Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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IPW60R180C7XKSA1 by Infineon is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Features include 45A max pulsed drain current, 0.18 ohm max RDS(on), and 53mJ avalanche energy rating. Package style is flange mount with through-hole terminals.
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$1.438
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Perfect Parts
Eastek
Provides durability and protection for the internal components of the transistor, ensuring a longer lifespan.
Allows for efficient switching and control of current flow, making the transistor suitable for a wide range of applications.
Suitable for high voltage applications, providing a reliable and stable performance under demanding conditions.
Capable of handling high current pulses, making it suitable for applications requiring power switching or control.
Provides protection against voltage spikes and surges, ensuring the reliability and safety of the transistor in various operating conditions.
Offers high efficiency and performance, making the transistor suitable for power switching applications where low power loss is essential.
Provides low resistance for efficient current flow and minimal power loss, making the transistor ideal for high-power applications.
Power Field Effect Transistors (FET) IPW60R180C7XKSA1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies
Avalanche Energy Rating (EAS):
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Maximum Drain Current (ID):
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Field Effect Transistor Technology:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
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Operating Mode:
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Polarity or Channel Type:
Maximum Pulsed Drain Current (IDM):
Surface Mount:
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IPW60R180C7XKSA1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Assembly/Origin - Mult Dev A/T Chgs 3/Nov/2022
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
STM32F103C8T6
STMicroelectronics
STM32F103C8T6 by STMicroelectronics is a 32-bit microcontroller with 48 terminals, operating at up to 16 MHz. It features 10-Ch 12-Bit ADC channels and 7 DMA channels, suitable for industrial applications requiring low power consumption and high-speed connectivity via CAN, I2C(2), SPI(2), USART(3), USB.
1N4148
Hy Electronic
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BAV99
Philips Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
2N2222A
Transistor & Electronic
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
M85049/85-08W02
TE Connectivity
CONNECTOR ACCESSORY; Minimum Operating Temperature: -65 Cel; Wire Gauge (AWG): 0; Maximum Wire Size: 0 AWG; Maximum Operating Temperature: 175 Cel; Material: ALUMINUM ALLOY;
BSS138
Vishay Intertechnology
Vishay Intertechnology's BSS138 is a N-CHANNEL FET with SINGLE configuration and ENHANCEMENT MODE operation. It features 0.35W power dissipation, METAL-OXIDE SEMICONDUCTOR tech, and 150°C max temp. Ideal for surface mount applications in various electronic circuits requiring efficient power management.
1N4148WS
Weitron Technology
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Continental Device India
LM555CM
Onsemi
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
LM2931AZ-5.0RPG
LM2931AZ-5.0RPG by Onsemi is a Fixed Positive Single Output LDO Regulator with 5V nominal output voltage and 0.1A max output current. It features a low dropout voltage of 0.6V, making it suitable for applications requiring stable power supply in temperature range from -40 to 125°C. The package style is cylindrical with matte tin terminal finish, ideal for various electronic devices needing precise voltage regulation.
ULN2803A
YOUTAI SEMICONDUCTOR CO LTD
BUFFER OR INVERTER BASED PERIPHERAL DRIVER; Terminal Form: GULL WING; No. of Terminals: 18; Package Code: SOP; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G18;
LL4148
Temic Semiconductors
RECTIFIER DIODE; Terminal Position: END; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Sangdest Microelectronics (Nanjing)
MBR1560CT
General Instrument
MBR1560CT by General Instrument is a common cathode rectifier diode with a max forward voltage of 0.75V and max output current of 15A. It is used for efficiency applications, has a package shape of rectangular, and can operate in temperatures ranging from -65 to 150 °C.
Sinyork
RECTIFIER DIODE; Surface Mount: YES; Config: SINGLE; No. of Phases: 1; No. of Elements: 1; Maximum Repetitive Peak Reverse Voltage: 100 V;
Rochester Electronics
SPC TECHNOLOGY/ MULTICOMP
SS14
Hitano Enterprise
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Kingwell Technonlogy
BSS138LT3G
BSS138LT3G by Onsemi is a N-CHANNEL FET with a min DS breakdown voltage of 50V. It is used for switching applications and has a max drain current of 0.2A and max drain-source on resistance of 3.5 ohm.
AUIRF7316QTR
Infineon Technologies
AUIRF7316QTR by Infineon is a P-CHANNEL FET with 30V DS Breakdown Voltage, 30A IDM, and 0.058 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Features include 2 elements with built-in diode in a SMALL OUTLINE package.
FDS8949_F085
Fairchild Semiconductor
FDS8949_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET for SWITCHING applications. Features include 40V DS Breakdown Voltage, 20A IDM, and 0.029 ohm RDS(on). With a max power dissipation of 2W and operating temperature up to 150°C, it's ideal for high-performance electronic devices requiring efficient power management in compact designs.
AUIRF540Z
AUIRF540Z by Infineon Technologies is a N-CHANNEL FET with 100V DS breakdown voltage, ideal for switching applications. It features 140A max pulsed drain current and 0.0265 ohm max drain-source resistance. Operating in enhancement mode, it has a 175°C max temp rating and 92W power dissipation capability.
AUIRF3205ZSTRL
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 170 W; Maximum Drain Current (ID): 75 A; Operating Mode: ENHANCEMENT MODE;
FDC5614P
FDC5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 20A Max IDM and 0.105 ohm RDS(ON), operating in ENHANCEMENT MODE at -55 to 150 °C. This SMALL OUTLINE transistor has a built-in diode, GULL WING terminals, and METAL-OXIDE SEMICONDUCTOR technology.
NTMFS5C628NLT1G
NTMFS5C628NLT1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 900A IDM, and 0.0033 ohm RDS(on). It operates in Enhancement Mode and has a max power dissipation of 110W. Ideal for high-power applications requiring efficient switching capabilities.
BSP129H6327XTSA1
Infineon's BSP129H6327XTSA1 is a N-CHANNEL FET with 240V DS Breakdown Voltage and 1.4A IDM. Ideal for DEPLETION MODE operation, it features a built-in diode and 20 ohm Drain-Source On Resistance. Widely used in automotive applications due to AEC-Q101 compliance.
IRF7328TRPBF
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain Current (Abs) (ID): 8 A; Maximum Operating Temperature: 150 Cel;
FDD86102LZ
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 54 W; JESD-30 Code: R-PSSO-G2; Maximum Drain Current (ID): 8 A;
IRLML2060TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Transistor Element Material: SILICON; Transistor Application: SWITCHING;
IRF7416TRPBF
IRF7416TRPBF by Infineon Technologies is a P-CHANNEL power FET with a min DS breakdown voltage of 30V. It is used for switching applications and has a max pulsed drain current of 45A.
IRF640STRLPBF
Vishay Intertechnology's IRF640STRLPBF is a N-CHANNEL Power FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 72A IDM, 580mJ EAS, and 0.18 ohm RDS(on). With a max power dissipation of 130W and operating temperature up to 175°C, it suits various high-power electronic designs.
IRFP460
Intersil
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; Transistor Element Material: SILICON; Avalanche Energy Rating (EAS): 960 mJ;
FDD4243-F085P
FDD4243-F085P by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 14A, 0.044 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With a compact SMALL OUTLINE package and AEC-Q101 standard compliance, it ensures reliable performance in automotive electronics.
IRLML2502TRPBF
IRLML2502TRPBF by Infineon Technologies is a N-CHANNEL power FET with a min DS breakdown voltage of 20V. It is used for switching applications and has a max drain current of 4.2A.
BSC067N06LS3GXT
BSC067N06LS3GXT by Infineon is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a max IDM of 200A and 0.0067 ohm RDS(on), operating in enhancement mode up to 150°C. This MOSFET comes in a small outline package with built-in diode, suitable for high-power electronic designs.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; No. of Terminals: 2; Case Connection: DRAIN;
IRF540NSTRRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: GULL WING;
IRFP460LC
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Additional Features: AVALANCHE RATED; Package Style (Meter): FLANGE MOUNT; No. of Elements: 1;
IRFZ44NSTRLPBF
IRFZ44NSTRLPBF by Infineon is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 160A IDM, 150mJ EAS, and 0.0175 ohm RDS(on). With a max power dissipation of 94W and operating temp of 175°C, it's suitable for high-power circuits requiring fast switching capabilities.
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FCH170N60
IPW65R080CFDAFKSA1
Infineon's IPW65R080CFDAFKSA1 is a N-CHANNEL FET with 650V DS Breakdown Voltage, 0.08 ohm RDS(on), and 137A IDM. Ideal for SWITCHING applications, it features a built-in diode, operates in ENHANCEMENT MODE, and has an EAS of 1160 mJ. AEC-Q101 compliant, this transistor is designed for high-power requirements in automotive and industrial sectors.
IPW65R080CFDAXK
Infineon's IPW65R080CFDAXK is a N-CHANNEL FET with 650V DS breakdown voltage, 0.08 ohm RDS(on), and 137A IDM. Ideal for switching applications in automotive systems due to AEC-Q101 standard compliance and 1160mJ EAS rating.
IPW65R080CFDFKSA1
Infineon's IPW65R080CFDFKSA1 is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 137A IDM and 1160mJ EAS, it operates in ENHANCEMENT MODE with 0.08 ohm RDS(ON). With a max power dissipation of 391W and temp range of -55 to 150 °C, it's suitable for high-power systems.
IPW60R037P7XKSA1
Infineon's IPW60R037P7XKSA1 is a N-CHANNEL Power FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 0.037 ohm Drain-Source On Resistance and 280A Pulsed Drain Current, it operates in ENHANCEMENT MODE. The transistor's METAL-OXIDE SEMICONDUCTOR technology and built-in DIODE make it suitable for high-power RECTANGULAR package designs.
IPW60R045CPFKSA1
Infineon's IPW60R045CPFKSA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Features include 230A max pulsed drain current, 1950mJ avalanche energy rating, and 0.045ohm max on-resistance. Suitable for enhancement mode operation at up to 150°C.
IPW65R045C7FKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Transistor Application: SWITCHING; JESD-30 Code: R-PSFM-T3;
IPW65R019C7FKSA1
IPW65R019C7FKSA1 by Infineon Technologies is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. It features a max IDM of 496A and 0.019 ohm RDS(on), making it ideal for SWITCHING applications. The transistor's METAL-OXIDE SEMICONDUCTOR technology and ENHANCEMENT MODE operation ensure efficient performance in various power electronics systems.
IPW65R110CFDAFKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-PSFM-T3; Terminal Form: THROUGH-HOLE; Package Style (Meter): FLANGE MOUNT;
IPW60R099C6
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 278 W; Operating Mode: ENHANCEMENT MODE; Terminal Form: THROUGH-HOLE;
IPW65R041CFDFKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 500 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1;
IPW60R099C6XK
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Terminal Position: SINGLE;
IPW60R099C6FKSA1
Infineon's IPW60R099C6FKSA1 is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 112A IDM and 0.099 ohm RDS(on), it operates in ENHANCEMENT MODE up to 150°C. Package style is FLANGE MOUNT with THROUGH-HOLE terminals, suitable for high-power circuits.
IPW60R024P7XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Operating Temperature: 150 Cel; No. of Terminals: 3; Maximum Drain-Source On Resistance: .024 ohm;
IPW65R041CFD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 500 W; Maximum Operating Temperature: 150 Cel; Terminal Form: THROUGH-HOLE;
IPW60R120P7XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-609 Code: e3; Package Shape: RECTANGULAR; Transistor Application: SWITCHING;
IPW60R040C7XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Shape: RECTANGULAR; Terminal Finish: TIN; Transistor Application: SWITCHING;
IPW60R160C6FKSA1
Infineon's IPW60R160C6FKSA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Featuring a max IDM of 70A and 0.16 ohm RDS(on), it operates in enhancement mode at up to 150°C. The transistor's built-in diode and high EAS of 497mJ make it suitable for various power control systems.
IPW60R041C6FKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Operating Mode: ENHANCEMENT MODE; Avalanche Energy Rating (EAS): 1954 mJ;
IPW65R080CFD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 391 W; Package Shape: RECTANGULAR; Maximum Pulsed Drain Current (IDM): 137 A;
IPW65R041CFDXK
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 500 W; Transistor Element Material: SILICON; Maximum Drain Current (Abs) (ID): 68.5 A;
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