Loading...

MJH11020

Onsemi

MJH11020 by Onsemi

MJH11020 by Onsemi is a NPN Power BJT with Darlington configuration, ideal for switching applications. It features a max power dissipation of 150W, collector-emitter voltage of 200V, and collector current of 15A. This transistor has a min DC current gain of 100 and operates at temperatures up to 150°C in a rectangular package style suitable for flange mounting.

Median Price

-

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,349 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,349

-

-

-

-

Vyrian

USA . 678 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

678

-

-

-

-

ECAB

Sweden . 86 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

86

-

-

-

-

Nova Conductors

Japan . 20 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

20

-

-

-

-

Resion

USA . 9 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9

-

-

-

-

Sunrise Surplus Inc.

USA . 6 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6

-

-

-

-

LittleDiode

UK . 1 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 678 parts In-Stock

1+ parts

$13.728

100+ parts

-

1k+ parts

-

10k+ parts

-

678

$13.728

-

-

-

Ampacity Inc.

Singapore . 1,420 parts In-Stock

1+ parts

$54.050

100+ parts

-

1k+ parts

-

10k+ parts

-

1,420

$54.050

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 7,954 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,954

-

-

-

-

Problanco Electronics

Mexico . 6,582 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,582

-

-

-

-

TANS Electronics

Latvia . 5,698 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,698

-

-

-

-

Kulean Microsystems

USA . 4,071 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,071

-

-

-

-

SupplyDigital Components

Austria . 3,284 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,284

-

-

-

-

Corphita

USA . 2,164 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,164

-

-

-

-

Bastille Electronics

Australia . 450 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

450

-

-

-

-

UHIMA Technologies

Türkiye . 235 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

235

-

-

-

-

Corohmni

South Africa . 179 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

179

-

-

-

-

Overview

Elevate your electronic projects with the MJH11020 by Onsemi. As a trusted manufacturer of high-quality Power Bipolar Junction Transistors, Onsemi delivers reliability and performance you can count on. Whether you're looking to enhance switching applications or improve power dissipation, this NPN transistor with built-in diode and resistor offers unmatched value. With a maximum collector-emitter voltage of 200V and an operating temperature of up to 150°C, the MJH11020 is the perfect choice for your next project. Upgrade now and experience the benefits of superior technology at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and reliability for the transistor, making it suitable for extended use in various environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used for general purpose applications and are easy to incorporate into circuit designs.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration offers high current gain and the built-in diode and resistor provide added protection and convenience in circuit design.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers efficient performance in switching circuits.

Maximum Power Dissipation (Abs): 150 W

With a high maximum power dissipation rating, this transistor can handle large loads and prevent overheating during operation.

Maximum Collector-Emitter Voltage: 200 V

The high maximum collector-emitter voltage allows for versatile use in different voltage applications.

Maximum Collector Current (IC): 15 A

With a high maximum collector current rating, this transistor can handle large current flows without damage.

Nominal Transition Frequency (fT): 3 MHz

The high transition frequency enables fast switching speeds, making this transistor ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJH11020 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

200 V

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-218

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJH11020 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20