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BSZ100N06LS3GXT

Infineon Technologies

BSZ100N06LS3GXT by Infineon Technologies

Infineon's BSZ100N06LS3GXT is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 80A IDM, 55mJ EAS, and 0.0179 ohm RDS(ON). Operating from -55 to 150 °C, it has a max power dissipation of 50W in a small outline package.

Median Price

$0.315

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

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Avnet

USA . 20,000 parts In-Stock

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Vyrian

USA . 24,765 parts In-Stock

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VNN

France . 24,227 parts In-Stock

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Digiode

USA . 990 parts In-Stock

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990

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Nova Conductors

Japan . 35 parts In-Stock

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Ampacity Inc.

Singapore . 24,577 parts In-Stock

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$0.268

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Semicontronic

India . 19,820 parts In-Stock

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$0.580

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$0.566

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$0.563

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$0.580

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Corohmni

South Africa . 963 parts In-Stock

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$0.988

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Aztec Data Supply Inc.

USA . 43,939 parts In-Stock

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$1.380

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

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$1.664

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$1.581

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$1.581

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Modulus Dynamics

Lithuania . 9,568 parts In-Stock

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$1.737

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$1.668

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$1.598

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Argo Parts USA

USA . 4,425 parts In-Stock

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Continental Prestige Electronics

USA . 2,021 parts In-Stock

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Bastille Electronics

Australia . 550 parts In-Stock

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Corphita

USA . 159 parts In-Stock

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Robosynatics

Brazil . 20 parts In-Stock

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Lucentia Tech

USA . 20 parts In-Stock

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$3.065

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$3.065

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$3.065

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$3.065

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$3.065

Overview

Unleash the power of innovation with the BSZ100N06LS3GXT by Infineon Technologies. As a leader in manufacturing top-quality Power Field Effect Transistors, Infineon Technologies delivers exceptional performance and reliability. Ideal for switching applications, this N-CHANNEL transistor offers a built-in diode and operates in enhancement mode, providing maximum efficiency. With a high DS breakdown voltage of 60V and a pulsing drain current of 80A, this transistor is designed to handle demanding tasks with ease. Experience the benefits of cutting-edge technology with the BSZ100N06LS3GXT and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and helps in protecting the internal components of the transistor, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have higher mobility and conductivity, resulting in better performance compared to P-channel FETs.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode allows for better protection against reverse polarity and is useful in applications where efficient diode functionality is required.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast and efficient switching performance.

Surface Mount: YES

Surface mount design makes it easy to integrate the transistor into circuit boards, saving space and enabling automated assembly processes.

Minimum DS Breakdown Voltage: 60 V

High breakdown voltage allows for safe operation in high voltage circuits, providing reliability and protection against voltage spikes.

Package Shape: SQUARE

Square shape design is standardized and makes it compatible with various mounting configurations.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs are easier to control and provide higher efficiency in switching applications.

Maximum Pulsed Drain Current (IDM): 80 A

High pulsed drain current rating ensures that the transistor can handle temporary peak currents without damage.

Avalanche Energy Rating (EAS): 55 mJ

Avalanche energy rating indicates the ability of the transistor to handle energy spikes, making it suitable for rugged applications.

No. of Terminals: 8

8 terminals provide flexibility in circuit connections and allow for various configurations.

Maximum Power Dissipation (Abs): 50 W

High power dissipation rating ensures that the transistor can handle and dissipate heat effectively, increasing its reliability.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and provides efficient thermal performance for the transistor.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high performance, low power consumption, and reliability in various applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the transistor to operate in demanding environments without performance degradation.

Transistor Element Material: SILICON

Silicon material provides high reliability, durability, and performance in electronic components like transistors.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature ensures that the transistor can function in extreme cold conditions without issues.

Maximum Drain Current (ID): 20 A

High drain current rating ensures that the transistor can handle high currents in various applications.

Maximum Drain-Source On Resistance: 0.0179 ohm

Low drain-source on resistance minimizes power loss and improves efficiency in switching applications.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit connections and multiple mounting options.

Case Connection: DRAIN

Drain connection is suitable for applications where the drain terminal is required to be connected for proper operation.

Technical Specifications

Power Field Effect Transistors (FET) BSZ100N06LS3GXT attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Avalanche Energy Rating (EAS):

55 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

20 A

Maximum Drain-Source On Resistance:

.0179 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-N8

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

80 A

Surface Mount:

YES

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BSZ100N06LS3GXT Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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