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2N4918G

Onsemi

2N4918G by Onsemi

The Onsemi 2N4918G is a PNP power BJT with max. collector-emitter voltage of 40V, max. collector current of 3A, and max. power dissipation of 30W. It is used for switching applications due to its single configuration and through-hole terminal form in a rectangular package style.

Median Price

$0.820

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 147 parts In-Stock

1+ parts

$0.820

100+ parts

$0.490

1k+ parts

$0.400

10k+ parts

$0.324

147

$0.820

$0.490

$0.400

$0.324

DigiKey

USA . 114 parts In-Stock

1+ parts

$1.240

100+ parts

$0.515

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-

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114

$1.240

$0.515

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Rochester

USA . 51,592 parts In-Stock

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-

100+ parts

$0.365

1k+ parts

$0.303

10k+ parts

$0.270

51,592

-

$0.365

$0.303

$0.270

Flip Electronics (Authorized)

USA . 3,000 parts In-Stock

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Digiode

USA . 2,356 parts In-Stock

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$0.114

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2,356

$0.114

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Vyrian

USA . 6,054 parts In-Stock

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6,054

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Flip Electronics

USA . 4,000 parts In-Stock

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4,000

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Bristol Electronics

USA . 650 parts In-Stock

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650

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Flex Direct, LLC

USA . 650 parts In-Stock

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650

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ComSIT Distribution GmbH

Germany . 500 parts In-Stock

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500

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Microfarads

USA . 473 parts In-Stock

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473

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Sunrise Surplus Inc.

USA . 22 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 122 parts In-Stock

1+ parts

$0.076

100+ parts

-

1k+ parts

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10k+ parts

$0.073

122

$0.076

-

-

$0.073

Northwest PG Solutions

USA . 639 parts In-Stock

1+ parts

$0.084

100+ parts

-

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10k+ parts

$0.074

639

$0.084

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-

$0.074

Corphita

USA . 1,785 parts In-Stock

1+ parts

$0.108

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1,785

$0.108

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Corohmni

South Africa . 317 parts In-Stock

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$0.120

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317

$0.120

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Ampacity Inc.

Singapore . 10,950 parts In-Stock

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$0.254

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$0.254

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Continental Prestige Electronics

USA . 1,125 parts In-Stock

1+ parts

$0.552

100+ parts

$0.371

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$0.212

10k+ parts

$0.189

1,125

$0.552

$0.371

$0.212

$0.189

Microchip USA

USA . 2,936 parts In-Stock

1+ parts

$5.330

100+ parts

$5.300

1k+ parts

$5.280

10k+ parts

$5.260

2,936

$5.330

$5.300

$5.280

$5.260

A-Z Elektronik GmbH

Germany . 6,894 parts In-Stock

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Kulean Microsystems

USA . 5,567 parts In-Stock

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5,567

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Problanco Electronics

Mexico . 4,678 parts In-Stock

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TANS Electronics

Latvia . 4,480 parts In-Stock

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Kepictronics

USA . 4,330 parts In-Stock

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Perfect Parts

USA . 3,390 parts In-Stock

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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SupplyDigital Components

Austria . 795 parts In-Stock

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795

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UHIMA Technologies

Türkiye . 246 parts In-Stock

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246

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Overview

Unleash the power of the 2N4918G by Onsemi, a top-quality Power Bipolar Junction Transistor that ensures reliable performance in switching applications. Manufactured by the renowned Onsemi, this PNP transistor offers a single configuration with a maximum collector-emitter voltage of 40V and a maximum collector current of 3A. With a nominal transition frequency of 3MHz and a minimum DC current gain of 10, this transistor is designed to deliver efficiency and durability. Elevate your projects with the superior quality and unmatched value of the 2N4918G from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, suitable for various applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into circuits where PNP transistors are preferred.

Configuration: SINGLE

The single configuration simplifies the circuit design and makes it easier to manage.

Transistor Application: SWITCHING

Designed for switching applications, this transistor provides fast response times and efficient performance.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy placement on circuit boards and saves space.

Terminal Form: THROUGH-HOLE

The through-hole terminal form enables easy and secure soldering onto circuit boards.

Maximum Power Dissipation (Abs): 30 W

With a high maximum power dissipation, this product can handle high power loads without overheating.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides stability and support for the transistor when mounted on a surface.

Minimum DC Current Gain (hFE): 10

The minimum DC current gain ensures reliable amplification of current in the circuit.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand harsh operating conditions.

Maximum Collector-Emitter Voltage: 40 V

The high maximum collector-emitter voltage rating ensures the transistor can handle high voltage levels in the circuit.

Transistor Element Material: SILICON

Silicon material provides good performance characteristics and reliability for the transistor.

Maximum Collector Current (IC): 3 A

The high maximum collector current rating allows for handling high current loads in the circuit.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability and corrosion resistance for the terminals.

Terminal Position: SINGLE

The single terminal position simplifies connection and ensures proper orientation in the circuit.

Nominal Transition Frequency (fT): 3 MHz

With a high nominal transition frequency, this transistor can switch at high frequencies for fast operation.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N4918G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N4918G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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