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STFW6N120K3

STMicroelectronics

STFW6N120K3 by STMicroelectronics

STFW6N120K3 from STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a 1200V breakdown voltage, 20A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 13,136 parts In-Stock

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Digiode

USA . 2,608 parts In-Stock

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Anansix

USA . 2,013 parts In-Stock

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Bristol Electronics

USA . 30 parts In-Stock

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IDEA Electronic Components Group

UK . 1,942 parts In-Stock

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$1.303

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$1.172

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$1.303

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$1.172

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MKK Technologies

India . 1,502 parts In-Stock

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$2.450

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$2.450

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DigiPath Technology Company

USA . 1,502 parts In-Stock

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$2.450

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$2.450

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AZTECH Wire

Italy . 954 parts In-Stock

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$15.620

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954

$15.620

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Component Stockers USA

USA . 210 parts In-Stock

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$99.990

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A-Z Elektronik GmbH

Germany . 6,573 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,073 parts In-Stock

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Perfect Parts

USA . 1,121 parts In-Stock

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Authorized Procurement Solutions

USA . 900 parts In-Stock

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Parana Technologies

USA . 838 parts In-Stock

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$1.558

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Kepictronics

USA . 440 parts In-Stock

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iodParts Technologies Inc.

India . 350 parts In-Stock

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Corphita

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Overview

Unlock superior performance and reliability with the STFW6N120K3 from STMicroelectronics, a leader in semiconductor innovation. This N-channel power FET excels in high-voltage switching applications, offering exceptional efficiency and durability, making it ideal for industrial and automotive uses. With built-in protection and robust design, it ensures your systems run smoothly, translating to significant cost savings and increased operational lifespan. Choose STMicroelectronics for quality you can trust!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material contributes to lightweight and durable construction, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs generally offer better performance and efficiency in switching applications, making this device advantageous for such uses.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode improves the device's performance in switching applications by providing reverse voltage protection.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can efficiently control power in circuits, increasing reliability.

Minimum DS Breakdown Voltage: 1200 V

A high breakdown voltage ensures that the device can handle high voltage applications safely, enhancing its versatility.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient use of space on PCBs and can simplify integration into various designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals are known for providing robust mechanical stability and ease of soldering, which enhances reliability in assembly.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation typically results in lower power consumption and improved efficiency, making it ideal for energy-sensitive applications.

Maximum Pulsed Drain Current (IDM): 20 A

The ability to handle high pulsed currents allows the transistor to manage transient loads effectively, ensuring performance under dynamic conditions.

Avalanche Energy Rating (EAS): 180 mJ

A substantial avalanche energy rating indicates the capacity to withstand energy spikes, enhancing durability in diverse operating conditions.

Maximum Drain Current (Abs) (ID): 5 A

This absolute current rating allows for reliable operation in various applications without exceeding limits, promoting longevity.

No. of Terminals: 3

Having three terminals makes integration simple and allows for straightforward circuit designs, facilitating easier manufacturing.

Package Style (Meter): FLANGE MOUNT

Flange mounting provides enhanced heat dissipation and stability, making it suitable for high power applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology offers high input impedance and low power loss, which results in greater efficiency and reduced heat generation.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature allows for use in more extreme environments, extending the range of applications.

Transistor Element Material: SILICON

Silicon is a common and highly effective semiconductor material, providing reliable performance and a well-established manufacturing process.

Terminal Finish: MATTE TIN

Matte tin plating improves solderability and corrosion resistance, which enhances the longevity and reliability of connections.

Maximum Drain Current (ID): 6 A

With a maximum drain current of 6 A, this transistor can support various load requirements while maintaining low heat generation.

Maximum Drain-Source On Resistance: 2.4 ohm

A low on-resistance indicates lower power losses and higher efficiency during operation, contributing to overall system performance.

Terminal Position: SINGLE

The single terminal position simplifies circuit design and contributes to a compact overall layout in electronic devices.

Case Connection: ISOLATED

Isolated case connections enhance safety by preventing unintended electrical contact, making this device safer to use in sensitive circuits.

Technical Specifications

Power Field Effect Transistors (FET) STFW6N120K3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Avalanche Energy Rating (EAS):

180 mJ

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

1200 V

Maximum Drain Current (Abs) (ID):

5 A

Maximum Drain Current (ID):

6 A

Maximum Drain-Source On Resistance:

2.4 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

20 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STFW6N120K3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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