Loading...

STW43NM60ND

STMicroelectronics

STW43NM60ND by STMicroelectronics

STW43NM60ND from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 140A pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.

Median Price

$7.088

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Freelance Electronics

USA . 52 parts In-Stock

1+ parts

$10.137

100+ parts

$10.644

1k+ parts

$10.035

10k+ parts

-

52

$10.137

$10.644

$10.035

-

Vyrian

USA . 8,458 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,458

-

-

-

-

Anansix

USA . 2,626 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,626

-

-

-

-

Digiode

USA . 1,395 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,395

-

-

-

-

TME

Poland . 1,200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$4.040

10k+ parts

-

1,200

-

-

$4.040

-

Chip Stock

USA . 888 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

888

-

-

-

-

Cyclops Electronics Ltd

UK . 60 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

60

-

-

-

-

Semi Source

USA . 30 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

30

-

-

-

-

Electronics Depot

USA . 3 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3

-

-

-

-

NexGen Digital

USA . 2 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,818 parts In-Stock

1+ parts

$0.290

100+ parts

-

1k+ parts

$0.261

10k+ parts

-

1,818

$0.290

-

$0.261

-

MKK Technologies

India . 523 parts In-Stock

1+ parts

$0.545

100+ parts

-

1k+ parts

-

10k+ parts

-

523

$0.545

-

-

-

DigiPath Technology Company

USA . 523 parts In-Stock

1+ parts

$0.545

100+ parts

-

1k+ parts

-

10k+ parts

-

523

$0.545

-

-

-

Andel Nordic

Denmark . 358 parts In-Stock

1+ parts

$6.328

100+ parts

-

1k+ parts

$6.075

10k+ parts

$6.075

358

$6.328

-

$6.075

$6.075

Component Stockers USA

USA . 2,342 parts In-Stock

1+ parts

$7.640

100+ parts

$11.770

1k+ parts

$11.400

10k+ parts

-

2,342

$7.640

$11.770

$11.400

-

AZTECH Wire

Italy . 873 parts In-Stock

1+ parts

$9.280

100+ parts

-

1k+ parts

-

10k+ parts

-

873

$9.280

-

-

-

Kepictronics

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,000

-

-

-

-

A-Z Elektronik GmbH

Germany . 4,758 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,758

-

-

-

-

Alle Elektronik GmbH

Germany . 3,240 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,240

-

-

-

-

Perfect Parts

USA . 2,496 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,496

-

-

-

-

Parana Technologies

USA . 2,266 parts In-Stock

1+ parts

-

100+ parts

$0.346

1k+ parts

-

10k+ parts

-

2,266

-

$0.346

-

-

Corphita

USA . 2,171 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,171

-

-

-

-

Epart123

USA . 60 parts In-Stock

1+ parts

-

100+ parts

$8.250

1k+ parts

-

10k+ parts

-

60

-

$8.250

-

-

iodParts Technologies Inc.

India . 60 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

60

-

-

-

-

GreenTree Electronics

Israel . 60 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

60

-

-

-

-

Overview

Unlock the power of efficiency with the STW43NM60ND from STMicroelectronics. Renowned for exceptional quality, this N-channel power FET is engineered for reliable switching applications, making it ideal for energy-efficient designs in industrial and consumer electronics. Benefit from its robust 600V breakdown voltage and impressive current handling, ensuring optimal performance and durability. Elevate your projects with a trusted manufacturer that prioritizes innovation and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Utilizing plastic/epoxy ensures a lightweight and durable structure, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

The N-channel configuration typically offers better efficiency and performance in switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

This configuration simplifies design and adds protection against reverse polarity, enhancing reliability.

Transistor Application: SWITCHING

Optimized for switching applications, making it ideal for power management and conversion in electronic circuits.

Minimum DS Breakdown Voltage: 600 V

A high breakdown voltage increases the device's capability to handle high-voltage applications, ensuring safety and stability.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient space utilization on PCBs while maintaining ease of soldering.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide enhanced mechanical stability and ease of handling during assembly.

Operating Mode: ENHANCEMENT MODE

Enhanced mode FETs are known for their high-input impedance, leading to lower power consumption.

Maximum Pulsed Drain Current (IDM): 140 A

With a pulsed drain current of 140 A, this FET can handle significant current surges, ideal for demanding applications.

Avalanche Energy Rating (EAS): 1000 mJ

High avalanche energy handling ensures reliable operation during transient events, reducing the risk of damage.

Maximum Drain Current (Abs) (ID): 35 A

A maximum drain current of 35 A guarantees adequate performance in high-power applications.

No. of Terminals: 3

The three-terminal design streamlines circuit configurations while providing necessary functionalities.

Maximum Power Dissipation (Abs): 255 W

High power dissipation capability allows for efficient heat management, promoting longevity in high-load scenarios.

Package Style (Meter): FLANGE MOUNT

Flange mount packaging is suited for enhanced thermal management and ease of installation in various setups.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology contributes to low power consumption and high-speed switching capabilities, making it versatile.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature enhances reliability in extreme conditions, extending the component's application range.

Transistor Element Material: SILICON

Silicon as the element material provides a good balance of performance, cost, and availability.

Terminal Finish: MATTE TIN

Matte tin finish offers excellent solderability and corrosion resistance, improving longevity and performance in circuits.

Maximum Drain Current (ID): 35 A

Redundant specification reinforcing the reliability for handling considerable amounts of drain current efficiently.

Maximum Drain-Source On Resistance: 0.088 ohm

Low on-resistance translates to higher efficiency and less power loss during operation, benefiting performance.

Terminal Position: SINGLE

Single terminal positioning offers straightforward integration and ease of layout in circuit designs.

Technical Specifications

Power Field Effect Transistors (FET) STW43NM60ND attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Avalanche Energy Rating (EAS):

1000 mJ

Minimum DS Breakdown Voltage:

600 V

Maximum Drain Current (Abs) (ID):

35 A

Maximum Drain Current (ID):

35 A

Maximum Drain-Source On Resistance:

.088 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

140 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STW43NM60ND Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19