Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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STI32N65M5 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 24A max drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
Median Price
$8.020
Lifecycle Status
Suppliers In-Stock
7
In-Stock Inventory
1k+
DigiKey
1+ parts
100+ parts
$4.000
1k+ parts
$3.438
10k+ parts
-
Digiode
$6.280
Vyrian
Anansix
Bristol Electronics
Dan-Mar Components
Microfarads
IDEA Electronic Components Group
$0.709
$0.638
Advanced Electronics
$1.050
$0.956
$0.861
MKK Technologies
$1.334
DigiPath Technology Company
Corphita
$5.949
Microchip USA
$18.312
A-Z Elektronik GmbH
Parana Technologies
$0.848
Perfect Parts
Alle Elektronik GmbH
Kepictronics
Cyclops Electronics Ltd (Excess)
The use of plastic/epoxy ensures this FET is lightweight and suitable for a wide range of applications while providing good thermal performance.
N-channel FETs generally offer lower on-resistance and higher efficiency in applications, making this product a reliable choice for high power switching.
The built-in diode provides reverse protection, which simplifies circuit design and enhances reliability.
Designed specifically for switching applications, this FET is ideal for efficiently controlling power in electronic circuits.
A high breakdown voltage allows for use in high-voltage applications, ensuring the FET can operate safely in demanding environments.
A rectangular package shape enhances space efficiency on PCB layouts, making it easier to integrate into compact designs.
Through-hole terminals provide strong mechanical connections and good thermal dissipation, ideal for robust applications.
Enhancement mode operation means a very low off-state current, enhancing energy efficiency and prolonging the life of connected components.
With a pulsed current rating of 96 A, this FET can handle high transient loads, making it suitable for applications like motor drive circuits.
A high EAS rating allows this FET to absorb energy from voltage spikes, improving circuit resilience and reducing failure risk.
A maximum continuous drain current of 24 A provides ample headroom for various applications, ensuring dependable operation under load.
Three terminals simplify integration into standard circuits while offering flexibility for different connections.
Supporting a high power dissipation capability enables this FET to handle significant power loads without overheating.
An in-line package style is convenient for insertion into PCBs, providing ease of assembly and maintenance.
MOS technology ensures high input impedance and low gate drive power, making this FET efficient and easy to control.
An operating temperature of 150 °C allows for reliable performance in high-temperature environments, broadening application possibilities.
Silicon components offer a well-balanced performance-to-cost ratio, making this FET a cost-effective choice for many applications.
Matte tin finish provides good solderability and corrosion resistance, enhancing long-term reliability in electrical connections.
Reiterating the robust maximum drain current emphasizes its capability for high-load applications and versatility.
Low on-resistance results in reduced power loss and improved efficiency, enabling better performance in power management applications.
A single terminal position allows for straightforward PCB layout and simpler circuit designs without compromising performance.
Power Field Effect Transistors (FET) STI32N65M5 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics
Additional Features:
Avalanche Energy Rating (EAS):
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Maximum Pulsed Drain Current (IDM):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
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Transistor Application:
Transistor Element Material:
STI32N65M5 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.
President, CEO
Jean-Marc Chery
President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience
Lorenzo Grandi
President, Sales & Marketing
Jerome Roux
Castelletto
Fabrication
Fab Initiation
1968
Italy
Wafer Capacity
SGFAB AMK 6
2000
Singapore
29,000
AG200
Agrate Brianza
14,000
RST 8
France
Rousset
35,000
Crolles 1
1993
Crolles
30,000
Crolles 2-ext. mod 5
Crolles 2-ext. mod 2
2022
Crolles 2-ext. mod 3
2023
Crolles 2
2004
28,000
1985
SiC Fab
2006
Sweden
Norrköping
10,000
Fab 3
2005
Tours
2,000
Fab 1 & Fab 2
1978
55,000
Fab 2
1997
Catania
SGFAB-AMK 6E
2003
145,000
SGFAB-AMJ 9
1984
152,000
AG300 (R3)
1980
25,000
1987
34,000
AG300
2024
Crolles 2-ext. mod 1
2020
Fab 1 6-inch fab
2013
11,000
SiC 6-inch line
2021
2,500
200mm GaN
2018
SGFAB-AMK 8
2001
Crolles 2- JV Fab
SGFAB-AMK 6
2016
38,125
SGFAB-AMK 2E
2010
20,000
Silicon Carbide A.B.
SiC wafer/EPI Fab
SiC Device Fab
2025
2N2222A
Semiconductor Technology
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
DS18B20U
Maxim Integrated
DS18B20U by Maxim Integrated is a 12-bit temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, offering ±0.5°C accuracy. Suitable for applications requiring digital output and surface mounting feature.
BAV99
Zetex Plc
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Hitano Enterprise
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
2N7002
Taitron Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 60 V; Package Shape: RECTANGULAR;
LL4148
Leshan Radio
RECTIFIER DIODE; Surface Mount: YES; Maximum Non Repetitive Peak Forward Current: 2 A; Maximum Reverse Recovery Time: .004 us; No. of Phases: 1; Maximum Operating Temperature: 175 Cel;
Sinyork
RECTIFIER DIODE; Surface Mount: NO; Maximum Non Repetitive Peak Forward Current: .5 A; Maximum Output Current: .15 A; Maximum Repetitive Peak Reverse Voltage: 100 V; No. of Phases: 1;
BSS138BKW,115
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; No. of Terminals: 3; Additional Features: LOGIC LEVEL COMPATIBLE;
STM32F103C8T6
STMicroelectronics
STM32F103C8T6 by STMicroelectronics is a 32-bit microcontroller with 48 terminals, operating at up to 16 MHz. It features 10-Ch 12-Bit ADC channels and 7 DMA channels, suitable for industrial applications requiring low power consumption and high-speed connectivity via CAN, I2C(2), SPI(2), USART(3), USB.
SMBJ18CA
Fairchild Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Boca Semiconductor
1N4148WS
Rochester Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM7805CT
FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %;
Jgd Semiconductors
RECTIFIER DIODE; Surface Mount: YES; Maximum Reverse Recovery Time: .006 us; Maximum Repetitive Peak Reverse Voltage: 70 V; Maximum Forward Voltage (VF): 1 V; Maximum Operating Temperature: 150 Cel;
CRCW04020000Z0ED
Vishay Intertechnology
Vishay Intertechnology's CRCW04020000Z0ED is a 0 ohm jumper resistor with METAL GLAZE/THICK FILM tech. Operating b/w -55 to 155 °C, it suits SMT applications in automotive electronics due to AEC-Q200 compliance and 0.063 W power dissipation.
Won-top Electronics
DS18B20+
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: THROUGH HOLE MOUNT; No. of Terminals: 3; Package Shape or Style: RECTANGULAR; Maximum Operating Current: 1.5 mA; Package Equivalence Code: SIP3,.1,50;
Semtech
C0603C104K5RACAUTO
KEMET Corporation
KEMET C0603C104K5RACAUTO is a ceramic capacitor with 0.1uF capacitance, rated for 50V. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for automotive applications meeting AEC-Q200 standard, it comes in SMT package with matte tin finish and wraparound terminals.
BAV99LT1G
Onsemi
BAV99LT1G by Onsemi is a series connected diode with 2 elements in a small outline package. It has a max reverse recovery time of 0.006 us and can handle up to 100V repetitive peak reverse voltage. Ideal for rectification applications, this diode operates b/w -65°C to 150°C temperature range.
IRF4905PBF
Infineon Technologies
IRF4905PBF by Infineon is a P-CHANNEL FET with 55V DS Breakdown Voltage and 260A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 200W and operates in the temperature range of -55 to 175°C.
NTTFS5116PLTAG
NTTFS5116PLTAG by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 76A and EAS of 45mJ, operating in ENHANCEMENT MODE. With a compact SQUARE package style and high power dissipation of 40W, it offers reliable performance in various electronic systems.
NTD3055L104T4G
NTD3055L104T4G by Onsemi is a power FET with 60V DS breakdown voltage, 45A IDM, and 0.104 ohm RDS(on). It is an N-channel transistor for switching applications. Operating in enhancement mode, it has a max power dissipation of 48W and can handle up to 175°C temperature.
IRFP460LC
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Additional Features: AVALANCHE RATED; Package Style (Meter): FLANGE MOUNT; No. of Elements: 1;
IRF7404TRPBF
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Feedback Capacitance (Crss): 340 pF; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IRLML6402GTRPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Minimum DS Breakdown Voltage: 20 V; Transistor Application: SWITCHING;
IRLML6401GTRPBF
IRLML6401GTRPBF by Infineon is a P-CHANNEL FET with 12V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 34A and EAS of 33mJ, suitable for high-power operations. With a small outline package style and GULL WING terminals, it operates in temperatures ranging from -55 to 150 °C.
RJK0651DPB-00#J5
Renesas Electronics
Renesas Electronics RJK0651DPB-00#J5 is a N-channel FET with 60V DS breakdown voltage, ideal for switching applications. Features include 100A max pulsed drain current, 11.7mJ avalanche energy rating, and 0.018 ohm max drain-source resistance. Its small outline package and nickel palladium gold finish make it suitable for high-power enhancement mode operations up to 150°C.
SI7469DP-T1-GE3
Vishay Intertechnology's SI7469DP-T1-GE3 is a P-channel FET with 80V DS breakdown voltage, 40A IDM, and 0.025 ohm RDS(on). Ideal for power management applications due to its 83W max power dissipation, small outline package style, and -55 to +150°C operating temperature range.
TN2510N8-G
Microchip Technology
TN2510N8-G by Microchip Technology is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 5A IDM, 1.6W Abs Power Dissipation, and operates in ENHANCEMENT MODE. With METAL-OXIDE SEMICONDUCTOR technology and -55 to 150 °C temperature range, it offers fast ton of 20ns and toff of 30ns for efficient performance.
AUIRF7759L2TR
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Drain Current (ID): 375 A; No. of Elements: 1;
AUIRFZ44NSTRR
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 94 W; JESD-609 Code: e3; Terminal Position: SINGLE;
IRF640
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: MATTE TIN;
IRFR5505TRPBF
IRFR5505TRPBF by Infineon is a P-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features 64A IDM, 150mJ EAS, and 0.11 ohm RDS(ON). With a max power dissipation of 57W and operating temperature up to 150°C, it's suitable for high-power circuits requiring efficient switching capabilities.
SI4946BEY-T1-GE3
Vishay Intertechnology's SI4946BEY-T1-GE3 is an N-channel power FET with a min DS breakdown voltage of 60V. It has a max pulsed drain current of 30A and an avalanche energy rating of 7.2mJ. This transistor is suitable for applications requiring high power dissipation and fast switching times.
SUD50P04-09L-E3
Vishay Intertechnology's SUD50P04-09L-E3 is a P-channel Power FET with 40V DS breakdown voltage and 100A IDM. Ideal for applications requiring high power dissipation, such as automotive systems or industrial equipment due to its 136W max power dissipation and -55 to 175°C operating temperature range.
IRF7416TRPBF-1
Infineon's IRF7416TRPBF-1 is a P-CHANNEL FET with 10A max drain current and 2.5W power dissipation. Ideal for applications requiring high power efficiency in surface mount configurations, such as power supplies and motor control systems operating up to 150°C.
IRF530NPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 70 W; Package Shape: RECTANGULAR; Maximum Drain Current (ID): 17 A;
IRFR9024PBF
Vishay Intertechnology's IRFR9024PBF is a P-CHANNEL FET with 60V DS Breakdown Voltage and 8.8A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 0.28 ohm On Resistance. Suitable for high-power circuits, it has a max power dissipation of 42W and can withstand temperatures from -55 to 150°C.
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Maximum Power Dissipation Ambient: 42 W; No. of Terminals: 2;
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STI30N65M5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 140 W; Maximum Operating Temperature: 150 Cel; Maximum Drain-Source On Resistance: .139 ohm;
STI300N4F6
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY;
STI30NM50N
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 190 W; Package Body Material: PLASTIC/EPOXY; Maximum Drain-Source On Resistance: .115 ohm;
STI30NM60N
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 190 W; Qualification: Not Qualified; Package Body Material: PLASTIC/EPOXY;
STI30NM60ND
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 190 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Qualification: Not Qualified;
STI33N60M2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 190 W; Terminal Form: THROUGH-HOLE; Package Shape: RECTANGULAR;
STI33N60M6
Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
STI33N65M2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 190 W; No. of Elements: 1; Transistor Application: SWITCHING;
STI34N65M5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Shape: RECTANGULAR; Transistor Element Material: SILICON; Maximum Pulsed Drain Current (IDM): 112 A;
STI35N65M5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; Package Body Material: PLASTIC/EPOXY; JESD-609 Code: e3;
STI360N4F6
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Drain Current (Abs) (ID): 120 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
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