Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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NXH010P120MNF1PNG
Onsemi
NXH010P120MNF1PNG by Onsemi is a N-CHANNEL FET with 1200V DS breakdown voltage, 342A IDM, and 0.014 ohm RDS(on). Ideal for switching applications, it features SERIES CONNECTED configuration with 2 elements, built-in diode & thermistor. Operating in enhancement mode, it has a max power dissipation of 250W and operates b/w -40 to 175 °C.
ISOLATED
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
1200 V
114 A
.014 ohm
METAL-OXIDE SEMICONDUCTOR
39 pF
R-XUFM-X18
2
18
ENHANCEMENT MODE
175 Cel
-40 Cel
UNSPECIFIED
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
250 W
342 A
NO
UPPER
SWITCHING
SILICON CARBIDE
NXH006P120MNF2PTG
NXH006P120MNF2PTG by Onsemi is a N-CHANNEL FET with 1200V DS breakdown voltage, 912A IDM, and 0.0072 ohm RDS(on). It is used for switching applications in power systems. The transistor features a rectangular package shape, 36 terminals, and operates in enhancement mode up to 175°C.
304 A
.0072 ohm
49 pF
R-XUFM-X36
36
950 W
912 A
NVHL110N65S3HF
NVHL110N65S3HF by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. It has a max IDM of 69A and EAS of 380mJ, suitable for SWITCHING applications. Operating in ENHANCEMENT MODE, it offers 0.11 ohm RDS(on) and can handle up to 240W power dissipation.
380 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
650 V
30 A
.11 ohm
TO-247
R-PSFM-T3
e3
1
3
150 Cel
-55 Cel
PLASTIC/EPOXY
240 W
69 A
AEC-Q101
Matte Tin (Sn) - annealed
THROUGH-HOLE
SINGLE
SILICON
MSCSM170HM12CAG
Microchip Technology
MSCSM170HM12CAG by Microchip is an N-CHANNEL FET with 1700V DS breakdown voltage, ideal for switching applications. It features 4 elements, 360A IDM, and 0.015 ohm max drain-source resistance. With a max power dissipation of 843W and operating temperature range from -40 to 175 °C, it offers high performance in complex configurations.
COMPLEX
1700 V
179 A
.015 ohm
30 pF
R-XUFM-X12
4
12
843 W
360 A
MSCSM170HM23CT3AG
MSCSM170HM23CT3AG by Microchip Technology is a N-CHANNEL Power FET with 4 elements in a bridge configuration. It operates in enhancement mode for switching applications, offering a min DS breakdown voltage of 1700V and max pulsed drain current of 240A. Ideal for high-power systems requiring efficient and reliable performance at temperatures ranging from -40 to 175°C.
BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
124 A
.0225 ohm
20 pF
R-XUFM-X25
25
240 A
MSCSM170HM45CT3AG
MSCSM170HM45CT3AG by Microchip is a N-CHANNEL FET with 4 elements in bridge configuration. It operates in enhancement mode for switching applications, with a min DS breakdown voltage of 1700V and max pulsed drain current of 130A. This power FET features silicon carbide material, 0.045 ohm max drain-source resistance, and can operate b/w -40 to 175 °C.
BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE
64 A
.045 ohm
10 pF
130 A
IXFH48N60X3
Littelfuse
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 520 W; Terminal Form: THROUGH-HOLE; Transistor Application: SWITCHING;
AVALANCHE RATED
1400 mJ
600 V
48 A
.065 ohm
18 pF
TO-247AD
520 W
68 A
IXFH60N60X3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 625 W; Maximum Pulsed Drain Current (IDM): 90 A; Maximum Drain-Source On Resistance: .051 ohm;
1700 mJ
60 A
.051 ohm
53 pF
TO-220AD
625 W
90 A
IXFH78N60X3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 780 W; Maximum Operating Temperature: 150 Cel; JEDEC-95 Code: TO-247AD;
2200 mJ
78 A
.038 ohm
36 pF
780 W
120 A
IXFH98N60X3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 960 W; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 600 V;
2800 mJ
98 A
.03 ohm
41 pF
960 W
160 A
IXFP36N60X3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 446 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 3;
750 mJ
36 A
.09 ohm
3.6 pF
TO-220AB
446 W
IXFH36N60X3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 446 W; Terminal Form: THROUGH-HOLE; Avalanche Energy Rating (EAS): 750 mJ;
LSIC1MO120G0080
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 214 W; Maximum Feedback Capacitance (Crss): 9 pF; JESD-30 Code: R-PSFM-T4;
ULTRA LOW RESISTANCE
39 A
.1 ohm
9 pF
R-PSFM-T4
214 W
80 A
LSIC1MO120G0120
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 156 W; Package Style (Meter): FLANGE MOUNT; Maximum Drain-Source On Resistance: .15 ohm;
27 A
.15 ohm
7 pF
156 W
LSIC1MO120G0160
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Minimum DS Breakdown Voltage: 1200 V; Operating Mode: ENHANCEMENT MODE;
22 A
.2 ohm
5 pF
125 W
45 A
LSIC1MO120G0025
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 500 W; Minimum DS Breakdown Voltage: 1200 V; No. of Terminals: 4;
100 A
.032 ohm
14 pF
500 W
200 A
LSIC1MO120G0040
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 357 W; Maximum Pulsed Drain Current (IDM): 130 A; Package Shape: RECTANGULAR;
70 A
.05 ohm
13 pF
357 W
MSCSM170AM11CT3AG
MSCSM170AM11CT3AG by Microchip Technology is a N-CHANNEL FET with 1700V DS Breakdown Voltage, 480A IDM, and 0.0113 ohm RDS(on). It is used for SWITCHING applications in SERIES CONNECTED configuration. Operating from -40 to 175 °C, it features METAL-OXIDE SEMICONDUCTOR technology and SILICON CARBIDE material.
.0113 ohm
40 pF
480 A
IXTH220N20X4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 800 W; Maximum Drain-Source On Resistance: .0055 ohm; Case Connection: DRAIN;
900 mJ
200 V
220 A
.0055 ohm
5.4 pF
800 W
400 A
IXTQ48N65X2M
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 70 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR;
1500 mJ
6.4 pF
70 W
IXTH94N20X4
IXTH94N20X4 by Littelfuse is a N-CHANNEL FET with 200V DS breakdown voltage and 220A pulsed drain current. Ideal for switching applications, it operates in enhancement mode with 360W power dissipation.
1000 mJ
94 A
.0106 ohm
4 pF
360 W
IXTQ34N65X2M
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 43 W; Minimum Operating Temperature: -55 Cel; JESD-30 Code: R-PSFM-T3;
34 A
.096 ohm
1.7 pF
43 W
DMC2025UFDBQ-13
Diodes Incorporated
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1.4 W; Avalanche Energy Rating (EAS): 8.5 mJ; Case Connection: DRAIN;
8.5 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
20 V
6 A
.035 ohm
77 pF
R-PDSO-N6
e4
6
SQUARE
SMALL OUTLINE
260
N-CHANNEL AND P-CHANNEL
1.4 W
20 A
AEC-Q101; IATF 16949; MIL-STD-202
NICKEL PALLADIUM GOLD
NO LEAD
DUAL
TK5A60W,S4VX
Toshiba
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Maximum Drain-Source On Resistance: .9 ohm; No. of Terminals: 3;
71 mJ
5.4 A
.9 ohm
1.5 pF
30 W
21.6 A
STFH12N105K5
STMicroelectronics
STFH12N105K5 from STMicroelectronics is an N-channel FET ideal for switching applications. It features a 1050V breakdown voltage, 15A max pulsed drain current, and operates at temperatures from -55 °C to 150 °C. Its compact design ensures efficient performance in various electronic circuits.
850 mJ
1050 V
8 A
1 ohm
.6 pF
29 W
15 A
Matte Tin (Sn)
STWA75N65DM6
STWA75N65DM6 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 75A max drain current, and 480W power dissipation. Ideal for high-efficiency power management in various electronic devices.
1900 mJ
75 A
.036 ohm
3 pF
480 W
280 A
NVH4L020N090SC1
NVH4L020N090SC1 by Onsemi is a N-CHANNEL FET with 900V DS Breakdown Voltage, ideal for SWITCHING applications. It features 504A IDM, 264mJ EAS, and 0.028 ohm RDS(on). With a max power dissipation of 484W and operating temperature range from -55 to 175 °C, it's suitable for high-power environments.
264 mJ
900 V
116 A
.028 ohm
24 pF
484 W
504 A
NXH020U90MNF2PTG
NXH020U90MNF2PTG by Onsemi is a N-CHANNEL FET with 900V DS Breakdown Voltage and 447A IDM. Ideal for SWITCHING applications, it features 0.014 ohm Drain-Source On Resistance and operates b/w -40 to 175 °C.
149 A
44 pF
R-XUFM-X20
20
352 W
447 A
NXH040F120MNF1PTG
NXH040F120MNF1PTG by Onsemi is a N-CHANNEL Power FET with 1200V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring a BRIDGE configuration with 4 elements, it has a max IDM of 90A and 0.056 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, this FET utilizes SILICON CARBIDE technology and can handle temperatures from -40 to 175 °C.
.056 ohm
12 pF
R-XUFM-X22
22
NOT SPECIFIED
74 W
NXH020F120MNF1PG
N-CHANNEL; Configuration: BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 119 W; Transistor Element Material: SILICON CARBIDE; Package Body Material: UNSPECIFIED;
51 A
19 pF
119 W
153 A
NXH020F120MNF1PTG
NXH020F120MNF1PTG by Onsemi is a N-CHANNEL FET with 1200V DS Breakdown Voltage, 153A IDM, and 0.03 ohm RDS(on). Ideal for SWITCHING applications, it features a BRIDGE configuration with 4 elements, SILICON CARBIDE material, and operates b/w -40 to 175 °C.
NXH040F120MNF1PG
NXH040F120MNF1PG by Onsemi is a N-CHANNEL Power FET with 1200V DS Breakdown Voltage, 90A IDM, and 0.056 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE. This RECTANGULAR package has 4 elements with built-in diode and thermistor, ideal for high-power operations up to 175°C.
NXH010P120MNF1PTG
NXH010P120MNF1PTG by Onsemi is a N-CHANNEL FET with 1200V DS Breakdown Voltage, 342A IDM, and 0.014 ohm RDS(on). It is used for SWITCHING applications in SERIES CONNECTED configuration. Operating from -40 to 175 °C, it features METAL-OXIDE SEMICONDUCTOR tech and SILICON CARBIDE material.
NXH010P120MNF1PG
NXH010P120MNF1PG by Onsemi is a N-CHANNEL FET with 1200V DS breakdown voltage, 342A IDM, and 0.014 ohm RDS(on). Ideal for switching applications in power electronics due to its SERIES CONNECTED configuration. Operating from -40 to 175 °C, it features a METAL-OXIDE SEMICONDUCTOR technology and built-in diode & thermistor.
IXTP60N20X4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Package Body Material: PLASTIC/EPOXY; Avalanche Energy Rating (EAS): 350 mJ;
350 mJ
.021 ohm
.95 pF
106 A
IXTH60N20X4
IXTH60N20X4 by Littelfuse is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 106A IDM, 350mJ EAS, and 0.021 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, it has a max power dissipation of 250W and can handle up to 60A ID.
DMT15H035SCT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 166 W; Terminal Finish: MATTE TIN; No. of Terminals: 3;
144.5 mJ
150 V
46 A
4.2 pF
166 W
184 A
MIL-STD-202
MATTE TIN
MSC080SMA330B4
MSC080SMA330B4 by Microchip is a N-CHANNEL FET with 3300V DS breakdown voltage, ideal for switching applications. It features a max IDM of 100A and 0.105 ohm RDS(on), operating in enhancement mode. With a package style of FLANGE MOUNT, it can handle up to 381W power dissipation at temperatures ranging from -55 to 150 °C.
3300 V
41 A
.105 ohm
381 W
MSC400SMA330B4
MSC400SMA330B4 by Microchip Technology is a N-CHANNEL FET with 3300V DS breakdown voltage and 27A IDM. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 131W. The transistor features a drain-source on resistance of 0.52 ohm and can withstand temperatures from -55 to 150 °C.
11 A
.52 ohm
2 pF
131 W
IMZA120R007M1HXKSA1
Infineon Technologies
IMZA120R007M1HXKSA1 by Infineon is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for switching applications. Featuring a built-in diode and Kelvin sensor, it operates in enhancement mode with 504A IDM and 638mJ EAS. With a max power dissipation of 750W, this MOSFET has a low 0.0111 ohm RDS(on) for efficient performance at temperatures ranging from -55 to 175°C.
638 mJ
SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR
225 A
.0111 ohm
61 pF
750 W
IMZA120R040M1HXKSA1
IMZA120R040M1HXKSA1 by Infineon is a N-CHANNEL FET with 1200V DS breakdown voltage, 117A IDM, and 0.0615 ohm max RDS(on). It's used for switching applications due to its single configuration with built-in diode. The transistor operates in enhancement mode and has a max power dissipation of 227W.
339 mJ
55 A
.0615 ohm
11 pF
227 W
117 A
IXFP26N65X2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 460 W; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;
26 A
.13 ohm
1.2 pF
460 W
IXFH26N65X2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 460 W; Maximum Operating Temperature: 150 Cel; Transistor Application: SWITCHING;
FQP50N06L-EPKE0003
FQP50N06L-EPKE0003 by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage. It has 210A IDM and 990mJ EAS, ideal for SWITCHING applications. Operating in ENHANCEMENT MODE, it offers 0.025 ohm RDS(on) and can handle up to 121W power dissipation.
990 mJ
60 V
52.4 A
.025 ohm
120 pF
121 W
210 A
470 ns
820 ns
IXFH70N65X3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 780 W; Transistor Application: SWITCHING; Transistor Element Material: SILICON;
2500 mJ
.044 ohm
25 pF
110 A
IXFH34N65X3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 446 W; Transistor Element Material: SILICON; Maximum Drain-Source On Resistance: .1 ohm;
2.6 pF
IXFN74N100X
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1170 W; Terminal Form: UNSPECIFIED; Transistor Application: SWITCHING;
2000 mJ
1000 V
74 A
.066 ohm
48 pF
R-PUFM-X4
1170 W
150 A
UL RECOGNIZED
IXFH46N65X3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 520 W; Maximum Operating Temperature: 150 Cel; Maximum Feedback Capacitance (Crss): 18 pF;
1200 mJ
.073 ohm
65 A
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