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CCS050M12CM2

Wolfspeed

CCS050M12CM2 by Wolfspeed

Wolfspeed's CCS050M12CM2 is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for switching applications. Featuring 6 elements in a rectangular package style, it offers 250A max pulsed drain current and 0.036 ohm max RDS(on). Operating in enhancement mode at -40°C, this MOSFET uses silicon carbide technology and meets IEC-60747-8-4 standards.

Median Price

$519.500

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Farnell

UK . 152 parts In-Stock

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$402.300

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$402.300

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Verical

USA . 18 parts In-Stock

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$514.000

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Chip1Stop

Japan . 18 parts In-Stock

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$525.000

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$421.000

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$525.000

$421.000

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Element14

Singapore . 13 parts In-Stock

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$761.650

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13

$761.650

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Nova Conductors

Japan . 100 parts In-Stock

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$561.924

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Vyrian

USA . 7,202 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 399 parts In-Stock

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$1.120

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AZTECH Wire

Italy . 580 parts In-Stock

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$5.480

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$5.480

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Semicontronic

India . 39 parts In-Stock

1+ parts

$258.560

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$252.096

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$250.803

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39

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$250.803

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Continental Prestige Electronics

USA . 3,775 parts In-Stock

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$561.924

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$550.686

3,775

$561.924

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$550.686

Netroflash

USA . 2,000 parts In-Stock

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$561.924

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$550.686

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$561.924

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Argo Parts USA

USA . 1,414 parts In-Stock

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$561.924

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$556.305

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$550.686

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$545.066

1,414

$561.924

$556.305

$550.686

$545.066

Microchip USA

USA . 4,514 parts In-Stock

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$637.285

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Cyclops Electronics Ltd (Excess)

UK . 2 parts In-Stock

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Overview

Experience the power of innovation with Wolfspeed's CCS050M12CM2 Power Field Effect Transistor. Made with cutting-edge technology and superior quality materials like silicon carbide, this N-CHANNEL transistor offers enhanced performance for switching applications. With a minimum DS Breakdown Voltage of 1200V and a Maximum Pulsed Drain Current of 250A, this transistor delivers reliability and efficiency. Whether you're in the automotive, industrial, or renewable energy industry, this product provides the value and benefits you need to take your projects to the next level. Trust Wolfspeed for top-of-the-line solutions that drive success.

Feature Benefit Bullets

Polarity or Channel Type

N-channel FETs typically have lower on-resistance and higher current capabilities compared to P-channel FETs, making them more efficient for certain applications.

Configuration

This complex configuration allows for advanced functionality and protection features in the circuit, making it ideal for high-performance applications.

Transistor Application

Designed specifically for switching applications, ensuring fast and efficient performance in controlling current flow.

Minimum DS Breakdown Voltage

High breakdown voltage provides excellent reliability and protection against voltage spikes in the circuit.

Package Shape

Rectangular packages are typically more compact and easier to mount on circuit boards, saving space and simplifying assembly.

Operating Mode

Enhancement mode FETs require a positive voltage to turn on, offering better control and flexibility in circuit design.

Maximum Pulsed Drain Current (IDM)

High pulsed drain current capability allows for handling sudden spikes in current, making it suitable for demanding applications.

No. of Terminals

More terminals allow for additional connections and features in the circuit, enhancing functionality and versatility.

Field Effect Transistor Technology

Metal-oxide semiconductor technology offers high efficiency and reliability in power switching applications.

Transistor Element Material

Silicon carbide provides excellent thermal conductivity and high-temperature resistance, ensuring stable performance in demanding environments.

Maximum Drain-Source On Resistance

Low on-resistance results in minimal power loss and efficient operation of the transistor.

Terminal Position

Upper terminal position may offer better heat dissipation and easier connection to other components in the circuit.

Reference Standard

Compliance with industry standards ensures compatibility and quality assurance in product performance.

Technical Specifications

Power Field Effect Transistors (FET) CCS050M12CM2 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Wolfspeed

Specs

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

1200 V

Maximum Drain Current (ID):

87 A

Maximum Drain-Source On Resistance:

.036 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-XUFM-X28

No. of Elements:

6

No. of Terminals:

28

Operating Mode:

ENHANCEMENT MODE

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

250 A

Reference Standard:

IEC-60747-8-4

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON CARBIDE

Trade Compliance

CCS050M12CM2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Wolfspeed

At Wolfspeed, we harness the power of Silicon Carbide to change the world for better. Our company represents more than 35 years of innovation, first as Cree, then as Cree | Wolfspeed, and now as Wolfspeed. Our Wolfspeed name is synonymous with Silicon Carbide leadership as we continue leading the charge into the future of innovation and manufacturing. We have assembled the best semiconductor team in the industry – a team that is uniquely suited to lead an industry-transforming, once-in-a-generation technology shift. We are the only player in the semiconductor industry with a fully commercialized, broad portfolio of the most field-tested Silicon Carbide and GaN-on-Silicon Carbide solutions on the market. Our ever-increasing portfolio of Wolfspeed products are engineered to enable our customers to deliver groundbreaking systems that do more while using energy more efficiently. We make a difference every day as we partner with our customers to create a more sustainable future for all – one powered by Silicon Carbide and our team’s passion and perseverance.

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