Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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STP14NF12 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 14 A, a breakdown voltage of 120 V, and operates at up to 175 °C. Ideal for power management in various electronic devices.
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AZTECH Wire
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$17.050
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Perfect Parts
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Parana Technologies
$1.132
Assy Fe
The plastic/epoxy body material provides durability and resistance to environmental factors, ensuring reliable performance in various applications.
N-channel transistors are known for their high efficiency and superior conductivity, making them ideal for high-speed switching applications.
The built-in diode helps in protecting the transistor from reverse voltage, enhancing reliability in switching circuits.
Designed specifically for switching applications, this FET ensures fast and reliable operation in power management systems.
With a high breakdown voltage, this FET can handle substantial voltage levels, making it suitable for high-voltage applications.
The rectangular shape aids in space-efficient mounting on PCBs, optimizing layout designs in compact electronic devices.
Through-hole mounting provides robust mechanical connections and is ideal for high-power applications, ensuring stability.
Enhancement mode FETs typically offer lower power dissipation and better control, leading to efficient performance in power supply circuits.
This high pulsed drain current rating allows the FET to handle peak loads effectively, making it suitable for applications with transient currents.
The avalanche energy rating indicates the FET's ability to withstand energy spikes without damage, enhancing its reliability in unforeseen conditions.
A maximum drain current of 14 A ensures that the FET can handle considerable load currents, making it dependable for various applications.
With three terminals, this FET is simple to integrate into designs, facilitating easy connections in circuit layouts.
A high power dissipation capability means this FET can handle substantial power levels, making it suitable for high-performance applications.
Flange mount style offers secure attachment to heatsinks or circuit boards, ensuring efficient heat dissipation for reliable operation.
MOS technology enables low on-resistance and high-speed switching, contributing to overall efficiency in electronic systems.
A high operating temperature tolerance makes this FET suitable for demanding environments, ensuring reliable performance at elevated temperatures.
Silicon provides excellent thermal stability and performance, making it a preferred choice in power electronics.
The matte tin finish helps in preventing corrosion and provides reliable electrical connectivity, enhancing long-term performance.
This dual mention strengthens the emphasis on the FET's capability to handle significant current, ensuring dependability in design.
Low on-state resistance translates to higher efficiency by reducing power losses during operation, making this FET energy-efficient.
Single terminal position simplifies integration and reduces design complexity, making it user-friendly for engineers.
Direct drain connection facilitates efficient heat dissipation and improves overall performance in power circuits.
Power Field Effect Transistors (FET) STP14NF12 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics
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STP14NF12 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.
President, CEO
Jean-Marc Chery
President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience
Lorenzo Grandi
President, Sales & Marketing
Jerome Roux
Castelletto
Fabrication
Fab Initiation
1968
Italy
Wafer Capacity
SGFAB AMK 6
2000
Singapore
29,000
AG200
Agrate Brianza
14,000
RST 8
France
Rousset
35,000
Crolles 1
1993
Crolles
30,000
Crolles 2-ext. mod 5
Crolles 2-ext. mod 2
2022
Crolles 2-ext. mod 3
2023
Crolles 2
2004
28,000
1985
SiC Fab
2006
Sweden
Norrköping
10,000
Fab 3
2005
Tours
2,000
Fab 1 & Fab 2
1978
55,000
Fab 2
1997
Catania
SGFAB-AMK 6E
2003
145,000
SGFAB-AMJ 9
1984
152,000
AG300 (R3)
1980
25,000
1987
34,000
AG300
2024
Crolles 2-ext. mod 1
2020
Fab 1 6-inch fab
2013
11,000
SiC 6-inch line
2021
2,500
200mm GaN
2018
SGFAB-AMK 8
2001
Crolles 2- JV Fab
SGFAB-AMK 6
2016
38,125
SGFAB-AMK 2E
2010
20,000
Silicon Carbide A.B.
SiC wafer/EPI Fab
SiC Device Fab
2025
SMBJ18CA
Fagor Electronica S Coop
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N2222A
Allegro MicroSystems
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
M39029/56351
Souriau-sunbank Connection Technologies
Souriau-sunbank's M39029/56351 is a CRIMP contact type backshell accessory compliant with MIL-DTL-38999. It features FEMALE gender contacts, compatible with M39029/58363 mating contacts. The insertion and removal tools required are M81969/14-10 and M22520/2-10 respectively, making it ideal for military connector applications.
1N4148WS
Taiwan Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Changzhou Starsea Electronics
BSS138LT1G
Onsemi
BSS138LT1G by Onsemi is a N-CHANNEL FET with 50V DS Breakdown Voltage, 0.2A Drain Current, and 3.5 ohm On Resistance. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Operates b/w -55 to 150 °C with small outline package style for surface mount assembly.
LL4148
Good-ark Electronics
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
SS14
Bytesonic Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002
Yangzhou Yangjie Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Terminal Form: GULL WING; Maximum Drain Current (ID): .34 A;
M24308/2-1F
Cristek Interconnects
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; No. of Rows Loaded: 2; Shell Size: 1/E; Filter Feature: NO;
BSS123,215
NXP Semiconductors
NXP Semiconductors' BSS123,215 is a N-CHANNEL FET for SWITCHING applications. Features include 100V DS Breakdown Voltage, 0.17A Drain Current, and 6 ohm On Resistance. With GULL WING terminals and ENHANCEMENT MODE operation, it's ideal for small outline packages in various electronic devices.
1N4148WT
LM555CM
Texas Instruments
LM555CM by Texas Instruments is an Analog Waveform Generation IC with a supply voltage range of 4.5V to 16V and max operating temperature of 70°C. It comes in a small outline package, suitable for applications requiring pulse generation or rectangular waveform outputs. With surface mount capability and low supply current of 15mA, it is ideal for commercial-grade electronic circuits.
BAV99
General Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
DS18B20+
Maxim Integrated
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: THROUGH HOLE MOUNT; No. of Terminals: 3; Package Shape or Style: RECTANGULAR; Maximum Operating Current: 1.5 mA; Package Equivalence Code: SIP3,.1,50;
FT232RQ-REEL
FTDI
FTDI's FT232RQ-REEL is a USB bus controller with 32 terminals, operating at 3.3-5.25V. It supports data transfer rates up to 60MBps and clock frequency of 12.02MHz, suitable for RS232/RS422/RS485 interfaces in various applications like industrial automation and communication systems.
Rfe International
USB2514BI-AEZG
Standard Microsystems
BUS CONTROLLER, UNIVERSAL SERIAL BUS; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 36; Package Code: HVQCCN; Package Shape: SQUARE;
Cinch Connectivity Solutions
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Dielectric Withstanding Voltage (V): 1750VAC; No. of Connectors: ONE; Body Depth: .375 inch;
IRLML6401
International Rectifier
IRLML6401 by International Rectifier is a P-CHANNEL FET with 12V DS Breakdown Voltage and 34A IDM. Ideal for SWITCHING applications, it features a built-in diode, 33mJ EAS rating, and -55 to 150 °C operating temperature range.
FDD4243-F085P
FDD4243-F085P by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 14A, 0.044 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With a compact SMALL OUTLINE package and AEC-Q101 standard compliance, it ensures reliable performance in automotive electronics.
BS170
Topaz Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; JESD-609 Code: e0; Maximum Operating Temperature: 150 Cel;
SIRA01DP-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's SIRA01DP-T1-GE3 is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 150A IDM, 31.2mJ EAS, and 0.0049 ohm RDS(ON). Operating from -55 to 150 °C, it has a fast ton of 42ns and toff of 98ns in a small outline package.
IRFL9014PBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; Case Connection: DRAIN; Package Style (Meter): SMALL OUTLINE;
IRF3205ZLPBF
Infineon Technologies
IRF3205ZLPBF by Infineon is a N-CHANNEL Power FET with 55V DS Breakdown Voltage and 440A IDM. Ideal for SWITCHING applications, it features a 0.0065 ohm Drain-Source On Resistance and operates in ENHANCEMENT MODE. With a max power dissipation of 170W, this transistor is designed for high-performance electronic systems.
SQ2361ES-T1_GE3
The Vishay Intertechnology SQ2361ES-T1_GE3 is a P-CHANNEL power FET with a min DS breakdown voltage of 60V. It has a max pulsed drain current of 11A and an avalanche energy rating of 7.8mJ. This transistor is suitable for applications requiring high power and efficient switching capabilities.
NTP8G202NG
NTP8G202NG by Onsemi is a single N-channel Power FET with 9A max drain current and 65W max power dissipation. Ideal for applications requiring high power handling, such as motor control systems or power supplies. Operating temperature up to 150°C ensures reliable performance in demanding environments.
IRF640
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: MATTE TIN;
IRLML0030TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; No. of Terminals: 3; Transistor Element Material: SILICON;
IRLML6402GTRPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Minimum DS Breakdown Voltage: 20 V; Transistor Application: SWITCHING;
IRF540NSTRLPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; Avalanche Energy Rating (EAS): 185 mJ; JESD-609 Code: e3;
IRFP460
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Maximum Drain Current (ID): 20 A; No. of Terminals: 3;
MSC035SMA170B
Microchip Technology
Power Field-Effect Transistors;
FDD4685
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 69 W; Maximum Operating Temperature: 150 Cel; Maximum Feedback Capacitance (Crss): 205 pF;
SQJ457EP-T1_GE3
Vishay Intertechnology's SQJ457EP-T1_GE3 is a P-CHANNEL FET with 60V DS Breakdown Voltage, 100A IDM, and 0.025 ohm RDS(ON). Ideal for power management applications in automotive electronics due to AEC-Q101 standard compliance.
IRF7341TRPBF
Infineon's IRF7341TRPBF is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 42A IDM, 140mJ EAS, and 0.05 ohm RDS(on). With a max power dissipation of 2W and operating temperature up to 150°C, it suits various high-power electronic designs.
SCT2280KEC
ROHM
ROHM's SCT2280KEC is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and can handle up to 35A pulsed drain current. With a max power dissipation of 108W and operating temperature of 175°C, it offers reliable performance in various industrial settings.
IRF7240TRPBF
IRF7240TRPBF by Infineon is a P-CHANNEL FET for switching applications. It features a 40V DS breakdown voltage, 10.5A max drain current, and 0.015 ohm max on resistance. With a small outline package style and operating temperature range of -55 to 150 °C, it's ideal for power management in various electronic devices.
ZVN0545GTA
Diodes Incorporated
ZVN0545GTA by Diodes Inc. is a N-CHANNEL FET with 450V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, 0.6A IDM, and 50 ohm RDS(on). Operating in enhancement mode, it has a max power dissipation of 2W and operates b/w -55 to +150°C.
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STP11NK50ZFP
STMicroelectronics
STP11NK50ZFP by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, 40A IDM, and 0.52 ohm RDS(on). Ideal for SWITCHING applications due to its 30W power dissipation, 190mJ EAS rating, and ENHANCEMENT MODE operation at up to 150°C.
STP11NK50Z
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-609 Code: e3;
STP10NK60ZFP
STP10NK60ZFP by STMicroelectronics is a N-CHANNEL power FET with 600V DS breakdown voltage. It is used for switching applications, offering a max pulsed drain current of 36A and an avalanche energy rating of 300mJ.
STP12NK80Z
STP12NK80Z by STMicroelectronics is a N-CHANNEL FET with 800V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 42A IDM, 400mJ EAS, and 0.75 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 190W at 150°C.
New Jersey Semiconductor Products
N-CHANNEL; Configuration: SINGLE; Transistor Element Material: SILICON; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): 10.5 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
STP15NK50ZFP
STP15NK50ZFP by STMicroelectronics is a N-CHANNEL FET with 500V DS breakdown voltage and 56A pulsed drain current. Ideal for switching applications, it operates in enhancement mode with 40W power dissipation and -50 to 150°C temperature range.
STP12NM50
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 110 W; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
STP12NM50FP
STP12NM50FP by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 48A IDM, 400mJ EAS, and 0.35 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max temp of 150°C and 35W power dissipation.
STP10NK70ZFP
STP10NK70ZFP by STMicroelectronics is a N-CHANNEL power FET with 700V DS breakdown voltage. It is used for switching applications, offering a max pulsed drain current of 34A and an avalanche energy rating of 350mJ.
STP12NM50FD
STP12NM50FD by STMicroelectronics is a N-CHANNEL Power FET with 500V DS Breakdown Voltage. It's ideal for SWITCHING applications, featuring 48A IDM and 0.4 ohm RDS(on). Operating at up to 150°C, it offers a max power dissipation of 160W in a RECTANGULAR package.
STP12NM50FDFP
STP12NM50FDFP by STMicroelectronics is a power FET with N-channel configuration and built-in diode. It has a min DS breakdown voltage of 500V, making it suitable for switching applications. With a max pulsed drain current of 48A and an avalanche energy rating of 400mJ, it offers high performance in power dissipation and temperature resistance.
STP12NM50N
STP12NM50N by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, 44A IDM, and 0.38 ohm RDS(on). Ideal for SWITCHING applications due to its 100W power dissipation and ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with Matte Tin finish, suitable for high-temp environments up to 150°C.
STP13NK60Z
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 135 W; Package Style (Meter): FLANGE MOUNT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
STP120N4F6
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 110 W; Package Shape: RECTANGULAR; Qualification: Not Qualified;
STP150N10F7AG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Transistor Element Material: SILICON; Transistor Application: SWITCHING;
STP150N10F7
STP150N10F7 by STMicroelectronics is a power FET with N-channel configuration and built-in diode. It has a min DS breakdown voltage of 100V, max pulsed drain current of 440A, and avalanche energy rating of 495mJ. This transistor is commonly used for switching applications.
STP11NM60ND
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: THROUGH-HOLE;
STP16NF06L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 45 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Qualification: Not Qualified;
STP105N3LL
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 140 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Elements: 1;
STP15N80K5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 190 W; Transistor Element Material: SILICON; JESD-30 Code: R-PSFM-T3;
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