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MJH11020G

Onsemi

MJH11020G by Onsemi

MJH11020G by Onsemi is a power BJT transistor with NPN polarity. It has a max power dissipation of 150W and can handle a max collector current of 15A. This transistor is commonly used for switching applications.

Median Price

$6.520

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 43 parts In-Stock

1+ parts

$5.610

100+ parts

$2.920

1k+ parts

$2.340

10k+ parts

-

43

$5.610

$2.920

$2.340

-

DigiKey

USA . 347 parts In-Stock

1+ parts

$6.520

100+ parts

$3.726

1k+ parts

$2.659

10k+ parts

$2.615

347

$6.520

$3.726

$2.659

$2.615

Mouser Electronics

USA . 45 parts In-Stock

1+ parts

$6.520

100+ parts

-

1k+ parts

$2.990

10k+ parts

-

45

$6.520

-

$2.990

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Newark

USA . 297 parts In-Stock

1+ parts

$7.340

100+ parts

$4.750

1k+ parts

$4.010

10k+ parts

-

297

$7.340

$4.750

$4.010

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Element14

Singapore . 43 parts In-Stock

1+ parts

$9.440

100+ parts

$4.030

1k+ parts

$3.870

10k+ parts

-

43

$9.440

$4.030

$3.870

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Arrow

USA . 90 parts In-Stock

1+ parts

-

100+ parts

$3.068

1k+ parts

$2.604

10k+ parts

-

90

-

$3.068

$2.604

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Verical

USA . 90 parts In-Stock

1+ parts

-

100+ parts

$3.068

1k+ parts

$2.604

10k+ parts

-

90

-

$3.068

$2.604

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,955 parts In-Stock

1+ parts

$2.480

100+ parts

-

1k+ parts

-

10k+ parts

-

1,955

$2.480

-

-

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Nova Conductors

Japan . 15 parts In-Stock

1+ parts

$3.828

100+ parts

-

1k+ parts

-

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15

$3.828

-

-

-

TME

Poland . 18 parts In-Stock

1+ parts

$6.020

100+ parts

$4.830

1k+ parts

-

10k+ parts

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18

$6.020

$4.830

-

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Vyrian

USA . 9,716 parts In-Stock

1+ parts

-

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9,716

-

-

-

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IBS Electronics

USA . 600 parts In-Stock

1+ parts

-

100+ parts

$3.185

1k+ parts

$3.107

10k+ parts

$3.068

600

-

$3.185

$3.107

$3.068

NAC Semi

USA . 180 parts In-Stock

1+ parts

-

100+ parts

$4.380

1k+ parts

$4.060

10k+ parts

-

180

-

$4.380

$4.060

-

Schukat

Germany . 100 parts In-Stock

1+ parts

-

100+ parts

$4.384

1k+ parts

$3.634

10k+ parts

-

100

-

$4.384

$3.634

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Flip Electronics

USA . 90 parts In-Stock

1+ parts

-

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-

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90

-

-

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 300 parts In-Stock

1+ parts

$1.665

100+ parts

$1.515

1k+ parts

$1.365

10k+ parts

-

300

$1.665

$1.515

$1.365

-

Ampacity Inc.

Singapore . 147 parts In-Stock

1+ parts

$2.120

100+ parts

-

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-

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147

$2.120

-

-

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Corphita

USA . 1,786 parts In-Stock

1+ parts

$2.349

100+ parts

-

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-

10k+ parts

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1,786

$2.349

-

-

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Corohmni

South Africa . 276 parts In-Stock

1+ parts

$2.555

100+ parts

-

1k+ parts

-

10k+ parts

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276

$2.555

-

-

-

Bastille Electronics

Australia . 50 parts In-Stock

1+ parts

$3.828

100+ parts

$3.637

1k+ parts

$3.455

10k+ parts

$3.407

50

$3.828

$3.637

$3.455

$3.407

AZTECH Wire

Italy . 629 parts In-Stock

1+ parts

$15.200

100+ parts

-

1k+ parts

-

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629

$15.200

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-

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QUARKTWIN TECHNOLOGY LTD

USA . 29,269 parts In-Stock

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29,269

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Lixinc

USA . 19,655 parts In-Stock

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19,655

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Microchip USA

USA . 7,703 parts In-Stock

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7,703

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TANS Electronics

Latvia . 6,754 parts In-Stock

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6,754

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Problanco Electronics

Mexico . 4,810 parts In-Stock

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4,810

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Perfect Parts

USA . 4,683 parts In-Stock

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4,683

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Argo Parts USA

USA . 4,495 parts In-Stock

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4,495

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SupplyDigital Components

Austria . 4,455 parts In-Stock

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4,455

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Kulean Microsystems

USA . 3,166 parts In-Stock

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3,166

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Continental Prestige Electronics

USA . 2,197 parts In-Stock

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2,197

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-

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Authorized Procurement Solutions

USA . 600 parts In-Stock

1+ parts

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600

-

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UHIMA Technologies

Türkiye . 461 parts In-Stock

1+ parts

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461

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Eastek

USA . 240 parts In-Stock

1+ parts

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240

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Overview

Discover the power of the MJH11020G by Onsemi, a high-quality Power Bipolar Junction Transistor (BJT) that offers unbeatable advantages. Manufactured by Onsemi, a trusted industry leader, this NPN transistor is designed for switching applications. With its Darlington configuration and built-in diode and resistor, it provides maximum efficiency and reliable performance. Its maximum power dissipation of 150 W ensures durability and longevity. Whether you need to control motors, drive solenoids, or regulate power supplies, this versatile transistor has got you covered. Trust in Onsemi's expertise and experience and unlock the potential of the MJH11020G today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering good performance characteristics.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration provides high current gain, while the built-in diode and resistor offer added convenience and functionality.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable operation in such scenarios.

Maximum Power Dissipation: 150 W

Capable of handling high power levels, making it suitable for a wide range of applications that require power switching.

Maximum Collector-Emitter Voltage: 200 V

Can withstand high voltages, expanding the range of applications where the transistor can be used.

Maximum Collector Current (IC): 15 A

Offers high collector current capability, allowing for handling of significant current levels in various applications.

Nominal Transition Frequency (fT): 3 MHz

Provides good frequency response, making the transistor suitable for high-speed switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJH11020G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

200 V

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJH11020G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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