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3 MHz Power Bipolar Junction Transistors (BJT) 52

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NJVMJD32CG by Onsemi

NJVMJD32CG

Onsemi

NJVMJD32CG by Onsemi is a PNP BJT with 15W power dissipation, 3A collector current, and 150°C max operating temp. Ideal for automotive applications due to AEC-Q101 standard compliance and 3MHz transition frequency.

3 A

SINGLE

10

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

15 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SILICON

3 MHz

NJVMJB41CT4G by Onsemi

NJVMJB41CT4G

Onsemi

NJVMJB41CT4G by Onsemi is a NPN BJT transistor with 100V VCEO, 6A IC, and 65W Ptot. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and high operating temperature range of -65°C to 150°C. Package style is small outline with gull wing terminals for surface mount assembly.

COLLECTOR

6 A

100 V

SINGLE

15

R-PSSO-G2

e3

1

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

65 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

3 MHz

BD438TG by Onsemi

BD438TG

Onsemi

The Onsemi BD438TG is a PNP BJT with max power dissipation of 36W, hFE of 85, and IC of 4A. Ideal for applications requiring high-power amplification in temperature range -55 to 150°C. Suitable for single configuration setups needing reliable performance with fT of 3MHz.

4 A

SINGLE

85

e3

1

150 Cel

-55 Cel

PNP

36 W

Other Transistors

NO

MATTE TIN

3 MHz

BD243CS by Motorola

BD243CS

Motorola

BD243CS by Motorola is a NPN BJT transistor with 100V VCE, 6A IC, and 65W Pd. Ideal for switching applications due to its single configuration and through-hole terminals. With a min hFE of 15 and fT of 3MHz, it offers reliable performance in various electronic circuits.

COLLECTOR

6 A

100 V

SINGLE

15

TO-220AB

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

65 W

Not Qualified

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

TIP41CN by Motorola

TIP41CN

Motorola

TIP41CN by Motorola is a NPN power BJT with 100V VCE, 6A IC, and 65W Pd. Ideal for switching applications, it has hFE of 15 and fT of 3MHz. The transistor comes in a plastic/epoxy package with flange mount style and through-hole terminals.

COLLECTOR

6 A

100 V

SINGLE

15

TO-220AB

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

65 W

Not Qualified

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

TIP42AS by Motorola

TIP42AS

Motorola

Motorola TIP42AS is a PNP BJT transistor with 60V VCE, 6A IC, and 65W power dissipation. Ideal for switching applications due to its single configuration and 3MHz fT. Package style is flange mount with through-hole terminals.

COLLECTOR

6 A

60 V

SINGLE

15

TO-220AB

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

65 W

Not Qualified

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

TIP42CN by Motorola

TIP42CN

Motorola

Motorola's TIP42CN is a PNP power BJT with 100V VCE, 6A IC, and 65W Pd. Ideal for switching applications, it has hFE of 15 and fT of 3MHz. The transistor comes in a plastic/epoxy package with through-hole terminals for easy mounting.

COLLECTOR

6 A

100 V

SINGLE

15

TO-220AB

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

65 W

Not Qualified

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

TIP42G by Onsemi

TIP42G

Onsemi

TIP42G by Onsemi is a PNP BJT transistor with 65W power dissipation, 40V max. collector-emitter voltage, and 6A max. collector current. Ideal for switching applications, it has a min hFE of 15 and operates at up to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.

COLLECTOR

6 A

40 V

SINGLE

15

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

65 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

TIP35CP by STMicroelectronics

TIP35CP

STMicroelectronics

TIP35CP by STMicroelectronics is a NPN Power BJT with 125W power dissipation, 100V max. collector-emitter voltage, and 25A max. collector current. It is used in applications requiring high-power amplification or switching such as audio amplifiers and power supplies due to its robust design and high operating temperature of 150°C.

25 A

100 V

SINGLE

10

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

125 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SILICON

3 MHz

TIP36CP by STMicroelectronics

TIP36CP

STMicroelectronics

TIP36CP by STMicroelectronics is a PNP BJT with 125W power dissipation, 100V max collector-emitter voltage, and 25A max collector current. Ideal for high-power applications requiring a single configuration transistor in a rectangular package with through-hole terminals.

25 A

100 V

SINGLE

10

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

PNP

125 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SILICON

3 MHz

TIP41A-BP by Micro Commercial Components

TIP41A-BP

Micro Commercial Components

TIP41A-BP by Micro Commercial Components is a NPN BJT transistor with max. 60V VCE, 6A IC, and 3MHz fT. Ideal for power applications requiring high DC current gain (hFE) of min. 30. Package style: FLANGE MOUNT in PLASTIC/EPOXY material for through-hole mounting at up to 150°C operating temp.

6 A

60 V

SINGLE

30

TO-220AB

R-PSFM-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

Not Qualified

NO

MATTE TIN

THROUGH-HOLE

SINGLE

10

SILICON

3 MHz

MJB41CT4 by Onsemi

MJB41CT4

Onsemi

MJB41CT4 by Onsemi is a NPN BJT transistor with 100V VCE, 6A IC, and 65W power dissipation. Ideal for switching applications, it has a hFE of 15 and operates up to 150 °C. Its GULL WING terminals make it suitable for surface mount designs in various electronic devices.

COLLECTOR

6 A

100 V

SINGLE

15

R-PSSO-G2

e0

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

65 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

SINGLE

30

SWITCHING

SILICON

3 MHz

MJB41C by Onsemi

MJB41C

Onsemi

MJB41C by Onsemi is a NPN BJT transistor with 65W power dissipation, 100V collector-emitter voltage, and 6A collector current. It is used for switching applications in small outline packages with Gull Wing terminals. Operating at up to 150 °C, it offers a transition frequency of 3MHz for efficient performance.

COLLECTOR

6 A

100 V

SINGLE

15

R-PSSO-G2

e0

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

65 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

SINGLE

30

SWITCHING

SILICON

3 MHz

MJD31CRL by Onsemi

MJD31CRL

Onsemi

MJD31CRL by Onsemi is a NPN BJT transistor with 15W power dissipation, 100V collector-emitter voltage, and 3A collector current. Ideal for amplifier applications, it has a small outline package style and operates up to 140 °C. Suitable for surface mount assembly with Gull Wing terminals.

COLLECTOR

3 A

100 V

SINGLE

10

R-PSSO-G2

e0

1

1

2

140 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

15 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

SINGLE

30

AMPLIFIER

SILICON

3 MHz

MJD32CRL by Onsemi

MJD32CRL

Onsemi

MJD32CRL by Onsemi is a PNP BJT transistor with 100V VCEO, 3A IC, and 15W power dissipation. Ideal for amplifier applications, it has a hFE of 10 and operates up to 140 °C. This Gull Wing package with tin-lead finish is surface mountable and offers a transition frequency of 3MHz.

COLLECTOR

3 A

100 V

SINGLE

10

R-PSSO-G2

e0

1

1

2

140 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

PNP

15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

SINGLE

AMPLIFIER

SILICON

3 MHz

BD437T by Onsemi

BD437T

Onsemi

The Onsemi BD437T is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max power dissipation of 36W and max collector current of 4A. With a min DC current gain of 40, it operates at up to 150 °C, making it suitable for high-power electronic circuits.

4 A

45 V

SINGLE

40

TO-225AA

R-PSFM-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

NPN

36 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

BD238S by Fairchild Semiconductor

BD238S

Fairchild Semiconductor

Fairchild Semiconductor's BD238S is a PNP BJT transistor with 80V VCE, 2A IC, and 25W power dissipation. Ideal for switching applications due to its single configuration and 3MHz fT. The through-hole package with matte tin finish makes it suitable for various electronic designs.

2 A

80 V

SINGLE

25

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

25 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

BDX34BTU by Fairchild Semiconductor

BDX34BTU

Fairchild Semiconductor

Fairchild Semiconductor's BDX34BTU is a PNP Darlington transistor with 70W power dissipation, 80V collector-emitter voltage, and 10A collector current. Ideal for switching applications, it has a min DC current gain of 750 and operates up to 150°C. The package style is flange mount with matte tin terminal finish in a rectangular shape.

10 A

80 V

DARLINGTON

750

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

70 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

BD436T by Onsemi

BD436T

Onsemi

The Onsemi BD436T is a PNP BJT transistor with 3 terminals, ideal for switching applications. It has a max power dissipation of 36W and max collector current of 4A. With a min hFE of 50 and fT of 3MHz, it operates at up to 150 °C, making it suitable for high-power electronic circuits.

4 A

32 V

SINGLE

50

TO-225AA

R-PSFM-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

PNP

36 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

MJD42CRL by Onsemi

MJD42CRL

Onsemi

MJD42CRL by Onsemi is a PNP BJT transistor with 100V VCEO, 6A IC, and 20W power dissipation. Ideal for switching applications in small outline packages, it operates up to 140 °C with a min hFE of 15.

COLLECTOR

6 A

100 V

SINGLE

15

R-PSSO-G2

e0

1

1

2

140 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

PNP

20 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

SINGLE

SWITCHING

SILICON

3 MHz

BD436TG by Onsemi

BD436TG

Onsemi

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 36 W; Maximum Collector Current (IC): 4 A;

4 A

32 V

SINGLE

50

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

PNP

36 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

TIP31C-BP by Micro Commercial Components

TIP31C-BP

Micro Commercial Components

TIP31C-BP by Micro Commercial Components is a NPN BJT transistor with hFE of 25, IC of 3A, and VCE of 100V. Ideal for power applications due to its high operating temp of 150°C and fT of 3MHz. Its through-hole package makes it suitable for various electronic designs.

3 A

100 V

SINGLE

25

TO-220AB

R-PSFM-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

Not Qualified

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

10

SILICON

3 MHz

MJD31C1G by Onsemi

MJD31C1G

Onsemi

The Onsemi MJD31C1G is a NPN BJT transistor with 3 terminals, capable of handling up to 15W power dissipation. With a max collector-emitter voltage of 100V and max collector current of 3A, it's ideal for amplifier applications. Featuring a min DC current gain of 10 and operating temperature up to 150°C, this transistor offers reliable performance in various electronic circuits.

COLLECTOR

3 A

100 V

SINGLE

10

R-PSIP-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

NPN

15 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

30

AMPLIFIER

SILICON

3 MHz

2N4918G by Onsemi

2N4918G

Onsemi

The Onsemi 2N4918G is a PNP power BJT with max. collector-emitter voltage of 40V, max. collector current of 3A, and max. power dissipation of 30W. It is used for switching applications due to its single configuration and through-hole terminal form in a rectangular package style.

3 A

40 V

SINGLE

10

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

30 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

MJD42C1G by Onsemi

MJD42C1G

Onsemi

MJD42C1G by Onsemi is a PNP BJT transistor with 100V VCEO, 6A IC, and 20W power dissipation. Ideal for switching applications, it has a min hFE of 15 and operates up to 150°C. Its through-hole package style makes it suitable for various electronic designs.

COLLECTOR

6 A

100 V

SINGLE

15

R-PSIP-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

PNP

20 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

30

SWITCHING

SILICON

3 MHz

2N4921G by Onsemi

2N4921G

Onsemi

2N4921G by Onsemi is a NPN BJT transistor with max. power dissipation of 30W, max. collector-emitter voltage of 40V, and max. collector current of 3A. It is used for switching applications due to its single configuration and through-hole terminal form in a rectangular package shape.

3 A

40 V

SINGLE

10

TO-225

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

30 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

BD179G by Onsemi

BD179G

Onsemi

The Onsemi BD179G is a NPN BJT transistor with 3 terminals, capable of handling up to 30W power dissipation. With a max collector-emitter voltage of 80V and max current of 3A, it's ideal for amplifier applications. Operating at temperatures up to 150 °C, this silicon-based transistor has a transition frequency of 3MHz.

3 A

80 V

SINGLE

15

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

30 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

3 MHz

BD238G by Onsemi

BD238G

Onsemi

BD238G by Onsemi is a PNP BJT transistor with 80V VCEO, 2A IC, and 25W Ptot. Ideal for amplifier applications, it has hFE of 25, operates b/w -55 to 150 °C, and features a flange mount package style.

2 A

80 V

SINGLE

25

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

PNP

25 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

3 MHz

BD244BG by Onsemi

BD244BG

Onsemi

BD244BG by Onsemi is a PNP BJT transistor with 65W power dissipation, 80V collector-emitter voltage, and 6A collector current. Ideal for switching applications, it has a min hFE of 15 and operates up to 150°C. The through-hole package with flange mount style suits various electronic designs.

LEADFORM OPTIONS ARE AVAILABLE

COLLECTOR

6 A

80 V

SINGLE

15

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

65 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

BD435G by Onsemi

BD435G

Onsemi

The Onsemi BD435G is a NPN Power BJT with 36W power dissipation, ideal for switching applications. Featuring a max collector-emitter voltage of 32V and max collector current of 4A, it operates up to 150°C. With a min hFE of 50 and fT of 3MHz, this transistor is suitable for various electronic circuits.

4 A

32 V

SINGLE

50

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

36 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

BD438G by Onsemi

BD438G

Onsemi

The Onsemi BD438G is a PNP BJT transistor with 3 terminals, capable of handling up to 4A collector current and 36W power dissipation. It operates b/w -55°C to 150°C, making it suitable for switching applications due to its high transition frequency of 3MHz.

4 A

45 V

SINGLE

40

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

36 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

BD440G by Onsemi

BD440G

Onsemi

BD440G by Onsemi is a PNP BJT transistor with 60V VCEO, 4A IC, and 36W power dissipation. Ideal for switching applications, it has a hFE of 25 and operates up to 150 °C. The through-hole package with flange mount suits various electronic designs.

4 A

60 V

SINGLE

25

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

PNP

36 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

BDX33BG by Onsemi

BDX33BG

Onsemi

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 70 W; Maximum Collector Current (IC): 10 A;

LEADFORM OPTIONS ARE AVAILABLE

COLLECTOR

10 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

750

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

70 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

BDX34BG by Onsemi

BDX34BG

Onsemi

BDX34BG by Onsemi is a PNP power BJT with 70W max power dissipation, 10A max collector current, and 150°C max operating temperature. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor. The transistor has a min hFE of 750 and operates at a max VCE of 80V in a rectangular package style suitable for flange mount installations.

LEADFORM OPTIONS ARE AVAILABLE

COLLECTOR

10 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

750

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

70 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

BDX34CG by Onsemi

BDX34CG

Onsemi

BDX34CG by Onsemi is a PNP Power BJT with 70W power dissipation, 10A collector current, and 150°C max operating temp. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor. The transistor has a max collector-emitter voltage of 100V and min DC current gain of 750 hFE.

LEADFORM OPTIONS ARE AVAILABLE

COLLECTOR

10 A

100 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

750

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

70 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

MJ11022G by Onsemi

MJ11022G

Onsemi

MJ11022G by Onsemi is a NPN power BJT with Darlington configuration, ideal for switching applications. With max. collector-emitter voltage of 250V and max. collector current of 15A, it can handle up to 175W power dissipation. Featuring built-in diode and resistor, this transistor operates at temperatures up to 175°C in a round flange mount package.

COLLECTOR

15 A

250 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

100

TO-204AA

O-MBFM-P2

e3

1

2

175 Cel

METAL

ROUND

FLANGE MOUNT

NPN

175 W

Not Qualified

Other Transistors

NO

MATTE TIN

PIN/PEG

BOTTOM

SWITCHING

SILICON

3 MHz

MJB41CG by Onsemi

MJB41CG

Onsemi

MJB41CG by Onsemi is a NPN BJT transistor with 100V VCEO, 6A IC, and 65W Ptot. Ideal for switching applications, it has a small outline package and operates up to 150 °C. With a transition frequency of 3MHz, it's suitable for various power control circuits.

COLLECTOR

6 A

100 V

SINGLE

15

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

65 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

3 MHz

MJH11019G by Onsemi

MJH11019G

Onsemi

The Onsemi MJH11019G is a PNP power BJT with a max collector-emitter voltage of 200V and collector current of 15A. Featuring a Darlington configuration, it has a min DC current gain of 100 and is ideal for switching applications. With a max power dissipation of 150W and operating temperature up to 150°C, this transistor is suitable for high-power electronic circuits.

COLLECTOR

15 A

200 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

100

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

150 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

MJH11020G by Onsemi

MJH11020G

Onsemi

MJH11020G by Onsemi is a power BJT transistor with NPN polarity. It has a max power dissipation of 150W and can handle a max collector current of 15A. This transistor is commonly used for switching applications.

COLLECTOR

15 A

200 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

100

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

150 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

MJH11022G by Onsemi

MJH11022G

Onsemi

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 15 A;

COLLECTOR

15 A

250 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

100

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

150 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

TIP30G by Onsemi

TIP30G

Onsemi

TIP30G by Onsemi is a PNP BJT transistor with 3 terminals, ideal for switching applications. It has a max power dissipation of 30W, max collector-emitter voltage of 40V, and max collector current of 1A. With a min hFE of 15 and operating temp up to 150 °C, it's suitable for various electronic circuits requiring high power handling capabilities.

COLLECTOR

1 A

40 V

SINGLE

15

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

PNP

30 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

TIP33CG by Onsemi

TIP33CG

Onsemi

TIP33CG by Onsemi is a NPN BJT transistor with 80W power dissipation, 100V collector-emitter voltage, and 10A collector current. Ideal for switching applications, it has a min hFE of 20 and operates at up to 150 °C. Its package style is flange mount with matte tin terminal finish.

COLLECTOR

10 A

100 V

SINGLE

20

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

80 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

TIP35AG by Onsemi

TIP35AG

Onsemi

TIP35AG by Onsemi is a NPN Power BJT with 125W power dissipation, 60V max collector-emitter voltage, and 25A max collector current. Ideal for switching applications, it has a single configuration in a rectangular package with through-hole terminals. Operating up to 150°C, it offers a min DC current gain of 15 and nominal transition frequency of 3MHz.

COLLECTOR

25 A

60 V

SINGLE

15

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

125 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

TIP41AG by Onsemi

TIP41AG

Onsemi

TIP41AG by Onsemi is a NPN power BJT with 65W max power dissipation, 60V max collector-emitter voltage, and 6A max collector current. Ideal for switching applications, it has a min hFE of 15 and operates up to 150°C. The transistor comes in a plastic/epoxy package with through-hole terminals.

COLLECTOR

6 A

60 V

SINGLE

15

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

65 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

TIP42AG by Onsemi

TIP42AG

Onsemi

TIP42AG by Onsemi is a PNP BJT transistor with 65W power dissipation, 6A collector current, and 150°C max operating temp. Ideal for switching applications, it has a min hFE of 15 and operates at a max VCE of 60V in a rectangular package with through-hole terminals.

COLLECTOR

6 A

60 V

SINGLE

15

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

65 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

TIP42BG by Onsemi

TIP42BG

Onsemi

TIP42BG by Onsemi is a PNP power BJT with 65W max power dissipation, 80V max collector-emitter voltage, and 6A max collector current. It is ideal for switching applications due to its single configuration and through-hole terminal form. The transistor's silicon element material ensures reliable performance at up to 150°C operating temperature.

COLLECTOR

6 A

80 V

SINGLE

15

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

65 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

TIP33AG by Onsemi

TIP33AG

Onsemi

TIP33AG by Onsemi is a NPN power BJT with 80W max power dissipation, ideal for switching applications. It has a max collector-emitter voltage of 60V, 10A max collector current, and operates up to 150 °C. With a min hFE of 20 and fT of 3MHz, it's suitable for high-power electronic circuits in various industries.

10 A

60 V

SINGLE

20

TO-218

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

80 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

BD234G by Onsemi

BD234G

Onsemi

BD234G by Onsemi is a PNP BJT transistor with 45V VCEO, 2A IC, and 25W power dissipation. Ideal for amplifier applications, it has a hFE of 25 and operates up to 150°C. The package style is flange mount with a rectangular shape and matte tin finish in a through-hole terminal form.

2 A

45 V

SINGLE

25

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

25 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

3 MHz