Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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STP12NK60Z
STMicroelectronics
STP12NK60Z by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 10A max drain current, and 150W power dissipation. Ideal for high-efficiency circuits in various electronic devices.
AVALANCHE RATED, HIGH RELIABILITY
260 mJ
SINGLE WITH BUILT-IN DIODE
600 V
10 A
.64 ohm
METAL-OXIDE SEMICONDUCTOR
TO-220AB
R-PSFM-T3
e3
1
3
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
150 W
40 A
Not Qualified
FET General Purpose Power
NO
TIN
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
STB200NF04L-1
STB200NF04L-1 by STMicroelectronics is a N-channel FET with 40V DS breakdown voltage, 120A max drain current, and 0.0043 ohm on-resistance. Ideal for switching applications due to its 480A pulsed drain current capability and built-in diode configuration.
1400 mJ
40 V
120 A
.0043 ohm
TO-262AA
R-PSIP-T3
e0
175 Cel
IN-LINE
300 W
480 A
TIN LEAD
STF12NM50N
STF12NM50N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 44A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
350 mJ
ISOLATED
500 V
11 A
.38 ohm
25 W
44 A
MATTE TIN
STP12NM50N
STP12NM50N by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, 44A IDM, and 0.38 ohm RDS(on). Ideal for SWITCHING applications due to its 100W power dissipation and ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with Matte Tin finish, suitable for high-temp environments up to 150°C.
100 W
Matte Tin (Sn)
STP200NF04L
STP200NF04L by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 120 A, breakdown voltage of 40 V, and power dissipation up to 300 W. Ideal for high-efficiency power management in various electronic devices.
.0038 ohm
IPI25N06S3-25
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 48 W; Transistor Application: SWITCHING; No. of Elements: 1;
AVALANCHE RATED
60 mJ
55 V
25 A
.0251 ohm
48 W
100 A
IPI25N06S3L-22
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Minimum DS Breakdown Voltage: 55 V; Package Shape: RECTANGULAR;
LOGIC LEVEL COMPATIBLE
120 mJ
.0216 ohm
260
50 W
IPP100N06S3-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Package Style (Meter): FLANGE MOUNT; Terminal Form: THROUGH-HOLE;
2390 mJ
.0033 ohm
400 A
IPP100N06S3L-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 175 Cel;
690 mJ
.0046 ohm
IPP25N06S3L-22
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Terminal Position: SINGLE; Package Shape: RECTANGULAR;
IPP80N06S3L-06
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 136 W; Avalanche Energy Rating (EAS): 250 mJ; Maximum Operating Temperature: 175 Cel;
250 mJ
80 A
.0059 ohm
136 W
320 A
NTD12N10-1G
Onsemi
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 56.6 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 12 A;
75 mJ
DRAIN
100 V
12 A
.165 ohm
NOT SPECIFIED
56.6 W
36 A
Tin (Sn)
NTP30N06LG
NTP30N06LG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 30A Drain Current, and 0.046 ohm On Resistance. Ideal for SWITCHING applications due to its 90A Pulsed Drain Current and 101mJ Avalanche Energy Rating. Package: PLASTIC/EPOXY, RECTANGULAR shape, THROUGH-HOLE terminals.
101 mJ
60 V
30 A
.046 ohm
88.2 W
90 A
NTP45N06LG
NTP45N06LG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 150A IDM, and 0.028 ohm RDS. Ideal for SWITCHING applications due to its 125W Pdiss, ENHANCEMENT MODE operation, and built-in DIODE. Suitable for high-power circuits requiring efficient switching capabilities.
240 mJ
45 A
.028 ohm
125 W
150 A
STD1NK80Z-1
STD1NK80Z-1 by STMicroelectronics is a N-channel Power FET with 800V DS breakdown voltage and 5A max pulsed drain current. Ideal for switching applications, it features a single configuration with built-in diode and operates in enhancement mode. With a package style of IN-LINE, it has an operating temperature range from -55 to 150°C.
50 mJ
800 V
1 A
16 ohm
6.7 pF
TO-251
-55 Cel
45 W
5 A
30
STF10NK50Z
STF10NK50Z by STMicroelectronics is an N-channel FET designed for switching applications, featuring a 500V breakdown voltage and 9A max drain current. It operates in enhancement mode with a low on-resistance of 0.7Ω. Ideal for high-efficiency power management solutions.
230 mJ
9 A
.7 ohm
30 W
STP10NK50Z
STP10NK50Z by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 500V breakdown voltage and a max drain current of 9A. It offers low on-resistance of 0.7Ω and operates at up to 150 °C. This versatile FET is suitable for various power management tasks.
IPU06N03LBG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 94 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Qualification: Not Qualified;
160 mJ
30 V
50 A
.0063 ohm
94 W
200 A
IPU09N03LBG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 58 W; No. of Elements: 1; Terminal Position: SINGLE;
57 mJ
.0144 ohm
TO-251AA
58 W
MLP1N06CLG
The Onsemi MLP1N06CLG is a N-CHANNEL Power FET with 59V DS Breakdown Voltage and 2.75A Drain Current. Ideal for SWITCHING applications, it features a built-in BIPOLAR TRANSISTOR, DIODE, and RESISTOR in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE at up to 150 °C, it has a max power dissipation of 30W.
80 mJ
SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR
59 V
2.75 A
.75 ohm
1.8 A
MTP20N15EG
MTP20N15EG by Onsemi is a N-CHANNEL Power FET with 150V DS Breakdown Voltage and 60A IDM. Ideal for SWITCHING applications, it features 0.13 ohm Drain-Source Resistance, 60 mJ EAS rating, and operates in ENHANCEMENT MODE up to 150 °C.
150 V
20 A
.13 ohm
60 A
MTW32N20EG
The Onsemi MTW32N20EG is a N-CHANNEL Power FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features 128A IDM, 810mJ EAS, and 0.075 ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max power dissipation of 180W and can withstand temperatures from -55 to 150 °C.
810 mJ
200 V
32 A
.075 ohm
TO-247AE
180 W
128 A
40
NTP30N20G
NTP30N20G by Onsemi is a Power FET with 200V DS Breakdown Voltage, 90A IDM, and 0.081 ohm RDS(on). Ideal for SWITCHING applications due to its N-CHANNEL configuration and ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with SILICON transistor element material.
450 mJ
.081 ohm
178 W
NTP35N15G
NTP35N15G by Onsemi is a Power FET with 150V DS Breakdown Voltage, 37A Drain Current, and 0.05 ohm On Resistance. Ideal for SWITCHING applications, it features an ENHANCEMENT MODE and 111A Pulsed Drain Current. The transistor has a max power dissipation of 178W and operates at temperatures up to 150 °C.
700 mJ
37 A
.05 ohm
111 A
NTP75N03RG
NTP75N03RG by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 25V DS Breakdown Voltage, 225A IDM, and 0.013 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 74.4W at 150 °C.
71.7 mJ
25 V
9.7 A
75 A
.013 ohm
74.4 W
225 A
NTP90N02G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 85 W; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
733 mJ
24 V
.0058 ohm
85 W
IRFP4232PBF
International Rectifier
IRFP4232PBF by International Rectifier is a N-CHANNEL Power FET with 250V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 240A and EAS of 220mJ, making it suitable for high-power operations. With a max ID of 60A and 0.0357 ohm RDS(on), this transistor offers efficient performance in ENHANCEMENT MODE operation.
HIGH RELIABILITY
220 mJ
250 V
.0357 ohm
TO-247AC
430 W
240 A
MATTE TIN OVER NICKEL
NTD50N03R-1G
NTD50N03R-1G by Onsemi is a Power FET with 25V DS Breakdown Voltage, 180A IDM, and 0.014 ohm RDS(on). Ideal for SWITCHING applications due to its N-CHANNEL configuration and ENHANCEMENT MODE operation. Features a SINGLE package with BUILT-IN DIODE in RECTANGULAR shape.
20 mJ
7.8 A
.014 ohm
180 A
NTD50N03R-35G
NTD50N03R-35G by Onsemi is a Power FET with 25V DS Breakdown Voltage, 180A IDM, and 0.014 ohm RDS(on). Ideal for SWITCHING applications, it features an N-CHANNEL configuration with a built-in diode. The transistor operates in ENHANCEMENT MODE and has a SILICON element material.
STB21NM50N-1
STB21NM50N-1 by STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 500V breakdown voltage, 72A max pulsed drain current, and operates at up to 150 °C. This versatile FET ensures efficient power management in various electronic devices.
480 mJ
18 A
.19 ohm
140 W
72 A
STB21NM60N-1
STB21NM60N-1 from STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 68A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
610 mJ
17 A
.22 ohm
68 A
STF21NM50N
STF21NM50N by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 500V breakdown voltage and 72A max pulsed drain current. It operates in enhancement mode with a low on-resistance of 0.19Ω. This robust transistor supports high power dissipation up to 30W.
STF21NM60N
STF21NM60N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 68A pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
STP21NM50N
STP21NM50N by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 500V breakdown voltage and 18A max drain current. It operates in enhancement mode with a low on-resistance of 0.19Ω. Designed for high power dissipation (140W), it's perfect for efficient power management.
STP21NM60N
STP21NM60N by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 68A pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
STW21NM50N
STW21NM50N by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 500V breakdown voltage, 72A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
TO-247
STW21NM60N
STW21NM60N by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 600V breakdown voltage and 68A pulsed drain current. It offers a low on-resistance of 0.22Ω and operates up to 150 °C. This versatile FET is suitable for high-power circuits.
TO-247AD
CAS300M17BM2
Wolfspeed
CAS300M17BM2 by Wolfspeed is a N-CHANNEL Power FET with 2 SERIES CONNECTED elements. Operating in ENHANCEMENT MODE, it features SILICON CARBIDE technology and a RECTANGULAR package. Ideal for high-power applications requiring efficiency and reliability.
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X7
2
7
UNSPECIFIED
UPPER
SILICON CARBIDE
NTD32N06L-1G
NTD32N06L-1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 90A IDM, and 0.028 ohm RDS(on). Ideal for SWITCHING applications due to its N-CHANNEL configuration and ENHANCEMENT MODE operation. The transistor has a max power dissipation of 93.75W and operates at temperatures up to 175 °C.
313 mJ
93.75 W
IRF5305LPBF
IRF5305LPBF is a P-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 110A IDM, 280mJ EAS, and 0.06 ohm RDS(on). Operating at up to 150°C, it has a power dissipation of 110W in an IN-LINE package style.
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY
280 mJ
31 A
.06 ohm
P-CHANNEL
110 W
110 A
Other Transistors
Matte Tin (Sn) - with Nickel (Ni) barrier
IPI80N06S3L-08
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 105 W; Avalanche Energy Rating (EAS): 170 mJ; Qualification: Not Qualified;
170 mJ
.0079 ohm
105 W
IPP77N06S3-09
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 107 W; Maximum Drain Current (ID): 77 A; Avalanche Energy Rating (EAS): 170 mJ;
77 A
.0091 ohm
107 W
308 A
IPP80N06S3L-08
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 105 W; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE;
STF40N20
STF40N20 by STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a max drain current of 40 A, a breakdown voltage of 200 V, and operates at up to 150 °C. Its compact design ensures efficient performance in power management systems.
.045 ohm
40 W
160 A
STF9NK80Z
STF9NK80Z by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain-source voltage of 800V, a pulsed drain current of 30A, and operates at up to 150 °C. Ideal for power management in various electronic devices.
7.5 A
1.2 ohm
35 W
STP270N04
STP270N04 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 120 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-power circuits with low on-resistance (0.0029 Ω).
1000 mJ
.0029 ohm
330 W
STP95N04
STP95N04 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-power circuits with low on-resistance (0.0065 Ω).
400 mJ
.0065 ohm
STP9NK80Z
STP9NK80Z by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a max drain current of 7.5 A and a breakdown voltage of 800 V. It operates in enhancement mode with a power dissipation of up to 150 W. This robust transistor is suitable for high-voltage circuits.
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