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BSZ160N10NS3GXT

Infineon Technologies

BSZ160N10NS3GXT by Infineon Technologies

Infineon's BSZ160N10NS3GXT is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 160A IDM, 80mJ EAS, and 0.016 ohm RDS(on). Operating from -55 to 150 °C, it comes in a PLASTIC/EPOXY package with DUAL terminals and built-in DIODE.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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VNN

France . 6,778 parts In-Stock

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Vyrian

USA . 4,813 parts In-Stock

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Digiode

USA . 310 parts In-Stock

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310

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Corohmni

South Africa . 1,180 parts In-Stock

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$0.451

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$0.451

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Aztec Data Supply Inc.

USA . 36,192 parts In-Stock

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$0.740

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Ampacity Inc.

Singapore . 4,781 parts In-Stock

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$0.830

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$0.830

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Advanced Electronics

New Zealand . 300 parts In-Stock

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$1.913

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$1.817

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$1.817

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300

$1.913

$1.817

$1.817

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Modulus Dynamics

Lithuania . 20,062 parts In-Stock

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$1.979

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$1.900

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$1.821

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AZTECH Wire

Italy . 661 parts In-Stock

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$7.474

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Semicontronic

India . 278 parts In-Stock

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$8.050

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$7.849

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$7.808

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Continental Prestige Electronics

USA . 5,434 parts In-Stock

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Argo Parts USA

USA . 4,724 parts In-Stock

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Bastille Electronics

Australia . 700 parts In-Stock

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Corphita

USA . 585 parts In-Stock

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Robosynatics

Brazil . 500 parts In-Stock

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500

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Lucentia Tech

USA . 500 parts In-Stock

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$0.811

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$0.751

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$0.751

500

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$0.811

$0.751

$0.751

Overview

Unleash the power of Infineon Technologies with the BSZ160N10NS3GXT Power Field Effect Transistor. This high-quality N-CHANNEL transistor is designed for switching applications, offering a maximum pulsed drain current of 160A and a minimum DS breakdown voltage of 100V. With a built-in diode and small outline package style, this transistor provides efficient and reliable performance. Whether you're looking to enhance your electronic devices or optimize power management systems, the BSZ160N10NS3GXT delivers exceptional value and benefits to meet your needs. Elevate your projects with the superior technology and innovation of Infineon Technologies.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the internal components of the transistor, ensuring durability and reliability in various operating conditions.

Polarity or Channel Type: N-CHANNEL

N-channel FETs generally have lower ON-state resistance and faster switching speeds compared to P-channel FETs, making them an efficient choice for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for efficient switching and protection against reverse current flow, enhancing the overall performance and reliability of the transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET can handle high currents and voltages with minimal power loss, making it suitable for a wide range of electronic circuits.

Surface Mount: YES

Surface mount technology enables easy and compact installation of the transistor on a PCB, saving space and ensuring efficient heat dissipation for improved performance.

Minimum DS Breakdown Voltage: 100 V

With a high breakdown voltage, this FET can reliably handle high voltages without risking damage, making it suitable for use in power systems and industrial applications.

Maximum Pulsed Drain Current (IDM): 160 A

The ability to handle high pulsed currents makes this FET ideal for applications requiring short bursts of power, such as motor control and switching power supplies.

Maximum Power Dissipation (Abs): 63 W

With a high power dissipation rating, this FET can efficiently handle and dissipate heat generated during operation, ensuring reliable performance under high load conditions.

Technical Specifications

Power Field Effect Transistors (FET) BSZ160N10NS3GXT attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Avalanche Energy Rating (EAS):

80 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

40 A

Maximum Drain-Source On Resistance:

.016 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-N8

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

160 A

Surface Mount:

YES

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BSZ160N10NS3GXT Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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