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MJH11022

Onsemi

MJH11022 by Onsemi

MJH11022 by Onsemi is a NPN BJT transistor with Darlington configuration, ideal for switching applications. It has a max power dissipation of 150W, hFE of 100, and can handle up to 15A collector current. This rectangular package with through-hole terminals operates at a max temp of 150 °C, making it suitable for high-power electronic circuits.

Median Price

$12.235

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (In-Stock)

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Component Electronics Inc.

Canada . 10 parts In-Stock

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$4.620

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$3.460

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$3.000

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$4.620

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$3.000

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American Microsemiconductor Inc.

USA . 4 parts In-Stock

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$19.850

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Digiode

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Vyrian

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R&J Components

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ComSIT Distribution GmbH

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PC Components Company LLC

USA . 37 parts In-Stock

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Bristol Electronics

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Resion

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Fibra_Brandt Electronic GMBH

Germany . 16 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 6 parts In-Stock

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Sunrise Surplus Inc.

USA . 6 parts In-Stock

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Prism Electronics

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GES GmbH

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Cyclops Electronics Ltd

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LittleDiode

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Corohmni

South Africa . 401 parts In-Stock

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$4.620

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401

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Kulean Microsystems

USA . 7,622 parts In-Stock

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SupplyDigital Components

Austria . 6,103 parts In-Stock

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TANS Electronics

Latvia . 3,727 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 3,496 parts In-Stock

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Authorized Procurement Solutions

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Problanco Electronics

Mexico . 2,479 parts In-Stock

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Corphita

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Metaverse IC Inc.

Canada . 201 parts In-Stock

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UHIMA Technologies

Türkiye . 165 parts In-Stock

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Assy Fe

Spain . 6 parts In-Stock

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Perfect Parts

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Overview

Elevate your power management solutions with the MJH11022 by Onsemi, a high-quality Power Bipolar Junction Transistor. This NPN Darlington transistor is designed for switching applications, offering reliable performance and durability. With a built-in diode and resistor, this product ensures efficient power dissipation of up to 150W. Perfect for a variety of electronics projects, the MJH11022 guarantees smooth operation and optimal functionality. Trust Onsemi's reputation for excellence and choose this transistor for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a wide range of applications.

Polarity or Channel Type: NPN

Commonly used in electronic devices and allows for switching operations in various circuits.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Simplifies circuit design and reduces the need for additional components, making it efficient and cost-effective.

Transistor Application: SWITCHING

Designed for high-speed switching applications, making it ideal for use in power control circuits.

Maximum Power Dissipation (Abs): 150 W

Can handle high power levels, ensuring reliable operation in demanding conditions.

Maximum Collector-Emitter Voltage: 250 V

Suitable for applications that require high voltage handling capabilities.

Maximum Collector Current (IC): 15 A

Can handle high current levels, making it versatile for various circuit requirements.

Nominal Transition Frequency (fT): 3 MHz

Provides high-speed performance, allowing for fast switching operations.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJH11022 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-218

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJH11022 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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