Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Infineon's IPA80R460CEXKSA2 is a N-CHANNEL FET with 800V DS breakdown voltage, ideal for switching applications. Featuring 33A IDM and 0.46 ohm RDS(on), it operates in enhancement mode with 470mJ EAS. The transistor has a single configuration with built-in diode, suitable for high-power requirements in various industries.
Median Price
$2.715
Lifecycle Status
Suppliers In-Stock
14
In-Stock Inventory
1k+
Farnell
1+ parts
$2.500
100+ parts
$1.460
1k+ parts
$0.972
10k+ parts
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Chip1Stop
$2.930
$1.220
$1.100
DigiKey
$3.120
$1.409
$1.058
$1.008
Mouser Electronics
$3.720
$1.690
$1.270
$1.170
Element14
$3.960
$2.620
$1.740
Rochester
$1.370
$1.140
$1.010
Verical
$1.425
$1.262
Arrow
$1.157
$1.114
Digiode
Nova Conductors
$1.760
Rutronik
NAC Semi
$1.870
$1.730
Vyrian
TME
$1.350
Aztec Data Supply Inc.
$0.297
Ampacity Inc.
$0.980
Semicontronic
$0.956
$0.951
Corphita
$1.080
Component Stockers USA
$1.310
$1.230
$1.120
$1.930
Argo Parts USA
Bastille Electronics
$1.672
$1.588
$1.566
Modulus Dynamics
$2.020
$1.939
$1.858
Corohmni
Advanced Electronics
$2.081
$1.977
Continental Prestige Electronics
$2.600
$1.540
Benley Electronics
$8.750
Microchip USA
$18.330
iodParts Technologies Inc.
Eastek
A-Z Elektronik GmbH
GreenTree Electronics
The plastic/epoxy package body material ensures durability and protection for the internal components of the FET.
N-channel FETs typically offer lower ON-state resistance and higher switching speeds, making them suitable for various power applications.
Having a built-in diode allows for efficient control of current flow and protects the circuit from reverse voltage spikes.
Designed specifically for switching applications, this FET is capable of handling high currents and voltages with minimal power loss.
The high breakdown voltage of 800V ensures reliable operation and protection against voltage spikes.
The rectangular package shape allows for efficient placement on circuit boards and optimal use of space.
The through-hole terminal form simplifies the installation process and provides secure connections to the circuit board.
Enhancement mode FETs offer easy control of the gate voltage to switch the transistor on and off, making them suitable for various applications.
The high pulsed drain current rating of 33A allows for handling sudden current spikes without compromising performance.
The high avalanche energy rating of 470mJ ensures protection against energy spikes and enhances the reliability of the FET.
Having 3 terminals provides the necessary connections for the FET to function effectively within a circuit.
The flange mount package style allows for secure mounting and efficient heat dissipation, enhancing the overall performance of the FET.
Metal-oxide semiconductor technology offers reliable performance, low power consumption, and high switching speeds for the FET.
Silicon material ensures high reliability and performance for the transistor element, making it a suitable choice for various applications.
The tin terminal finish provides corrosion resistance and ensures reliable electrical connections for the FET.
With a maximum drain current of 10.8A, this FET can handle high continuous currents without overheating or performance degradation.
The low drain-source on resistance of 0.46 ohms minimizes power loss and improves efficiency in switching applications.
The single terminal position simplifies the connection process and ensures easy integration into the circuit design.
The isolated case connection provides protection against voltage spikes and ensures safe operation within the circuit.
Power Field Effect Transistors (FET) IPA80R460CEXKSA2 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies
Avalanche Energy Rating (EAS):
Case Connection:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Pulsed Drain Current (IDM):
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
IPA80R460CEXKSA2 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
2N2222A
Crystalonics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
2N7002
Vishay Intertechnology
2N7002 by Vishay Intertechnology is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE, suitable for surface mount with GULL WING terminals.
LL4148
Changzhou Starsea Electronics
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
BSS138BK,215
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Additional Features: LOGIC LEVEL COMPATIBLE; Maximum Operating Temperature: 150 Cel;
1N5819HW-7-F
SPC TECHNOLOGY/ MULTICOMP
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Silicon Standard
LM317T/NOPB
National Semiconductor
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; JESD-609 Code: e3; Package Shape: RECTANGULAR;
SMBJ18CA
Micro Commercial Components
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
PIC18F4550-I/ML
Microchip Technology
The Microchip Technology PIC18F4550-I/ML is an 8-bit microcontroller with a max clock frequency of 48 MHz. It features 13-Ch 10-Bit ADC channels and USB connectivity, making it ideal for industrial applications requiring high-speed data processing and analog-to-digital conversion. With low power mode and flash ROM programmability, this chip offers efficient performance in compact designs.
OPA2277UA/2K5
Texas Instruments
OPA2277UA/2K5 by Texas Instruments is a dual operational amplifier with low offset voltage of 100 uV and micropower consumption of 0.004 uA. Ideal for industrial applications, it offers high common mode rejection ratio of 140 dB and unity gain bandwidth of 1 MHz. With a compact rectangular package style, it is suitable for surface mount designs in various electronic systems.
Vishay Telefunken
ULN2803A
Onsemi
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified;
BAV99
Gec Plessey Semiconductors
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
SS14
Jinan Jingheng Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
CRCW04020000Z0EDHP
Vishay Intertechnology's CRCW04020000Z0EDHP is a 0402 SMT resistor with 0 ohm resistance, rated for temperatures from -55°C to 155°C. Ideal for jumper applications in automotive electronics due to AEC-Q200 compliance and compact size of 1mm x 0.5mm x 0.3mm.
Mde Semiconductor
Formosa Microsemi
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): .115 A;
1N4148WT
Continental Device India
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM107H/883C
LM107H/883C by National Semiconductor is a MILITARY-grade Operational Amplifier with +-5/+-15V supplies. Featuring 2000uV max input offset voltage, it operates from -55 to 125 °C. Ideal for applications requiring VOLTAGE-FEEDBACK architecture and frequency compensation.
ECA2DHG4R7
Panasonic
ECA2DHG4R7 by Panasonic is a 4.7uF aluminum electrolytic capacitor with 200V rated DC voltage. It features tan delta of 0.15, leakage current of 0.0664mA, and ripple current of 50mA, making it ideal for applications requiring high capacitance stability and low leakage in through-hole mounting setups at temperatures ranging from -25 to 105°C.
NTF2955T1G
NTF2955T1G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 10.4A IDM, 225mJ EAS, and 0.185 ohm RDS(on). With ENHANCEMENT MODE operation and DUAL terminal position, it offers efficient power dissipation up to 1.92W in a SMALL OUTLINE package.
IRFR120NTRPBF
Infineon Technologies
IRFR120NTRPBF by Infineon Technologies is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 38A Pulsed Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 0.21 ohm On Resistance, and operates in ENHANCEMENT MODE.
IRF1010NSTRLPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 170 W; Qualification: Not Qualified; Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier;
2N7002PV,115
NXP Semiconductors
2N7002PV,115 by NXP Semiconductors is an N-CHANNEL Power FET with 0.35A Max Drain Current and 0.5W Max Power Dissipation. It operates in ENHANCEMENT MODE and can withstand temperatures from -55 to 150 °C. Ideal for applications requiring high power efficiency in compact designs.
AUIRFZ44NSTRR
AUIRFZ44NSTRR by Infineon is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max Pulsed Drain Current of 160A and Max Power Dissipation of 94W. With ENHANCEMENT MODE operation and METAL-OXIDE SEMICONDUCTOR technology, it offers high performance in various power management systems.
IPB64N25S320ATMA1
Infineon's IPB64N25S320ATMA1 is a N-CHANNEL FET with 250V DS breakdown voltage, 64A max drain current, and 0.02 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance and 256A IDM rating.
SQM120P06-07L-GE3
Vishay Intertechnology's SQM120P06-07L-GE3 is a P-channel power FET with 60V DS breakdown voltage, 120A max drain current, and 0.0067 ohm on-resistance. Ideal for high-power applications in enhancement mode operation with 480A pulsed drain current capability.
PMV40UN2R
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 5 W; No. of Elements: 1; Reference Standard: IEC-60134;
BSC600N25NS3GATMA1
BSC600N25NS3GATMA1 by Infineon is a N-CHANNEL FET with 250V DS Breakdown Voltage, 100A IDM, and 0.06 ohm RDS(on). It's used for SWITCHING applications in ENHANCEMENT MODE. The transistor operates b/w -55 to 150 °C and has a max power dissipation of 125W in a SMALL OUTLINE package.
IRF9530PBF
Vishay Siliconix
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-220AB; Transistor Application: SWITCHING; Terminal Position: SINGLE;
IRFS7530TRL7PP
Infineon's IRFS7530TRL7PP is a N-CHANNEL FET with 60V DS Breakdown Voltage, 240A ID, and 0.0014 ohm RDS(on). Ideal for power applications, it offers 375W Pd max, operates up to 175°C, and features MOSFET technology. Suitable for surface mount designs with matte tin finish.
STB6NK90ZT4
STMicroelectronics
STB6NK90ZT4 by STMicroelectronics is a N-CHANNEL FET with 900V DS breakdown voltage, 23.2A IDM, and 300mJ EAS. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 140W at 150°C.
FDD4685-F085P
FDD4685-F085P by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 32A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has an Avalanche Energy Rating of 121mJ.
IAUT300N10S5N015ATMA1
Infineon's IAUT300N10S5N015ATMA1 is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 1200A IDM and 0.0015 ohm RDS(on), it operates in ENHANCEMENT MODE with 44ns ton and 118ns toff. This MOSFET has a max power dissipation of 375W, making it suitable for high-power electronic systems.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 94 W; JESD-609 Code: e3; Terminal Position: SINGLE;
BSP89H6327XTSA1
Infineon's BSP89H6327XTSA1 is a N-CHANNEL Power FET with 240V DS Breakdown Voltage. It features 1.4A IDM, 0.35A ID, and 6ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance and small outline package style.
CSD18563Q5A-P
CSD18563Q5A-P by Texas Instruments is an N-CHANNEL FET for SWITCHING applications. It features a 60V DS Breakdown Voltage, 251A IDM, and 0.0108 ohm Drain-Source On Resistance. With a max operating temperature of 150°C, this MOSFET is suitable for high-power switching tasks in various electronic devices.
LTC4451AV#TRPBF
Analog Devices
Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 4; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260;
FQP47P06
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; JESD-30 Code: R-PSFM-T3; Maximum Pulsed Drain Current (IDM): 188 A;
NTD5867NLT4G
NTD5867NLT4G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 76A IDM, and 0.05 ohm RDS(ON). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for power management applications requiring high current handling capabilities.
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IPA80R650CEXKSA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 3; Terminal Position: SINGLE; Terminal Finish: TIN;
IPA80R1K0CEXKSA2
Infineon's IPA80R1K0CEXKSA2 is a N-CHANNEL FET with 800V DS breakdown voltage, ideal for SWITCHING applications. Features include 18A IDM, 230mJ EAS, and 0.95 ohm RDS(on). Package style: FLANGE MOUNT, technology: MOSFET, element material: Si.
IPA80R1K4CEXKSA2
Infineon's IPA80R1K4CEXKSA2 is a N-CHANNEL FET with 800V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 12A IDM, 170mJ EAS, and 1.4Ω RDS(on). Package style: FLANGE MOUNT, Terminal finish: TIN, Technology: MOSFET.
IPA80R310CEXKSA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Terminal Finish: TIN; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IPA80R280P7XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; JESD-609 Code: e3; Package Style (Meter): FLANGE MOUNT;
IPA80R900P7XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Package Shape: RECTANGULAR; Maximum Drain-Source On Resistance: .9 ohm;
IPA80R460CE
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-220AB; Case Connection: ISOLATED; Operating Mode: ENHANCEMENT MODE;
IPA80R460CEXKSA1
Infineon Technologies' IPA80R460CEXKSA1 is a power FET with a min DS breakdown voltage of 800V. It has a max pulsed drain current of 33A and an avalanche energy rating of 470mJ. This N-channel transistor is commonly used for switching applications.
IPA80R360P7XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PSFM-T3; Maximum Drain-Source On Resistance: .36 ohm;
IPA80R1K4P7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 24 W; Maximum Drain Current (ID): 4 A; JESD-609 Code: e3;
IPA80R450P7XKSA1
Infineon's IPA80R450P7XKSA1 is a N-CHANNEL FET with 800V DS breakdown voltage, 0.45 ohm RDS(on), and 29A IDM. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has an EAS of 29mJ.
IPA80R360P7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Avalanche Energy Rating (EAS): 34 mJ; JESD-30 Code: R-PSFM-T3;
IPA80R450P7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 29 W; JESD-609 Code: e3; Maximum Operating Temperature: 150 Cel;
IPA80R1K2P7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; Maximum Drain Current (ID): 4.5 A; Package Shape: RECTANGULAR;
IPA80R1K4P7XKSA1
Power Field-Effect Transistors; JESD-609 Code: e3; Terminal Finish: TIN;
IPA80R1K0CEXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 5.7 A; JEDEC-95 Code: TO-220AB; Package Body Material: PLASTIC/EPOXY;
IPA80R1K2P7XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): FLANGE MOUNT; Minimum DS Breakdown Voltage: 800 V;
IPA80R280P7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Minimum Operating Temperature: -55 Cel; Maximum Drain Current (ID): 17 A;
IPA80R1K4CE
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Avalanche Energy Rating (EAS): 170 mJ; No. of Terminals: 3; Terminal Finish: TIN;
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