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BSZ123N08NS3G

Infineon Technologies

BSZ123N08NS3G by Infineon Technologies

Infineon Technologies' BSZ123N08NS3G is an N-channel power FET with a min DS breakdown voltage of 80V. It has a max pulsed drain current of 160A and a max power dissipation of 66W. This transistor is commonly used for switching applications in various industries.

Median Price

$1.677

Lifecycle Status

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Mouser Electronics

USA . 345 parts In-Stock

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$2.000

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$0.847

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$0.608

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$0.552

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Verical

USA . 5,000 parts In-Stock

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$1.354

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$1.212

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$1.144

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$1.354

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Digiode

USA . 507 parts In-Stock

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$1.434

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Vyrian

USA . 15,368 parts In-Stock

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Velocity Electronics

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Bristol Electronics

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VNN

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Nova Conductors

Japan . 10 parts In-Stock

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Modulus Dynamics

Lithuania . 5,148 parts In-Stock

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$1.089

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$1.045

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$1.002

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Ampacity Inc.

Singapore . 12,362 parts In-Stock

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$1.150

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Corphita

USA . 219 parts In-Stock

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$1.359

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Corohmni

South Africa . 638 parts In-Stock

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CoreStaff

Japan . 5,000 parts In-Stock

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$2.080

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$0.829

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$0.781

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$2.080

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Andel Nordic

Denmark . 1,228 parts In-Stock

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$22.740

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$15.921

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$15.921

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$15.921

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USA . 6,500 parts In-Stock

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A-Z Elektronik GmbH

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Continental Prestige Electronics

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Argo Parts USA

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Kepictronics

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Futuretech Components

Singapore . 630 parts In-Stock

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Bastille Electronics

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Overview

Infineon Power MOSFETs are designed to bring more efficiency and power density to designers' products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters, and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply, and power consumption.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material ensures durability and reliability for this power FET, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

The N-channel configuration allows for efficient switching and high conductivity, enhancing the performance of this power FET.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode in this power FET simplifies circuit design and provides improved protection against reverse voltage, making it a convenient choice for switching applications.

Transistor Application: SWITCHING

With its optimized design for switching operations, this power FET offers rapid and efficient signal control, making it ideal for applications that require frequent on/off switching.

Surface Mount: YES

The surface mount capability of this power FET facilitates easy installation and allows for compact circuit design, making it a space-saving option.

Minimum DS Breakdown Voltage: 80 V

The minimum DS breakdown voltage of 80 V ensures reliable operation and protection against voltage surges, making it suitable for demanding applications.

Package Shape: SQUARE

The square package shape provides mechanical stability and improved heat dissipation, ensuring the longevity and performance of this power FET.

Terminal Form: NO LEAD

The no-lead terminal form eliminates the risk of lead-related issues and simplifies the assembly process, making this power FET a reliable and user-friendly choice.

Operating Mode: ENHANCEMENT MODE

The enhancement mode operation allows for precise control of the power FET, making it suitable for applications that require high performance and efficiency.

No. of Elements: 1

With a single element, this power FET offers simplicity and ease of use, providing a reliable solution for various circuit designs.

Maximum Pulsed Drain Current (IDM): 160 A

The high maximum pulsed drain current rating of 160 A allows this power FET to handle heavy loads and high-current applications efficiently and reliably.

Avalanche Energy Rating (EAS): 110 mJ

With a high avalanche energy rating of 110 mJ, this power FET provides robust protection against voltage spikes and ensures the safety of connected components.

Maximum Drain Current (Abs) (ID): 40 A

The maximum drain current rating of 40 A enables this power FET to deliver high current capabilities and meet the demands of power-intensive applications.

No. of Terminals: 8

With eight terminals, this power FET offers versatile connectivity options and allows for easy integration into a wide range of circuit configurations.

Maximum Power Dissipation (Abs): 66 W

The high maximum power dissipation rating of 66 W ensures efficient heat management and reliable operation in demanding environments.

Package Style (Meter): SMALL OUTLINE

The small outline package style provides space-saving advantages and ease of integration, making this power FET suitable for compact circuit designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

The metal-oxide semiconductor technology employed in this power FET ensures efficient and reliable performance with low power consumption, making it an excellent choice for energy-efficient applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this power FET can withstand high-temperature environments, ensuring long-term reliability and stability.

Transistor Element Material: SILICON

The silicon transistor element material offers excellent performance characteristics, ensuring low on-resistance and high efficiency for this power FET.

Terminal Finish: TIN

The tin terminal finish provides excellent conductivity and corrosion resistance, enhancing the durability and reliability of this power FET.

Maximum Drain Current (ID): 10 A

The maximum drain current rating of 10 A allows this power FET to handle moderate current loads effectively and reliably.

Maximum Drain-Source On Resistance: 0.0123 ohm

With a low maximum drain-source on resistance of 0.0123 ohm, this power FET minimizes power loss and improves overall efficiency in conducting current.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit design and allows for convenient connections, making this power FET versatile and user-friendly.

Moisture Sensitivity Level (MSL): 1

With a moisture sensitivity level of 1, this power FET exhibits excellent moisture resistance and reliable performance even in humid environments.

Case Connection: DRAIN

The drain case connection allows for efficient heat dissipation and provides mechanical stability, ensuring optimal performance and reliability for this power FET.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this power FET can withstand high-temperature soldering processes, allowing for easy and reliable assembly in manufacturing.

Technical Specifications

Power Field Effect Transistors (FET) BSZ123N08NS3G attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Avalanche Energy Rating (EAS):

110 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

80 V

Maximum Drain Current (Abs) (ID):

40 A

Maximum Drain Current (ID):

10 A

Maximum Drain-Source On Resistance:

.0123 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-N8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

160 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BSZ123N08NS3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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