Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.
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STD60N55F3
STMicroelectronics
STD60N55F3 by STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 55 V, and operates at up to 175 °C. Ideal for power management in compact designs, it offers low on-resistance and built-in diode functionality.
390 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
55 V
80 A
.0085 ohm
METAL-OXIDE SEMICONDUCTOR
TO-252
R-PSSO-G2
e3
1
2
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL
110 W
320 A
Not Qualified
FET General Purpose Power
YES
MATTE TIN
GULL WING
SINGLE
30
SWITCHING
SILICON
STF60N55F3
STF60N55F3 from STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 42 A, a breakdown voltage of 55 V, and operates at up to 175 °C. Ideal for high-performance power management solutions.
42 A
TO-220AB
R-PSFM-T3
3
FLANGE MOUNT
30 W
168 A
NO
THROUGH-HOLE
STP60N55F3
STP60N55F3 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 80 A, a breakdown voltage of 55 V, and operates at up to 175 °C. Ideal for high-efficiency power management in various electronic devices.
STP95N4F3
STP95N4F3 by STMicroelectronics is a N-CHANNEL FET with 40V DS Breakdown Voltage, 320A IDM, and 0.0062 ohm RDS(on). Ideal for SWITCHING applications due to its 110W Pdiss, 175°C Tmax, and EAS of 400mJ. Package style: FLANGE MOUNT with Matte Tin finish.
400 mJ
40 V
.0062 ohm
Matte Tin (Sn)
STU60N55F3
STU60N55F3 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 80 A, a breakdown voltage of 55 V, and operates at up to 175 °C. Ideal for high-efficiency power management in various electronic devices.
TO-251
R-PSIP-T3
IN-LINE
STU95N4F3
STU95N4F3 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-power circuits, it ensures reliable performance with low on-resistance.
.065 ohm
STD7NM50N-1
STD7NM50N-1 by STMicroelectronics is an N-channel FET designed for switching applications. It features a 500V breakdown voltage, 20A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic circuits.
100 mJ
500 V
5 A
.78 ohm
TO-251AA
150 Cel
NOT SPECIFIED
45 W
20 A
STD7NM50N
STD7NM50N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 20A pulsed drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
STD9NM50N-1
STD9NM50N-1 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 30A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
150 mJ
7.5 A
.56 ohm
70 W
30 A
STF19NF20
STF19NF20 by STMicroelectronics is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features 60A IDM, 110mJ EAS, and 0.16 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 25W at 150°C.
110 mJ
200 V
15 A
.16 ohm
25 W
60 A
STF7NM50N
STF7NM50N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 20A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
ISOLATED
20 W
STF9NM50N
STF9NM50N by STMicroelectronics is an N-channel FET designed for switching applications, featuring a 500V breakdown voltage and a max drain current of 7.5A. It operates in enhancement mode with a low on-resistance of 0.56Ω. Ideal for high-efficiency power management solutions.
STI270N4F3
STI270N4F3 by STMicroelectronics is a N-CHANNEL FET with 40V DS Breakdown Voltage, 120A ID, and 0.0026 ohm RDS. Ideal for SWITCHING applications due to its 480A IDM and 1000mJ EAS ratings. Operating in ENHANCEMENT MODE, it has a max power dissipation of 330W at 175°C.
1000 mJ
120 A
.0026 ohm
TO-262AA
330 W
480 A
STP270N4F3
STP270N4F3 by STMicroelectronics is a N-CHANNEL FET with 40V DS Breakdown Voltage, 480A IDM, and 0.0029 ohm RDS. It's used for SWITCHING applications due to its 175°C max temp, 1000 mJ EAS rating, and SINGLE configuration with BUILT-IN DIODE.
.0029 ohm
STP7NM50N
STP7NM50N by STMicroelectronics is an N-channel FET designed for switching applications, featuring a 500V breakdown voltage and a max drain current of 5A. It operates in enhancement mode with a power dissipation of up to 45W. Ideal for high-temperature environments, it supports efficient circuit designs.
STP9NM50N
STP9NM50N by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 500V breakdown voltage and 30A pulsed drain current. It operates in enhancement mode with a max power dissipation of 70W. Its compact design suits various electronic circuits.
STS9D8NH3LL
STS9D8NH3LL by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 9A, a breakdown voltage of 30V, and operates at up to 150 °C. Ideal for compact power management in electronics.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
30 V
9 A
8 A
.025 ohm
R-PDSO-G8
e4
8
2 W
32 A
NICKEL PALLADIUM GOLD
DUAL
40
NTD20N06L-001
Onsemi
NTD20N06L-001 by Onsemi is a Power FET with 60V DS Breakdown Voltage, 20A ID, and 0.048 ohm RDS(ON). It is an N-CHANNEL transistor for SWITCHING applications. The package style is IN-LINE with PLASTIC/EPOXY body material and METAL-OXIDE SEMICONDUCTOR technology.
128 mJ
60 V
.048 ohm
e0
235
TIN LEAD
NTMKE4892NT1G
NTMKE4892NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 210A IDM, and 0.0026 ohm RDS(on). Ideal for SWITCHING applications in ENHANCEMENT MODE, this chip carrier package features a built-in diode and operates in BOTTOM terminal position.
290 mJ
26 A
R-XBCC-N3
UNSPECIFIED
CHIP CARRIER
210 A
NO LEAD
BOTTOM
STB13NM50N-1
STB13NM50N-1 by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 500V breakdown voltage and 12A max drain current. It offers a low on-resistance of 0.32Ω and operates at up to 150 °C. Its robust design ensures reliable performance in demanding environments.
200 mJ
12 A
.32 ohm
100 W
48 A
STB13NM50N
STB13NM50N by STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 500V breakdown voltage, 12A max drain current, and operates at up to 150 °C. This compact FET ensures efficient power management in various electronic devices.
TO-263AB
STF13NM50N
STF13NM50N by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 500V breakdown voltage and 12A max drain current. It offers a low on-resistance of 0.32Ω and operates at up to 150 °C. Its robust design ensures reliable performance in demanding environments.
STK822
STK822 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max pulsed drain current of 152 A, a breakdown voltage of 25 V, and operates at up to 150 °C. Ideal for compact power management in modern electronics.
ULTRA-LOW RESISTANCE
500 mJ
SOURCE
25 V
38 A
.003 ohm
R-XDSO-N4
4
5.2 W
152 A
STL6NM60N
STL6NM60N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 23A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
65 mJ
600 V
5.7 A
1 A
.92 ohm
S-XQCC-N12
12
SQUARE
23 A
QUAD
STP13NM50N
STP13NM50N by STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 500V breakdown voltage, 12A max drain current, and operates at up to 150 °C. This versatile FET is suitable for high-power circuits with efficient thermal management.
TIN
STP2NK100Z
STP2NK100Z by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 1000V breakdown voltage and a max drain current of 2A. It operates in enhancement mode with a power dissipation of up to 70W. This versatile transistor ensures efficient performance in various electronic circuits.
AVALANCHE ENERGY RATED
170 mJ
1000 V
2 A
1.85 A
8.5 ohm
9 pF
-55 Cel
7.4 A
74 ns
13.7 ns
STP3NK100Z
STP3NK100Z by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 1000V breakdown voltage, 10A pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
2.5 A
6 ohm
90 W
10 A
STP5N120
STP5N120 from STMicroelectronics is an N-channel FET ideal for switching applications. It features a 1200V breakdown voltage, 4.7A max drain current, and operates at up to 150 °C. This versatile transistor is suitable for high-power circuits in various electronic devices.
1200 V
4.4 A
4.7 A
3.5 ohm
160 W
18.8 A
STP70NS04ZC
STP70NS04ZC by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a max drain current of 80 A and a breakdown voltage of 33 V. It offers low on-resistance at 0.011 Ω and operates up to 175 °C. This versatile transistor is suitable for high-power circuits.
720 mJ
SINGLE WITH BUILT-IN DIODE AND RESISTOR
33 V
.011 ohm
180 W
STS4DNF60
STS4DNF60 by STMicroelectronics is an N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 2 ELEMENTS WITH BUILT-IN DIODE in a PLASTIC/EPOXY package, capable of handling 16A Pulsed Drain Current and 4A Drain Current. Operating in ENHANCEMENT MODE, it has a max power dissipation of 2W at 150°C.
LOW THRESHOLD
4 A
.09 ohm
16 A
STW13NM50N
STW13NM50N by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 500V breakdown voltage and 12A max drain current. It operates in enhancement mode with a power dissipation of up to 100W. Its compact design ensures efficient thermal management in various electronic circuits.
TO-247
e3/e1
MATTE TIN/TIN SILVER COPPER
FQB34N20TM_AM002
Fairchild Semiconductor
Fairchild Semiconductor's FQB34N20TM_AM002 is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 124A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.075 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE.
640 mJ
31 A
.075 ohm
245
124 A
FET General Purpose Powers
FQD5N60CTF
FQD5N60CTF by Fairchild Semiconductor is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 11.2A IDM, 210mJ EAS, and 49W Max Power Dissipation. Its PLASTIC/EPOXY package with GULL WING terminals makes it suitable for surface mount installations.
210 mJ
2.8 A
2.5 ohm
49 W
11.2 A
FQD6N50CTF
FQD6N50CTF by Fairchild Semiconductor is a N-CHANNEL Power FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 18A IDM, 300mJ EAS, and 1.2ohm RDS(ON). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 61W at 150°C.
300 mJ
4.5 A
1.2 ohm
61 W
18 A
IRF630B_FP001
Fairchild Semiconductor's IRF630B_FP001 is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 36A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode, 0.4 ohm RDS(on), and 72W Pdiss.
160 mJ
.4 ohm
72 W
36 A
STD6NM60N-1
STD6NM60N-1 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 4.6A max drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
4.6 A
18.4 A
STD6NM60N
STD6NM60N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 4.6A max drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
STF6NM60N
STF6NM60N by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 600V breakdown voltage and 4.6A max drain current. It operates in enhancement mode with a low on-resistance of 0.92Ω. This versatile FET is suitable for various power management tasks.
STP6NM60N
STP6NM60N from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 600V breakdown voltage and 4.6A max drain current. It operates in enhancement mode with a power dissipation of up to 45W. Its compact design suits various electronic circuits.
FQD6N40CTF
FQD6N40CTF by Fairchild Semiconductor is a N-CHANNEL Power FET with 400V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max Pulsed Drain Current of 18A and Avalanche Energy Rating of 270mJ. With a max power dissipation of 48W and operating temperature up to 150°C, it offers reliable performance in various electronic systems.
FAST SWITCHING
270 mJ
400 V
1 ohm
TO-252AA
48 W
VNV35N0713TR
VNV35N0713TR by STMicroelectronics is an N-channel MOSFET designed for efficient power management. It features a max DS breakdown voltage of 60V, power dissipation of 125W, and low on-resistance of 0.035Ω, making it ideal for high-performance applications. Its compact SO package ensures easy surface mounting in various electronic devices.
COMPLEX
.035 ohm
R-PDSO-G10
10
250
125 W
1350 ns
800 ns
STB12NM60N-1
STB12NM60N-1 by STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 600V breakdown voltage, 10A max drain current, and 90W power dissipation. This versatile FET operates efficiently in high-temperature environments up to 150 °C.
.41 ohm
40 A
STB12NM60N
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 90 W; Package Style (Meter): SMALL OUTLINE; Transistor Element Material: SILICON;
STF12NM60N
STF12NM60N by STMicroelectronics is an N-channel FET designed for switching applications, featuring a 600V breakdown voltage and 10A max drain current. It operates in enhancement mode with a low on-resistance of 0.41Ω. Ideal for high-efficiency power management solutions.
STP12NM60N
STP12NM60N from STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 600V breakdown voltage, 10A max drain current, and 90W power dissipation. Its robust design suits high-efficiency power management in various electronic devices.
STW12NM60N
STW12NM60N by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 600V breakdown voltage and 10A max drain current. It offers a low on-resistance of 0.41Ω and operates at up to 150 °C. This versatile FET is packaged in a flange mount design for easy integration.
BUK221-50DY,118
NXP Semiconductors
N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Qualification: Not Qualified; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
60 mJ
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
45 V
R-PSSO-G6
6
BUK7109-75ATE,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 272 W; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 245;
739 mJ
75 V
75 A
.009 ohm
R-PSSO-G4
272 W
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