Loading...

MJH11017G

Onsemi

MJH11017G by Onsemi

MJH11017G by Onsemi is a PNP Power BJT with 150V VCEO, 15A IC, and 150W Ptot. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor in a rectangular package suitable for flange mount. Operating up to 150 °C, this transistor has an hFE of at least 100 and fT of 3MHz.

Median Price

$5.420

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 8 parts In-Stock

1+ parts

$1.913

100+ parts

-

1k+ parts

-

10k+ parts

-

8

$1.913

-

-

-

Farnell

UK . 220 parts In-Stock

1+ parts

$4.410

100+ parts

$2.730

1k+ parts

-

10k+ parts

-

220

$4.410

$2.730

-

-

Mouser Electronics

USA . 632 parts In-Stock

1+ parts

$6.430

100+ parts

-

1k+ parts

$2.960

10k+ parts

$2.560

632

$6.430

-

$2.960

$2.560

DigiKey

USA . 69 parts In-Stock

1+ parts

$6.430

100+ parts

$3.665

1k+ parts

$2.613

10k+ parts

$2.563

69

$6.430

$3.665

$2.613

$2.563

Element14

Singapore . 220 parts In-Stock

1+ parts

$7.060

100+ parts

$3.610

1k+ parts

-

10k+ parts

-

220

$7.060

$3.610

-

-

Newark

USA . 220 parts In-Stock

1+ parts

$7.430

100+ parts

$4.430

1k+ parts

$4.190

10k+ parts

-

220

$7.430

$4.430

$4.190

-

Avnet

USA . 2,100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,100

-

-

-

-

Verical

USA . 360 parts In-Stock

1+ parts

-

100+ parts

$2.579

1k+ parts

-

10k+ parts

-

360

-

$2.579

-

-

Flip Electronics (Authorized)

USA . 125 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

125

-

-

-

-

Rochester

USA . 52 parts In-Stock

1+ parts

-

100+ parts

$2.570

1k+ parts

$2.300

10k+ parts

$2.160

52

-

$2.570

$2.300

$2.160

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,008 parts In-Stock

1+ parts

$2.708

100+ parts

-

1k+ parts

-

10k+ parts

-

2,008

$2.708

-

-

-

Vyrian

USA . 13,089 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

13,089

-

-

-

-

NAC Semi

USA . 8,400 parts In-Stock

1+ parts

-

100+ parts

$6.700

1k+ parts

-

10k+ parts

$6.030

8,400

-

$6.700

-

$6.030

IBS Electronics

USA . 2,820 parts In-Stock

1+ parts

-

100+ parts

$3.224

1k+ parts

$3.120

10k+ parts

-

2,820

-

$3.224

$3.120

-

Chip Stock

USA . 210 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

210

-

-

-

-

Flip Electronics

USA . 125 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

125

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,993 parts In-Stock

1+ parts

$2.565

100+ parts

-

1k+ parts

-

10k+ parts

-

1,993

$2.565

-

-

-

Corohmni

South Africa . 206 parts In-Stock

1+ parts

$2.610

100+ parts

-

1k+ parts

-

10k+ parts

-

206

$2.610

-

-

-

Microchip USA

USA . 2,611 parts In-Stock

1+ parts

$15.512

100+ parts

-

1k+ parts

-

10k+ parts

-

2,611

$15.512

-

-

-

SupplyDigital Components

Austria . 6,060 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,060

-

-

-

-

TANS Electronics

Latvia . 3,768 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,768

-

-

-

-

Authorized Procurement Solutions

USA . 1,860 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,860

-

-

-

-

iodParts Technologies Inc.

India . 1,260 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,260

-

-

-

-

UHIMA Technologies

Türkiye . 904 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

904

-

-

-

-

Problanco Electronics

Mexico . 875 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

875

-

-

-

-

Perfect Parts

USA . 623 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

623

-

-

-

-

Kulean Microsystems

USA . 342 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

342

-

-

-

-

GreenTree Electronics

Israel . 60 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

60

-

-

-

-

Overview

Power up your projects with the MJH11017G by Onsemi! As a leading manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors that are perfect for switching applications. The MJH11017G's Darlington configuration with built-in diode and resistor offers unmatched convenience and efficiency. With a maximum power dissipation of 150W and a collector current of 15A, this transistor is designed to handle your toughest tasks. Trust Onsemi for reliable performance and exceptional value. Experience the difference with the MJH11017G today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring durability and reliability in various operating conditions.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are preferred, offering flexibility in circuit design.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Simplifies circuit design and saves space by integrating additional components, making it convenient for switching applications.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring efficient and reliable performance in such scenarios.

Package Shape: RECTANGULAR

Easy to handle and mount in various circuit setups, allowing for versatility in design and installation.

Maximum Power Dissipation (Abs): 150 W

Can handle high power levels, making it suitable for demanding applications where power dissipation is a concern.

Package Style (Meter): FLANGE MOUNT

Allows for secure mounting and connection, providing mechanical stability in applications where vibrations or movements may occur.

Minimum DC Current Gain (hFE): 100

Ensures consistent and reliable amplification of current in the circuit, contributing to overall performance and stability.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, allowing for operation in challenging environments without compromising performance.

Maximum Collector-Emitter Voltage: 150 V

Can handle high voltages, offering versatility and compatibility with various voltage levels in different circuits.

Transistor Element Material: SILICON

Provides good performance and efficiency, making it a reliable choice for a wide range of applications.

Maximum Collector Current (IC): 15 A

Capable of handling high currents, making it suitable for applications where high current capabilities are required.

Terminal Finish: MATTE TIN

Improves solderability and conductivity, ensuring secure and efficient connections in the circuit.

Terminal Position: SINGLE

Simplified connection setup, making it easy to integrate into various circuit configurations.

Case Connection: COLLECTOR

Provides easy access to the collector terminal, facilitating connection and circuit design.

Nominal Transition Frequency (fT): 3 MHz

Suitable for high-frequency switching applications, ensuring fast and reliable transistor operation.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJH11017G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

150 V

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJH11017G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20