Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Microsemi's APT40SM120B is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for switching applications. Featuring a single configuration with built-in diode, it offers 100A max pulsed drain current and 0.1 ohm max drain-source resistance. Suitable for enhancement mode operation in various power electronics systems.
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This material provides durability and protection for the internal components, ensuring a longer lifespan for the product.
N-channel FETs typically have lower on-resistance and higher efficiency compared to P-channel FETs, making them a good choice for power switching applications.
The built-in diode simplifies circuit design and can protect against reverse current flow, improving overall performance and reliability.
Designed specifically for switching applications, this FET offers fast switching speeds and can efficiently control power flow in various electronic devices.
With a high breakdown voltage, this FET can handle high voltage loads and provide reliable performance in demanding applications.
The rectangular shape allows for easy mounting and installation in circuit boards or systems, making it convenient for integration into existing designs.
Through-hole terminals offer strong mechanical connections and are compatible with traditional soldering methods, making assembly and maintenance easier.
Enhancement mode FETs are normally off devices, providing better control over power management and reducing power consumption in standby modes.
The high pulsed drain current rating allows for handling sudden spikes in current, making it suitable for applications with varying power requirements.
With a high avalanche energy rating, this FET can withstand large energy spikes and protect against voltage transients, ensuring reliable operation in harsh conditions.
Having three terminals provides easy connectivity options and flexibility in circuit design, allowing for precise control over power distribution.
The flange mount package style offers secure mounting options and can dissipate heat effectively, ensuring optimal performance and thermal management.
MOSFET technology allows for efficient power handling and low on-resistance, making it suitable for high-speed switching and power conversion applications.
Silicon carbide offers high thermal conductivity and can operate at high temperatures, providing superior performance and reliability in demanding environments.
With a minimum operating temperature of -55°C, this FET can function reliably in extreme cold conditions, making it suitable for a wide range of applications.
The high drain current rating allows for efficient power handling and can support heavy loads, making it suitable for high-power applications.
With a low on-resistance, this FET can minimize power losses and improve overall efficiency in power management applications.
Having a single terminal position simplifies circuit connections and reduces the risk of wiring errors, ensuring proper functionality and ease of use.
The drain connection allows for efficient power flow and can handle high current loads, providing reliable performance in power switching applications.
Power Field Effect Transistors (FET) APT40SM120B attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Microsemi
Avalanche Energy Rating (EAS):
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JESD-30 Code:
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APT40SM120B Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Obsolescence/ EOL - Mult Devices 16/Oct/2017
Microsemi Corporation, a wholly owned subsidiary of Microchip Technology Inc. (Nasdaq: MCHP), offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California.
STM32H750VBT6
STMicroelectronics
STM32H750VBT6 by STMicroelectronics is a 32-bit microcontroller with Cortex-M7 CPU, offering 20 timers and 16 DMA channels. It features 2 DAC and 16 ADC channels, suitable for industrial applications requiring high-speed processing up to 48 MHz. With extensive connectivity options like FDCAN, Ethernet, and USB, it provides versatile solutions in a compact package.
2N7002
Kec
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
1N4148
Micro Commercial Components
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Bkc Semiconductors
MBRS3200T3G
Onsemi
MBRS3200T3G by Onsemi is a Schottky rectifier diode with a max output current of 3A and a max forward voltage of 0.59V. It operates in temperatures ranging from -65°C to 175°C, making it suitable for power applications. The diode has a peak repetitive reverse voltage of 200V and is designed for surface mount installation in electronic circuits.
Changzhou Galaxy Century Microelectronics
RECTIFIER DIODE; Surface Mount: NO; Config: SINGLE; Peak Reflow Temperature (C): 260; No. of Phases: 1; Diode Element Material: SILICON;
MBRS340T3G
MBRS340T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.5V and output current of 4A. It operates b/w -65°C to 150°C, making it suitable for various applications requiring high-speed switching and low power loss in a small outline package. The diode's matte tin terminal finish and dual position make it ideal for surface mount PCB designs.
1N4148WS-7-F
Diodes Incorporated
1N4148WS-7-F by Diodes Inc. is a single rectifier diode with max reverse recovery time of 0.004 us and max reverse current of 1 uA. It operates b/w -65 to 150 °C, ideal for applications requiring small outline surface mount diodes with a max output current of 0.15 A.
LM555CN
Rca Solid State
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
LL4148
Promax-johnton
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
International Components
RECTIFIER DIODE; Surface Mount: NO; No. of Elements: 1; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Reverse Recovery Time: .004 us;
M85049/85-08W02
Glenair
CONNECTOR ACCESSORY; MIL Conformity: YES; Material: ALUMINIUM ALLOY; Associated Backshell Military - Specifications: MIL-DTL-38999; Shell Sizes: 08; DIN Conformity: NO;
AB26TRB-32.768KHZ--T
Abracon
AB26TRB-32.768KHZ--T by Abracon is a crystal oscillator with 20 ppm frequency tolerance, 126% stability, and 35000 ohm series resistance. Ideal for applications requiring 0.032768 MHz nominal frequency in surface mount configurations.
NXP Semiconductors
2N2222A
Diotec Semiconductor Ag
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Maximum Time At Peak Reflow Temperature (s): 10;
TDK
RECTIFIER DIODE; Surface Mount: YES; Terminal Finish: Tin/Lead (Sn/Pb); No. of Phases: 1; No. of Elements: 1; Maximum Output Current: .2 A;
1N4148WS
Rectron
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Dc Components
BSS138
Panjit International
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 3 ohm; Minimum DS Breakdown Voltage: 50 V; Terminal Form: GULL WING;
1N4148WT
Good-ark Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
FDT434P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Maximum Drain Current (ID): 6 A; No. of Terminals: 4;
IRF640
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: MATTE TIN;
NDS355AN-NB9L007A
NDS355AN-NB9L007A by Fairchild Semiconductor is an N-CHANNEL power FET with a max drain current of 1.7A and a max power dissipation of 0.5W. It is suitable for applications requiring enhancement mode operation, such as power management systems or motor control circuits.
IRF9Z34NSTRLPBF
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: SINGLE; Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier; Additional Features: AVALANCHE RATED, HIGH RELIABILITY;
FDS6680A
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Form: GULL WING; Transistor Application: SWITCHING;
IRF540NPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 130 W; Maximum Time At Peak Reflow Temperature (s): 30; Transistor Application: SWITCHING;
IRFP460LCPBF
Vishay Intertechnology
Vishay Intertechnology's IRFP460LCPBF is a N-CHANNEL Power FET with 500V DS Breakdown Voltage. Ideal for SWITCHING applications, it has 80A IDM and 960mJ EAS ratings. Operating in ENHANCEMENT MODE, it features 0.27 ohm Drain-Source On Resistance and can handle up to 280W power dissipation.
IRF540NSTRRPBF
Infineon Technologies
IRF540NSTRRPBF by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage and 33A Drain Current. It's used for SWITCHING applications, operates in ENHANCEMENT MODE, and has a max power dissipation of 130W. Ideal for high-power electronic circuits requiring efficient switching capabilities.
IRFL9014PBF
Vishay Intertechnology's IRFL9014PBF is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 14A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating from -55 to 150 °C, it has 0.5 ohm Drain-Source On Resistance and 3.1W Max Power Dissipation.
IRLML0060TRPBF
Infineon's IRLML0060TRPBF is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a single configuration with built-in diode, 11A Max Pulsed Drain Current, and 0.092 ohm Max Drain-Source On Resistance. Operating in -55 to 150 °C range, it comes in small outline package suitable for surface mount technology.
IRFZ44NS
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 94 W; No. of Elements: 1; Package Shape: RECTANGULAR;
SQJ469EP-T1_GE3
Vishay Intertechnology's SQJ469EP-T1_GE3 is a P-CHANNEL FET with 80V DS Breakdown Voltage, 128A IDM, and 0.025 ohm RDS(ON). Ideal for power applications requiring high drain current capability in compact designs. Operating in enhancement mode, it offers efficient performance up to 175°C.
PSMN4R8-100BSEJ
PSMN4R8-100BSEJ by NXP is a single N-channel power FET with 120A max drain current and 405W max power dissipation. Ideal for applications requiring high-power handling in enhancement mode operation, such as automotive systems or industrial equipment.
G3R450MT17D
Genesic Semiconductor
Power Field-Effect Transistors;
2N7000
Unisonic Technologies
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
SIR422DP-T1-GE3
Vishay Intertechnology's SIR422DP-T1-GE3 is an N-channel power FET with a built-in diode, ideal for switching applications. It features a min DS breakdown voltage of 40V, max pulsed drain current of 70A, and max operating temperature of 150°C. This MOSFET has a package style of small outline and offers low drain-source on resistance at 0.0066 ohm.
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Qualification: Not Qualified; Maximum Power Dissipation Ambient: 125 W;
IRLL014NTRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Moisture Sensitivity Level (MSL): 1; Package Body Material: PLASTIC/EPOXY;
Motorola
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Terminal Position: SINGLE; No. of Terminals: 3;
FDMC86139P
FDMC86139P by Onsemi is a P-CHANNEL Power FET with 100V DS Breakdown Voltage and 30A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.067 ohm RDS(on), and operates in ENHANCEMENT MODE.
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APT4018BNR-BUTT
Advanced Power Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-PSFM-T3; Avalanche Energy Rating (EAS): 1300 mJ; No. of Elements: 1;
APT4016BNR-BUTT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 31 A; Terminal Position: SINGLE; JEDEC-95 Code: TO-247;
APT4030BNR-BUTT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Package Shape: RECTANGULAR; JESD-30 Code: R-PSFM-T3;
APT4080BN-BUTT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Maximum Pulsed Drain Current (IDM): 40 A; Terminal Form: THROUGH-HOLE;
APT4040BN-BUTT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Package Shape: RECTANGULAR; JESD-30 Code: R-PSFM-T3;
APT4025BN-BUTT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Feedback Capacitance (Crss): 310 pF; Maximum Turn Off Time (toff): 170 ns; JESD-30 Code: R-PSFM-T3;
APT4020BN-BUTT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Maximum Operating Temperature: 150 Cel; Maximum Turn On Time (ton): 85 ns;
APT4018BN-BUTT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Maximum Pulsed Drain Current (IDM): 116 A; Package Style (Meter): FLANGE MOUNT;
APT4012BVR
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 370 W; Minimum DS Breakdown Voltage: 400 V; Terminal Finish: TIN LEAD;
APT4020BVR
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain-Source On Resistance: .2 ohm;
APT40M70LVR
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 520 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Qualification: Not Qualified;
APT40M70B2VFR
Microsemi
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 520 W; Package Body Material: PLASTIC/EPOXY; Maximum Pulsed Drain Current (IDM): 228 A;
APT40N60B2CF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 417 W; Qualification: Not Qualified; Maximum Operating Temperature: 150 Cel;
APT40N60LCFG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 417 W; Maximum Drain-Source On Resistance: .11 ohm; Transistor Application: SWITCHING;
APT40N60LCF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 417 W; Peak Reflow Temperature (C): NOT SPECIFIED; Package Style (Meter): FLANGE MOUNT;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 417 W; Terminal Form: THROUGH-HOLE; Transistor Element Material: SILICON;
APT4012BVFR
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 37 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; JESD-30 Code: R-PSFM-T3;
APT4020BVFR
Microchip Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Operating Mode: ENHANCEMENT MODE; Package Shape: RECTANGULAR;
APT4016BVFR
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain-Source On Resistance: .16 ohm; Terminal Position: SINGLE; Transistor Element Material: SILICON;
APT40N60B2CFG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 417 W; Avalanche Energy Rating (EAS): 690 mJ; Maximum Drain-Source On Resistance: .11 ohm;
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