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Wolfspeed Power Field Effect Transistors (FET) 15

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
CCS050M12CM2 by Wolfspeed

CCS050M12CM2

Wolfspeed

Wolfspeed's CCS050M12CM2 is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for switching applications. Featuring 6 elements in a rectangular package style, it offers 250A max pulsed drain current and 0.036 ohm max RDS(on). Operating in enhancement mode at -40°C, this MOSFET uses silicon carbide technology and meets IEC-60747-8-4 standards.

ISOLATED

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

1200 V

87 A

.036 ohm

METAL-OXIDE SEMICONDUCTOR

R-XUFM-X28

6

28

ENHANCEMENT MODE

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

250 A

IEC-60747-8-4

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SWITCHING

SILICON CARBIDE

C2M0025120D by Wolfspeed

C2M0025120D

Wolfspeed

Wolfspeed C2M0025120D is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for switching applications. Features include 250A max pulsed drain current, 0.034 ohm max RDS(on), and -55 to 150°C operating temperature range. Suitable for high-power systems requiring efficient and reliable performance.

DRAIN

SINGLE WITH BUILT-IN DIODE

1200 V

90 A

.034 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 A

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON CARBIDE

CAS300M12BM2 by Wolfspeed

CAS300M12BM2

Wolfspeed

CAS300M12BM2 by Wolfspeed is a N-CHANNEL FET with 1200V DS breakdown voltage. It features 2 elements with built-in diode for switching applications. Operating in enhancement mode, it has a max pulsed drain current of 1500A and 0.0567 ohm drain-source on resistance.

ISOLATED

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

1200 V

.0567 ohm

METAL-OXIDE SEMICONDUCTOR

113 pF

R-XUFM-X7

2

7

ENHANCEMENT MODE

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

1500 A

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SWITCHING

SILICON CARBIDE

CAS300M17BM2 by Wolfspeed

CAS300M17BM2

Wolfspeed

CAS300M17BM2 by Wolfspeed is a N-CHANNEL Power FET with 2 SERIES CONNECTED elements. Operating in ENHANCEMENT MODE, it features SILICON CARBIDE technology and a RECTANGULAR package. Ideal for high-power applications requiring efficiency and reliability.

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

METAL-OXIDE SEMICONDUCTOR

R-XUFM-X7

2

7

ENHANCEMENT MODE

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON CARBIDE

C2M0080170P by Wolfspeed

C2M0080170P

Wolfspeed

C2M0080170P by Wolfspeed is a N-CHANNEL Power FET with 1700V DS Breakdown Voltage. It has a max IDM of 80A, 0.125 ohm RDS(on), and is used for SWITCHING applications. The transistor features a SINGLE configuration with BUILT-IN DIODE in a RECTANGULAR package style suitable for FLANGE MOUNTing.

DRAIN

SINGLE WITH BUILT-IN DIODE

1700 V

40 A

.125 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T4

1

4

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

80 A

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

C3M0060065K by Wolfspeed

C3M0060065K

Wolfspeed

C3M0060065K by Wolfspeed is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. It has a max IDM of 99A and 0.079 ohm Drain-Source On Resistance. Ideal for SWITCHING applications, this transistor operates in ENHANCEMENT MODE with a max power dissipation of 150W at temperatures ranging from -40 to 175 °C.

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

37 A

.079 ohm

METAL-OXIDE SEMICONDUCTOR

9 pF

TO-247

R-PSFM-T4

1

4

ENHANCEMENT MODE

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

150 W

99 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON CARBIDE

CAS120M12BM2 by Wolfspeed

CAS120M12BM2

Wolfspeed

CAS120M12BM2 by Wolfspeed is a N-CHANNEL FET with 1200V DS breakdown voltage. It features 2 elements in series, each with built-in diode, suitable for switching applications. With 0.016 ohm RDS(on) and 480A IDM, it operates in -40 to 150 °C temperature range.

ISOLATED

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

1200 V

.016 ohm

METAL-OXIDE SEMICONDUCTOR

43.8 pF

R-XUFM-X7

2

7

ENHANCEMENT MODE

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

480 A

NO

UNSPECIFIED

UPPER

SWITCHING

SILICON CARBIDE

CAB760M12HM3 by Wolfspeed

CAB760M12HM3

Wolfspeed

Wolfspeed's CAB760M12HM3 is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for switching applications. Features include 2 elements with built-in diode and thermistor, max pulsed drain current of 1530A, and 0.00173 ohm max drain-source on resistance. Operates in enhancement mode at -40 to 175°C temperature range.

ISOLATED

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

1200 V

.00173 ohm

METAL-OXIDE SEMICONDUCTOR

90 pF

R-XUFM-X9

2

9

ENHANCEMENT MODE

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

1530 A

NO

UNSPECIFIED

UPPER

SWITCHING

SILICON CARBIDE

C3M0045065K by Wolfspeed

C3M0045065K

Wolfspeed

C3M0045065K by Wolfspeed is a N-CHANNEL FET with 650V DS breakdown voltage and 132A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode, 0.06 ohm max RDS(on), and operates in ENHANCEMENT MODE.

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

49 A

.06 ohm

METAL-OXIDE SEMICONDUCTOR

8 pF

R-PSFM-T4

1

4

ENHANCEMENT MODE

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

176 W

132 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON CARBIDE

C3M0025065K by Wolfspeed

C3M0025065K

Wolfspeed

C3M0025065K by Wolfspeed is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. It features a max IDM of 251A, 0.034 ohm Drain-Source On Resistance, and 326W Power Dissipation. Ideal for SWITCHING applications, this SILICON CARBIDE MOSFET operates in ENHANCEMENT MODE at temperatures ranging from -40 to 175 °C.

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

97 A

.034 ohm

METAL-OXIDE SEMICONDUCTOR

12 pF

R-PSFM-T4

1

4

ENHANCEMENT MODE

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

326 W

251 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON CARBIDE

CAB011M12FM3 by Wolfspeed

CAB011M12FM3

Wolfspeed

Wolfspeed's CAB011M12FM3 is a N-CHANNEL FET with 1200V DS Breakdown Voltage, 0.014 ohm RDS(on), and 218A IDM. Ideal for SWITCHING applications, it features SERIES CONNECTED configuration with 2 elements, built-in diode, and thermistor. Operating in ENHANCEMENT MODE, this FET has a max temp of 150°C and uses SILICON CARBIDE technology.

ISOLATED

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

1200 V

.014 ohm

METAL-OXIDE SEMICONDUCTOR

30 pF

R-XUFM-X9

2

9

ENHANCEMENT MODE

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

218 A

NO

UNSPECIFIED

UPPER

SWITCHING

SILICON CARBIDE

CCB021M12FM3 by Wolfspeed

CCB021M12FM3

Wolfspeed

Wolfspeed CCB021M12FM3 is a N-CHANNEL FET with 1200V DS breakdown voltage, 106A IDM, and 0.0279 ohm RDS(on). Ideal for switching applications, it features a bridge configuration with 6 elements, built-in diode and thermistor. Operating in enhancement mode, it uses silicon carbide technology and can withstand temperatures from -40 to 150 °C.

ISOLATED

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

1200 V

.0279 ohm

METAL-OXIDE SEMICONDUCTOR

16 pF

R-XUFM-X22

6

22

ENHANCEMENT MODE

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

106 A

IEC-60747-8-4

NO

UNSPECIFIED

UPPER

SWITCHING

SILICON CARBIDE

CAB530M12BM3 by Wolfspeed

CAB530M12BM3

Wolfspeed

Wolfspeed's CAB530M12BM3 is a N-CHANNEL FET with 1200V DS breakdown voltage, 1060A IDM, and 0.00355 ohm RDS. Ideal for switching applications, it features SERIES CONNECTED configuration with 2 elements and built-in diode. Operating in enhancement mode, this FET has a max operating temperature of 150°C and min of -40°C.

ISOLATED

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

1200 V

.00355 ohm

METAL-OXIDE SEMICONDUCTOR

84 pF

R-XUFM-X7

2

7

ENHANCEMENT MODE

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

1060 A

NO

UNSPECIFIED

UPPER

SWITCHING

SILICON CARBIDE

C3M0075120D-A by Wolfspeed

C3M0075120D-A

Wolfspeed

C3M0075120D-A by Wolfspeed is a N-CHANNEL Power FET with 1200V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a max IDM of 80A and 0.09 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, this SILICON CARBIDE transistor has a max temp of 175 °C and package style FLANGE MOUNT.

DRAIN

SINGLE WITH BUILT-IN DIODE

1200 V

32 A

.09 ohm

METAL-OXIDE SEMICONDUCTOR

2 pF

TO-247

R-PSFM-T3

1

3

ENHANCEMENT MODE

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

136 W

80 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON CARBIDE

WAS530M12BM3 by Wolfspeed

WAS530M12BM3

Wolfspeed

Power Field-Effect Transistors;