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3 MHz Power Bipolar Junction Transistors (BJT) 52

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NJVMJD148T4G-VF01 by Onsemi

NJVMJD148T4G-VF01

Onsemi

NJVMJD148T4G-VF01 by Onsemi is a NPN BJT transistor with hFE of 30, VCEO of 45V, and IC of 4A. Ideal for amplifier applications, it operates b/w -55 to 150 °C. This small outline package has Gull Wing terminals and is AEC-Q101 compliant.

COLLECTOR

4 A

45 V

SINGLE

30

R-PSSO-G2

e3

1

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

AMPLIFIER

SILICON

3 MHz

NJVMJD32CT4G-VF01 by Onsemi

NJVMJD32CT4G-VF01

Onsemi

NJVMJD32CT4G-VF01 by Onsemi is a PNP power bipolar junction transistor (BJT) with a max collector-emitter voltage of 100V and a max collector current of 3A. It is commonly used as an amplifier in various applications due to its small outline package style, high transition frequency of 3MHz, and wide operating temperature range from -65°C to 150°C.

COLLECTOR

3 A

100 V

SINGLE

10

R-PSSO-G2

e3

1

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

SINGLE

30

AMPLIFIER

SILICON

3 MHz

TIP29CPBFREE by Central Semiconductor

TIP29CPBFREE

Central Semiconductor

TIP29CPBFREE by Central Semiconductor is a NPN BJT transistor with VCEsat of 0.7V, hFE of 15, and IC of 1A. Ideal for switching applications, it has a max power dissipation of 30W and operates b/w -65 to 150°C. Its through-hole terminals make it suitable for various electronic devices.

1 A

100 V

SINGLE

15

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

2 W

30 W

NO

MATTE TIN OVER NICKEL

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

.7 V

BD244CTU by Onsemi

BD244CTU

Onsemi

The Onsemi BD244CTU is a PNP BJT transistor with max VCEsat of 1.5V, IC of 6A, and hFE of 15. Ideal for switching applications, it operates b/w -65 to 150°C with a max VCE of 100V. Its package style is flange mount with through-hole terminals in a rectangular shape.

COLLECTOR

6 A

100 V

SINGLE

15

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

65 W

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

1.5 V