Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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STW8NB100 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 1000V breakdown voltage, 29.2A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
Median Price
$6.920
Lifecycle Status
Suppliers In-Stock
11
In-Stock Inventory
1k+
DF Sales Co.
1+ parts
100+ parts
-
1k+ parts
10k+ parts
Vyrian
Digiode
Anansix
ComSIT Distribution GmbH
Fibra_Brandt Electronic GMBH
Connector Distribution Corp
Right Parts Inc.
Inventory MP
Bristol Electronics
IDEA Electronic Components Group
$0.441
$0.397
MKK Technologies
$0.829
DigiPath Technology Company
AZTECH Wire
$9.790
A-Z Elektronik GmbH
Alle Elektronik GmbH
Kepictronics
Corphita
Parana Technologies
$0.527
Perfect Parts
Cyclops Electronics Ltd (Excess)
The use of plastic/epoxy ensures durability and resilience against environmental factors, making this FET suitable for various applications.
N-channel configuration allows for better efficiency and faster switching speeds, making it ideal for high-performance applications.
The built-in diode simplifies circuit design by eliminating the need for external diodes, thus saving space and reducing component count.
Designed specifically for switching applications, this FET is optimized for efficiency, reliability, and performance in various electronic circuits.
A high breakdown voltage enhances protection against voltage spikes, ensuring the device operates reliably in high-voltage applications.
The rectangular package shape allows for efficient layout in PCB design, optimizing space and simplifying integration into devices.
Through-hole terminal form provides robust mechanical support and better thermal performance, making it suitable for high-power applications.
Enhancement mode allows the FET to operate efficiently at low gate voltages, improving overall circuit performance and reducing power consumption.
High pulsed drain current capability permits brief overloading, making this FET versatile for dynamic applications in power electronics.
A high avalanche energy rating ensures the transistor can withstand high-energy transients, increasing reliability in harsh operating environments.
The ability to handle up to 8 A continuously enables this FET to be used in a variety of medium power applications.
Three terminals make this device easy to use in simple circuit designs while ensuring proper connectivity in a variety of configurations.
High power dissipation capability allows this FET to manage significant power loads without overheating, ensuring reliable operation.
Flange mount style enhances thermal dissipation and provides enhanced mechanical stability, making it suitable for high-power setups.
MOSFET technology offers high input impedance and fast switching speeds, making this FET suitable for modern electronic circuits.
A high maximum operating temperature rating allows the FET to function reliably in demanding environments, enhancing its range of applications.
Silicon as the element material provides excellent electrical properties and robustness, ensuring reliable performance in a wide range of applications.
Matte tin finish ensures good solderability and prevents oxidation, enhancing long-term reliability of connections.
With a continuous drain current of up to 7.3 A, this FET is perfect for applications requiring moderate power handling while ensuring efficiency.
Low on-resistance minimizes power losses during operation, improving efficiencies in power conversion applications.
A single terminal position simplifies integration into circuits, allowing for easy implementation without complex routing.
Power Field Effect Transistors (FET) STW8NB100 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics
Avalanche Energy Rating (EAS):
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Maximum Pulsed Drain Current (IDM):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
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Transistor Application:
Transistor Element Material:
STW8NB100 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
NSN
5961-01-573-7496, 5961015737496
NIIN
015737496
STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.
President, CEO
Jean-Marc Chery
President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience
Lorenzo Grandi
President, Sales & Marketing
Jerome Roux
Castelletto
Fabrication
Fab Initiation
1968
Italy
Wafer Capacity
SGFAB AMK 6
2000
Singapore
29,000
AG200
Agrate Brianza
14,000
RST 8
France
Rousset
35,000
Crolles 1
1993
Crolles
30,000
Crolles 2-ext. mod 5
Crolles 2-ext. mod 2
2022
Crolles 2-ext. mod 3
2023
Crolles 2
2004
28,000
1985
SiC Fab
2006
Sweden
Norrköping
10,000
Fab 3
2005
Tours
2,000
Fab 1 & Fab 2
1978
55,000
Fab 2
1997
Catania
SGFAB-AMK 6E
2003
145,000
SGFAB-AMJ 9
1984
152,000
AG300 (R3)
1980
25,000
1987
34,000
AG300
2024
Crolles 2-ext. mod 1
2020
Fab 1 6-inch fab
2013
11,000
SiC 6-inch line
2021
2,500
200mm GaN
2018
SGFAB-AMK 8
2001
Crolles 2- JV Fab
SGFAB-AMK 6
2016
38,125
SGFAB-AMK 2E
2010
20,000
Silicon Carbide A.B.
SiC wafer/EPI Fab
SiC Device Fab
2025
ULN2803ADWR
Texas Instruments
ULN2803ADWR by Texas Instruments is a peripheral driver with 8 functions, open-collector output characteristics, and built-in transient protections. It operates b/w -40 to 85°C, has a max supply voltage of 3V, and is ideal for buffer or inverter-based applications requiring sink current flow direction.
BAV99
Temic Semiconductors
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
MBR0540T1G
Onsemi
MBR0540T1G by Onsemi is a Schottky rectifier diode with max. forward voltage of 0.62V and max. output current of 0.5A, ideal for applications requiring high efficiency power conversion in small outline packages. Operating temp range: -55 to 150°C, with peak reflow temp at 260°C, making it suitable for various electronic devices needing reliable rectification performance in compact designs.
2N7002
Nte Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Maximum Drain Current (ID): .115 A; No. of Terminals: 3;
FDN306P
FDN306P by Onsemi is a P-CHANNEL FET with 12V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has a max ID of 2.6A and 0.04 ohm RDS(on), suitable for small outline packages at temperatures ranging from -55 to 150°C.
BSS138
Vishay Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR; Transistor Application: SWITCHING;
M24308/2-1F
Amphenol
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Body or Shell Style: RECEPTACLE; Body Length: 1.228 inch; No. of Rows Loaded: 2;
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; No. of Elements: 1; Transistor Application: SWITCHING;
06035C103KAT2A
KYOCERA AVX
06035C103KAT2A by KYOCERA AVX is a SMT ceramic capacitor with 0.01uF capacitance and 50V URdc. It has X7R temperature characteristics, -55 to 125 °C operating range, and 10% tolerance. Ideal for applications requiring compact surface mount capacitors with stable performance in a wide temperature range.
SBAV99LT1G
SBAV99LT1G by Onsemi is a rectifier diode with a max repetitive peak reverse voltage of 100V. It has a small outline package style and a fast max reverse recovery time of 0.006 us. It is commonly used in applications requiring low power dissipation and high operating temperatures.
Lite-on Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Additional Features: LOW THRESHOLD; Minimum DS Breakdown Voltage: 60 V;
1N4148
Taiwan Semiconductor
RECTIFIER DIODE; Surface Mount: NO; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 175 Cel; JESD-609 Code: e3; No. of Elements: 1;
Silicon Standard
MICRODIODE ELECTRONICS SHENZHEN CO LTD
Sun Wai Electronic
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Reverse Recovery Time: .004 us; Maximum Repetitive Peak Reverse Voltage: 100 V;
Diodes Incorporated
AMS1117-3.3
Advanced Monolithic Systems
AMS1117-3.3 by Advanced Monolithic Systems is a fixed positive single output LDO regulator with 1A max output current, 3% voltage tolerance, and 1.3V dropout voltage. Ideal for applications requiring stable 3.3V supply in compact designs due to its small outline package and excellent load regulation of 0.025%.
E8WSDC12-32.768KTR
Ecliptek
PARALLEL - FUNDAMENTAL; Mounting Feature: SURFACE MOUNT; Frequency Tolerance: 20 ppm; Aging: 3 PPM/YEAR; Load Capacitance: 12.5 pF; Nominal Operating Frequency: .032768 MHz;
LM317D2TG
LM317D2TG by Onsemi is an adjustable positive single output standard regulator with a max output current of 1.5A and a max output voltage of 37V. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring precise voltage regulation in compact spaces.
DP83848IVVX/NOPB
Texas Instruments DP83848IVVX/NOPB is a 3.3V Ethernet transceiver with 100000 Mbps data rate, suitable for industrial applications. It features CMOS technology, operates b/w -40 to 85 °C, and comes in a low profile flatpack package with matte tin finish.
FDB3632_F085
Fairchild Semiconductor
Fairchild Semiconductor's FDB3632_F085 is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 12A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 0.009 ohm On Resistance, and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, this transistor has a max power dissipation of 310W and can withstand temperatures up to 175°C.
2N7002BKV
Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; Terminal Finish: TIN; Reference Standard: AEC-Q101; Qualification: Not Qualified;
BSC028N06NSTATMA1
Infineon Technologies
BSC028N06NSTATMA1 by Infineon is a N-CHANNEL FET with 60V DS breakdown voltage, 0.0028 ohm max RDS(on), and 400A IDM. It's used for switching applications due to its built-in diode, small outline package style, and high pulsed drain current capacity.
STS4DNF60L
STMicroelectronics
STS4DNF60L by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, 16A IDM, and 0.065 ohm RDS(on). Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation in a SMALL OUTLINE package. Operating at up to 150°C, it offers high power dissipation and avalanche energy rating.
Weitron Technology
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Terminal Finish: TIN LEAD; Maximum Operating Temperature: 150 Cel;
SIS862DN-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's SIS862DN-T1-GE3 is a N-channel Power FET with 60V DS breakdown voltage, 40A max drain current, and 0.0085 ohm max on resistance. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package suitable for surface mount technology.
FDMS86101
FDMS86101 by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 200A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.008 ohm RDS(on), and 135mJ EAS rating. Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 104W in a small outline package.
IRF640
Intersil
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; No. of Terminals: 3; Case Connection: DRAIN;
FQB47P06TM-AM002
FQB47P06TM-AM002 by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, 188A IDM, and 0.026 ohm RDS. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Features include 820mJ EAS, 160W Pdiss, and -55 to +175°C Temp Range.
IPZ40N04S5L7R4ATMA1
Infineon's IPZ40N04S5L7R4ATMA1 is a N-CHANNEL Power FET with 40V DS Breakdown Voltage, 160A IDM, and 0.0107 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
BSC060N10NS3GATMA1/SAMPLE
BSC060N10NS3GATMA1/SAMPLE by Infineon is a N-CHANNEL FET with PLASTIC/EPOXY package, ideal for SWITCHING applications. It features SINGLE configuration with built-in DIODE and METAL-OXIDE SEMICONDUCTOR technology. This 8-terminal transistor has RECTANGULAR shape, DUAL position terminals, and DRAIN case connection for surface mount use.
NTR4501NT1G
NTR4501NT1G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 20V DS Breakdown Voltage, 10A Max Pulsed Drain Current, and 0.08 ohm Max Drain-Source Resistance. Ideal for high-power switching circuits in various electronic devices.
IRFL9014TRPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; Package Shape: RECTANGULAR; Operating Mode: ENHANCEMENT MODE;
North American Philips Discrete Products Div
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): .115 A;
CSD16301Q2
CSD16301Q2 by Texas Instruments is a N-CHANNEL Power FET with 25V DS Breakdown Voltage and 20A IDM. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 2.3W. This SMALL OUTLINE transistor has a -55 to 150 °C operating temperature range and 0.034 ohm Drain-Source On Resistance.
2N7000
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;
IRFB4115PBF
IRFB4115PBF by Infineon is a N-CHANNEL Power FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 420A and EAS of 830mJ, making it suitable for high-power operations. With an operating temperature up to 175°C and 0.011 ohm RDS(on), this transistor offers reliable performance in various industrial settings.
IPA80R650CEXKSA2
Infineon's IPA80R650CEXKSA2 is a N-CHANNEL FET with 800V DS breakdown voltage, ideal for SWITCHING applications. Features include 24A IDM, 340mJ EAS, and 0.65 ohm RDS(on). Package style is FLANGE MOUNT with THROUGH-HOLE terminals.
AO3400A
Alpha & Omega Semiconductor
AO3400A by Alpha & Omega Semiconductor is a N-CHANNEL FET with 30V DS Breakdown Voltage and 5.7A ID. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE and operates in ENHANCEMENT MODE. With a max power dissipation of 1.4W, it can handle up to 30A IDM in a SMALL OUTLINE package style.
STH2N120K5-2AG
Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; Peak Reflow Temperature (C): 245; Terminal Finish: MATTE TIN;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
STW8N120K5
Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
STW8N90K5
STW88N65M5-4
Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
STW88N65M5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 450 W; Package Shape: RECTANGULAR; Package Style (Meter): FLANGE MOUNT;
STW8NB90
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 190 W; Minimum DS Breakdown Voltage: 900 V; Transistor Element Material: SILICON;
STW8NB80
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; JESD-609 Code: e3; Operating Mode: ENHANCEMENT MODE;
STW8NC70Z
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; Maximum Drain Current (Abs) (ID): 7 A; Avalanche Energy Rating (EAS): 250 mJ;
STW80N06-10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Terminal Form: THROUGH-HOLE; Maximum Drain Current (ID): 80 A;
STW80NF10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1;
STW8NC80Z
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
STW80NF12
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Case Connection: DRAIN; Qualification: Not Qualified;
STW8N80
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Maximum Drain Current (ID): 8.2 A; JESD-30 Code: R-PSFM-T3;
STW80NF55-08
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; No. of Terminals: 3; Terminal Position: SINGLE;
STW80NF06
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 3;
STW8NA60
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Package Shape: RECTANGULAR; Operating Mode: ENHANCEMENT MODE;
STW80N05
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
STW80NE06-10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; JEDEC-95 Code: TO-247; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
STW80NF55-06
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Terminal Position: SINGLE; JEDEC-95 Code: TO-247AC;
STW8NA80
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 175 W; Avalanche Energy Rating (EAS): 260 mJ; Package Body Material: PLASTIC/EPOXY;
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