Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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SPI80N03S2L-04
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 188 W; Operating Mode: ENHANCEMENT MODE; Terminal Finish: MATTE TIN;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
380 mJ
SINGLE WITH BUILT-IN DIODE
30 V
80 A
.0065 ohm
METAL-OXIDE SEMICONDUCTOR
TO-262AA
R-PSIP-T3
e3
1
3
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
IN-LINE
N-CHANNEL
188 W
320 A
Not Qualified
FET General Purpose Power
NO
MATTE TIN
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
SPP10N10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Feedback Capacitance (Crss): 65 pF; Operating Mode: ENHANCEMENT MODE;
AVALANCHE RATED
60 mJ
100 V
10.3 A
.17 ohm
65 pF
TO-220AB
R-PSFM-T3
-55 Cel
FLANGE MOUNT
50 W
41.2 A
79 ns
81 ns
SPP21N10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 90 W; Minimum DS Breakdown Voltage: 100 V; Maximum Drain Current (Abs) (ID): 21 A;
130 mJ
21 A
.08 ohm
90 W
84 A
SPU11N10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Operating Mode: ENHANCEMENT MODE; Terminal Form: THROUGH-HOLE;
10.5 A
TO-251
STD10PF06-1
STMicroelectronics
STD10PF06-1 from STMicroelectronics is a P-channel FET designed for switching applications, featuring a max drain current of 10 A and a breakdown voltage of 60 V. It operates in enhancement mode with low on-resistance of 0.2 Ω. Ideal for efficient power management in compact designs.
125 mJ
DRAIN
60 V
10 A
.2 ohm
TO-251AA
P-CHANNEL
40 W
40 A
Other Transistors
TIN
STW80NF55-08
STW80NF55-08 from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a max drain current of 80 A and a breakdown voltage of 55 V. It operates in enhancement mode with low on-resistance of just 0.008 Ω. This robust transistor supports high power dissipation up to 300 W, making it suitable for demanding electronic circuits.
1000 mJ
55 V
.008 ohm
TO-247
300 W
Matte Tin (Sn)
STY140NS10
STY140NS10 from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a max drain current of 140 A and a breakdown voltage of 100 V. It operates in enhancement mode with a power dissipation of up to 450 W. This robust transistor ensures reliable performance in demanding environments, with an operating temp range of -55 °C to 175 °C.
2900 mJ
140 A
.011 ohm
450 W
560 A
SPI42N03S2L-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 64 W; Package Style (Meter): IN-LINE; Terminal Position: SINGLE;
110 mJ
42 A
.0199 ohm
260
64 W
248 A
SPP35N10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Drain Current (ID): 35 A; Terminal Finish: MATTE TIN;
245 mJ
35 A
.044 ohm
150 W
STE250NS10
STE250NS10 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 220 A, a breakdown voltage of 100 V, and operates at up to 150 °C. Ideal for high-power circuits with low on-resistance (0.0055 Ω).
800 mJ
ISOLATED
220 A
.0055 ohm
R-XUFM-X4
NOT APPLICABLE
4
150 Cel
UNSPECIFIED
NOT SPECIFIED
500 W
880 A
UPPER
STB9NK70Z-1
STB9NK70Z-1 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 700V breakdown voltage, 30A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
230 mJ
700 V
7.5 A
1.2 ohm
115 W
30 A
STP12NM50FD
STP12NM50FD by STMicroelectronics is a N-CHANNEL Power FET with 500V DS Breakdown Voltage. It's ideal for SWITCHING applications, featuring 48A IDM and 0.4 ohm RDS(on). Operating at up to 150°C, it offers a max power dissipation of 160W in a RECTANGULAR package.
400 mJ
500 V
12 A
.4 ohm
160 W
48 A
STP9NK70Z
STP9NK70Z by STMicroelectronics is a N-CHANNEL FET with 700V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 30A IDM, 230mJ EAS, and 115W Power Dissipation. Package: PLASTIC/EPOXY, RECTANGULAR shape with THROUGH-HOLE terminals.
STW14NM50FD
STW14NM50FD by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 500V breakdown voltage, 14A max drain current, and 175W power dissipation. Ideal for high-efficiency circuits in various electronic devices.
14 A
TO-247AA
175 W
56 A
STW9NK70Z
STW9NK70Z by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 700V breakdown voltage, 30A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
156 W
STE40NC60
STE40NC60 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 40A max drain current, and 460W power dissipation. Ideal for high-efficiency circuits in demanding environments.
1150 mJ
600 V
.13 ohm
R-PUFM-X4
460 W
160 A
STP5NK65Z
STP5NK65Z by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 20A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
190 mJ
650 V
5 A
1.8 ohm
85 W
20 A
IXFE80N50
IXYS Corporation
IXYS Corporation's IXFE80N50 is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 320A IDM and 6000mJ EAS, this ENHANCEMENT MODE transistor has 0.055 ohm RDS(on) and operates at up to 150°C.
6000 mJ
72 A
.055 ohm
580 W
STP9NK60ZFP
STP9NK60ZFP by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, suitable for SWITCHING applications. It features 28A Max Pulsed Drain Current and 0.95 ohm Max Drain-Source On Resistance. The transistor operates in ENHANCEMENT MODE and has a max power dissipation of 32W, making it ideal for high-power switching circuits.
235 mJ
7 A
.95 ohm
32 W
28 A
STP9NK60Z
STP9NK60Z by STMicroelectronics is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 28A IDM and 0.95 ohm RDS(on). Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 104W and can handle up to 150°C.
104 W
STD5NK50Z-1
STD5NK50Z-1 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 4.4A max drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
4.4 A
1.5 ohm
70 W
17.6 A
Matte Tin (Sn) - annealed
30
STP11NK50ZFP
STP11NK50ZFP by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, 40A IDM, and 0.52 ohm RDS(on). Ideal for SWITCHING applications due to its 30W power dissipation, 190mJ EAS rating, and ENHANCEMENT MODE operation at up to 150°C.
.52 ohm
30 W
STP11NK50Z
STP11NK50Z by STMicroelectronics is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. It features 40A max pulsed drain current and 0.52 ohm max drain-source resistance. Operating in enhancement mode, it has a power dissipation of 125W and can withstand up to 150°C temperature.
125 W
STP5NK50Z
STP5NK50Z by STMicroelectronics is a N-CHANNEL power FET with 500V DS breakdown voltage. It has a max pulsed drain current of 17.6A and an avalanche energy rating of 130mJ. This transistor is commonly used for switching applications.
FQP630TSTU
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; JESD-30 Code: R-PSFM-T3; Transistor Element Material: SILICON;
162 mJ
200 V
9 A
36 A
SFH9250L
SFH9250L by Fairchild Semiconductor is a P-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features 78A IDM and 990mJ EAS, operating in ENHANCEMENT MODE at up to 150°C. Package: PLASTIC/EPOXY, RECTANGULAR shape with THROUGH-HOLE terminals.
LOGIC LEVEL COMPATIBLE
990 mJ
19.5 A
.23 ohm
204 W
78 A
STB7NK80Z-1
STB7NK80Z-1 from STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a max drain current of 5.2 A and a breakdown voltage of 800 V. It operates in enhancement mode with a power dissipation of up to 125 W. This versatile FET is suitable for high-efficiency power management systems.
210 mJ
800 V
5.2 A
20.8 A
STP14NK60Z
STP14NK60Z by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 54A pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
300 mJ
13.5 A
.5 ohm
54 A
STP15NK50ZFP
STP15NK50ZFP by STMicroelectronics is a N-CHANNEL FET with 500V DS breakdown voltage and 56A pulsed drain current. Ideal for switching applications, it operates in enhancement mode with 40W power dissipation and -50 to 150°C temperature range.
HIGH VOLTAGE
.34 ohm
-50 Cel
STP5NK40Z
STP5NK40Z by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 400V breakdown voltage, 12A max pulsed drain current, and operates at up to 150 °C. Ideal for efficient power management in various electronic circuits.
400 V
3 A
45 W
STP7NK40ZFP
STP7NK40ZFP from STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a 400V breakdown voltage, 5.4A max drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
5.4 A
1 ohm
25 W
21.6 A
STP9NK65ZFP
STP9NK65ZFP by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 25.6A Max Pulsed Drain Current and 1.2 ohm Max RDS(on), operating in ENHANCEMENT MODE at up to 150°C.
200 mJ
6.4 A
25.6 A
STP9NK65Z
STP9NK65Z by STMicroelectronics is a N-CHANNEL Power FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 25.6A IDM, 200mJ EAS, and 1.2ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 125W at 150°C, making it suitable for high-power circuits.
STW14NK60Z
STW14NK60Z by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 54A pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
TO-247AC
STW15NK50Z
STW15NK50Z by STMicroelectronics is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. It features 56A pulsed drain current and 0.34 ohm max on-resistance, ensuring efficient operation. With a max power dissipation of 160W and operating temperature up to 150°C, it offers reliable performance in various industrial settings.
STD30PF03L-1
STD30PF03L-1 by STMicroelectronics is a P-channel MOSFET designed for efficient switching applications. It features a max drain current of 24 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for power management in various electronic devices.
850 mJ
24 A
.04 ohm
96 A
VWM350-0075P
IXYS Corporation's VWM350-0075P is a N-CHANNEL FET with 6 elements in bridge configuration. It operates in enhancement mode, with 75V DS breakdown voltage and 340A max drain current. Ideal for switching applications due to low 0.0033 ohm RDS(on) and isolated case connection.
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
75 V
340 A
.0033 ohm
R-XUFM-X24
6
24
STD38NH02L-1
STD38NH02L-1 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 38 A, a breakdown voltage of 24 V, and operates at up to 175 °C. Ideal for power management in various electronic devices.
LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
250 mJ
24 V
38 A
.0135 ohm
152 A
STP14NF12FP
STP14NF12FP by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 8.5 A, a breakdown voltage of 120 V, and operates at up to 175 °C. Ideal for power management in various electronic devices.
120 V
8.5 A
.18 ohm
34 A
STP14NF12
STP14NF12 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 14 A, a breakdown voltage of 120 V, and operates at up to 175 °C. Ideal for power management in various electronic devices.
60 W
IPI06N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83 W; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;
225 mJ
25 V
91 A
50 A
.0099 ohm
83 W
350 A
IPI09N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 63 W; Maximum Drain-Source On Resistance: .0155 ohm; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
75 mJ
65 A
.0155 ohm
63 W
IPP05N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 94 W; Maximum Drain Current (Abs) (ID): 80 A; Maximum Drain Current (ID): 80 A;
.0081 ohm
94 W
385 A
IPP06N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83 W; No. of Elements: 1; Package Shape: RECTANGULAR;
IPP09N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 63 W; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IPP14N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 46 W; Maximum Operating Temperature: 175 Cel; Qualification: Not Qualified;
.0139 ohm
46 W
210 A
IPU07N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83 W; Maximum Pulsed Drain Current (IDM): 210 A; Terminal Form: THROUGH-HOLE;
375 mJ
.0101 ohm
e0
TIN LEAD
SPP15P10P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 128 W; Terminal Form: THROUGH-HOLE; Maximum Pulsed Drain Current (IDM): 60 A;
15 A
.24 ohm
128 W
60 A
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