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YES Insulated Gate Bipolar Transistors (IGBT) 227

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IXGA30N120B3-TRL by IXYS Corporation

IXGA30N120B3-TRL

IXYS Corporation

IXGA30N120B3-TRL by IXYS is an N-CHANNEL IGBT with 1200V VCE, 60A IC, and 300W power dissipation. Ideal for power control applications, it has a fast turn-off time of 331ns and low VCEsat of 3.5V. Suitable for surface mount with GULL WING terminals in a RECTANGULAR package.

LOW CONDUCTION LOSS

COLLECTOR

60 A

1200 V

SINGLE

380 ns

5 V

20 V

TO-263AB

R-PSSO-G2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

300 W

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

580 ns

331 ns

53 ns

3.5 V

IXGT6N170AHV-TRL by IXYS Corporation

IXGT6N170AHV-TRL

IXYS Corporation

IXGT6N170AHV-TRL by IXYS Corp is an N-CHANNEL IGBT with VCEsat of 7V, IC of 6A, and Pmax of 75W. Ideal for POWER CONTROL applications, it operates b/w -55 to 150 °C and features a fast turn-off time of 271ns.

COLLECTOR

6 A

1700 V

SINGLE

5 V

20 V

TO-268AA

R-PSSO-G2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

75 W

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

271 ns

91 ns

7 V

IXYY8N90C3-TRL by IXYS Corporation

IXYY8N90C3-TRL

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 20 A; Maximum Gate-Emitter Voltage: 20 V;

COLLECTOR

20 A

900 V

SINGLE

6 V

20 V

TO-252AA

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

125 W

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

238 ns

39 ns

3 V

IGC41T120T8QX7SA2 by Infineon Technologies

IGC41T120T8QX7SA2

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: POWER CONTROL; Maximum Collector-Emitter Voltage: 1200 V; Maximum Operating Temperature: 175 Cel;

1200 V

SINGLE

6.3 V

20 V

R-XUUC-N2

1

2

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

2.42 V

IGC50T120T8RLX7SA2 by Infineon Technologies

IGC50T120T8RLX7SA2

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum VCEsat: 2.07 V; Maximum Operating Temperature: 175 Cel; Maximum Gate-Emitter Threshold Voltage: 6.3 V;

1200 V

SINGLE

6.3 V

20 V

R-XUUC-N3

1

3

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

2.07 V

ISL9V2040D3STV by Onsemi

ISL9V2040D3STV

Onsemi

ISL9V2040D3STV by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.9V and a collector-emitter voltage of 390V. Ideal for automotive ignition applications, it has a built-in diode and resistor, GULL WING terminals, and can operate b/w -40 to 175 °C.

COLLECTOR

10 A

390 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2.2 V

12 V

TO-252AA

R-PSSO-G2

1

2

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

130 W

YES

GULL WING

SINGLE

NOT SPECIFIED

AUTOMOTIVE IGNITION

SILICON

6000 ns

2780 ns

1.9 V

6MS24017P43W41646NOSA1 by Infineon Technologies

6MS24017P43W41646NOSA1

Infineon Technologies

6MS24017P43W41646NOSA1 by Infineon Technologies is an N-Channel IGBT with 12 elements. It has a max collector-emitter voltage of 1700V and operates b/w -25°C to 55°C. Ideal for power control applications, this surface-mount transistor features a silicon element in a rectangular package style.

1700 V

COMPLEX

R-XXMA-X

12

55 Cel

-25 Cel

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NOT SPECIFIED

N-Channel

YES

UNSPECIFIED

UNSPECIFIED

NOT SPECIFIED

POWER CONTROL

SILICON

SIGC28T60EX1SA4 by Infineon Technologies

SIGC28T60EX1SA4

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: UNSPECIFIED; Maximum Collector-Emitter Voltage: 600 V; Reference Standard: IEC-62258-3;

600 V

SINGLE

6.5 V

20 V

R-XUUC-N3

1

3

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

IEC-62258-3

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1.85 V

AFGB30T65SQDN by Onsemi

AFGB30T65SQDN

Onsemi

AFGB30T65SQDN by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.1V and a max IC of 60A, ideal for power control applications. Featuring a single configuration with built-in diode, it has a package style of small outline and can operate b/w -55 to 175 °C. Suitable for surface mount assembly, this transistor offers fast turn-off time (toff) of 78.7ns and turn-on time (ton) of 33.6ns, meeting AEC-Q101 standards.

COLLECTOR

60 A

650 V

SINGLE WITH BUILT-IN DIODE

6 V

30 V

TO-263

R-PSSO-G2

e3

1

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

220 W

AEC-Q101

YES

MATTE TIN

GULL WING

SINGLE

30

POWER CONTROL

SILICON

78.7 ns

33.6 ns

2.1 V

NCG225L75NF8M1 by Onsemi

NCG225L75NF8M1

Onsemi

NCG225L75NF8M1 by Onsemi is an N-CHANNEL IGBT transistor for MOTOR CONTROL applications. It features a Max VCEsat of 1.75V, Nominal Turn Off Time of 424ns, and Max Collector-Emitter Voltage of 750V. This SQUARE-shaped chip operates b/w -40 to 175 °C with a Gate-Emitter Threshold Voltage of 7.2V, making it suitable for high-power motor control systems.

750 V

SINGLE

7.2 V

20 V

S-XUUC-N2

1

2

175 Cel

-40 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

N-CHANNEL

AEC-Q101

YES

NO LEAD

UPPER

MOTOR CONTROL

SILICON

424 ns

468 ns

1.75 V

STGB50H65FB2 by STMicroelectronics

STGB50H65FB2

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 272 W; Maximum Collector Current (IC): 86 A; Case Connection: COLLECTOR;

COLLECTOR

86 A

650 V

SINGLE

7 V

20 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

272 W

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

225 ns

41 ns

2 V

LGD15N41ATI by Littelfuse

LGD15N41ATI

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 107 W; Maximum Collector Current (IC): 15 A; Package Body Material: PLASTIC/EPOXY;

COLLECTOR

15 A

440 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

15000 ns

1.9 V

15 V

TO-252

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

107 W

AEC-Q101

7000 ns

YES

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

25000 ns

15500 ns

17000 ns

9500 ns

LGB15N41ATI by Littelfuse

LGB15N41ATI

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 107 W; Maximum Collector Current (IC): 15 A; Case Connection: COLLECTOR;

COLLECTOR

15 A

440 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

15000 ns

1.9 V

15 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

107 W

AEC-Q101

7000 ns

YES

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

25000 ns

15500 ns

17000 ns

9500 ns

LGD18N45TH by Littelfuse

LGD18N45TH

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 18 A; Maximum Turn On Time (ton): 10400 ns;

COLLECTOR

18 A

500 V

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

7000 ns

1.9 V

18 V

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

115 W

AEC-Q101

9000 ns

YES

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

19000 ns

5400 ns

10400 ns

2920 ns

2.85 V

LGB8204ATH by Littelfuse

LGB8204ATH

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 18 A; Minimum Operating Temperature: -55 Cel;

COLLECTOR

18 A

430 V

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

15000 ns

1.9 V

18 V

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

115 W

AEC-Q101

7000 ns

YES

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

25000 ns

13000 ns

11000 ns

5200 ns

LGD8201ATI by Littelfuse

LGD8201ATI

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 20 A; Package Style (Meter): SMALL OUTLINE;

COLLECTOR

20 A

440 V

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

14000 ns

2.1 V

15 V

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

125 W

AEC-Q101

7000 ns

YES

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

24000 ns

18500 ns

9000 ns

6500 ns

1.9 V

LGB8207TH by Littelfuse

LGB8207TH

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 165 W; Maximum Collector Current (IC): 20 A; Maximum Gate-Emitter Threshold Voltage: 2 V;

COLLECTOR

20 A

365 V

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

15000 ns

2 V

15 V

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

165 W

AEC-Q101

2000 ns

YES

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

21000 ns

14700 ns

2750 ns

2450 ns

LGD18N40ATH by Littelfuse

LGD18N40ATH

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A; Maximum Rise Time (tr): 7000 ns;

COLLECTOR

15 A

430 V

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

15000 ns

1.9 V

18 V

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

115 W

AEC-Q101

7000 ns

YES

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

25000 ns

13000 ns

11000 ns

5200 ns

IXYT55N120A4HV by Littelfuse

IXYT55N120A4HV

Littelfuse

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 650 W; Maximum Collector Current (IC): 175 A; Maximum Gate-Emitter Voltage: 20 V;

COLLECTOR

175 A

1200 V

SINGLE

6.5 V

20 V

TO-268AA

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

650 W

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

910 ns

53 ns

1.8 V

STGB20H65FB2 by STMicroelectronics

STGB20H65FB2

STMicroelectronics

STGB20H65FB2 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2.1V, 650V collector-emitter voltage, and operates at temperatures up to 175 °C. Ideal for high-performance applications in energy conversion systems.

COLLECTOR

40 A

650 V

SINGLE

7 V

20 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

147 W

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

178 ns

26 ns

2.1 V

IXYT85N120A4HV by Littelfuse

IXYT85N120A4HV

Littelfuse

Littelfuse IXYT85N120A4HV is an N-CHANNEL IGBT for POWER CONTROL applications. With a max VCEsat of 1.8V, it offers a high collector-emitter voltage of 1200V and can handle up to 300A collector current. Its small outline package and gull wing terminals make it suitable for surface mount designs in power electronics.

COLLECTOR

300 A

1200 V

SINGLE

6.5 V

20 V

TO-268AA

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

1150 W

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

990 ns

73 ns

1.8 V

STGB20H65DFB2 by STMicroelectronics

STGB20H65DFB2

STMicroelectronics

STGB20H65DFB2 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2.1V, supports up to 40A collector current, and operates in temperatures from -55 °C to 175 °C. Ideal for high-performance applications, it ensures reliable operation with built-in diode functionality.

COLLECTOR

40 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

147 W

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

178 ns

26 ns

2.1 V

LGB18N40ATH by Littelfuse

LGB18N40ATH

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 18 A; No. of Elements: 1;

COLLECTOR

18 A

430 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

15000 ns

18 V

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

115 W

AEC-Q101

7000 ns

YES

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

25000 ns

13000 ns

11000 ns

5200 ns

LGB8245TI by Littelfuse

LGB8245TI

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 20 A; Transistor Element Material: SILICON;

COLLECTOR

20 A

500 V

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

12000 ns

2.1 V

15 V

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

150 W

AEC-Q101

6000 ns

YES

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

20000 ns

12500 ns

8000 ns

4400 ns

IXYT40N120A4HV by Littelfuse

IXYT40N120A4HV

Littelfuse

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 600 W; Maximum Collector Current (IC): 140 A; No. of Terminals: 2;

COLLECTOR

140 A

1200 V

SINGLE

6.5 V

20 V

TO-268AA

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

600 W

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

1040 ns

67 ns

1.8 V

STGB25N36LZAG by STMicroelectronics

STGB25N36LZAG

STMicroelectronics

STGB25N36LZAG IGBT from STMicroelectronics features a max VCEsat of 1.25V, supports up to 25A collector current, and operates at temperatures from -55 °C to 175 °C. Ideal for automotive ignition applications, it ensures reliable performance with built-in TVS diode. Its compact surface mount design enhances space efficiency in electronic circuits.

COLLECTOR

25 A

385 V

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

2.1 V

16 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

150 W

AEC-Q101

YES

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

14500 ns

4560 ns

1.25 V

STGD25N36LZAG by STMicroelectronics

STGD25N36LZAG

STMicroelectronics

STGD25N36LZAG from STMicroelectronics is an N-channel IGBT designed for automotive ignition applications. It features a max VCEsat of 1.25V, power dissipation of 150W, and operates b/w -55 °C to 175 °C. Its built-in TVS diode enhances reliability in demanding environments.

COLLECTOR

25 A

385 V

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

2.1 V

16 V

TO-252

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

150 W

AEC-Q101

YES

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

14500 ns

4560 ns

1.25 V

LGB8202ATI by Littelfuse

LGB8202ATI

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 20 A; Package Body Material: PLASTIC/EPOXY;

COLLECTOR

20 A

440 V

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

14000 ns

2.1 V

15 V

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

150 W

AEC-Q101

7000 ns

YES

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

24000 ns

24000 ns

9000 ns

18500 ns

LGB8206ATI by Littelfuse

LGB8206ATI

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 20 A; Terminal Form: GULL WING;

COLLECTOR

20 A

390 V

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

14000 ns

2.1 V

15 V

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

150 W

AEC-Q101

7000 ns

YES

GULL WING

SINGLE

SILICON

24000 ns

18500 ns

9000 ns

6500 ns

LGB8206ARI by Littelfuse

LGB8206ARI

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 20 A; Case Connection: COLLECTOR;

COLLECTOR

20 A

390 V

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

14000 ns

2.1 V

15 V

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

150 W

AEC-Q101

7000 ns

YES

GULL WING

SINGLE

SILICON

24000 ns

18500 ns

9000 ns

6500 ns

LGD8205ATI by Littelfuse

LGD8205ATI

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 20 A; Reference Standard: AEC-Q101;

COLLECTOR

20 A

390 V

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

8000 ns

2.1 V

15 V

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

125 W

AEC-Q101

8000 ns

YES

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

18000 ns

14000 ns

10000 ns

7500 ns

LGB8207ATH by Littelfuse

LGB8207ATH

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 165 W; Maximum Collector Current (IC): 20 A; Maximum Fall Time (tf): 15000 ns;

COLLECTOR

20 A

365 V

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

15000 ns

2 V

15 V

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

165 W

AEC-Q101

2000 ns

YES

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

21000 ns

14700 ns

2750 ns

2450 ns

IXGA48N60C3-TRL by Littelfuse

IXGA48N60C3-TRL

Littelfuse

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 75 A; Minimum Operating Temperature: -55 Cel;

COLLECTOR

75 A

600 V

SINGLE

5.5 V

20 V

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

300 W

YES

MATTE TIN

GULL WING

SINGLE

10

POWER CONTROL

SILICON

187 ns

45 ns

2.5 V

LGD8209TI by Littelfuse

LGD8209TI

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 94 W; Maximum Collector Current (IC): 12 A; Transistor Application: AUTOMOTIVE IGNITION;

COLLECTOR

12 A

445 V

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

2 V

15 V

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

94 W

YES

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

LGD8201TH by Littelfuse

LGD8201TH

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 20 A; Maximum Turn On Time (ton): 10000 ns;

COLLECTOR

20 A

440 V

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

8000 ns

2.1 V

15 V

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

125 W

AEC-Q101

8000 ns

YES

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

18000 ns

14000 ns

10000 ns

7500 ns