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YES Insulated Gate Bipolar Transistors (IGBT) 227

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
SIGC12T60NCX1SA5 by Infineon Technologies

SIGC12T60NCX1SA5

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 10 A; Nominal Turn Off Time (toff): 135 ns; Terminal Position: UPPER;

10 A

600 V

SINGLE

S-XUUC-N2

1

2

150 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

135 ns

29 ns

SIGC25T60UNX1SA1 by Infineon Technologies

SIGC25T60UNX1SA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 60 A; Maximum Collector-Emitter Voltage: 600 V; Maximum Operating Temperature: 150 Cel;

60 A

600 V

SINGLE

R-XUUC-N3

1

3

150 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

151 ns

29 ns

SIGC81T60NCX1SA3 by Infineon Technologies

SIGC81T60NCX1SA3

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 100 A; Package Style (Meter): UNCASED CHIP; Nominal Turn On Time (ton): 125 ns;

100 A

600 V

SINGLE

S-XUUC-N10

1

10

150 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

235 ns

125 ns

SGB30N60ATMA1 by Infineon Technologies

SGB30N60ATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 41 A; Maximum Collector-Emitter Voltage: 600 V; JESD-30 Code: R-PSSO-G2;

LOW CONDUCTION LOSS

COLLECTOR

41 A

600 V

SINGLE

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

391 ns

78 ns

IGC07T120T8LX1SA2 by Infineon Technologies

IGC07T120T8LX1SA2

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Package Body Material: UNSPECIFIED; JESD-30 Code: R-XUUC-N2;

1200 V

SINGLE

6.3 V

20 V

R-XUUC-N2

1

2

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

YES

NO LEAD

UPPER

NOT SPECIFIED

SILICON

2.02 V

IKB03N120H2ATMA1 by Infineon Technologies

IKB03N120H2ATMA1

Infineon Technologies

Infineon's IKB03N120H2ATMA1 is an N-CHANNEL IGBT with 1200V VCE, 9.6A IC, and 403ns toff. Ideal for power control applications, it features a built-in diode in a small outline package for surface mount assembly.

HIGH SPEED

COLLECTOR

9.6 A

1200 V

SINGLE WITH BUILT-IN DIODE

TO-220AB

R-PSSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

403 ns

16.1 ns

IGC15T65QEX1SA1 by Infineon Technologies

IGC15T65QEX1SA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: POWER CONTROL; Terminal Form: NO LEAD; No. of Elements: 1;

650 V

SINGLE

5.6 V

20 V

R-XUUC-N2

1

2

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

2.32 V

IGC18T120T8QX1SA1 by Infineon Technologies

IGC18T120T8QX1SA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum Operating Temperature: -40 Cel; Package Style (Meter): UNCASED CHIP; Maximum VCEsat: 2.42 V;

1200 V

SINGLE

6.3 V

20 V

R-XUUC-N2

1

2

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

2.42 V

IGC27T120T8QX1SA1 by Infineon Technologies

IGC27T120T8QX1SA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Operating Temperature: 175 Cel;

1200 V

SINGLE

6.3 V

20 V

R-XUUC-N2

1

2

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

2.42 V

IGC39T65QEX1SA1 by Infineon Technologies

IGC39T65QEX1SA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): UNCASED CHIP; No. of Terminals: 3; No. of Elements: 1;

650 V

SINGLE

5.6 V

20 V

R-XUUC-N3

1

3

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

2.22 V

IGC50T120T8RQX1SA1 by Infineon Technologies

IGC50T120T8RQX1SA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-XUUC-N2; Transistor Application: POWER CONTROL; Maximum VCEsat: 2.42 V;

1200 V

SINGLE

6.3 V

20 V

R-XUUC-N2

1

2

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

2.42 V

IGC54T65R3QEX1SA1 by Infineon Technologies

IGC54T65R3QEX1SA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Maximum Collector-Emitter Voltage: 650 V; Maximum VCEsat: 2.22 V;

650 V

SINGLE

5.6 V

20 V

R-XUUC-N9

1

9

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

2.22 V

IGC99T120T8RQX1SA1 by Infineon Technologies

IGC99T120T8RQX1SA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum Operating Temperature: -40 Cel; Package Shape: RECTANGULAR; JESD-30 Code: R-XUUC-N5;

1200 V

SINGLE

6.4 V

20 V

R-XUUC-N5

1

5

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

2.42 V

SIGC158T120R3LEX1SA2 by Infineon Technologies

SIGC158T120R3LEX1SA2

Infineon Technologies

N-CHANNEL; Surface Mount: YES; Maximum Collector Current (IC): 150 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Maximum Operating Temperature: 150 Cel; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

150 A

1200 V

6.5 V

20 V

150 Cel

NOT SPECIFIED

N-CHANNEL

Insulated Gate BIP Transistors

YES

NOT SPECIFIED

SIGC15T60EX1SA1 by Infineon Technologies

SIGC15T60EX1SA1

Infineon Technologies

N-CHANNEL; Surface Mount: YES; Maximum Collector Current (IC): 30 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Gate-Emitter Voltage: 20 V;

30 A

600 V

6.5 V

20 V

150 Cel

NOT SPECIFIED

N-CHANNEL

Insulated Gate BIP Transistors

YES

NOT SPECIFIED

SIGC39T60EX1SA3 by Infineon Technologies

SIGC39T60EX1SA3

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Maximum Gate-Emitter Voltage: 20 V; Maximum VCEsat: 1.85 V;

600 V

SINGLE

6.5 V

20 V

R-XUUC-N3

1

3

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1.85 V

SIGC76T65R3EX1SA1 by Infineon Technologies

SIGC76T65R3EX1SA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: NO LEAD; Maximum Operating Temperature: 175 Cel; Minimum Operating Temperature: -40 Cel;

650 V

SINGLE

6.4 V

20 V

R-XUUC-N9

1

9

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Insulated Gate BIP Transistors

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1.2 V

FS300R17OE4BOSA1 by Infineon Technologies

FS300R17OE4BOSA1

Infineon Technologies

N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 1850 W; Maximum Collector Current (IC): 450 A; Minimum Operating Temperature: -40 Cel;

ISOLATED

450 A

1700 V

3 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR

6.4 V

20 V

R-XUFM-X29

6

29

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

1850 W

UL APPROVED

YES

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

910 ns

385 ns

2.3 V

STGB40V60F by STMicroelectronics

STGB40V60F

STMicroelectronics

STGB40V60F by STMicroelectronics is an N-CHANNEL IGBT transistor with 600V VCE, 80A IC, and 283W power dissipation. Ideal for power control applications, it has a toff of 241ns and ton of 73ns.

COLLECTOR

80 A

600 V

SINGLE

7 V

20 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

283 W

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

241 ns

73 ns

2.3 V

STGB20V60F by STMicroelectronics

STGB20V60F

STMicroelectronics

STGB20V60F by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.2V, IC of 20A, and Ptot of 167W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 173ns and turn-on time (ton) of 49ns. Suitable for surface mount with a max operating temperature of 175 °C.

COLLECTOR

20 A

600 V

SINGLE

7 V

20 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

167 W

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

173 ns

49 ns

2.2 V

STGB30V60F by STMicroelectronics

STGB30V60F

STMicroelectronics

STGB30V60F by STMicroelectronics is an N-CHANNEL IGBT transistor with VCEsat of 2.3V and IC of 60A, ideal for POWER CONTROL applications. It has a toff of 225ns, ton of 59ns, and can handle up to 260W power dissipation. Suitable for surface mount with operating temperature range from -55°C to 175°C.

COLLECTOR

60 A

600 V

SINGLE

7 V

20 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

260 W

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

225 ns

59 ns

2.3 V

IGC13T120T8LX1SA1 by Infineon Technologies

IGC13T120T8LX1SA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 175 Cel; Maximum Gate-Emitter Voltage: 20 V; Maximum Collector-Emitter Voltage: 1200 V;

1200 V

SINGLE

6.3 V

20 V

R-XUUC-N2

1

2

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

2.07 V

SIGC14T60SNCX1SA4 by Infineon Technologies

SIGC14T60SNCX1SA4

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 15 A; Terminal Position: UPPER; Nominal Turn Off Time (toff): 315 ns;

15 A

600 V

SINGLE

S-XUUC-N2

1

2

UNSPECIFIED

SQUARE

UNCASED CHIP

N-CHANNEL

YES

NO LEAD

UPPER

POWER CONTROL

SILICON

315 ns

54 ns

SIGC42T60NCX1SA4 by Infineon Technologies

SIGC42T60NCX1SA4

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 70 A; Terminal Position: UPPER; JESD-30 Code: S-XUUC-N4;

70 A

600 V

SINGLE

S-XUUC-N4

1

4

UNSPECIFIED

SQUARE

UNCASED CHIP

N-CHANNEL

YES

NO LEAD

UPPER

POWER CONTROL

SILICON

160 ns

55 ns

STGB7NB60HDT4 by STMicroelectronics

STGB7NB60HDT4

STMicroelectronics

STGB7NB60HDT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 14A max collector current, and 80W max power dissipation. Ideal for motor control applications due to its built-in diode, fast turn-off time of 220ns, and small outline package style.

COLLECTOR

14 A

600 V

SINGLE WITH BUILT-IN DIODE

5 V

20 V

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

80 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

MOTOR CONTROL

SILICON

220 ns

63 ns

STGB10NB37LZ by STMicroelectronics

STGB10NB37LZ

STMicroelectronics

STGB10NB37LZ by STMicroelectronics is an N-CHANNEL IGBT with 375V max collector-emitter voltage, 20A max collector current, and 125W max power dissipation. It's designed for automotive ignition applications due to its built-in diode and resistor, small outline package style, and matte tin terminal finish.

VOLTAGE CLAMPING

COLLECTOR

20 A

375 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2.4 V

TO-263AB

R-PSSO-G2

e3

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

125 W

Not Qualified

Insulated Gate BIP Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

AUTOMOTIVE IGNITION

SILICON

17800 ns

860 ns

STGB20N40LZ by STMicroelectronics

STGB20N40LZ

STMicroelectronics

STGB20N40LZ IGBT from STMicroelectronics features a max VCEsat of 1.8V, supports automotive ignition applications, and operates at up to 175 °C. It offers a max collector current of 25A and includes built-in TVS diode for enhanced protection. Ideal for compact designs with its surface mount configuration.

COLLECTOR

25 A

425 V

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

2.5 V

16 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

150 W

AEC-Q101

YES

GULL WING

SINGLE

NOT SPECIFIED

AUTOMOTIVE IGNITION

SILICON

8200 ns

5200 ns

1.8 V

STGB20NB32LZ by STMicroelectronics

STGB20NB32LZ

STMicroelectronics

STGB20NB32LZ from STMicroelectronics is an N-channel IGBT designed for automotive ignition applications. It features a max collector-emitter voltage of 325 V, power dissipation of 150 W, and operates at up to 175 °C. Its compact surface mount design ensures efficient performance in demanding environments.

COLLECTOR

40 A

325 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2 V

TO-263

R-PSSO-G2

e3

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

150 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

15900 ns

2900 ns

STGB20NB37LZ by STMicroelectronics

STGB20NB37LZ

STMicroelectronics

STGB20NB37LZ from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector current of 40 A, power dissipation of 150 W, and operates up to 175 °C. Its compact surface mount design ensures versatility in various electronic systems.

ESD PROTECTED

COLLECTOR

40 A

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2 V

TO-263AB

R-PSSO-G2

e3

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

150 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

15000 ns

2900 ns

MGB15N40CLT4 by Onsemi

MGB15N40CLT4

Onsemi

MGB15N40CLT4 by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 440V and a max gate-emitter voltage of 22V. It is designed for automotive ignition applications, featuring a built-in diode and resistor in a surface-mount package with GULL WING terminals. The transistor has a nominal turn-off time of 20500ns and can handle a max collector current of 15A.

VOLTAGE CLAMPING

COLLECTOR

15 A

440 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2.1 V

22 V

R-PSSO-G2

e0

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

136 W

Not Qualified

Insulated Gate BIP Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

SINGLE

30

AUTOMOTIVE IGNITION

SILICON

20500 ns

6000 ns

IRG4BC20UD-STRL by International Rectifier

IRG4BC20UD-STRL

International Rectifier

IRG4BC20UD-STRL by International Rectifier is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max gate-emitter voltage of 20V. It has a nominal turn-off time of 320ns, making it suitable for power control applications requiring fast switching speeds. This IGBT comes in a small outline package with gull wing terminals for surface mount assembly.

COLLECTOR

13 A

600 V

SINGLE WITH BUILT-IN DIODE

170 ns

6 V

20 V

R-PSSO-G2

e0

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

225

N-CHANNEL

60 W

Not Qualified

Insulated Gate BIP Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

SINGLE

30

POWER CONTROL

SILICON

320 ns

55 ns

IRG4BC20UD-STRR by International Rectifier

IRG4BC20UD-STRR

International Rectifier

IRG4BC20UD-STRR by International Rectifier is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 13A max collector current. It has a built-in diode, 170ns fall time, and 320ns turn off time. Ideal for power control applications requiring high power dissipation up to 60W in surface mount configurations.

COLLECTOR

13 A

600 V

SINGLE WITH BUILT-IN DIODE

170 ns

6 V

20 V

R-PSSO-G2

e0

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

225

N-CHANNEL

60 W

Not Qualified

Insulated Gate BIP Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

SINGLE

30

POWER CONTROL

SILICON

320 ns

55 ns

STGB3NB60SDT4 by STMicroelectronics

STGB3NB60SDT4

STMicroelectronics

STGB3NB60SDT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 6A max collector current, and 70W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast turn-off time of 4800ns.

6 A

600 V

SINGLE WITH BUILT-IN DIODE

5 V

20 V

TO-263AB

R-PSSO-G2

e3

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

70 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

MOTOR CONTROL

SILICON

4800 ns

275 ns

NGB8206N by Onsemi

NGB8206N

Onsemi

NGB8206N by Onsemi is an N-CHANNEL IGBT with built-in diode and resistor, ideal for automotive ignition applications. It features a max collector-emitter voltage of 390V, max gate-emitter voltage of 15V, and max collector current of 20A. With a package style of SMALL OUTLINE and peak reflow temperature of 235 °C, it offers reliable performance in high-power automotive systems.

COLLECTOR

20 A

390 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

14000 ns

2.1 V

15 V

R-PSSO-G2

e0

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

150 W

Not Qualified

8000 ns

Insulated Gate BIP Transistors

YES

TIN LEAD

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

18500 ns

6500 ns

STGB14NC60KT4 by STMicroelectronics

STGB14NC60KT4

STMicroelectronics

STGB14NC60KT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, 25 A collector current, and operates at up to 150 °C. Its compact surface mount design ensures versatility in various electronic systems.

25 A

600 V

SINGLE

6.5 V

20 V

R-PDSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

80 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

DUAL

POWER CONTROL

SILICON

340 ns

31.5 ns

NGB8206NTF4 by Onsemi

NGB8206NTF4

Onsemi

NGB8206NTF4 by Onsemi is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 390V and a Max Collector Current of 20A. It features a built-in diode and resistor, making it ideal for AUTOMOTIVE IGNITION applications. The transistor has a Nominal Turn Off Time of 18500ns and Nominal Turn On Time of 6500ns, suitable for fast switching requirements in automotive systems.

COLLECTOR

20 A

390 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

R-PSSO-G2

e0

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

Tin/Lead (Sn80Pb20)

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

18500 ns

6500 ns

STGD10NC60KT4 by STMicroelectronics

STGD10NC60KT4

STMicroelectronics

STGD10NC60KT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, a turn-off time of 242 ns, and can handle up to 20 A. Ideal for compact designs with its surface mount configuration.

ULTRA FAST

20 A

600 V

SINGLE

6.5 V

20 V

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

60 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

242 ns

23 ns

STGBL6NC60DT4 by STMicroelectronics

STGBL6NC60DT4

STMicroelectronics

STGBL6NC60DT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max collector-emitter voltage of 600V, 14A collector current, and a fast turn-off time of 122ns. Ideal for applications in energy conversion and motor drives.

14 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

56 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

POWER CONTROL

SILICON

122 ns

10.5 ns

STGDL6NC60DT4 by STMicroelectronics

STGDL6NC60DT4

STMicroelectronics

STGDL6NC60DT4 by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max collector-emitter voltage of 600V, a nominal turn-off time of 122ns, and operates at up to 150 °C. Its compact surface mount design ensures efficient thermal management.

13 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-252AA

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

50 W

Not Qualified

Insulated Gate BIP Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

POWER CONTROL

SILICON

122 ns

10.5 ns

NGTB35N60FL2WG by Onsemi

NGTB35N60FL2WG

Onsemi

NGTB35N60FL2WG by Onsemi is an N-CHANNEL IGBT with 600V VCE, 70A IC, and 300W Pd. It operates up to 175°C making it ideal for high-power applications like motor drives and inverters. With surface mount capability and a gate-emitter threshold voltage of 6.5V, it offers efficient power management in various industrial settings.

70 A

600 V

6.5 V

20 V

e3

175 Cel

N-CHANNEL

300 W

Insulated Gate BIP Transistors

YES

Matte Tin (Sn) - annealed

STGD19N40LZ by STMicroelectronics

STGD19N40LZ

STMicroelectronics

STGD19N40LZ by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 1.85V, IC of 25A, and Ptot of 125W. It is used for power control applications in a small outline package with a max operating temperature of 175°C.

COLLECTOR

25 A

425 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2.6 V

16 V

TO-252

R-PSSO-G2

e3

1

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

125 W

AEC-Q101

YES

MATTE TIN

GULL WING

SINGLE

30

POWER CONTROL

SILICON

22200 ns

4450 ns

1.85 V

IKD06N60R by Infineon Technologies

IKD06N60R

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 12 A; Transistor Application: POWER CONTROL;

COLLECTOR

12 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-252

R-PSSO-G2

e3

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

100 W

Not Qualified

Insulated Gate BIP Transistors

YES

TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

335 ns

22 ns

IKD10N60R by Infineon Technologies

IKD10N60R

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 20 A; JESD-609 Code: e3;

COLLECTOR

20 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-252

R-PSSO-G2

e3

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

150 W

Not Qualified

Insulated Gate BIP Transistors

YES

TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

428 ns

24 ns

IKD15N60R by Infineon Technologies

IKD15N60R

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 30 A; Maximum Operating Temperature: 175 Cel;

30 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-252

R-PSSO-G2

e3

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

YES

TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

430 ns

26 ns

STGB30NC60KT4 by STMicroelectronics

STGB30NC60KT4

STMicroelectronics

STGB30NC60KT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, 60 A collector current, and fast switching times (ton: 41 ns, toff: 290 ns). Ideal for high-performance power management in compact designs.

60 A

600 V

SINGLE

6.5 V

20 V

TO-263AB

R-PSSO-G2

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

185 W

Not Qualified

Insulated Gate BIP Transistors

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

290 ns

41 ns

STGB30NC60WT4 by STMicroelectronics

STGB30NC60WT4

STMicroelectronics

STGB30NC60WT4 from STMicroelectronics is a robust N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 200W, and operates at up to 150 °C. Its compact surface mount design ensures efficient performance in various electronic systems.

60 A

600 V

SINGLE

5.75 V

20 V

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

200 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

MOTOR CONTROL

SILICON

189 ns

42.5 ns

STGB20NC60VT4 by STMicroelectronics

STGB20NC60VT4

STMicroelectronics

STGB20NC60VT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, a power dissipation of 200 W, and operates at up to 150 °C. Ideal for high-performance switching in industrial systems.

60 A

600 V

SINGLE

5.75 V

20 V

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

200 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

POWER CONTROL

SILICON

280 ns

42.5 ns

NGB15N41CLT4 by Onsemi

NGB15N41CLT4

Onsemi

NGB15N41CLT4 by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 440V and max gate-emitter voltage of 15V. It is designed for automotive ignition applications, featuring a built-in diode and resistor in a small outline package style. With a max power dissipation of 107W, it operates at temperatures up to 175 °C.

COLLECTOR

15 A

440 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

15000 ns

2.1 V

15 V

R-PSSO-G2

e0

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

107 W

Not Qualified

7000 ns

Insulated Gate BIP Transistors

YES

TIN LEAD

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

15500 ns

5700 ns