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YES Insulated Gate Bipolar Transistors (IGBT) 227

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGD3NB60SD-1 by STMicroelectronics

STGD3NB60SD-1

STMicroelectronics

STGD3NB60SD-1 by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 3A IC, and 48W Pd. It operates up to 175 °C making it ideal for power applications requiring high voltage switching in surface mount designs.

3 A

600 V

4.5 V

20 V

e3

1

175 Cel

260

N-CHANNEL

48 W

Insulated Gate BIP Transistors

YES

MATTE TIN

30

TIG066SS-TL-E by Onsemi

TIG066SS-TL-E

Onsemi

TIG066SS-TL-E by Onsemi is an N-CHANNEL IGBT with 400V max collector-emitter voltage, 6V max gate-emitter voltage, and 150 °C max operating temperature. It is surface mountable and has a tin/bismuth terminal finish. Ideal for power electronics applications requiring high-voltage switching capabilities.

400 V

1 V

6 V

e6

1

150 Cel

N-CHANNEL

Insulated Gate BIP Transistors

YES

Tin/Bismuth (Sn/Bi)

TIG052TS-TL-E by Onsemi

TIG052TS-TL-E

Onsemi

TIG052TS-TL-E by Onsemi is an N-CHANNEL IGBT suitable for surface mount applications. With a max operating temp of 150 °C, it offers a Vce of 400V and Vge of 6V. Ideal for power electronics in various industries due to its high voltage capabilities and compact design.

400 V

1 V

6 V

e6

1

150 Cel

N-CHANNEL

Insulated Gate BIP Transistors

YES

Tin/Bismuth (Sn/Bi)

STGDL6NC60DIT4 by STMicroelectronics

STGDL6NC60DIT4

STMicroelectronics

STGDL6NC60DIT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 13A max collector current, and 50W max power dissipation. Ideal for power control applications due to its fast turn-off time of 122ns and built-in diode configuration.

13 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-252

R-PSSO-G2

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

50 W

Not Qualified

Insulated Gate BIP Transistors

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

122 ns

10.5 ns

IKD03N60RF by Infineon Technologies

IKD03N60RF

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 53.6 W; Maximum Collector Current (IC): 5 A; Maximum Collector-Emitter Voltage: 600 V;

COLLECTOR

5 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-252

R-PSSO-G2

e3

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

53.6 W

Insulated Gate BIP Transistors

YES

TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

265 ns

18 ns

IKD04N60RF by Infineon Technologies

IKD04N60RF

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 8 A; Terminal Form: GULL WING;

COLLECTOR

8 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-252

R-PSSO-G2

e3

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

75 W

Insulated Gate BIP Transistors

YES

TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

216 ns

18 ns

STGD8NC60KT4 by STMicroelectronics

STGD8NC60KT4

STMicroelectronics

STGD8NC60KT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 15A IC, and 62W power dissipation. Suitable for surface mount applications, it operates up to 150 °C making it ideal for high-power electronic systems.

15 A

600 V

6.5 V

20 V

e3

1

150 Cel

N-CHANNEL

62 W

Insulated Gate BIP Transistors

YES

MATTE TIN

STGB30H60DF by STMicroelectronics

STGB30H60DF

STMicroelectronics

STGB30H60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.4V, IC of 60A, and Ptot of 260W. Ideal for power control applications, it operates b/w -40 to 175 °C with a VCEmax of 600V.

COLLECTOR

60 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

260 W

Insulated Gate BIP Transistors

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

234 ns

64 ns

2.4 V

IGC70T120T8RL by Infineon Technologies

IGC70T120T8RL

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; JESD-30 Code: R-XUUC-N5;

1200 V

SINGLE

6.3 V

20 V

R-XUUC-N5

1

5

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

2.07 V

IGC70T120T8RQ by Infineon Technologies

IGC70T120T8RQ

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Terminal Position: UPPER;

1200 V

SINGLE

6.3 V

20 V

R-XUUC-N5

1

5

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

2.42 V

STGB20H60DF by STMicroelectronics

STGB20H60DF

STMicroelectronics

STGB20H60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2V, IC of 40A, and Ptot of 167W. Ideal for power control applications, it has a toff of 259ns and ton of 55.9ns. Suitable for surface mount with a max VCE of 600V and operating temperature range from -55 °C to +175°C.

COLLECTOR

40 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

167 W

Insulated Gate BIP Transistors

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

259 ns

55.9 ns

2 V

STGB20V60DF by STMicroelectronics

STGB20V60DF

STMicroelectronics

STGB20V60DF by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 40A max collector current, and 20V max gate-emitter voltage. It operates at a max temperature of 175 °C, suitable for surface mount applications in various electronic devices.

40 A

600 V

20 V

e3

1

175 Cel

245

N-CHANNEL

Insulated Gate BIP Transistors

YES

MATTE TIN

SIGC61T60NCX1SA1 by Infineon Technologies

SIGC61T60NCX1SA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 75 A; Qualification: Not Qualified; Package Body Material: UNSPECIFIED;

75 A

600 V

SINGLE

R-XUUC-N4

1

4

150 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

205 ns

90 ns

SIGC14T60NCX1SA7 by Infineon Technologies

SIGC14T60NCX1SA7

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 20 A; Nominal Turn On Time (ton): 28 ns; Maximum Collector-Emitter Voltage: 600 V;

20 A

600 V

SINGLE

S-XUUC-N2

1

2

150 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

135 ns

28 ns

SIGC11T60NCX1SA2 by Infineon Technologies

SIGC11T60NCX1SA2

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 10 A; Nominal Turn Off Time (toff): 130 ns; Package Body Material: UNSPECIFIED;

10 A

600 V

SINGLE

S-XUUC-N2

1

2

150 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

130 ns

28 ns

SIGC121T60NR2CX1SA2 by Infineon Technologies

SIGC121T60NR2CX1SA2

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 150 A; Nominal Turn Off Time (toff): 260 ns; Package Style (Meter): UNCASED CHIP;

150 A

600 V

SINGLE

S-XUUC-N

1

150 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

260 ns

155 ns

SIGC156T60NR2CX1SA4 by Infineon Technologies

SIGC156T60NR2CX1SA4

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 200 A; No. of Elements: 1; Package Shape: SQUARE;

200 A

600 V

SINGLE

S-XUUC-N11

1

11

150 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

326 ns

229 ns

SIGC25T60SNCX1SA2 by Infineon Technologies

SIGC25T60SNCX1SA2

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 41 A; No. of Elements: 1; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

41 A

600 V

SINGLE

R-XUUC-N3

1

3

150 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

391 ns

78 ns

SIGC14T60SNCX1SA5 by Infineon Technologies

SIGC14T60SNCX1SA5

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 15 A; Terminal Form: NO LEAD; Maximum Operating Temperature: 150 Cel;

15 A

600 V

SINGLE

S-XUUC-N2

1

2

150 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

315 ns

54 ns

SIGC18T60SNCX1SA3 by Infineon Technologies

SIGC18T60SNCX1SA3

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 20 A; Terminal Form: NO LEAD; Qualification: Not Qualified;

20 A

600 V

SINGLE

S-XUUC-N2

1

2

150 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

313 ns

66 ns

SIGC81T60SNCX1SA1 by Infineon Technologies

SIGC81T60SNCX1SA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 100 A; Nominal Turn Off Time (toff): 540 ns; Nominal Turn On Time (ton): 115 ns;

100 A

600 V

SINGLE

S-XUUC-N10

1

10

150 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

540 ns

115 ns

SIGC42T60SNCX1SA2 by Infineon Technologies

SIGC42T60SNCX1SA2

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 50 A; No. of Terminals: 4; Transistor Application: POWER CONTROL;

50 A

600 V

SINGLE

S-XUUC-N4

1

4

150 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

460 ns

95 ns

SIGC11T60SNCX1SA1 by Infineon Technologies

SIGC11T60SNCX1SA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 10 A; JESD-30 Code: S-XUUC-N2; Transistor Application: POWER CONTROL;

10 A

600 V

SINGLE

S-XUUC-N2

1

2

150 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

224 ns

40 ns

SIGC12T60SNCX1SA3 by Infineon Technologies

SIGC12T60SNCX1SA3

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 10 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Qualification: Not Qualified;

10 A

600 V

SINGLE

S-XUUC-N2

1

2

150 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

329 ns

50 ns

SIGC07T60SNCX1SA3 by Infineon Technologies

SIGC07T60SNCX1SA3

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 6 A; JESD-30 Code: S-XUUC-N2; No. of Terminals: 2;

6 A

600 V

SINGLE

S-XUUC-N2

1

2

150 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

318 ns

41 ns

SIGC42T60UNX1SA1 by Infineon Technologies

SIGC42T60UNX1SA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 50 A; Transistor Element Material: SILICON; Package Style (Meter): UNCASED CHIP;

50 A

600 V

SINGLE

S-XUUC-N3

1

3

150 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

370 ns

79 ns

SGB06N60ATMA1 by Infineon Technologies

SGB06N60ATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 12 A; Package Body Material: PLASTIC/EPOXY; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

LOW CONDUCTION LOSS

COLLECTOR

12 A

600 V

SINGLE

TO-263AB

R-PSSO-G2

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

318 ns

41 ns

SGB20N60ATMA1 by Infineon Technologies

SGB20N60ATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 40 A; No. of Elements: 1; Nominal Turn Off Time (toff): 313 ns;

LOW CONDUCTION LOSS

COLLECTOR

40 A

600 V

SINGLE

TO-263AB

R-PSSO-G2

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

313 ns

66 ns

SGB02N120ATMA1 by Infineon Technologies

SGB02N120ATMA1

Infineon Technologies

SGB02N120ATMA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 6.2A. It has a nominal turn-off time of 375ns, making it suitable for power control applications requiring fast switching speeds. The transistor comes in a small outline package with gull wing terminals for surface mount assembly.

COLLECTOR

6.2 A

1200 V

SINGLE

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

375 ns

40 ns

SGD02N120BUMA1 by Infineon Technologies

SGD02N120BUMA1

Infineon Technologies

Infineon's SGD02N120BUMA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 6.2A max collector current. Ideal for power control applications, it has a turn-off time of 375ns and turn-on time of 40ns. This surface-mount transistor in a rectangular package is designed for high-power operations up to 150°C.

COLLECTOR

6.2 A

1200 V

SINGLE

TO-252AA

R-PSSO-G2

3

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

375 ns

40 ns

SGD06N60BUMA1 by Infineon Technologies

SGD06N60BUMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 12 A; Nominal Turn On Time (ton): 41 ns; Qualification: Not Qualified;

LOW CONDUCTION LOSS

COLLECTOR

12 A

600 V

SINGLE

TO-252AA

R-PSSO-G2

3

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

318 ns

41 ns

IGB03N120H2ATMA1 by Infineon Technologies

IGB03N120H2ATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 9.6 A; JESD-30 Code: R-PSSO-G2; No. of Terminals: 2;

COLLECTOR

9.6 A

1200 V

SINGLE

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

403 ns

16.1 ns

SKB15N60ATMA1 by Infineon Technologies

SKB15N60ATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 31 A; Qualification: Not Qualified; Maximum Collector-Emitter Voltage: 600 V;

LOW CONDUCTION LOSS

COLLECTOR

31 A

600 V

SINGLE WITH BUILT-IN DIODE

TO-263AB

R-PSSO-G2

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

315 ns

54 ns

SGB07N120ATMA1 by Infineon Technologies

SGB07N120ATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 16.5 A; Case Connection: COLLECTOR; Package Body Material: PLASTIC/EPOXY;

COLLECTOR

16.5 A

1200 V

SINGLE

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

520 ns

56 ns

SKB02N120ATMA1 by Infineon Technologies

SKB02N120ATMA1

Infineon Technologies

Infineon's SKB02N120ATMA1 is an N-CHANNEL IGBT with a 1200V max collector-emitter voltage and 6.2A max collector current. It has a built-in diode, 375ns turn-off time, and is ideal for power control applications requiring fast switching capabilities in surface-mount designs.

COLLECTOR

6.2 A

1200 V

SINGLE WITH BUILT-IN DIODE

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

375 ns

40 ns

SKB04N60ATMA1 by Infineon Technologies

SKB04N60ATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 9.4 A; Nominal Turn Off Time (toff): 368 ns; Maximum Operating Temperature: 150 Cel;

LOW CONDUCTION LOSS

COLLECTOR

9.4 A

600 V

SINGLE WITH BUILT-IN DIODE

TO-263AB

R-PSSO-G2

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

368 ns

38 ns

SKB02N60ATMA1 by Infineon Technologies

SKB02N60ATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 6 A; Package Body Material: PLASTIC/EPOXY; Additional Features: LOW CONDUCTION LOSS;

LOW CONDUCTION LOSS

COLLECTOR

6 A

600 V

SINGLE WITH BUILT-IN DIODE

TO-263AB

R-PSSO-G2

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

354 ns

34 ns

SGB10N60AATMA1 by Infineon Technologies

SGB10N60AATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 20 A; Qualification: Not Qualified; Package Style (Meter): SMALL OUTLINE;

LOW CONDUCTION LOSS

COLLECTOR

20 A

600 V

SINGLE

TO-263AB

R-PSSO-G2

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

224 ns

40 ns

SKB06N60HSATMA1 by Infineon Technologies

SKB06N60HSATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 12 A; JESD-30 Code: R-PSSO-G2; Nominal Turn Off Time (toff): 245 ns;

COLLECTOR

12 A

600 V

SINGLE WITH BUILT-IN DIODE

TO-263AB

R-PSSO-G2

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

GULL WING

SINGLE

NOT SPECIFIED

MOTOR CONTROL

SILICON

245 ns

23 ns

SKB06N60ATMA1 by Infineon Technologies

SKB06N60ATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 12 A; Qualification: Not Qualified; Nominal Turn Off Time (toff): 318 ns;

LOW CONDUCTION LOSS

COLLECTOR

12 A

600 V

SINGLE WITH BUILT-IN DIODE

TO-263AB

R-PSSO-G2

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

318 ns

41 ns

SGB15N120ATMA1 by Infineon Technologies

SGB15N120ATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 30 A; No. of Terminals: 2; Package Shape: RECTANGULAR;

COLLECTOR

30 A

1200 V

SINGLE

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

683 ns

68 ns

SKB10N60AATMA1 by Infineon Technologies

SKB10N60AATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 20 A; Additional Features: LOW CONDUCTION LOSS; Package Style (Meter): SMALL OUTLINE;

LOW CONDUCTION LOSS

COLLECTOR

20 A

600 V

SINGLE WITH BUILT-IN DIODE

TO-263AB

R-PSSO-G2

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

224 ns

40 ns

SKB15N60HSATMA1 by Infineon Technologies

SKB15N60HSATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 27 A; JESD-30 Code: R-PSSO-G2; Nominal Turn Off Time (toff): 252 ns;

COLLECTOR

27 A

600 V

SINGLE WITH BUILT-IN DIODE

TO-263AB

R-PSSO-G2

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

GULL WING

SINGLE

MOTOR CONTROL

SILICON

252 ns

27 ns

SIGC25T60NCX1SA5 by Infineon Technologies

SIGC25T60NCX1SA5

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 40 A; Qualification: Not Qualified; Nominal Turn On Time (ton): 29 ns;

40 A

600 V

SINGLE

R-XUUC-N3

1

3

150 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

135 ns

29 ns

SIGC18T60UNX1SA2 by Infineon Technologies

SIGC18T60UNX1SA2

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 20 A; No. of Elements: 1; Package Body Material: UNSPECIFIED;

20 A

600 V

SINGLE

R-XUUC-N2

1

2

150 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

100 ns

23.5 ns

SIGC07T60NCX1SA1 by Infineon Technologies

SIGC07T60NCX1SA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 8 A; Terminal Form: NO LEAD; No. of Elements: 1;

8 A

600 V

SINGLE

S-XUUC-N2

1

2

150 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

SIGC42T60NCX1SA5 by Infineon Technologies

SIGC42T60NCX1SA5

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 70 A; JESD-30 Code: S-XUUC-N4; No. of Elements: 1;

70 A

600 V

SINGLE

S-XUUC-N4

1

4

150 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

160 ns

55 ns

SIGC18T60NCX1SA6 by Infineon Technologies

SIGC18T60NCX1SA6

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 30 A; Package Shape: SQUARE; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

30 A

600 V

SINGLE

S-XUUC-N2

1

2

150 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

135 ns

29 ns