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BSZ146N10LS5ATMA1

Infineon Technologies

BSZ146N10LS5ATMA1 by Infineon Technologies

Infineon's BSZ146N10LS5ATMA1 is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 160A IDM, 30mJ EAS, and 0.0146 ohm RDS(on). Operating from -55 to 150 °C, it comes in a SMALL OUTLINE package with DUAL terminals and DRAIN connection.

Median Price

$0.995

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 4,855 parts In-Stock

1+ parts

$1.150

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-

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4,855

$1.150

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RS (Exports)

UK . 28,480 parts In-Stock

1+ parts

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$0.648

28,480

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$0.648

Farnell

UK . 8,757 parts In-Stock

1+ parts

-

100+ parts

$0.840

1k+ parts

$0.557

10k+ parts

$0.525

8,757

-

$0.840

$0.557

$0.525

Element14

Singapore . 8,757 parts In-Stock

1+ parts

-

100+ parts

$1.500

1k+ parts

$0.997

10k+ parts

$0.905

8,757

-

$1.500

$0.997

$0.905

Rochester

USA . 7,963 parts In-Stock

1+ parts

-

100+ parts

$0.674

1k+ parts

$0.559

10k+ parts

$0.499

7,963

-

$0.674

$0.559

$0.499

Verical

USA . 4,905 parts In-Stock

1+ parts

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100+ parts

$1.150

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4,905

-

$1.150

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 706 parts In-Stock

1+ parts

$0.523

100+ parts

-

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706

$0.523

-

-

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Nova Conductors

Japan . 200 parts In-Stock

1+ parts

$0.855

100+ parts

-

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200

$0.855

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IBS Electronics

USA . 40,000 parts In-Stock

1+ parts

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$0.532

40,000

-

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$0.532

Vyrian

USA . 36,851 parts In-Stock

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36,851

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Cyclops Electronics Ltd

UK . 5,000 parts In-Stock

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5,000

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TME

Poland . 5,000 parts In-Stock

1+ parts

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$0.546

5,000

-

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$0.546

Bristol Electronics

USA . 5,000 parts In-Stock

1+ parts

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5,000

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Sensible Micro Corp

USA . 4,500 parts In-Stock

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4,500

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VNN

France . 1,902 parts In-Stock

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1,902

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Rutronik

Germany . 1,260 parts In-Stock

1+ parts

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$0.514

1,260

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$0.514

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 32,833 parts In-Stock

1+ parts

$0.370

100+ parts

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32,833

$0.370

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Semicontronic

India . 32,552 parts In-Stock

1+ parts

$0.370

100+ parts

$0.361

1k+ parts

$0.359

10k+ parts

-

32,552

$0.370

$0.361

$0.359

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Corphita

USA . 829 parts In-Stock

1+ parts

$0.496

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829

$0.496

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Corohmni

South Africa . 264 parts In-Stock

1+ parts

$0.669

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264

$0.669

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Argo Parts USA

USA . 4,701 parts In-Stock

1+ parts

$0.791

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4,701

$0.791

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Aranea Global

USA . 50 parts In-Stock

1+ parts

$0.838

100+ parts

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1k+ parts

$0.805

10k+ parts

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50

$0.838

-

$0.805

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Modulus Dynamics

Lithuania . 15,069 parts In-Stock

1+ parts

$0.911

100+ parts

$0.875

1k+ parts

$0.838

10k+ parts

-

15,069

$0.911

$0.875

$0.838

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Aztec Data Supply Inc.

USA . 4,706 parts In-Stock

1+ parts

$1.476

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4,706

$1.476

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QUARKTWIN TECHNOLOGY LTD

USA . 28,696 parts In-Stock

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Perfect Parts

USA . 11,267 parts In-Stock

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11,267

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Continental Prestige Electronics

USA . 8,870 parts In-Stock

1+ parts

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$0.954

1k+ parts

$0.602

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8,870

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$0.954

$0.602

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Microchip USA

USA . 8,869 parts In-Stock

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8,869

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GreenTree Electronics

Israel . 5,000 parts In-Stock

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Robosynatics

Brazil . 3,272 parts In-Stock

1+ parts

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$1.756

1k+ parts

$1.720

10k+ parts

$1.720

3,272

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$1.756

$1.720

$1.720

Lucentia Tech

USA . 3,272 parts In-Stock

1+ parts

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100+ parts

$1.756

1k+ parts

$1.720

10k+ parts

$1.720

3,272

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$1.756

$1.720

$1.720

Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

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3,000

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Overview

Unleash the power of cutting-edge technology with the BSZ146N10LS5ATMA1 by Infineon Technologies. Crafted with precision and expertise, this N-CHANNEL Power Field Effect Transistor is a game-changer in the world of switching applications. With a high DS Breakdown Voltage and efficient design, this transistor offers unmatched performance and reliability. Whether you're looking to enhance your electronic projects or streamline industrial processes, this transistor's built-in diode and low on-resistance make it the perfect choice. Elevate your designs with the BSZ146N10LS5ATMA1 and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and resistant to heat and moisture, ensuring longevity and reliability in various operating conditions.

Polarity or Channel Type: N-CHANNEL

Provides efficient operation and performance for applications requiring N-channel FETs.

Minimum DS Breakdown Voltage: 100 V

Suitable for high voltage applications, ensuring safe and reliable operation under high voltage conditions.

Maximum Pulsed Drain Current (IDM): 160 A

Capable of handling high current pulses, making it ideal for applications requiring high power handling capabilities.

Maximum Power Dissipation (Abs): 52 W

Ability to dissipate heat efficiently, allowing for continuous and reliable operation under high power conditions.

Maximum Operating Temperature: 150 °C

Can operate effectively in high temperature environments, making it suitable for a wide range of applications.

Technical Specifications

Power Field Effect Transistors (FET) BSZ146N10LS5ATMA1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Avalanche Energy Rating (EAS):

30 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (Abs) (ID):

40 A

Maximum Drain Current (ID):

40 A

Maximum Drain-Source On Resistance:

.0146 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

15 pF

JESD-30 Code:

S-PDSO-N8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

160 A

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BSZ146N10LS5ATMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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