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STW45NM50FD

STMicroelectronics

STW45NM50FD by STMicroelectronics

STW45NM50FD by STMicroelectronics is a N-CHANNEL Power FET with 500V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 180A IDM and 800mJ EAS. Operating in ENHANCEMENT MODE, it has a max power dissipation of 417W and can handle up to 45A drain current.

Median Price

$9.934

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Forefront Electronics and Design

USA . 1 parts In-Stock

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$9.800

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1

$9.800

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$10.067

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50

$10.067

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Digiode

USA . 3,103 parts In-Stock

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3,103

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Anansix

USA . 2,526 parts In-Stock

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2,526

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Vyrian

USA . 2,282 parts In-Stock

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2,282

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Chip Stock

USA . 133 parts In-Stock

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South Electronics

USA . 8 parts In-Stock

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Resion

USA . 6 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 834 parts In-Stock

1+ parts

$1.084

100+ parts

-

1k+ parts

$0.975

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834

$1.084

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$0.975

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MKK Technologies

India . 775 parts In-Stock

1+ parts

$2.038

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775

$2.038

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DigiPath Technology Company

USA . 775 parts In-Stock

1+ parts

$2.038

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775

$2.038

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Ampacity Inc.

Singapore . 1,392 parts In-Stock

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$10.050

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$10.050

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Continental Prestige Electronics

USA . 3,017 parts In-Stock

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$10.067

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$9.866

3,017

$10.067

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$9.866

Netroflash

USA . 500 parts In-Stock

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$10.067

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$9.564

10k+ parts

$9.362

500

$10.067

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$9.564

$9.362

AZTECH Wire

Italy . 715 parts In-Stock

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$18.561

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$18.561

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Kepictronics

USA . 5,000 parts In-Stock

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Argo Parts USA

USA . 4,800 parts In-Stock

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Authorized Procurement Solutions

USA . 4,500 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,941 parts In-Stock

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RC Electronics

USA . 1,568 parts In-Stock

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Parana Technologies

USA . 1,503 parts In-Stock

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$1.296

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Corphita

USA . 187 parts In-Stock

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187

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Overview

Enhance the performance of your electronic devices with the STW45NM50FD Power Field Effect Transistor by STMicroelectronics. Designed with precision and expertise, this N-CHANNEL transistor offers reliable switching capabilities for various applications. With a high DS breakdown voltage of 500V and maximum drain current of 45A, this product ensures efficient power management. Trust in STMicroelectronics' reputation for quality and innovation while experiencing the value and benefits of using the STW45NM50FD in your projects. Choose excellence, choose STMicroelectronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the internal components of the transistor, making it suitable for various environments.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have better performance characteristics such as lower on-resistance and higher current carrying capability.

Minimum DS Breakdown Voltage: 500 V

With a high breakdown voltage, this transistor can handle higher voltages without breakdown, offering reliability in voltage regulation.

Maximum Pulsed Drain Current (IDM): 180 A

The high pulsed drain current rating indicates that this transistor can handle large current spikes without damage, making it suitable for high-power applications.

Maximum Power Dissipation (Abs): 417 W

This transistor can dissipate a high amount of power without overheating, ensuring stable and reliable operation in demanding conditions.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this transistor can operate in harsh environments without performance degradation, increasing its versatility.

Technical Specifications

Power Field Effect Transistors (FET) STW45NM50FD attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Avalanche Energy Rating (EAS):

800 mJ

Minimum DS Breakdown Voltage:

500 V

Maximum Drain Current (Abs) (ID):

45 A

Maximum Drain Current (ID):

45 A

Maximum Drain-Source On Resistance:

.1 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

180 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STW45NM50FD Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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