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CCB021M12FM3

Wolfspeed

CCB021M12FM3 by Wolfspeed

Wolfspeed CCB021M12FM3 is a N-CHANNEL FET with 1200V DS breakdown voltage, 106A IDM, and 0.0279 ohm RDS(on). Ideal for switching applications, it features a bridge configuration with 6 elements, built-in diode and thermistor. Operating in enhancement mode, it uses silicon carbide technology and can withstand temperatures from -40 to 150 °C.

Median Price

$150.370

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

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Arrow

USA . 1 parts In-Stock

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$117.340

100+ parts

$106.380

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$104.260

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1

$117.340

$106.380

$104.260

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DigiKey

USA . 48 parts In-Stock

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$150.370

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$126.625

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48

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$126.625

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Mouser Electronics

USA . 27 parts In-Stock

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$150.370

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27

$150.370

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Chip1Stop

Japan . 68 parts In-Stock

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$152.000

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$152.000

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Richardson RFPD

USA . 192 parts In-Stock

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$125.900

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$125.900

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Verical

USA . 126 parts In-Stock

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$151.080

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126

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$151.080

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Nova Conductors

Japan . 15 parts In-Stock

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$217.885

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Vyrian

USA . 8,273 parts In-Stock

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Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$0.666

100+ parts

$0.633

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$0.633

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100

$0.666

$0.633

$0.633

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Aztec Data Supply Inc.

USA . 1,262 parts In-Stock

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$1.440

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$1.440

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AZTECH Wire

Italy . 642 parts In-Stock

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$14.223

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Semicontronic

India . 75 parts In-Stock

1+ parts

$108.830

100+ parts

$106.109

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$105.565

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75

$108.830

$106.109

$105.565

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Aranea Global

USA . 50 parts In-Stock

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$213.527

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$204.986

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50

$213.527

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$204.986

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Continental Prestige Electronics

USA . 5,103 parts In-Stock

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$215.460

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$211.151

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$215.460

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$211.151

Microchip USA

USA . 9,111 parts In-Stock

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$345.060

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Argo Parts USA

USA . 4,079 parts In-Stock

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4,079

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Overview

Enhance your power switching applications with the CCB021M12FM3 by Wolfspeed, a top-quality N-CHANNEL Power FET. Featuring a bridge configuration with built-in diode and thermistor, this transistor offers exceptional performance and reliability. With a maximum pulsed drain current of 106 A and a minimum DS breakdown voltage of 1200 V, this transistor is ideal for a wide range of high-power applications. Trust Wolfspeed's expertise in semiconductor technology to deliver cutting-edge solutions that provide value, efficiency, and superior performance for your projects.

Feature Benefit Bullets

Polarity or Channel Type:

N-CHANNEL - Provides efficient current flow in the intended direction, ideal for applications requiring high power and low resistance.

Configuration:

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR - Offers versatile functionality with multiple elements and integrated components, suitable for complex circuit designs.

Transistor Application:

SWITCHING - Specifically designed to control the flow of electrical current, making it reliable for various switching applications.

Minimum DS Breakdown Voltage:

1200 V - Ensures durable performance under high voltage conditions, suitable for power systems requiring reliable insulation.

Package Shape:

RECTANGULAR - Simplifies installation and allows for efficient use of space, making it convenient for compact designs.

Operating Mode:

ENHANCEMENT MODE - Enables enhanced control over the transistor's conductivity, improving efficiency and performance in operation.

Maximum Pulsed Drain Current (IDM):

106 A - Capable of handling high current levels during peak operation, suitable for power systems with varying demands.

No. of Elements:

6 - Provides redundancy and scalability in circuit design, ensuring reliability and adaptability to different requirements.

No. of Terminals:

22 - Offers versatile connectivity options, making it compatible with various circuit configurations and facilitating easy integration.

Package Style (Meter):

FLANGE MOUNT - Facilitates secure mounting and heat dissipation, ensuring stable performance in demanding environments.

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR - Delivers high efficiency and low power consumption, making it an energy-efficient choice for power applications.

Maximum Operating Temperature:

150 °C - Supports reliable operation in high-temperature environments, enhancing the product's durability and longevity.

Transistor Element Material:

SILICON CARBIDE - Provides superior performance and reliability compared to traditional materials, making it ideal for demanding applications.

Minimum Operating Temperature:

40 °C - Ensures reliable operation in low-temperature conditions, suitable for a wide range of operating environments.

Maximum Drain-Source On Resistance:

0.0279 ohm - Offers low resistance for efficient power transfer, minimizing energy loss and improving overall system efficiency.

Terminal Position:

UPPER - Facilitates easy connection and integration into circuit layouts, ensuring convenient installation and maintenance.

Case Connection:

ISOLATED - Enhances safety and protection by isolating the transistor case from electrical components, reducing the risk of short circuits.

Maximum Feedback Capacitance (Crss):

16 pF - Provides stable performance during switching operations, improving reliability and reducing interference in sensitive circuits.

Reference Standard:

IEC-60747-8-4 - Complies with industry standards for quality and performance, ensuring compatibility and reliability in diverse applications.

Technical Specifications

Power Field Effect Transistors (FET) CCB021M12FM3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Wolfspeed

Specs

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

1200 V

Maximum Drain-Source On Resistance:

.0279 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

16 pF

JESD-30 Code:

R-XUFM-X22

No. of Elements:

6

No. of Terminals:

22

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

106 A

Reference Standard:

IEC-60747-8-4

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON CARBIDE

Trade Compliance

CCB021M12FM3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Wolfspeed

At Wolfspeed, we harness the power of Silicon Carbide to change the world for better. Our company represents more than 35 years of innovation, first as Cree, then as Cree | Wolfspeed, and now as Wolfspeed. Our Wolfspeed name is synonymous with Silicon Carbide leadership as we continue leading the charge into the future of innovation and manufacturing. We have assembled the best semiconductor team in the industry – a team that is uniquely suited to lead an industry-transforming, once-in-a-generation technology shift. We are the only player in the semiconductor industry with a fully commercialized, broad portfolio of the most field-tested Silicon Carbide and GaN-on-Silicon Carbide solutions on the market. Our ever-increasing portfolio of Wolfspeed products are engineered to enable our customers to deliver groundbreaking systems that do more while using energy more efficiently. We make a difference every day as we partner with our customers to create a more sustainable future for all – one powered by Silicon Carbide and our team’s passion and perseverance.

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