;
216 mJ
60 V
.18 ohm
55 W
30
NTD20P06L-1G
NTD20P06L-1G by Onsemi is a P-channel power FET with 60V DS breakdown voltage and 15.5A max drain current. Ideal for switching applications, it features a single configuration with built-in diode and operates in enhancement mode. The transistor has a 0.15 ohm max drain-source resistance and can handle up to 50A pulsed drain current.
304 mJ
15.5 A
.15 ohm
54 W
STD150NH02L-1
STD150NH02L-1 by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a max drain current of 150 A and a breakdown voltage of 24 V. It operates in enhancement mode with low on-resistance of 0.0035 Ω. This robust transistor supports high power dissipation up to 125 W.
150 A
.0035 ohm
125 W
600 A
STW20NK70Z
STW20NK70Z by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 700V breakdown voltage, 20A max drain current, and 300W power dissipation. Ideal for high-efficiency power management in various electronic devices.
20 A
.285 ohm
STP36NF06FP
STP36NF06FP from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 18 A, breakdown voltage of 60 V, and operates at up to 175 °C. Ideal for efficient power management in various electronic devices.
18 A
.04 ohm
25 W
72 A
STP36NF06L
STP36NF06L by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, 120A IDM, and 0.05 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 70W.
225 mJ
.05 ohm
STP36NF06
STP36NF06 by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a max drain current of 30 A and a breakdown voltage of 60 V. It operates in enhancement mode with a low on-resistance of 0.04 Ω. This robust transistor supports high power dissipation up to 70 W.
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