Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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IPI80N06S407AKSA2
Infineon Technologies
IPI80N06S407AKSA2 by Infineon is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 320A IDM. It is used in applications requiring high drain current handling, such as power supplies and motor control systems. The transistor features a 0.0071 ohm Drain-Source On Resistance and an EAS of 71mJ for robust performance in enhancement mode operation.
71 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
60 V
80 A
.0071 ohm
METAL-OXIDE SEMICONDUCTOR
TO-262AA
R-PSIP-T3
e3
1
3
ENHANCEMENT MODE
PLASTIC/EPOXY
RECTANGULAR
IN-LINE
N-CHANNEL
320 A
NO
TIN
THROUGH-HOLE
SINGLE
SILICON
IPP60R099C7XKSA1
IPP60R099C7XKSA1 by Infineon is a N-CHANNEL FET with 600V DS breakdown voltage. Ideal for switching applications, it has a max pulsed drain current of 83A and 0.099 ohm drain-source resistance. The transistor operates in enhancement mode and features a built-in diode, making it suitable for high-power systems.
97 mJ
600 V
22 A
.099 ohm
TO-220AB
R-PSFM-T3
FLANGE MOUNT
83 A
SWITCHING
IPP60R180C7XKSA1
Infineon's IPP60R180C7XKSA1 is a N-CHANNEL Power FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring a max IDM of 45A and 0.18 ohm RDS(ON), it operates in ENHANCEMENT MODE with an EAS of 53mJ. This FLANGE MOUNT transistor has a SILICON element and TIN finish, making it suitable for high-power circuit designs.
53 mJ
13 A
.18 ohm
45 A
IPP80N06S405AKSA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-PSFM-T3; Case Connection: DRAIN; No. of Terminals: 3;
152 mJ
.0057 ohm
IPP80N06S407AKSA2
IPP80N06S407AKSA2 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage. It has a max ID of 80A and 0.0071 ohm Drain-Source On Resistance. Ideal for applications requiring high current handling capabilities, such as power supplies and motor control systems.
IPS60R2K1CEAKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-251; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: TIN;
11 mJ
2.1 ohm
TO-251
6 A
IPS65R1K5CEAKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Terminal Position: SINGLE; Transistor Element Material: SILICON;
26 mJ
650 V
1.5 ohm
NOT SPECIFIED
8.3 A
IPS65R600E6AKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Minimum DS Breakdown Voltage: 650 V; Maximum Drain-Source On Resistance: .6 ohm; JESD-30 Code: R-PSIP-T3;
142 mJ
.6 ohm
18 A
IPS65R650CEAKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): IN-LINE; Transistor Application: SWITCHING;
.65 ohm
IPS70R2K0CEAKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Minimum DS Breakdown Voltage: 700 V; JESD-30 Code: R-PSIP-T3;
700 V
2 ohm
6.3 A
IPS80R1K4P7AKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Terminal Form: THROUGH-HOLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
8 mJ
800 V
1.4 ohm
8.9 A
IPU50R3K0CEAKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Maximum Drain-Source On Resistance: 3 ohm; No. of Terminals: 3;
18 mJ
500 V
3 ohm
TO-251AA
4.1 A
IPU60R1K4C6AKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-PSIP-T3; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;
8 A
IPU60R600C6AKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Finish: TIN; Package Shape: RECTANGULAR; JESD-30 Code: R-PSIP-T3;
133 mJ
19 A
IPU60R950C6AKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Finish: TIN; No. of Elements: 1; Transistor Element Material: SILICON;
46 mJ
.95 ohm
12 A
IPW60R017C7XKSA1
Infineon's IPW60R017C7XKSA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for SWITCHING applications. Features include 495A IDM, 0.017 ohm RDS(on), and 582mJ EAS rating. Package: PLASTIC/EPOXY, RECTANGULAR shape with THROUGH-HOLE terminals.
582 mJ
109 A
.017 ohm
TO-247
495 A
IPW60R099C7XKSA1
Infineon's IPW60R099C7XKSA1 is a N-CHANNEL Power FET with 600V DS Breakdown Voltage and 0.099 ohm RDS(ON). Ideal for SWITCHING applications, it features 83A IDM, 97mJ EAS, and ENHANCEMENT MODE operation. The PLASTIC/EPOXY package has RECTANGULAR shape, THROUGH-HOLE terminals, and DRAIN connection.
IPW60R120C7XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Package Style (Meter): FLANGE MOUNT; Case Connection: DRAIN;
78 mJ
.12 ohm
66 A
IPW60R180C7XKSA1
IPW60R180C7XKSA1 by Infineon is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Features include 45A max pulsed drain current, 0.18 ohm max RDS(on), and 53mJ avalanche energy rating. Package style is flange mount with through-hole terminals.
IPZ60R060C7XKSA1
Infineon's IPZ60R060C7XKSA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Featuring a max IDM of 135A and 0.06 ohm RDS(on), it operates in enhancement mode. The transistor's package style is flange mount with through-hole terminals, suitable for high-power requirements.
159 mJ
35 A
.06 ohm
R-PSFM-T4
4
135 A
IPZ60R099C7XKSA1
Infineon's IPZ60R099C7XKSA1 is a N-CHANNEL FET with 600V DS Breakdown Voltage. Ideal for SWITCHING applications, it has 83A IDM and 0.099 ohm RDS(on). The transistor features a built-in diode, operates in ENHANCEMENT MODE, and comes in a RECTANGULAR package.
ISOLATED
BTS113ANKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR; Surface Mount: NO; No. of Elements: 1; Package Body Material: PLASTIC/EPOXY; Maximum Drain Current (ID): 11.5 A;
LOGIC LEVEL COMPATIBLE
SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
11.5 A
.17 ohm
150 Cel
46 A
BTS121ANKSA1
BTS121ANKSA1 by Infineon is a N-CHANNEL FET with 100V DS breakdown voltage and 88A IDM. It features a built-in diode, temp sensor, and 0.1 ohm RDS(on), ideal for switching applications. Operating in enhancement mode at up to 150°C, it has a rectangular package with through-hole terminals.
100 V
.1 ohm
88 A
IPA80R1K4CEXKSA2
Infineon's IPA80R1K4CEXKSA2 is a N-CHANNEL FET with 800V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 12A IDM, 170mJ EAS, and 1.4Ω RDS(on). Package style: FLANGE MOUNT, Terminal finish: TIN, Technology: MOSFET.
170 mJ
3.9 A
IPA80R310CEXKSA2
Infineon's IPA80R310CEXKSA2 is a N-CHANNEL FET with 800V DS breakdown voltage, ideal for switching applications. Featuring a built-in diode, it has a max pulsed drain current of 51A and 0.31 ohm RDS(on). With a package style of flange mount, this MOSFET is designed for high-power enhancement mode operation.
670 mJ
16.7 A
.31 ohm
51 A
IPA80R460CEXKSA2
Infineon's IPA80R460CEXKSA2 is a N-CHANNEL FET with 800V DS breakdown voltage, ideal for switching applications. Featuring 33A IDM and 0.46 ohm RDS(on), it operates in enhancement mode with 470mJ EAS. The transistor has a single configuration with built-in diode, suitable for high-power requirements in various industries.
470 mJ
10.8 A
.46 ohm
33 A
IPA80R650CEXKSA2
Infineon's IPA80R650CEXKSA2 is a N-CHANNEL FET with 800V DS breakdown voltage, ideal for SWITCHING applications. Features include 24A IDM, 340mJ EAS, and 0.65 ohm RDS(on). Package style is FLANGE MOUNT with THROUGH-HOLE terminals.
340 mJ
24 A
IPI051N15N5AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Case Connection: DRAIN; Operating Mode: ENHANCEMENT MODE;
230 mJ
150 V
120 A
.0051 ohm
480 A
IPP023N08N5AKSA1
IPP023N08N5AKSA1 by Infineon is a N-CHANNEL FET with 80V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 480A IDM, 0.0023 ohm RDS(on), and 674mJ EAS rating. Package style is FLANGE MOUNT with TIN finish, suitable for ENHANCEMENT MODE operation.
674 mJ
80 V
.0023 ohm
IPP023N10N5AKSA1
IPP023N10N5AKSA1 by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage, 0.0023 ohm RDS(on), and 120A ID. Ideal for SWITCHING applications due to its 480A IDM and 979mJ EAS ratings. Package style is FLANGE MOUNT with PLASTIC/EPOXY body material.
979 mJ
IPP027N08N5AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR;
374 mJ
.0027 ohm
IPP030N10N5AKSA1
IPP030N10N5AKSA1 by Infineon Technologies is a N-CHANNEL FET with 100V DS Breakdown Voltage. It has a max IDM of 480A and 0.003 ohm RDS(ON). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation.
461 mJ
.003 ohm
IPP051N15N5AKSA1
IPP051N15N5AKSA1 by Infineon is a N-CHANNEL FET with 150V DS breakdown voltage, 120A max drain current, and 0.0051 ohm max on resistance. Ideal for switching applications due to its 480A pulsed drain current capability. Package style is flange mount with through-hole terminals.
IPP076N15N5AKSA1
Infineon's IPP076N15N5AKSA1 is a N-CHANNEL FET with 150V DS breakdown voltage, 0.0076 ohm RDS(on), and 448A IDM. Ideal for switching applications, it features a built-in diode and operates in enhancement mode. The transistor has a rectangular package shape, through-hole terminals, and can handle up to 112A drain current.
130 mJ
112 A
.0076 ohm
448 A
IPP083N10N5AKSA1
IPP083N10N5AKSA1 by Infineon Technologies is a N-CHANNEL FET with 100V DS Breakdown Voltage. It has a max IDM of 292A and 0.0083 ohm RDS(ON). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE.
42 mJ
73 A
.0083 ohm
292 A
IPP410N30NAKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Avalanche Energy Rating (EAS): 240 mJ; JEDEC-95 Code: TO-220AB;
240 mJ
300 V
44 A
.041 ohm
176 A
IPW60R041P6FKSA1
IPW60R041P6FKSA1 by Infineon is a N-CHANNEL FET with 600V DS breakdown voltage, 0.041 ohm RDS(on), and 267A IDM. It's used for switching applications due to its single configuration with built-in diode and enhancement mode operation. The transistor features a metal-oxide semiconductor technology and silicon element material in a rectangular package style.
1954 mJ
267 A
IPZ60R070P6FKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Application: SWITCHING; JESD-30 Code: R-PSFM-T4; Minimum DS Breakdown Voltage: 600 V;
1136 mJ
.07 ohm
156 A
IPZ60R099P6FKSA1
Infineon's IPZ60R099P6FKSA1 is a N-CHANNEL FET with 600V DS breakdown voltage, 0.099 ohm RDS(on), and 109A IDM. Ideal for switching applications, this MOSFET features a built-in diode, operates in enhancement mode, and has an EAS of 796mJ.
796 mJ
IPZ60R125P6FKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Application: SWITCHING; Package Style (Meter): FLANGE MOUNT; No. of Elements: 1;
636 mJ
.125 ohm
87 A
SPW17N80C3A
SPW17N80C3A by Infineon is a N-CHANNEL Power FET with 800V DS Breakdown Voltage. It has a max ID of 17A and 0.29 ohm Drain-Source On Resistance, making it ideal for SWITCHING applications. Operating in ENHANCEMENT MODE, this transistor can handle up to 51A IDM and has an EAS rating of 670mJ at a max temp of 150°C.
AVALANCHE RATED, HIGH VOLTAGE
17 A
.29 ohm
IPI80N06S207AKSA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Terminal Form: THROUGH-HOLE; Terminal Position: SINGLE;
530 mJ
55 V
.0066 ohm
175 Cel
IPI120N10S403AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Operating Temperature: 175 Cel; Terminal Finish: TIN;
770 mJ
.0039 ohm
300 pF
-55 Cel
250 W
AEC-Q101
IPP120N10S403AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; JESD-609 Code: e3; JEDEC-95 Code: TO-220AB;
IPP70N12S311AKSA1
IPP70N12S311AKSA1 by Infineon Technologies is a N-CHANNEL Power FET with 120V DS Breakdown Voltage and 280A IDM. Ideal for applications requiring high drain current handling, such as automotive power systems. Operating in enhancement mode, it offers low 0.0116 ohm RDS(ON) for efficient power management.
410 mJ
120 V
70 A
.0116 ohm
280 A
IPI120N08S404AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 179 W; No. of Terminals: 3; Minimum Operating Temperature: -55 Cel;
310 mJ
.0044 ohm
200 pF
179 W
IPA80R750P7XKSA1
Infineon's IPA80R750P7XKSA1 is a N-CHANNEL FET with 800V DS breakdown voltage, ideal for switching applications. It features 17A IDM and 0.75 ohm RDS(on), operating in enhancement mode. The transistor has a rectangular package shape, through-hole terminals, and an isolated case connection.
16 mJ
.75 ohm
IPP039N10N5AKSA1
IPP039N10N5AKSA1 by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage, 0.0039 ohm Drain-Source On Resistance, and 400A Pulsed Drain Current. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE.
196 mJ
100 A
400 A
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