Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Infineon Technologies' BSZ130N03LSGATMA1 is a power FET with N-channel polarity and a single configuration. It is used for switching applications, with a min DS breakdown voltage of 30V, max pulsed drain current of 140A, and max power dissipation of 25W.
Median Price
$0.235
Lifecycle Status
Suppliers In-Stock
12
In-Stock Inventory
1k+
DigiKey
1+ parts
$1.000
100+ parts
$0.407
1k+ parts
$0.313
10k+ parts
-
Rochester
$0.249
$0.207
$0.185
Verical
$0.221
Arrow
Chip1Stop
$0.191
Digiode
$0.186
Nova Conductors
$0.368
Vyrian
Chip Stock
IBS Electronics
$0.561
Rutronik
$0.215
VNN
Ampacity Inc.
$0.124
Corphita
$0.176
Semicontronic
$0.270
$0.263
$0.262
Argo Parts USA
$0.356
Netroflash
$0.360
Modulus Dynamics
$0.387
$0.372
Corohmni
Continental Prestige Electronics
$0.704
$0.417
$0.239
$0.213
Component Stockers USA
$0.720
$0.430
$0.310
$0.240
Aztec Data Supply Inc.
$0.760
RC Electronics
$0.380
$0.350
$0.340
Perfect Parts
Eastek
Microchip USA
The plastic/epoxy package body material provides durability and ensures reliable performance in various environments, making this power FET suitable for a wide range of applications.
The N-channel type of the power FET allows for efficient and low-resistance conduction of current, enabling high-performance switching operations for enhanced power efficiency.
The built-in diode in this power FET configuration allows for simplified circuit design and provides protection against reverse current flow, making it ideal for applications requiring efficient and reliable switching.
Designed specifically for switching applications, this power FET ensures fast and efficient switching characteristics, making it suitable for use in power supplies, motor control, and other high-speed switching systems.
With surface mount capability, this power FET offers easy and convenient integration into compact electronic devices, enabling efficient PCB layout and optimizing space utilization.
The minimum DS breakdown voltage of 30V ensures that this power FET can handle high voltage levels safely, making it suitable for a wide range of industrial and automotive applications.
The square package shape provides mechanical stability and ease of mounting, enabling secure installation in various equipment and contributing to the overall reliability of the product.
The no-lead terminal form offers improved thermal performance and eliminates the need for additional lead bending or clipping, simplifying the manufacturing process and enhancing overall product reliability.
Operating in enhancement mode means that this power FET can be easily controlled and switched off, enabling precise control over the power flow and enhancing efficiency in various circuit configurations.
With a single element, this power FET simplifies circuit design and reduces component count, leading to cost savings and increased overall system reliability.
The high maximum pulsed drain current rating of 140A allows this power FET to handle momentary peak currents, making it suitable for demanding applications such as power amplifiers and high-current switching circuits.
The high avalanche energy rating ensures reliable operation during transient conditions, providing protection against voltage spikes and enhancing the robustness of the power FET.
With a maximum drain current rating of 35A, this power FET can handle high current loads, enabling efficient power delivery in applications such as motor control and power management systems.
The 8 terminals of this power FET offer versatile connectivity options, allowing for easy integration and providing flexibility in circuit design and layout.
With a maximum power dissipation rating of 25W, this power FET can handle high power levels without overheating, ensuring reliable and continuous operation in demanding applications.
The small outline package style enables space-efficient integration into compact designs, making this power FET suitable for portable devices, consumer electronics, and other space-constrained applications.
Utilizing metal-oxide semiconductor technology, this power FET offers high switching speeds, low on-resistance, and excellent overall performance characteristics, making it an excellent choice for power switching applications.
With a high maximum operating temperature of 150°C, this power FET can withstand harsh environments and deliver reliable performance in applications where high-temperature operation is required.
The silicon material used in the transistor element ensures high efficiency, low conduction losses, and excellent thermal stability, making this power FET a reliable and efficient choice for various power switching applications.
The minimum operating temperature of -55°C allows this power FET to operate in extremely cold environments, making it suitable for applications in aerospace, automotive, and other temperature-sensitive industries.
The tin terminal finish offers excellent solderability and corrosion resistance, ensuring reliable electrical connections and improving the overall lifespan of the power FET.
The maximum drain current rating of 28A allows this power FET to handle high current loads, enabling efficient power delivery in various applications such as motor control and power supply systems.
With a low maximum drain-source on-resistance of 0.013 ohm, this power FET minimizes power losses and voltage drops, resulting in improved overall system efficiency.
The dual terminal position provides flexibility in circuit layout and allows for convenient PCB design, enabling efficient thermal management and minimizing signal interference.
With a moisture sensitivity level of 1, this power FET is suitable for surface mount assembly processes, ensuring long-term reliability and avoiding potential issues related to moisture absorption.
The drain case connection offers excellent thermal dissipation and helps to maintain low operating temperatures, contributing to the reliability and longevity of the power FET.
Power Field Effect Transistors (FET) BSZ130N03LSGATMA1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies
Additional Features:
Avalanche Energy Rating (EAS):
Case Connection:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Maximum Pulsed Drain Current (IDM):
Qualification:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
BSZ130N03LSGATMA1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Other - Multiple Changes 09/Jul/2014
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
2N7002
Secos
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Drain Current (ID): .115 A; Maximum Drain-Source On Resistance: 7.5 ohm;
BAV99+
Multicomp Pro
BAV99+ by Multicomp Pro is a series connected diode with 0.2A output current and 75V peak reverse voltage. Its 0.006us reverse recovery time makes it ideal for high-speed applications. This small outline rectifier diode is designed for surface mount installation in electronic circuits.
BAV99
First Components International
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LL4148
Rugao Dachang Electronic
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
OPA2277UA
Burr-Brown Corporation
OPERATIONAL AMPLIFIER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
LL4148-GS08
Telefunken Microelectronics
RECTIFIER DIODE; Surface Mount: YES; JESD-609 Code: e0; No. of Elements: 1; Maximum Operating Temperature: 175 Cel; Maximum Non Repetitive Peak Forward Current: 2 A;
ULN2803A
Motorola
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Terminal Position: DUAL; JESD-30 Code: R-PDIP-T18;
1N4148
ROHM
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
1N4148WT
Sangdest Microelectronics (Nanjing)
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WS
Surge Components
Itt Components
RECTIFIER DIODE; Surface Mount: NO; Config: SINGLE; Maximum Operating Temperature: 200 Cel; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Output Current: .15 A;
LM555CM
Texas Instruments
LM555CM by Texas Instruments is an Analog Waveform Generation IC with a supply voltage range of 4.5V to 16V and max operating temperature of 70°C. It comes in a small outline package, suitable for applications requiring pulse generation or rectangular waveform outputs. With surface mount capability and low supply current of 15mA, it is ideal for commercial-grade electronic circuits.
Kec
RECTIFIER DIODE; Surface Mount: NO; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Non Repetitive Peak Forward Current: 2 A; Config: SINGLE; Maximum Operating Temperature: 200 Cel;
LM107H
Intersil
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Nominal Common Mode Reject Ratio: 96 dB;
M24308/2-1F
TE Connectivity
TE Connectivity's M24308/2-1F D-Sub Connector features 9 contacts, 2 rows, and a shell size of 1/E. With a rated current of 7.5A, it operates b/w -55°C to 125°C. Ideal for cable mounting applications, this connector has a steel shell with cadmium finish and uses crimp termination for female contact pins.
SS14
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MBRS130LT3G
Rochester Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: J BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Cheng-yi Electronic
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
M39029/58360
Souriau
CONNECTOR ACCESSORY; Associated Military - Specifications: MIL-DTL-38999; Tool Settings: M22520/2-09; Terminal Type: CRIMP; MIL Conformity: YES; Mating Contacts: M39029/56348;
Good-ark Electronics
CSD88537NDT
CSD88537NDT by Texas Instruments is an N-channel power FET with 60V DS breakdown voltage, ideal for switching applications. It features separate elements with built-in diode, 108A max pulsed drain current, and 0.019ohm max drain-source resistance. This MOSFET operates in enhancement mode, has a small outline package style, and can withstand temperatures from -55 to 150°C.
IRFP460LCPBF
Vishay Intertechnology
Vishay Intertechnology's IRFP460LCPBF is a N-CHANNEL Power FET with 500V DS Breakdown Voltage. Ideal for SWITCHING applications, it has 80A IDM and 960mJ EAS ratings. Operating in ENHANCEMENT MODE, it features 0.27 ohm Drain-Source On Resistance and can handle up to 280W power dissipation.
IRFS3306TRLPBF
Infineon Technologies
IRFS3306TRLPBF by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 620A IDM, 184mJ EAS, and 0.0042 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 230W at 175°C.
STP55NF06
STMicroelectronics
STP55NF06 by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, 200A IDM, and 0.018 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175°C, making it suitable for high-power tasks.
NDS355AN-NB9L007A
Fairchild Semiconductor
NDS355AN-NB9L007A by Fairchild Semiconductor is an N-CHANNEL power FET with a max drain current of 1.7A and a max power dissipation of 0.5W. It is suitable for applications requiring enhancement mode operation, such as power management systems or motor control circuits.
IRLML2502GTRPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Terminal Position: DUAL; Maximum Pulsed Drain Current (IDM): 33 A;
IRF840SPBF
Vishay Intertechnology's IRF840SPBF is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 32A IDM, 510mJ EAS, and 0.85 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 125W and can withstand up to 150°C.
FQB34N20LTM
Onsemi
FQB34N20LTM by Onsemi is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 124A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has an EAS of 640mJ and 0.08 ohm Drain-Source On Resistance.
IPT012N08N5ATMA1
IPT012N08N5ATMA1 by Infineon Technologies is a N-CHANNEL FET with 80V DS Breakdown Voltage, 1200A IDM, and 0.0012 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. RECTANGULAR package style with PLASTIC/EPOXY body material and METAL-OXIDE SEMICONDUCTOR technology.
JANTX2N6796
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; Terminal Position: BOTTOM; Maximum Drain Current (Abs) (ID): 8 A;
DMP4051LK3-13
Diodes Incorporated
DMP4051LK3-13 by Diodes Inc. is a P-CHANNEL FET with 40V DS Breakdown Voltage, 28.9A IDM, and 0.051 ohm RDS(ON). Ideal for SWITCHING applications in small outline packages, operating at up to 150°C with single terminal position and built-in diode.
IRFP260NPBF
IRFP260NPBF by Infineon is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 50A Drain Current. Ideal for SWITCHING applications, it features a 300W Power Dissipation, -55 to 175 °C Operating Temp, and 0.04 ohm On Resistance.
NVTFS5116PLTAG
NVTFS5116PLTAG by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, 126A IDM, and 0.072ohm RDS(on). Ideal for power management applications in small outline packages. Operating at up to 175°C, it features a built-in diode and avalanche energy rating of 45mJ.
IPT020N10N3ATMA1
IPT020N10N3ATMA1 by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage, 1200A IDM, and 0.02 ohm RDS(on). Ideal for power applications requiring high drain current handling and low on-resistance. Suitable for use in power supplies, motor control, and automotive systems due to its high power dissipation capability.
IXTA96P085T
Littelfuse
The Littelfuse IXTA96P085T is a P-CHANNEL FET with 85V DS breakdown voltage and 96A max drain current. Ideal for switching applications, it features a built-in diode, 300A pulsed drain current, and 0.013 ohm max on resistance. Suitable for enhancement mode operation in high-power systems with an operating temperature range of -55 to 150°C.
SI7469DP-T1-GE3
Vishay Intertechnology's SI7469DP-T1-GE3 is a P-channel FET with 80V DS breakdown voltage, 40A IDM, and 0.025 ohm RDS(on). Ideal for power management applications due to its 83W max power dissipation, small outline package style, and -55 to +150°C operating temperature range.
IRLL024NTRPBF
IRLL024NTRPBF by Infineon Technologies is a N-CHANNEL Power FET with 55V DS Breakdown Voltage and 3.1A Max Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 12A Pulsed Drain Current, and 0.065 ohm On Resistance. Suitable for surface mount with GULL WING terminals in a SMALL OUTLINE package style.
ZXMP6A13GTA
ZXMP6A13GTA by Diodes Inc. is a P-CHANNEL power FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max drain current of 2.3A.
IRF7328TRPBF
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain Current (Abs) (ID): 8 A; Maximum Operating Temperature: 150 Cel;
BSP129H6327XTSA1
Infineon's BSP129H6327XTSA1 is a N-CHANNEL FET with 240V DS Breakdown Voltage and 1.4A IDM. Ideal for DEPLETION MODE operation, it features a built-in diode and 20 ohm Drain-Source On Resistance. Widely used in automotive applications due to AEC-Q101 compliance.
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
BSZ100N06LS3GATMA1
BSZ100N06LS3GATMA1 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, 80A IDM, and 0.0179 ohm RDS. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Package: PLASTIC/EPOXY, Surface Mountable, with DUAL terminals and DRAIN case connection.
BSZ15DC02KDHXTMA1
Infineon BSZ15DC02KDHXTMA1 is a Power FET with N/P-Channel, 20V DS Breakdown Voltage, and 0.055 ohm RDS(ON). Commonly used in automotive applications due to AEC-Q101 standard compliance.
BSZ160N10NS3GATMA1
Infineon Technologies' BSZ160N10NS3GATMA1 is a power FET with N-channel configuration and a built-in diode. It is suitable for switching applications, offering a min DS breakdown voltage of 100V and max pulsed drain current of 160A. Its small outline package style and high operating temperature make it ideal for various electronic devices.
BSZ100N06LS3GXT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Case Connection: DRAIN; Minimum Operating Temperature: -55 Cel;
BSZ123N08NS3GATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: NO LEAD; JESD-30 Code: S-PDSO-N8; Package Body Material: PLASTIC/EPOXY;
BSZ160N10NS3GXT
Infineon's BSZ160N10NS3GXT is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 160A IDM, 80mJ EAS, and 0.016 ohm RDS(on). Operating from -55 to 150 °C, it comes in a PLASTIC/EPOXY package with DUAL terminals and built-in DIODE.
BSZ110N08NS5ATMA1
Infineon BSZ110N08NS5ATMA1 is an N-CHANNEL FET with 80V DS breakdown voltage, ideal for switching applications. Features include 160A IDM, 0.011 ohm RDS(on), and 40A ID max. Its small outline package and built-in diode make it suitable for enhancement mode operation in drain-connected cases.
BSZ12DN20NS3GATMA1
Infineon's BSZ12DN20NS3GATMA1 is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 45A IDM, 60mJ EAS, and 0.125 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max temp of 150°C and DUAL terminal position for efficient performance.
BSZ110N06NS3GATMA1
Infineon's BSZ110N06NS3GATMA1 is a N-CHANNEL FET with 60V DS Breakdown Voltage and 80A IDM. Ideal for SWITCHING applications, it features 0.011 ohm RDS(ON) and operates in ENHANCEMENT MODE up to 150°C.
BSZ110N06NS3GXT
Infineon BSZ110N06NS3GXT is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 80A IDM, 55mJ EAS, and 0.011 ohm RDS(on). Operating in ENHANCEMENT MODE at up to 150°C, it has a DUAL terminal position and DRAIN case connection.
BSZ100N06LS3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Minimum DS Breakdown Voltage: 60 V; Transistor Application: SWITCHING;
BSZ16DN25NS3GATMA1
Infineon BSZ16DN25NS3GATMA1 is a N-CHANNEL FET with 250V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 44A IDM, 120mJ EAS, and 0.165 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max temp of 150°C and DUAL terminal position for efficient performance.
BSZ100N06NSATMA1
BSZ100N06NSATMA1 by Infineon is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for SWITCHING applications. It features 160A IDM, 19mJ EAS, and 0.01 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max temp of 150°C and -55°C min temp.
BSZ120P03NS3GATMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY; Operating Mode: ENHANCEMENT MODE;
BSZ146N10LS5ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Operating Mode: ENHANCEMENT MODE; No. of Terminals: 8;
BSZ150N10LS3GATMA1
Infineon Technologies' BSZ150N10LS3GATMA1 is a power FET with N-channel configuration and built-in diode. It is suitable for switching applications, offering a min DS breakdown voltage of 100V and max pulsed drain current of 160A. Its small outline package style and high operating temperature make it ideal for various electronic devices.
BSZ160N10NS3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 63 W; Maximum Operating Temperature: 150 Cel; Case Connection: DRAIN;
BSZ123N08NS3G
Infineon Technologies' BSZ123N08NS3G is an N-channel power FET with a min DS breakdown voltage of 80V. It has a max pulsed drain current of 160A and a max power dissipation of 66W. This transistor is commonly used for switching applications in various industries.
BSZ180P03NS3EGATMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 8; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): 9 A;
Supply Digital Components
$106.00
$54.25
$11.90
$7.29
Quantity
12,000 In-Stock
Total price ≈ $80,197.29
© 2023 All rights reserved