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MJH11018

Onsemi

MJH11018 by Onsemi

MJH11018 by Onsemi is a NPN BJT with 150V VCE, 15A IC, and 150W Pd. It's a Darlington transistor for switching applications in a plastic package with through-hole terminals.

Median Price

$7.950

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Vyrian

USA . 2,159 parts In-Stock

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Digiode

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Fibra_Brandt Electronic GMBH

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GES GmbH

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Kepictronics

USA . 8,000 parts In-Stock

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TANS Electronics

Latvia . 6,512 parts In-Stock

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Problanco Electronics

Mexico . 4,321 parts In-Stock

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SupplyDigital Components

Austria . 3,210 parts In-Stock

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Corphita

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Kulean Microsystems

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UHIMA Technologies

Türkiye . 554 parts In-Stock

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Corohmni

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Overview

Looking for a reliable and high-quality Power Bipolar Junction Transistor? Look no further than the MJH11018 by Onsemi. With a reputation for excellence, Onsemi delivers top-notch products like the MJH11018 that are perfect for switching applications. This NPN transistor features a Darlington configuration with a built-in diode and resistor, ensuring optimal performance. With a maximum power dissipation of 150W and a maximum collector current of 15A, this transistor offers unmatched value and benefits to customers. Trust Onsemi and the MJH11018 for all your power transistor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the transistor easy to handle and resistant to damage.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications, making this product versatile for various electronic projects.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration provides high current gain and the built-in diode and resistor simplify the circuit design, making this product efficient and easy to use.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor ensures reliable performance in tasks that require frequent on/off switching.

Maximum Power Dissipation (Abs): 150 W

With a high power dissipation value, this transistor can handle large amounts of power without overheating, making it suitable for demanding applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this transistor to operate reliably in a wide range of environments, ensuring consistent performance.

Maximum Collector-Emitter Voltage: 150 V

With a high maximum voltage rating, this transistor can handle high voltages without breaking down, making it suitable for high voltage applications.

Maximum Collector Current (IC): 15 A

The high maximum collector current rating allows this transistor to handle large currents, making it suitable for high-power applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJH11018 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

150 V

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-218

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJH11018 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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