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MJH11021

Onsemi

MJH11021 by Onsemi

MJH11021 by Onsemi is a PNP BJT transistor with a max power dissipation of 150W and max collector-emitter voltage of 250V. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor. With a min hFE of 100, this transistor operates at up to 150°C and has a peak reflow temperature of 235°C.

Median Price

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Lifecycle Status

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Digiode

USA . 2,171 parts In-Stock

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Vyrian

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ComSIT Distribution GmbH

Germany . 680 parts In-Stock

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680

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Nova Conductors

Japan . 450 parts In-Stock

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LWI Electronics Inc

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Cyclops Electronics Ltd

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ACDS - Activité Composants Distribution Service

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LittleDiode

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Sunrise Surplus Inc.

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Aztec Data Supply Inc.

USA . 1,959 parts In-Stock

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$0.954

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AZTECH Wire

Italy . 832 parts In-Stock

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Ampacity Inc.

Singapore . 611 parts In-Stock

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$48.050

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Problanco Electronics

Mexico . 7,645 parts In-Stock

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Kulean Microsystems

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Argo Parts USA

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Lixinc

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Continental Prestige Electronics

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TANS Electronics

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Corphita

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Aranea Global

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UHIMA Technologies

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Corohmni

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SupplyDigital Components

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Overview

Discover the power of the MJH11021 by Onsemi, a top-quality Power Bipolar Junction Transistor that offers unmatched performance and reliability. With a built-in diode and resistor, this PNP transistor is perfect for switching applications, providing seamless functionality and efficiency. The MJH11021's 150W maximum power dissipation and 250V maximum collector-emitter voltage make it a versatile choice for a wide range of projects. Trust in Onsemi's reputation for excellence and innovation, and experience the value and benefits this product brings to your work. Elevate your designs with the MJH11021 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and durable, ideal for various applications.

Polarity or Channel Type: PNP

The PNP polarity allows for easy integration into existing circuits and systems, enhancing versatility.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration with built-in diode and resistor simplifies circuit design and reduces the need for additional components.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring efficient performance and reliability.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy installation and mounting in various electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and enable easy soldering during installation.

No. of Terminals: 3

With three terminals, this product offers straightforward connections and compatibility with standard circuit designs.

Maximum Power Dissipation (Abs): 150 W

The high maximum power dissipation of 150W ensures reliable performance under heavy loads and harsh conditions.

Package Style (Meter): FLANGE MOUNT

The flange mount package style simplifies installation and allows for efficient heat dissipation, extending the product's lifespan.

Minimum DC Current Gain (hFE): 100

A minimum DC current gain of 100 ensures consistent amplification and signal stability in various applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this product can withstand high temperatures, making it suitable for challenging environments.

Maximum Collector-Emitter Voltage: 250 V

The high maximum collector-emitter voltage of 250V allows for use in a wide range of voltage applications, enhancing versatility.

Transistor Element Material: SILICON

The silicon transistor element material ensures high performance, low leakage, and long-term reliability.

Maximum Collector Current (IC): 15 A

With a maximum collector current of 15A, this product can handle high current loads, making it suitable for power applications.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead terminal finish provides excellent conductivity and solderability, ensuring secure and reliable connections.

Terminal Position: SINGLE

The single terminal position simplifies installation and circuit design, improving overall efficiency.

Case Connection: COLLECTOR

The case connection at the collector terminal enhances thermal management and facilitates heat dissipation for improved performance.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature of 30 seconds ensures proper soldering and reliability during assembly.

Peak Reflow Temperature °C: 235

The peak reflow temperature of 235°C allows for efficient and reliable soldering during assembly processes.

Nominal Transition Frequency (fT): 3 MHz

With a nominal transition frequency of 3MHz, this product offers fast switching speeds and high-frequency performance for demanding applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJH11021 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-218

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJH11021 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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