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MJH11017

Onsemi

MJH11017 by Onsemi

MJH11017 by Onsemi is a PNP power BJT with 150V VCEO, 15A IC, and 150W Ptot. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor in a rectangular package suitable for flange mount.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Vyrian

USA . 1,527 parts In-Stock

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Digiode

USA . 602 parts In-Stock

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R&J Components

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LittleDiode

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Prism Electronics

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Component Stockers USA

USA . 5,247 parts In-Stock

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$4.620

100+ parts

$4.390

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$4.260

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Problanco Electronics

Mexico . 6,869 parts In-Stock

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SupplyDigital Components

Austria . 4,155 parts In-Stock

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TANS Electronics

Latvia . 2,785 parts In-Stock

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Corphita

USA . 1,259 parts In-Stock

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Kulean Microsystems

USA . 1,004 parts In-Stock

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UHIMA Technologies

Türkiye . 759 parts In-Stock

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Corohmni

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Overview

Experience the next level of performance with the MJH11017 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors for various applications. The MJH11017 offers customers unrivaled value with its advanced Darlington configuration, built-in diode and resistor, making it ideal for switching applications. With a maximum power dissipation of 150W and maximum collector current of 15A, this transistor provides reliable and efficient operation. Trust Onsemi to deliver superior products that exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, making the transistor durable and reliable.

Polarity or Channel Type: PNP

Allows for easy integration into PNP circuit designs, making it versatile and compatible with a wide range of applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The integrated diode and resistor simplify circuit design and save space, making this transistor a convenient choice for switching applications.

Transistor Application: SWITCHING

Optimized for fast switching applications, ensuring efficient performance in high-speed circuit operations.

Maximum Power Dissipation (Abs): 150 W

Capable of handling high power levels, making it suitable for applications where power dissipation is a concern.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without performance degradation, ensuring reliability in demanding environments.

Maximum Collector-Emitter Voltage: 150 V

Can withstand high voltage levels, providing flexibility in circuit designs and enhancing overall reliability.

Maximum Collector Current (IC): 15 A

Capable of handling high current levels, making it suitable for applications where high current switching is required.

Nominal Transition Frequency (fT): 3 MHz

Has a high transition frequency, allowing for fast operation and ensuring efficient performance in high-frequency circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJH11017 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

150 V

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-218

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJH11017 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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