Loading...

MJH16006A

Onsemi

MJH16006A by Onsemi

The Onsemi MJH16006A is a NPN BJT transistor with 500V VCE, 8A IC, and 125W Pd. Ideal for switching applications, it features a built-in diode and resistor in a plastic/epoxy package with through-hole terminals. Operating up to 175°C, it offers a min hFE of 5 and comes in a flange mount style.

Median Price

$2.712

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,186 parts In-Stock

1+ parts

-

100+ parts

$2.420

1k+ parts

$2.170

10k+ parts

$2.040

1,186

-

$2.420

$2.170

$2.040

DigiKey

USA . 1,186 parts In-Stock

1+ parts

-

100+ parts

$3.190

1k+ parts

-

10k+ parts

-

1,186

-

$3.190

-

-

Verical

USA . 1,186 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$2.712

10k+ parts

$2.550

1,186

-

-

$2.712

$2.550

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,027 parts In-Stock

1+ parts

$2.230

100+ parts

-

1k+ parts

-

10k+ parts

-

2,027

$2.230

-

-

-

Digiode

USA . 1,686 parts In-Stock

1+ parts

$2.565

100+ parts

-

1k+ parts

-

10k+ parts

-

1,686

$2.565

-

-

-

Bristol Electronics

USA . 124 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

124

-

-

-

-

Atlantic Semiconductor

USA . 124 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

124

-

-

-

-

ACDS - Activité Composants Distribution Service

France . 99 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

99

-

-

-

-

First Choice Components Inc.

USA . 9 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9

-

-

-

-

DigiKey Marketplace

USA . 7 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7

-

-

-

-

Prism Electronics

USA . 7 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 444 parts In-Stock

1+ parts

$2.230

100+ parts

-

1k+ parts

-

10k+ parts

-

444

$2.230

-

-

-

Corphita

USA . 938 parts In-Stock

1+ parts

$2.430

100+ parts

-

1k+ parts

-

10k+ parts

-

938

$2.430

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 11,412 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

11,412

-

-

-

-

TANS Electronics

Latvia . 7,597 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,597

-

-

-

-

SupplyDigital Components

Austria . 5,606 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,606

-

-

-

-

Kulean Microsystems

USA . 5,107 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,107

-

-

-

-

Microchip USA

USA . 4,921 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,921

-

-

-

-

Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Problanco Electronics

Mexico . 2,519 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,519

-

-

-

-

Continental Prestige Electronics

USA . 1,614 parts In-Stock

1+ parts

-

100+ parts

$2.430

1k+ parts

-

10k+ parts

-

1,614

-

$2.430

-

-

UHIMA Technologies

Türkiye . 215 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

215

-

-

-

-

Perfect Parts

USA . 39 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

39

-

-

-

-

Overview

Unlock the power of innovation with the MJH16006A by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch quality and reliability in all their products. The MJH16006A falls under the category of Power Bipolar Junction Transistors (BJT) and is designed for switching applications. With a maximum collector-emitter voltage of 500V and a peak reflow temperature of 235°C, this transistor offers unmatched performance and efficiency. Trust Onsemi to deliver cutting-edge technology that meets your needs and exceeds your expectations. Experience the difference with the MJH16006A today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material makes the transistor lightweight and durable, allowing for easy handling and reliable performance.

Polarity or Channel Type: NPN

The NPN configuration allows for easy integration into existing circuit designs and compatibility with a wide range of applications.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

The built-in diode and resistor simplify circuit design and reduce the need for additional components, making the transistor more efficient and cost-effective.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast response times and high efficiency, making it ideal for use in a variety of electronic devices.

Terminal Form: THROUGH-HOLE

The through-hole terminal form makes it easy to solder and secure the transistor onto a circuit board, ensuring a reliable connection and optimal performance.

Maximum Power Dissipation (Abs): 125 W

With a maximum power dissipation of 125 W, this transistor can handle high power loads without overheating, ensuring long-term reliability in demanding applications.

Maximum Collector-Emitter Voltage: 500 V

The high maximum collector-emitter voltage of 500 V allows for use in high voltage circuits, making this transistor versatile and suitable for a wide range of applications.

Maximum Collector Current (IC): 8 A

With a maximum collector current of 8 A, this transistor can handle high current loads with ease, making it suitable for power switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJH16006A attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

500 V

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-218

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MJH16006A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20