Loading...

MJH11019

Onsemi

MJH11019 by Onsemi

MJH11019 by Onsemi is a PNP power BJT with 200V VCE, 15A IC, and 150W Pd. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor in a plastic/epoxy package. With hFE of 100 and fT of 3MHz, it operates up to 150°C making it suitable for high-power tasks.

Median Price

$9.657

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Electronics Inc.

Canada . 3 parts In-Stock

1+ parts

$3.080

100+ parts

$2.310

1k+ parts

$2.000

10k+ parts

-

3

$3.080

$2.310

$2.000

-

Freelance Electronics

USA . 120 parts In-Stock

1+ parts

$16.234

100+ parts

$17.046

1k+ parts

$16.072

10k+ parts

-

120

$16.234

$17.046

$16.072

-

Vyrian

USA . 935 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

935

-

-

-

-

Nova Conductors

Japan . 750 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

750

-

-

-

-

Digiode

USA . 519 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

519

-

-

-

-

Tech-Mark Corp

USA . 40 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

40

-

-

-

-

ComSIT Distribution GmbH

Germany . 28 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

28

-

-

-

-

ACDS - Activité Composants Distribution Service

France . 20 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

20

-

-

-

-

Sunrise Surplus Inc.

USA . 12 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

12

-

-

-

-

Manotoh

Italy . 10 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10

-

-

-

-

LittleDiode

UK . 8 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8

-

-

-

-

GES GmbH

Germany . 4 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4

-

-

-

-

Resion

USA . 2 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 398 parts In-Stock

1+ parts

$3.080

100+ parts

-

1k+ parts

-

10k+ parts

-

398

$3.080

-

-

-

Ampacity Inc.

Singapore . 1,484 parts In-Stock

1+ parts

$17.050

100+ parts

-

1k+ parts

-

10k+ parts

-

1,484

$17.050

-

-

-

AZTECH Wire

Italy . 735 parts In-Stock

1+ parts

$19.166

100+ parts

-

1k+ parts

-

10k+ parts

-

735

$19.166

-

-

-

Problanco Electronics

Mexico . 6,597 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,597

-

-

-

-

Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,000

-

-

-

-

Kulean Microsystems

USA . 3,117 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,117

-

-

-

-

Corphita

USA . 1,204 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,204

-

-

-

-

TANS Electronics

Latvia . 1,159 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,159

-

-

-

-

SupplyDigital Components

Austria . 659 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

659

-

-

-

-

UHIMA Technologies

Türkiye . 489 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

489

-

-

-

-

Bastille Electronics

Australia . 76 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

76

-

-

-

-

Overview

Elevate your electronic projects to new heights with the MJH11019 Power Bipolar Junction Transistor from Onsemi. Boasting top-notch quality and reliability, this PNP transistor is designed for switching applications, making it a versatile choice for a wide range of projects. With a built-in diode and resistor, this Darlington configuration offers seamless performance and enhanced efficiency. Experience the value and benefits of using this high-power transistor, with a maximum power dissipation of 150W and a maximum collector-emitter voltage of 200V. Trust in Onsemi's expertise and elevate your projects with the MJH11019 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and reliable housing for the transistor to ensure long-term performance.

Polarity or Channel Type: PNP

Suitable for various applications requiring PNP transistors such as complementary symmetry circuits.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Offers enhanced performance and efficiency with the built-in diode and resistor, reducing the need for additional components in the circuit.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in such scenarios.

Maximum Power Dissipation (Abs): 150 W

Can handle higher power dissipation levels, making it suitable for applications requiring high power handling capabilities.

Maximum Operating Temperature: 150 °C

Can operate effectively at high temperatures, ensuring reliability in various operating conditions.

Maximum Collector-Emitter Voltage: 200 V

Suitable for applications requiring higher collector-emitter voltage levels.

Maximum Collector Current (IC): 15 A

Capable of handling higher collector currents, making it suitable for applications with higher current requirements.

Nominal Transition Frequency (fT): 3 MHz

High transition frequency allows for faster switching speeds and better performance in high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJH11019 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

200 V

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-218

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJH11019 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20