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CAB760M12HM3

Wolfspeed

CAB760M12HM3 by Wolfspeed

Wolfspeed's CAB760M12HM3 is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for switching applications. Features include 2 elements with built-in diode and thermistor, max pulsed drain current of 1530A, and 0.00173 ohm max drain-source on resistance. Operates in enhancement mode at -40 to 175°C temperature range.

Median Price

$2,748.750

Lifecycle Status

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1k+

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Chip1Stop

Japan . 3 parts In-Stock

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$2,610.000

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Mouser Electronics

USA . 20 parts In-Stock

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$2,748.560

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DigiKey

USA . 29 parts In-Stock

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Verical

USA . 70 parts In-Stock

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$3,452.028

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Richardson RFPD

USA . 80 parts In-Stock

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$2,876.690

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Nova Conductors

Japan . 150 parts In-Stock

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$2,824.285

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Vyrian

USA . 3,541 parts In-Stock

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Right Parts Inc.

USA . 2,856 parts In-Stock

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ComSIT Distribution GmbH

Germany . 1,500 parts In-Stock

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Microchip USA

USA . 1,790 parts In-Stock

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$1.000

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$1.000

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$1.000

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$1.000

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AZTECH Wire

Italy . 443 parts In-Stock

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$9.089

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Argo Parts USA

USA . 4,953 parts In-Stock

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$2,824.285

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$2,796.042

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$2,767.799

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$2,739.556

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$2,767.799

$2,739.556

Continental Prestige Electronics

USA . 3,213 parts In-Stock

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$2,824.285

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Netroflash

USA . 2,000 parts In-Stock

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$2,824.285

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Overview

Wolfspeed's CAB760M12HM3 Power FET is a game-changer in the world of switching applications. With its innovative design and top-notch quality, this N-CHANNEL FET offers unparalleled performance and reliability. Whether you're looking to enhance your power systems or optimize your industrial processes, this FET is the perfect solution. Say goodbye to inefficiency and hello to seamless operation with the CAB760M12HM3 by Wolfspeed. Upgrade today and experience the difference for yourself!

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL FETs typically have lower on-resistance and higher current handling capabilities compared to P-CHANNEL FETs, making them suitable for high power applications.

Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

This configuration allows for efficient switching and provides additional protection features with the built-in diode and thermistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable and fast operation in various power circuits.

Maximum Pulsed Drain Current (IDM): 1530 A

High maximum pulsed drain current capability allows for handling large current spikes without damage, providing robust performance.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this FET can withstand elevated temperatures and operate reliably in demanding environments.

Transistor Element Material: SILICON CARBIDE

Silicon carbide offers superior thermal conductivity and high breakdown voltage, making this FET suitable for high power and high frequency applications.

Technical Specifications

Power Field Effect Transistors (FET) CAB760M12HM3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Wolfspeed

Specs

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

1200 V

Maximum Drain-Source On Resistance:

.00173 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

90 pF

JESD-30 Code:

R-XUFM-X9

No. of Elements:

2

No. of Terminals:

9

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

1530 A

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON CARBIDE

Trade Compliance

CAB760M12HM3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Wolfspeed

At Wolfspeed, we harness the power of Silicon Carbide to change the world for better. Our company represents more than 35 years of innovation, first as Cree, then as Cree | Wolfspeed, and now as Wolfspeed. Our Wolfspeed name is synonymous with Silicon Carbide leadership as we continue leading the charge into the future of innovation and manufacturing. We have assembled the best semiconductor team in the industry – a team that is uniquely suited to lead an industry-transforming, once-in-a-generation technology shift. We are the only player in the semiconductor industry with a fully commercialized, broad portfolio of the most field-tested Silicon Carbide and GaN-on-Silicon Carbide solutions on the market. Our ever-increasing portfolio of Wolfspeed products are engineered to enable our customers to deliver groundbreaking systems that do more while using energy more efficiently. We make a difference every day as we partner with our customers to create a more sustainable future for all – one powered by Silicon Carbide and our team’s passion and perseverance.

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