Loading...

STI400N4F6

STMicroelectronics

STI400N4F6 by STMicroelectronics

STI400N4F6 by STMicroelectronics is a N-CHANNEL Power FET with 120A max drain current and 300W power dissipation. Ideal for high-power applications, it operates up to 175 °C.

Median Price

$1.602

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 50 parts In-Stock

1+ parts

$1.780

100+ parts

$1.150

1k+ parts

-

10k+ parts

-

50

$1.780

$1.150

-

-

Verical

USA . 50 parts In-Stock

1+ parts

-

100+ parts

$1.425

1k+ parts

$1.425

10k+ parts

$1.425

50

-

$1.425

$1.425

$1.425

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,866 parts In-Stock

1+ parts

$1.691

100+ parts

-

1k+ parts

-

10k+ parts

-

4,866

$1.691

-

-

-

Vyrian

USA . 7,470 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,470

-

-

-

-

Anansix

USA . 1,437 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,437

-

-

-

-

ACDS - Activité Composants Distribution Service

France . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Bristol Electronics

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Dan-Mar Components

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,299 parts In-Stock

1+ parts

$1.162

100+ parts

-

1k+ parts

$1.046

10k+ parts

-

2,299

$1.162

-

$1.046

-

Component Stockers USA

USA . 138 parts In-Stock

1+ parts

$1.400

100+ parts

-

1k+ parts

-

10k+ parts

-

138

$1.400

-

-

-

Corphita

USA . 3,974 parts In-Stock

1+ parts

$1.602

100+ parts

-

1k+ parts

-

10k+ parts

-

3,974

$1.602

-

-

-

MKK Technologies

India . 1,942 parts In-Stock

1+ parts

$2.185

100+ parts

-

1k+ parts

-

10k+ parts

-

1,942

$2.185

-

-

-

DigiPath Technology Company

USA . 1,942 parts In-Stock

1+ parts

$2.185

100+ parts

-

1k+ parts

-

10k+ parts

-

1,942

$2.185

-

-

-

Microchip USA

USA . 4,392 parts In-Stock

1+ parts

$14.112

100+ parts

-

1k+ parts

-

10k+ parts

-

4,392

$14.112

-

-

-

AZTECH Wire

Italy . 381 parts In-Stock

1+ parts

$15.990

100+ parts

-

1k+ parts

-

10k+ parts

-

381

$15.990

-

-

-

Authorized Procurement Solutions

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,000

-

-

-

-

Parana Technologies

USA . 1,225 parts In-Stock

1+ parts

-

100+ parts

$1.389

1k+ parts

-

10k+ parts

-

1,225

-

$1.389

-

-

Alle Elektronik GmbH

Germany . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Overview

Discover the power of innovation with the STI400N4F6 by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics ensures top-notch quality and reliability in their products. The STI400N4F6 is a game-changer in the Power Field Effect Transistors category, offering customers the perfect balance of performance and efficiency. With a maximum drain current of 120 A and a maximum power dissipation of 300 W, this N-CHANNEL FET is ideal for a wide range of applications. Experience the value and benefits that the STI400N4F6 brings to your projects today.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL FETs generally have lower on-resistance and higher efficiency compared to P-CHANNEL FETs, making them a good choice for high power applications.

Configuration: SINGLE

SINGLE configuration simplifies design and offers easier control in many applications, making this FET a versatile choice for various circuit designs.

Maximum Drain Current (Abs): 120 A

High maximum drain current allows this FET to handle large amounts of current, making it suitable for high power applications such as motor control or power supply circuits.

Maximum Power Dissipation (Abs): 300 W

High maximum power dissipation ensures that this FET can effectively dissipate heat generated during operation, improving overall reliability and performance.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-Oxide Semiconductor technology offers improved switching speed and efficiency, making this FET a good choice for applications requiring fast response times and high performance.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows this FET to operate reliably in harsh conditions without risk of overheating, making it suitable for industrial or automotive applications.

Technical Specifications

Power Field Effect Transistors (FET) STI400N4F6 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

120 A

Maximum Drain Current (ID):

120 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Maximum Operating Temperature:

175 Cel

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Powers

Surface Mount:

NO

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

STI400N4F6 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 6