Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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ST26025A
STMicroelectronics
ST26025A by STMicroelectronics is a PNP BJT with Darlington configuration, ideal for switching applications. It offers a max power dissipation of 160W, hFE of 200, and max collector current of 20A. With a max operating temp of 200 °C and VCE of 100V, it's suitable for high-power electronic systems.
BUILT IN BIAS RESISTANCE RATIO IS 0.01
COLLECTOR
20 A
100 V
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
200
O-MBFM-P2
e3
1
2
200 Cel
METAL
ROUND
FLANGE MOUNT
PNP
160 W
Other Transistors
NO
Matte Tin (Sn)
PIN/PEG
BOTTOM
SWITCHING
SILICON
SGS112
STMicroelectronics' SGS112 is a NPN BJT transistor with Darlington configuration, ideal for switching applications. It features a max VCEsat of 2.5V and can handle up to 50W power dissipation. With a min hFE of 500, it operates at temperatures up to 150 °C, making it suitable for various electronic devices.
ISOLATED
2 A
500
R-PSFM-T3
e0
3
150 Cel
PLASTIC/EPOXY
RECTANGULAR
NPN
50 W
Not Qualified
TIN LEAD
THROUGH-HOLE
SINGLE
2.5 V
BDX53BFP
BDX53BFP by STMicroelectronics is a power bipolar junction transistor (BJT) with NPN polarity. It has a max VCEsat of 2V and can handle a max collector current (IC) of 8A. This transistor is commonly used for switching applications.
8 A
80 V
750
29 W
25 W
MATTE TIN
2 V
SGSD100
STMicroelectronics SGSD100 is a NPN BJT with Darlington configuration, built-in diode and resistor. Ideal for switching applications with max VCEsat of 3.5V, hFE of 300, and IC of 25A. Operates up to 150 °C, with max power dissipation of 130W in a rectangular package suitable for flange mount.
25 A
300
TO-247
130 W
TIN
3.5 V
SGSD200
SGSD200 by STMicroelectronics is a PNP BJT transistor with Darlington configuration, ideal for switching applications. It features a max VCEsat of 3.5V, hFE of 300, and can handle up to 25A collector current. With a max power dissipation of 130W and operating temperature of 150 °C, it is suitable for high-power electronic circuits.
TIP122FP
TIP122FP by STMicroelectronics is a NPN power BJT with 100V VCEO, 5A IC, and 2W Ptot. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor. The transistor operates up to 150°C and comes in a rectangular package with through-hole terminals.
5 A
1000
TO-220AB
2 W
BU808DFI
BU808DFI by STMicroelectronics is an NPN Darlington BJT designed for switching applications. It features a max VCEsat of 1.6V, supports up to 8A collector current, and operates at temperatures up to 150 °C. Ideal for high-power circuits with efficient thermal management.
700 V
60
TO-218
NOT SPECIFIED
52 W
3800 ns
1.6 V
BU941ZTFP
BU941ZTFP by STMicroelectronics is a NPN Power BJT with 55W power dissipation, ideal for amplifier applications. Featuring a Darlington configuration, it has a max collector-emitter voltage of 350V and max collector current of 15A. The package style is flange mount with matte tin terminal finish.
15 A
350 V
175 Cel
55 W
AMPLIFIER
BU941ZT
STMicroelectronics' BU941ZT is a NPN BJT with Darlington configuration, ideal for switching applications. It features 2V VCEsat, 150W power dissipation, and 15A collector current. With a max voltage of 350V and operating temperature of 175°C, it's suitable for high-power tasks in various industries.
180 W
150 W
BUB941ZT
STMicroelectronics BUB941ZT is a NPN Darlington transistor with built-in diode and resistor, ideal for amplifier applications. It features a max VCEsat of 1.8V, 150W power dissipation, and can handle up to 15A collector current. The package style is small outline with gull wing terminals for surface mount assembly.
TO-263AB
R-PSSO-G2
SMALL OUTLINE
245
YES
Matte Tin (Sn) - annealed
GULL WING
30
1.8 V
NTE2349
Nte Electronics
NTE2349 by Nte Electronics is a NPN Power BJT with 300W power dissipation, 120V max collector-emitter voltage, and 50A max collector current. Ideal for high-power applications requiring Darlington configuration with built-in diode and resistor in a round package shape.
50 A
120 V
400
TO-3
300 W
NTE243
NTE243 by Nte Electronics is a NPN BJT with Darlington configuration, ideal for amplifier applications. With max power dissipation of 100W (abs) and 150W (ambient), it offers hFE of min 100. Featuring VCE of 80V and IC of 8A, this silicon transistor has a round package shape for flange mount.
100
100 W
NTE247
NTE247 by Nte Electronics is a NPN BJT with Darlington configuration, ideal for amplifier applications. With 150W max power dissipation and 100V max collector-emitter voltage, it offers high performance. Featuring built-in diode and resistor, this transistor has 12A max collector current.
12 A
NTE248
NTE248 by Nte Electronics is a PNP BJT with 150W power dissipation, 100V max collector-emitter voltage, and 12A max collector current. Ideal for amplifier applications due to its Darlington configuration with built-in diode and resistor. Package style is flange mount with round shape and metal body material.
STX112-AP
STX112-AP by STMicroelectronics is a high-performance NPN Darlington BJT designed for switching applications. It features a max power dissipation of 1.2W, a min DC current gain (hFE) of 500, and operates up to 150 °C. Its cylindrical package ensures efficient thermal management.
BUILT IN BIAS RESISTANCE RATIO IS 0.0067
TO-92
O-PBCY-W3
CYLINDRICAL
1.2 W
WIRE
STX112
STX112 by STMicroelectronics is a powerful NPN Darlington BJT designed for switching applications. It features a max power dissipation of 1.2W, a collector current of 2A, and operates up to 150 °C. Its cylindrical package ensures efficient thermal management in various electronic devices.
O-PBCY-T3
MJD117RLG
Onsemi
MJD117RLG by Onsemi is a PNP power bipolar junction transistor (BJT) with a max collector-emitter voltage of 100V and a max collector current of 2A. It is designed for switching applications and has a min DC current gain of 200 (hFE).
260
20 W
25 MHz
BUB323ZT4
BUB323ZT4 by Onsemi is a NPN power BJT with Darlington configuration, ideal for switching applications. It features a max collector-emitter voltage of 350V, collector current of 10A, and power dissipation of 150W. With a transition frequency of 2MHz, it is suitable for high-power electronic circuits in various industries.
10 A
235
Tin/Lead (Sn/Pb)
2 MHz
BUB323Z
BUB323Z by Onsemi is a NPN BJT with Darlington configuration, ideal for switching applications. It has a max power dissipation of 150W, hFE of 500, and VCE of 350V. With a small outline package style and surface mount capability, it operates b/w -65 to 175 °C for various electronic designs.
-65 Cel
BD682T
BD682T by Onsemi is a PNP BJT transistor with 40W power dissipation, 4A collector current, and 10MHz transition frequency. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a rectangular package with through-hole terminals.
4 A
TO-225AA
40 W
10 MHz
TIP142TU
Fairchild Semiconductor
TIP142TU by Fairchild Semiconductor is a NPN power BJT with Darlington configuration, 125W power dissipation, and 10A collector current. Ideal for high-power applications requiring a max collector-emitter voltage of 100V and min DC current gain of 500 hFE. Commonly used in flange mount setups due to its rectangular package shape.
125 W
MJD112RL
MJD112RL by Onsemi is a NPN BJT with Darlington configuration, built-in diode and resistor. It has a max power dissipation of 20W, hFE of 200, and operates up to 150 °C. Ideal for switching applications due to its high collector current of 2A and max voltage of 100V.
BD676G
BD676G by Onsemi is a PNP power BJT with 40W max power dissipation, ideal for amplifier applications. Featuring a Darlington configuration with built-in diode and resistor, it offers a min hFE of 750. With a max collector current of 4A and operating temperature of 150 °C, this transistor is designed for high-performance in various electronic circuits.
45 V
BDW47G
BDW47G by Onsemi is a PNP power BJT with 85W max power dissipation, 100V max collector-emitter voltage, and 15A max collector current. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor in a rectangular package with through-hole terminals. Operating up to 150°C, this transistor has a min hFE of 250 and fT of 4MHz.
250
85 W
4 MHz
BD679AG
BD679AG by Onsemi is a NPN Power BJT with 40W power dissipation, 750 min hFE, and 80V VCE. Ideal for amplifier applications due to its Darlington configuration with built-in diode and resistor. Package style is flange mount with through-hole terminals.
MJE800G
MJE800G by Onsemi is a NPN power BJT with 40W Pd, 750 hFE, and 60V Vce. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a rectangular package with through-hole terminals. Operating up to 150°C, it has a max collector current of 4A and transition frequency of 1MHz.
BUILT IN BIAS RESISTOR
60 V
TO-225
1 MHz
TIP111G
TIP111G by Onsemi is a NPN BJT with Darlington configuration, ideal for amplifier applications. It features 50W power dissipation, 80V max collector-emitter voltage, and 2A max collector current. The package is rectangular with through-hole terminals and can operate up to 150°C.
TIP125G
TIP125G by Onsemi is a PNP power BJT with 65W max power dissipation, ideal for amplifier applications. Featuring a Darlington configuration with built-in diode and resistor, it has a hFE of 1000 and can handle up to 5A collector current. With a max operating temperature of 150°C and collector-emitter voltage of 60V, this transistor is suitable for various electronic projects.
65 W
STX117-AP
STX117-AP by STMicroelectronics is a PNP Darlington BJT designed for efficient switching applications. It features a max power dissipation of 1.2W, a min DC current gain (hFE) of 500, and operates up to 150 °C. Its cylindrical package ensures reliable performance in various electronic circuits.
2STBN15D100T4
2STBN15D100T4 by STMicroelectronics is a NPN Power BJT with Darlington configuration, ideal for switching applications. It has a max collector-emitter voltage of 100V, max collector current of 12A, and min DC current gain of 750. This transistor comes in a small outline package with gull wing terminals, suitable for surface mount assembly.
70 W
2N6667G
2N6667G by Onsemi is a PNP BJT with 10A IC, 60V VCE, and 2W power dissipation. Ideal for amplifier applications due to its Darlington configuration with built-in diode and resistor. Operates up to 150 °C with hFE of at least 100, making it suitable for high-power tasks.
MJF127G
The Onsemi MJF127G is a PNP Power BJT with Darlington configuration, built-in diode, and resistor. It has a max power dissipation of 30W and can handle up to 5A collector current. Ideal for switching applications in various industries due to its high DC current gain of 2000.
2000
30 W
UL RECOGNIZED
BUB323ZG
BUB323ZG by Onsemi is a NPN Power BJT with Darlington configuration, ideal for switching applications. With a max power dissipation of 150W and max collector-emitter voltage of 350V, it operates b/w -65 to 175°C. This surface-mount transistor has a min DC current gain of 500 and can handle up to 10A collector current.
2N6035G
The Onsemi 2N6035G is a PNP power BJT with a max collector current of 4A and a min DC current gain of 100. It has a max operating temperature of 150 °C, making it suitable for amplifier applications. The transistor features a Darlington configuration with built-in diode and resistor, housed in a plastic/epoxy package with matte tin terminal finish.
1.5 W
2N6036G
2N6036G by Onsemi is a PNP power BJT with Darlington configuration, ideal for amplifier applications. It features a max collector-emitter voltage of 80V, max collector current of 4A, and min DC current gain of 100. With a package style of flange mount and operating temp up to 150 °C, it offers high performance in various electronic designs.
2N6039G
2N6039G by Onsemi is a NPN Power BJT with Darlington configuration, ideal for amplifier applications. It features a max collector-emitter voltage of 80V, max collector current of 4A, and min DC current gain of 100. With a package style of flange mount and operating temp up to 150 °C, it offers high performance in power applications.
2N6040G
2N6040G by Onsemi is a PNP power BJT with Darlington configuration, built-in diode, and resistor. It has a max collector-emitter voltage of 60V, max current of 8A, and min DC current gain of 1000. Ideal for switching applications due to its high power dissipation of 75W and operating temp up to 150°C.
LEADFORM OPTIONS ARE AVAILABLE
75 W
2N6042G
2N6042G by Onsemi is a PNP BJT with 100V VCEO, 8A IC, and 75W power dissipation. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor. With an hFE of 1000, it operates b/w -65°C to 150°C in a flange mount package.
2N6286G
2N6286G by Onsemi is a PNP power BJT with a max collector current of 20A and a min DC current gain of 100. It features a built-in diode and resistor, making it suitable for amplifier applications. With a max power dissipation of 160W and an operating temperature up to 200 °C, it offers reliable performance in various high-power circuits.
TO-204AA
BD675G
BD675G by Onsemi is a power BJT transistor with NPN polarity. It has a max power dissipation of 40W and a min DC current gain of 750. This transistor is commonly used in amplifier applications.
BD675AG
BD675AG by Onsemi is a NPN power BJT with 40W max power dissipation, ideal for amplifier applications. Featuring a Darlington configuration with built-in diode and resistor, it offers a min hFE of 750. With a max operating temp of 150°C and VCE of 45V, this transistor has IC up to 4A.
BD676AG
BD676AG by Onsemi is a PNP BJT with 40W power dissipation, 750 min hFE, and 45V max collector-emitter voltage. Ideal for amplifier applications due to its Darlington configuration with built-in diode and resistor. Package style is flange mount with through-hole terminals.
BD677AG
BD677AG by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 60V and a max collector current of 4A. With a min DC current gain of 750, it is ideal for amplifier applications. This power transistor comes in a rectangular package style with through-hole terminals.
BD678G
BD678G by Onsemi is a PNP power BJT with Darlington configuration, ideal for amplifier applications. It features a max collector-emitter voltage of 60V, max collector current of 4A, and min DC current gain of 750 (hFE). With a package style of flange mount and terminal form through-hole, it offers high power dissipation up to 40W at a max operating temperature of 150°C.
BD678AG
BD678AG by Onsemi is a PNP power BJT with a max collector current of 4A and min DC current gain of 750. It features a built-in diode and resistor, making it ideal for amplifier applications. With a max operating temperature of 150°C, this transistor is suitable for high-power amplification needs.
BD680AG
The Onsemi BD680AG is a PNP power BJT with Darlington configuration, ideal for amplifier applications. It offers a max collector-emitter voltage of 80V, max collector current of 4A, and min DC current gain of 750. With a max power dissipation of 40W and operating temperature up to 150°C, it is suitable for various high-power electronic designs.
BD682TG
BD682TG by Onsemi is a PNP power BJT with 40W max power dissipation, hFE of 750, and VCE of 100V. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a rectangular package with through-hole terminals.
Tin (Sn)
40
BDW42G
The Onsemi BDW42G is a NPN power BJT with Darlington configuration, ideal for switching applications. It features a max VCEsat of 3V, hFE of 250, and IC of 15A. With a package style of flange mount and operating temperature range from -55 to 150 °C, it offers high performance in various electronic designs.
200 pF
-55 Cel
3 V
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