Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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NGTD23T120F2WP
Onsemi
NGTD23T120F2WP by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 20V VGE, and 175 °C max operating temp. Ideal for power control applications due to its single configuration and silicon transistor element material. Suitable for surface mount with rectangular package style.
1200 V
SINGLE
6.5 V
20 V
R-XUUC-N2
1
2
175 Cel
-55 Cel
UNSPECIFIED
RECTANGULAR
UNCASED CHIP
NOT SPECIFIED
N-CHANNEL
YES
NO LEAD
UPPER
POWER CONTROL
SILICON
2.2 V
NGTD28T65F2WP
NGTD28T65F2WP by Onsemi is an N-CHANNEL IGBT for MOTOR CONTROL applications. It features a Max VCEsat of 2V, Max VGE of 20V, and Max VCE of 650V. With a temperature range from -55 °C to 175°C, this surface-mount transistor is ideal for high-power motor control systems.
650 V
R-XUUC-N3
3
MOTOR CONTROL
2 V
STGB4M65DF2
STMicroelectronics
STGB4M65DF2 from STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.1V, supports up to 68W power dissipation, and operates b/w -55 °C to 175 °C. Ideal for efficient switching in compact designs.
COLLECTOR
8 A
SINGLE WITH BUILT-IN DIODE
7 V
TO-263AB
R-PSSO-G2
PLASTIC/EPOXY
SMALL OUTLINE
68 W
GULL WING
296 ns
19.6 ns
2.1 V
FGD2736G3-F085
Onsemi's FGD2736G3-F085 is an N-CHANNEL IGBT with built-in TVS diode and resistor, ideal for automotive ignition applications. It has a max VCEsat of 1.65V, collector current of 21A, and can operate in temperatures ranging from -40 to 175 °C. This surface-mount transistor features a rectangular package shape with gull wing terminals.
21 A
360 V
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR
15000 ns
10 V
TO-252AA
e3
-40 Cel
260
150 W
7000 ns
Matte Tin (Sn) - annealed
30
AUTOMOTIVE IGNITION
30000 ns
6300 ns
11000 ns
3900 ns
1.65 V
STGB3HF60HD
STGB3HF60HD from STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.95V, 600V collector-emitter voltage, and operates at temperatures up to 150 °C. Its compact surface mount design ensures efficient performance in various electronic systems.
7.5 A
600 V
5.75 V
150 Cel
38 W
140 ns
15 ns
2.95 V
STGB30H60DLLFBAG
STGB30H60DLLFBAG from STMicroelectronics is a robust N-channel IGBT designed for automotive ignition applications. It features a max VCEsat of 2.15V, supports up to 60A collector current, and operates within -55 °C to 175 °C. Its compact surface mount design ensures efficient thermal management and reliability.
60 A
2.5 V
260 W
AEC-Q101
370 ns
2.15 V
STGB25N40LZAG
STGB25N40LZAG by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 1.25V, IC of 25A, and Ptot of 150W. Ideal for automotive ignition applications due to its built-in TVS diode and resistor. Operates b/w -55°C to 175°C temperature range, meeting AEC-Q101 standards.
25 A
435 V
16 V
14500 ns
4560 ns
1.25 V
IRG4BC30S-STRLP
Infineon Technologies
IRG4BC30S-STRLP by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 600V and a Max Collector Current of 34A. It has a Nominal Turn Off Time of 1550ns and Nominal Turn On Time of 40ns, making it ideal for POWER CONTROL applications requiring fast switching speeds. This IGBT comes in a RECTANGULAR package style with GULL WING terminals, suitable for surface mount assembly in various electronic devices.
34 A
1550 ns
40 ns
IKD06N60RAATMA2
IKD06N60RAATMA2 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 12A max collector current. It has a turn-off time of 335ns and turn-on time of 22ns, making it suitable for applications requiring fast switching such as motor drives and power supplies. AEC-Q101 certified, it comes in a small outline package with gull wing terminals for surface mount assembly.
LOW CONDUCTION LOSS
12 A
TO-252
GENERAL PURPOSE
335 ns
22 ns
IKD06N60RFAATMA1
IKD06N60RFAATMA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2.5V and a max collector-emitter voltage of 600V. It is used for power control applications and has a small outline package style, making it suitable for surface mount designs.
5.7 V
100 W
149 ns
17 ns
IKD10N60RAATMA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 20 A; Transistor Application: GENERAL PURPOSE; Terminal Form: GULL WING;
20 A
428 ns
24 ns
IKD10N60RFAATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 20 A; Peak Reflow Temperature (C): NOT SPECIFIED;
198 ns
27 ns
IKD03N60RFAATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 5 A; Terminal Position: SINGLE; Peak Reflow Temperature (C): NOT SPECIFIED;
5 A
265 ns
18 ns
IKD04N60RFAATMA1
IKD04N60RFAATMA1 by Infineon is an N-CHANNEL IGBT with 600V max. collector-emitter voltage and 8A max. collector current. It has a built-in diode, 216ns turn-off time, and is ideal for power control applications requiring fast switching speeds in automotive electronics (AEC-Q101 compliant).
216 ns
IKB20N60TAATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 156 W; Maximum Collector Current (IC): 40 A; JEDEC-95 Code: TO-263AB;
40 A
156 W
287 ns
35 ns
2.05 V
SIGC08T60EX1SA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 15 A; Transistor Element Material: SILICON; Package Body Material: UNSPECIFIED;
15 A
SIGC100T60R3EX1SA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 200 A; Peak Reflow Temperature (C): NOT SPECIFIED; No. of Elements: 1;
200 A
R-XUUC-N10
10
SIGC10T60EX1SA5
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 20 A; Maximum Collector-Emitter Voltage: 600 V; Transistor Application: POWER CONTROL;
SIGC54T60R3EX1SA3
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 100 A; Maximum Operating Temperature: 175 Cel; Terminal Position: UPPER;
100 A
SIGC76T60R3EX1SA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): UNCASED CHIP; No. of Elements: 1; Package Shape: RECTANGULAR;
IGC27T120T8LX1SA2
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; Minimum Operating Temperature: -40 Cel; Terminal Form: NO LEAD;
6.3 V
2.07 V
IGC36T120T8LX1SA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-XUUC-N3; Transistor Element Material: SILICON; Minimum Operating Temperature: -40 Cel;
IGC70T120T8RQX1SA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: UPPER; Package Body Material: UNSPECIFIED; No. of Elements: 1;
R-XUUC-N5
5
2.42 V
IGC99T120T8RLX1SA3
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): UNCASED CHIP; Terminal Position: UPPER; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
6.4 V
1.97 V
IGC11T120T8LX1SA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum Operating Temperature: -40 Cel; Maximum VCEsat: 2.07 V; Maximum Gate-Emitter Threshold Voltage: 6.3 V;
IGC18T120T8LX1SA2
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 175 Cel; Transistor Element Material: SILICON; No. of Elements: 1;
IKD06N60RAATMA1
IKD06N60RAATMA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 12A max collector current. It has a turn-off time of 335ns and turn-on time of 22ns, suitable for applications requiring fast switching such as motor drives and power supplies.
SIGC15T60EX1SA4
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 30 A; No. of Terminals: 2; Terminal Position: UPPER;
30 A
SIGC28T60SEX1SA2
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 50 A; Transistor Application: POWER CONTROL; No. of Terminals: 3;
50 A
STGB30H65FB
STGB30H65FB from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2V, supports up to 60A collector current, and operates in temperatures from -55 °C to 175 °C. Its compact surface mount design ensures versatility in various electronic systems.
223 ns
51.1 ns
AIHD04N60RATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 8 A; Reference Standard: AEC-Q101;
75 W
342 ns
20 ns
AIHD04N60RFATMA1
AIHD06N60RATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 12 A; JEDEC-95 Code: TO-252;
AIHD06N60RFATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 12 A; Minimum Operating Temperature: -40 Cel;
AIHD10N60RATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 20 A; Package Body Material: PLASTIC/EPOXY;
AIHD10N60RFATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 20 A; Minimum Operating Temperature: -40 Cel;
AIHD15N60RATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 30 A; No. of Elements: 1;
250 W
TIN
430 ns
26 ns
AIHD03N60RFATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 53.6 W; Maximum Collector Current (IC): 6.5 A; Maximum VCEsat: 2.5 V;
6.5 A
53.6 W
PCFG40T65SQF
PCFG40T65SQF by Onsemi is an N-CHANNEL IGBT for POWER CONTROL applications. It features a Max VCEsat of 2.1V, Max VGE of 20V, and Max VCE of 650V. With a temperature range from -40 to 175 °C, this SQUARE-shaped chip is ideal for high-power electronic systems requiring efficient power management.
S-XUUC-N2
SQUARE
PCFG75T65MQF
PCFG75T65MQF by Onsemi is an N-CHANNEL IGBT for POWER CONTROL applications. With a max VCEsat of 1.9V, it operates at -55 to 175 °C and handles up to 650V/150A. This surface-mount chip has a gate-emitter voltage of 20V and gate-emitter threshold voltage of 6.4V, making it suitable for high-power systems.
150 A
R-XUUC-N
1.9 V
NXH25T120L2Q1PG
NXH25T120L2Q1PG by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 25A IC, and 77ns ton. Ideal for POWER CONTROL applications, it has a max power dissipation of 81W and operates b/w -40 to 150 °C.
ISOLATED
COMPLEX
R-XUFM-X44
12
44
FLANGE MOUNT
81 W
551 ns
77 ns
NXH25T120L2Q1PTG
NXH25T120L2Q1PTG by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 25A IC, and 81W power dissipation. Ideal for power control applications, it features a turn-off time of 551ns and operates b/w -40 to 150 °C.
STGB19N40LZ
STGB19N40LZ by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 1.85V, supports up to 150W power dissipation, and operates b/w -55 °C to 175 °C. Its compact surface mount design ensures efficient thermal management.
BULK: 1000
425 V
SINGLE WITH BUILT-IN DIODE AND RESISTOR
2.6 V
245
MATTE TIN
22200 ns
4450 ns
1.85 V
FGD3440G2-F085V
Onsemi's FGD3440G2-F085V is an N-CHANNEL IGBT with built-in TVS diode and resistor, ideal for automotive ignition applications. It features a max VCEsat of 1.75V, rise time of 7ns, and power dissipation of 166W. With a max operating temperature of 175 °C, it offers reliable performance in harsh environments.
26.9 A
40 V
14 V
166 W
7 ns
7.6 ns
11 ns
3 ns
1.75 V
NVG800A75L4DSC
NVG800A75L4DSC by Onsemi is an N-CHANNEL IGBT with 750V VCE, 800A IC, and 1.55V VCEsat. Ideal for power control applications, it features a series connected configuration with built-in diode and operates b/w -40 to 175°C.
800 A
750 V
SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE
6.2 V
R-XXMA-X15
15
MICROELECTRONIC ASSEMBLY
855 ns
347 ns
1.55 V
FGD2736G3-F085V
Onsemi's FGD2736G3-F085V is an N-CHANNEL IGBT with built-in TVS diode and resistor, ideal for automotive ignition applications. It features a max VCEsat of 1.65V, collector current of 37.5A, and operating temperature range from -40 to 175 °C. This surface-mount transistor has a package style of small outline and meets AEC-Q101 standards.
37.5 A
330 V
FGD3N60LSDTM-T
FGD3N60LSDTM-T by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 1.5V and a max IC of 6A. Ideal for MOTOR CONTROL applications, it has a turn-off time of 1420ns and operates at temperatures ranging from -55 to 150 °C.
6 A
5 V
25 V
40 W
1420 ns
85 ns
1.5 V
IXGA20N120A3-TRL
IXYS Corporation
IXGA20N120A3-TRL by IXYS Corp is a N-CHANNEL IGBT with VCEsat of 2.5V, IC of 40A, and Pmax of 180W. Ideal for POWER CONTROL applications due to its fast ton of 66ns and high VCE rating of 1200V. This surface mount device operates b/w -55 to +150 °C for efficient power management.
TO-263AA
180 W
1530 ns
66 ns
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