Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Add filters
All
Selected
NGD15N41CLT4
Onsemi
NGD15N41CLT4 by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 440V and a max gate-emitter voltage of 15V. It is designed for automotive ignition applications, featuring a built-in diode and resistor in a small outline package style. With a max power dissipation of 107W, it operates at temperatures up to 175 °C.
COLLECTOR
15 A
440 V
SINGLE WITH BUILT-IN DIODE AND RESISTOR
15000 ns
2.1 V
15 V
R-PSSO-G2
e0
1
2
175 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
235
N-CHANNEL
107 W
Not Qualified
7000 ns
Insulated Gate BIP Transistors
YES
TIN LEAD
GULL WING
SINGLE
AUTOMOTIVE IGNITION
SILICON
15500 ns
5700 ns
SIGC109T120R3
Infineon Technologies
Infineon's SIGC109T120R3 is an N-CHANNEL IGBT with a max voltage of 1200V and max current of 100A. Ideal for POWER CONTROL applications, it has a turn-off time of 610ns and turn-on time of 330ns. Suitable for surface mount with a max operating temp of 150°C.
100 A
1200 V
6.5 V
20 V
R-XUUC-N
150 Cel
UNSPECIFIED
UNCASED CHIP
NOT SPECIFIED
NO LEAD
UPPER
POWER CONTROL
610 ns
330 ns
STGB3NB60KDT4
STMicroelectronics
STGB3NB60KDT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max collector-emitter voltage of 600V, 10A collector current, and fast switching times (ton: 19ns, toff: 220ns). Ideal for applications in energy conversion and motor drives.
10 A
600 V
SINGLE WITH BUILT-IN DIODE
7 V
e3
68 W
MATTE TIN
220 ns
19 ns
STGB7NB60KDT4
STGB7NB60KDT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max collector-emitter voltage of 600V, 14A collector current, and operates at up to 150 °C. Ideal for applications requiring high efficiency in compact designs.
14 A
95 W
202 ns
21 ns
STGB7NB40LZT4
STGB7NB40LZT4 from STMicroelectronics is an N-channel IGBT designed for automotive ignition applications. It features a max collector-emitter voltage of 370 V, power dissipation of 100 W, and operates at up to 175 °C. This surface-mount device ensures efficient performance with built-in diode and resistor.
VOLTAGE CLAMPING
370 V
2.2 V
12 V
245
100 W
Matte Tin (Sn) - annealed
30
8000 ns
5400 ns
NGB18N40CLBT4
NGB18N40CLBT4 by Onsemi is an N-CHANNEL IGBT with built-in diode and resistor, ideal for automotive ignition applications. It has a max collector-emitter voltage of 430V, collector current of 18A, and power dissipation of 115W. This surface-mount transistor operates at temperatures up to 175 °C with rise time of 7000ns and fall time of 15000ns.
18 A
430 V
1.9 V
18 V
115 W
13000 ns
5200 ns
NGD18N40CLBT4
NGD18N40CLBT4 by Onsemi is an N-CHANNEL IGBT with built-in diode and resistor, ideal for automotive ignition applications. It has a max collector-emitter voltage of 430V, collector current of 15A, and power dissipation of 115W. The transistor operates at a max temperature of 175 °C with rise time of 7000ns and fall time of 15000ns.
STGB3NB60FDT4
STGB3NB60FDT4 from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 68W, and fast switching times (ton: 16.5ns, toff: 535ns). Its compact design ensures efficient performance in surface mount configurations.
6 A
5 V
MOTOR CONTROL
535 ns
16.5 ns
STGB20NB37LZT4
STGB20NB37LZT4 from STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max power dissipation of 200W, a collector current of 40A, and operates at up to 175 °C. Its compact surface mount design ensures efficient thermal management.
40 A
2 V
200 W
2900 ns
STGB12NB60KDT4
STGB12NB60KDT4 from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 125W, and fast switching times (toff: 461ns, ton: 39.5ns). Its compact design ensures efficient performance in surface mount configurations.
30 A
125 W
461 ns
39.5 ns
STGB10NB40LZT4
STGB10NB40LZT4 from STMicroelectronics is an N-channel IGBT ideal for automotive ignition applications. It features a max collector-emitter voltage of 380V, power dissipation of 150W, and operates at up to 175 °C. Its compact design ensures efficient performance in demanding environments.
20 A
380 V
150 W
12000 ns
1570 ns
NGD8201NT4
NGD8201NT4 by Onsemi is an N-CHANNEL IGBT with built-in diode and resistor, ideal for automotive ignition applications. It has a max collector-emitter voltage of 440V, collector current of 20A, and power dissipation of 115W. This surface-mount transistor operates at up to 175 °C with rise time of 14000ns and fall time of 7000ns.
2.3 V
14000 ns
18500 ns
6500 ns
IRG4BC30W-STRL
International Rectifier
IRG4BC30W-STRL by International Rectifier is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 600V and a Max Collector Current of 23A. It has a Nominal Turn Off Time of 300ns and Nominal Turn On Time of 41ns, making it ideal for POWER CONTROL applications requiring fast switching speeds. This IGBT comes in a RECTANGULAR package style with GULL WING terminals for surface mount installation.
LOW CONDUCTION LOSS
23 A
300 ns
41 ns
STGD10NC60HDT4
STGD10NC60HDT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 20A max collector current, and 62W max power dissipation. Ideal for power control applications, it features a built-in diode, 247ns turn-off time, and operates up to 150°C.
5.75 V
TO-252AA
260
62 W
247 ns
STGD3NB60HDT4
STGD3NB60HDT4 from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 50W, and fast switching times (ton: 25ns, toff: 168ns). This compact device ensures efficient performance in demanding environments.
50 W
168 ns
25 ns
STGB7NC60HDT4
STGB7NC60HDT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, 25A collector current, and a fast turn-off time of 221ns. Ideal for high-performance switching in compact designs.
25 A
TO-263AB
80 W
221 ns
25.5 ns
NGB8202NT4
NGB8202NT4 by Onsemi is an N-CHANNEL IGBT with built-in diode and resistor, ideal for automotive ignition applications. It has a max collector-emitter voltage of 440V, collector current of 20A, and power dissipation of 150W. This surface-mount transistor operates at temperatures up to 175 °C with rise time of 8000ns and fall time of 14000ns.
NGD8205NT4
NGD8205NT4 by Onsemi is an N-CHANNEL IGBT with 20A IC, 390V VCE, and 88W Pd. Ideal for automotive ignition applications due to its built-in diode and resistor. Features GULL WING terminals, RECTANGULAR package shape, and operates up to 175 °C.
390 V
88 W
IXGT16N170AH1
IXYS Corporation
IXGT16N170AH1 by IXYS Corp is an N-CHANNEL IGBT with 1700V max collector-emitter voltage, 16A max collector current, and 190W max power dissipation. Ideal for motor control applications due to its fast turn-off time of 330ns and built-in diode configuration.
16 A
1700 V
150 ns
TO-268AA
190 W
10
97 ns
STGB10NB60ST4
STGB10NB60ST4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, 29A collector current, and operates at up to 150 °C. Ideal for high-performance switching in industrial systems.
29 A
3100 ns
1160 ns
NGB18N40CLBT4G
NGB18N40CLBT4G by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 430V and a max gate-emitter voltage of 18V. It has a built-in diode and resistor, making it suitable for automotive ignition applications. This IGBT has a max power dissipation of 115W and operates at temperatures up to 175 °C.
TIN
NGB8202NT4G
NGB8202NT4G by Onsemi is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 440V and Max Collector Current of 20A. It features a built-in diode and resistor, making it ideal for POWER CONTROL applications. With a small outline package style and surface mount capability, it offers efficient performance up to 175°C operating temperature.
NGD8201NT4G
NGD8201NT4G by Onsemi is an N-CHANNEL IGBT with 20A IC, 400V VCE, and 125W power dissipation. Ideal for power control applications, it features a built-in diode and resistor in a small outline package suitable for surface mount technology.
400 V
STGD6NC60HT4
STGD6NC60HT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max collector-emitter voltage of 600V, 15A collector current, and operates at up to 150 °C. Ideal for applications requiring fast switching and high power dissipation.
TO-252
56 W
222 ns
17.3 ns
STGB6NC60HDT4
STGB6NC60HDT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 15A max collector current, and 56W max power dissipation. Ideal for power control applications due to its fast turn-off time of 222ns and built-in diode configuration. Suitable for surface mount with a small outline package style.
NGB8204NT4G
NGB8204NT4G by Onsemi is an N-CHANNEL IGBT with built-in diode and resistor, ideal for automotive ignition applications. It has a max collector-emitter voltage of 430V, collector current of 18A, and power dissipation of 115W. This surface-mount transistor operates at temperatures up to 175 °C with rise time of 7000ns and fall time of 15000ns.
IKD04N60R
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 8 A; Peak Reflow Temperature (C): 260;
8 A
5.7 V
75 W
342 ns
20 ns
STGB35N35LZT4
STGB35N35LZT4 from STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max collector-emitter voltage of 380V, 40A collector current, and operates at up to 175 °C. Its compact design ensures efficient performance in surface mount configurations.
TO-263AA
R-PDSO-G2
176 W
DUAL
37000 ns
7600 ns
STGB6NC60HT4
STGB6NC60HT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, 15A collector current, and fast switching times (toff: 222ns, ton: 17.3ns). Ideal for compact designs with its surface mount configuration.
FGB3040G2-F085
FGB3040G2-F085 by Onsemi is an N-CHANNEL IGBT with 7000 ns rise time, 15000 ns fall time, and 150 W power dissipation. Ideal for applications requiring a max collector-emitter voltage of 390 V, such as power electronics and motor control systems.
41 A
FGB3440G2-F085
FGB3440G2-F085 by Onsemi is an N-CHANNEL IGBT with 26.9A IC, 390V VCE, and 166W power dissipation. Ideal for applications requiring high power handling and temperature resistance up to 175°C. Suitable for surface mount assembly with a rise time of 7000ns and fall time of 15000ns.
26.9 A
166 W
STGSB200M65DF2AG
STGSB200M65DF2AG from STMicroelectronics is a high-performance N-channel IGBT designed for power control applications. It features a max VCEsat of 2.05V, supports up to 216A collector current, and operates in temperatures from -55 °C to 175 °C. Its compact surface mount design ensures efficient thermal management and reliability.
ISOLATED
216 A
650 V
R-PDSO-G9
9
-55 Cel
714 W
AEC-Q101; UL RECOGNIZED
412.6 ns
193.6 ns
2.05 V
NGTB03N60R2DT4G
NGTB03N60R2DT4G by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.1V and IC of 9A, ideal for power control applications. It features a built-in diode, small outline package style, and can operate at temperatures up to 175°C. This transistor has a turn-off time of 105ns and is designed for surface mount assembly with gull wing terminals.
9 A
49 W
105 ns
134 ns
STGB20NC60V
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 60 A; Transistor Application: POWER CONTROL;
60 A
280 ns
42.5 ns
2.5 V
STGB30H60DLFB
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 260 W; Maximum Collector Current (IC): 60 A; Maximum Operating Temperature: 175 Cel; Peak Reflow Temperature (C): NOT SPECIFIED;
260 W
STGB30M65DF2
STGB30M65DF2 by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 60A IC, and 2V VCEsat. Ideal for POWER CONTROL applications due to its built-in diode, low turn-off time of 310ns, and high power dissipation of 258W. Suitable for surface mount with gull wing terminals in a small outline package.
258 W
310 ns
47 ns
STGB7H60DF
STGB7H60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 1.95V, IC of 14A, and Pmax of 88W. Ideal for POWER CONTROL applications due to its fast turn-off time (263ns) and high operating temperature range (-55 to 175°C). The device comes in a small outline package with built-in diode for surface mount installation.
6.9 V
263 ns
42.8 ns
1.95 V
STGB5H60DF
STGB5H60DF from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 1.95V, supports up to 600V collector-emitter voltage, and operates in temperatures from -55 °C to 175 °C. Its compact surface mount design ensures versatility in various electronic systems.
BULK: 1000
39 ns
STGB30H60DFB
STGB30H60DFB by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 60A IC, and 223ns toff. Ideal for POWER CONTROL applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package.
223 ns
51.1 ns
NGTD14T65F2SWK
NGTD14T65F2SWK by Onsemi is an N-CHANNEL IGBT with 650V VCEsat, 20V VGE, and 175 °C max operating temp. Ideal for power control applications due to its single configuration and silicon transistor element material.
S-XUUC-N3
3
SQUARE
NGTD14T65F2WP
NGTD14T65F2WP by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2V and max collector-emitter voltage of 650V. It is designed for power control applications, operates b/w -55 to 175 °C, and has a gate-emitter threshold voltage of 6.5V.
NGTD17T65F2SWK
NGTD17T65F2SWK by Onsemi is an N-CHANNEL IGBT with 650V VCEsat, 20V VGE, and 175 °C max operating temp. Ideal for power control applications due to its single configuration and silicon transistor element material. Suitable for surface mount with a rectangular package style.
R-XUUC-N3
NGTD17T65F2WP
NGTD17T65F2WP by Onsemi is an N-CHANNEL IGBT with 650V VCEsat, 20V VGE, and 175 °C max operating temp. Ideal for power control applications due to its single configuration and silicon transistor element material. Suitable for surface mount with a rectangular package style.
NGTD20T120F2SWK
The Onsemi NGTD20T120F2SWK is an N-CHANNEL IGBT transistor with a max VCEsat of 2.4V and a max collector-emitter voltage of 1200V. Ideal for power control applications, it operates b/w -55 °C to 175°C, making it suitable for high-temperature environments. This single configuration transistor has a surface-mount package style and gate-emitter threshold voltage of 6.5V.
R-XUUC-N2
2.4 V
NGTD20T120F2WP
NGTD20T120F2WP by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 20V VGE, and 175 °C max operating temp. Ideal for power control applications due to its single configuration and silicon transistor element material.
NGTD21T65F2SWK
NGTD21T65F2SWK by Onsemi is an N-CHANNEL IGBT with 650V VCEsat, 1.9V, and 20V max gate-emitter voltage. Ideal for power control applications due to its single configuration and operating temperature range of -55 °C to 175°C. Suitable for surface mount installations with a square package shape.
NGTD21T65F2WP
NGTD21T65F2WP by Onsemi is an N-CHANNEL IGBT for POWER CONTROL applications. It features a Max VCEsat of 1.9V, Max VGE of 20V, and Max VCE of 650V. With a temperature range from -55 °C to 175°C, it's suitable for high-power electronic systems requiring efficient power switching.
NGTD23T120F2SWK
NGTD23T120F2SWK by Onsemi is an N-CHANNEL IGBT for POWER CONTROL applications. It features a Max VCEsat of 2.2V, Max VGE of 20V, and Max VCE of 1200V. With a temperature range from -55 °C to 175°C, it's suitable for high-power electronic systems requiring efficient power management.
© 2023 All rights reserved
