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MJH11019G

Onsemi

MJH11019G by Onsemi

The Onsemi MJH11019G is a PNP power BJT with a max collector-emitter voltage of 200V and collector current of 15A. Featuring a Darlington configuration, it has a min DC current gain of 100 and is ideal for switching applications. With a max power dissipation of 150W and operating temperature up to 150°C, this transistor is suitable for high-power electronic circuits.

Median Price

$4.113

Lifecycle Status

Suppliers In-Stock

20

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 80 parts In-Stock

1+ parts

$4.860

100+ parts

$2.370

1k+ parts

$2.110

10k+ parts

-

80

$4.860

$2.370

$2.110

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Mouser Electronics

USA . 194 parts In-Stock

1+ parts

$5.770

100+ parts

-

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$2.540

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194

$5.770

-

$2.540

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DigiKey

USA . 164 parts In-Stock

1+ parts

$5.770

100+ parts

$3.263

1k+ parts

$2.306

10k+ parts

$2.219

164

$5.770

$3.263

$2.306

$2.219

Newark

USA . 58 parts In-Stock

1+ parts

$6.720

100+ parts

$3.810

1k+ parts

$3.510

10k+ parts

-

58

$6.720

$3.810

$3.510

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Element14

Singapore . 80 parts In-Stock

1+ parts

$8.230

100+ parts

$3.690

1k+ parts

$3.550

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80

$8.230

$3.690

$3.550

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Arrow

USA . 240 parts In-Stock

1+ parts

-

100+ parts

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$2.355

10k+ parts

$2.268

240

-

-

$2.355

$2.268

Avnet

USA . 210 parts In-Stock

1+ parts

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210

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Chip1Stop

Japan . 170 parts In-Stock

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-

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$2.780

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170

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$2.780

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Verical

USA . 50 parts In-Stock

1+ parts

-

100+ parts

$3.313

1k+ parts

$2.343

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50

-

$3.313

$2.343

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Flip Electronics (Authorized)

USA . 48 parts In-Stock

1+ parts

-

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-

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48

-

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Rochester

USA . 3 parts In-Stock

1+ parts

-

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$2.220

1k+ parts

$1.990

10k+ parts

$1.870

3

-

$2.220

$1.990

$1.870

RS (Exports)

UK . 1 parts In-Stock

1+ parts

-

100+ parts

$3.366

1k+ parts

$2.486

10k+ parts

-

1

-

$3.366

$2.486

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,319 parts In-Stock

1+ parts

$2.346

100+ parts

-

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-

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2,319

$2.346

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-

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Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$2.911

100+ parts

-

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150

$2.911

-

-

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TME

Poland . 39 parts In-Stock

1+ parts

$5.340

100+ parts

$2.940

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-

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39

$5.340

$2.940

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Vyrian

USA . 4,503 parts In-Stock

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4,503

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Cyclops Electronics Ltd

UK . 3,000 parts In-Stock

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3,000

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NAC Semi

USA . 1,500 parts In-Stock

1+ parts

-

100+ parts

$3.580

1k+ parts

-

10k+ parts

$3.300

1,500

-

$3.580

-

$3.300

Schukat

Germany . 110 parts In-Stock

1+ parts

-

100+ parts

$3.525

1k+ parts

$2.923

10k+ parts

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110

-

$3.525

$2.923

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Flip Electronics

USA . 48 parts In-Stock

1+ parts

-

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48

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Distributors (Availability)

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Ampacity Inc.

Singapore . 149 parts In-Stock

1+ parts

$2.000

100+ parts

-

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149

$2.000

-

-

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Corphita

USA . 2,253 parts In-Stock

1+ parts

$2.223

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2,253

$2.223

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Corohmni

South Africa . 129 parts In-Stock

1+ parts

$2.241

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129

$2.241

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Argo Parts USA

USA . 2,397 parts In-Stock

1+ parts

$2.911

100+ parts

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2,397

$2.911

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

$2.911

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2,000

$2.911

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Continental Prestige Electronics

USA . 74 parts In-Stock

1+ parts

$4.490

100+ parts

$2.130

1k+ parts

$2.060

10k+ parts

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74

$4.490

$2.130

$2.060

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Microchip USA

USA . 9,614 parts In-Stock

1+ parts

$32.435

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9,614

$32.435

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iodParts Technologies Inc.

India . 89,130 parts In-Stock

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89,130

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SupplyDigital Components

Austria . 8,081 parts In-Stock

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8,081

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TANS Electronics

Latvia . 6,277 parts In-Stock

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6,277

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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Problanco Electronics

Mexico . 1,001 parts In-Stock

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Perfect Parts

USA . 909 parts In-Stock

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909

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A-Z Elektronik GmbH

Germany . 797 parts In-Stock

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797

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Kulean Microsystems

USA . 486 parts In-Stock

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486

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Assy Fe

Spain . 180 parts In-Stock

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180

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UHIMA Technologies

Türkiye . 65 parts In-Stock

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65

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Eastek

USA . 60 parts In-Stock

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60

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GreenTree Electronics

Israel . 60 parts In-Stock

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60

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Overview

Elevate your power switching capabilities with the MJH11019G by Onsemi. Crafted by a trusted manufacturer, this Power Bipolar Junction Transistor offers unparalleled quality and reliability for a wide range of applications. From its Darlington configuration to built-in diode and resistor, this PNP transistor is designed to optimize performance. With a maximum collector current of 15A and a maximum operating temperature of 150°C, this product ensures seamless functionality under demanding conditions. Experience the value and benefits of superior power management with the MJH11019G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body provides durability and protection for the transistor, making it suitable for various industrial applications.

Polarity or Channel Type: PNP

The PNP polarity offers efficient switching capabilities in electronic circuits, making this transistor ideal for applications where PNP transistors are required.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration, along with the built-in diode and resistor, simplifies circuit design and improves efficiency, making it a convenient choice for switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers high performance and reliability in quickly turning on and off, making it essential for electronic switching circuits.

Maximum Power Dissipation (Abs): 150 W

With a high maximum power dissipation of 150 W, this transistor can handle large power loads, making it suitable for applications that require high power handling capabilities.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and placement on circuit boards, providing convenience in assembly and integration.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperatures, ensuring reliable performance in various operating conditions.

Maximum Collector-Emitter Voltage: 200 V

The high maximum collector-emitter voltage of 200 V allows for usage in circuits where higher voltage levels are required, expanding the range of applications for this transistor.

Maximum Collector Current (IC): 15 A

The high maximum collector current of 15 A enables the transistor to handle large currents, making it suitable for applications that demand high current switching capabilities.

Nominal Transition Frequency (fT): 3 MHz

With a nominal transition frequency of 3 MHz, this transistor can switch at high frequencies, making it suitable for applications that require fast response times and high-speed switching.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJH11019G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

200 V

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJH11019G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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