Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.
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STP80N10F7
STMicroelectronics
STP80N10F7 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, 80A ID, and 0.01 ohm RDS. It is used for SWITCHING applications in ENHANCEMENT MODE with 320A IDM. Operating temp range: -55 to 175 °C.
ULTRA LOW-ON RESISTANCE
DRAIN
SINGLE WITH BUILT-IN DIODE
100 V
80 A
.01 ohm
METAL-OXIDE SEMICONDUCTOR
TO-220AB
R-PSFM-T3
1
3
ENHANCEMENT MODE
175 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
NOT SPECIFIED
N-CHANNEL
110 W
320 A
NO
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
FDB7030BLS
Fairchild Semiconductor
Fairchild Semiconductor's FDB7030BLS is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 160A IDM and 0.0105 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 100°C. Suitable for surface mount with GULL WING terminals, this transistor offers a max power dissipation of 65W in a RECTANGULAR package.
30 V
56 A
.0105 ohm
TO-263AB
R-PSSO-G2
e0
2
100 Cel
SMALL OUTLINE
65 W
160 A
Not Qualified
FET General Purpose Power
YES
Tin/Lead (Sn85Pb15)
GULL WING
IRFP450B
Fairchild Semiconductor's IRFP450B is a N-CHANNEL Power FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 56A IDM, 990mJ EAS, and 0.39 ohm RDS(on), operating in ENHANCEMENT MODE at up to 150°C.
990 mJ
500 V
14 A
.39 ohm
e3
150 Cel
205 W
MATTE TIN
FQA24N50F
FQA24N50F by Fairchild Semiconductor is a N-CHANNEL Power FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 24A, Pulsed Drain Current of 96A, and an On Resistance of 0.2 ohm. The transistor operates in ENHANCEMENT MODE and has a Max Power Dissipation of 290W.
1100 mJ
24 A
.2 ohm
290 W
96 A
IXFH12N50F
IXYS Corporation
IXYS Corporation's IXFH12N50F is a N-CHANNEL FET with 500V DS breakdown voltage and 48A IDM. Ideal for switching applications, it operates in enhancement mode with 0.4 ohm RDS(on) and 150°C max temp.
AVALANCHE RATED
300 mJ
12 A
.4 ohm
TO-247
48 A
DMN2104L-7
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Minimum DS Breakdown Voltage: 20 V; Peak Reflow Temperature (C): 260;
HIGH RELIABILITY
20 V
4.3 A
.053 ohm
R-PDSO-G3
260
1.4 W
15 A
DUAL
30
DMN3052LSS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Position: DUAL; No. of Elements: 1;
7.1 A
.03 ohm
R-PDSO-G8
8
2.5 W
28 A
DMS2220LFW-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; JESD-609 Code: e4; Additional Features: HIGH RELIABILITY;
2.9 A
.095 ohm
R-PDSO-N8
e4
P-CHANNEL
1.5 W
10 A
Other Transistors
NICKEL PALLADIUM GOLD
NO LEAD
STB12NM50ND
STB12NM50ND by STMicroelectronics is a N-CHANNEL FET for SWITCHING applications. Features include 500V DS Breakdown Voltage, 44A Pulsed Drain Current, and 0.38 ohm On Resistance. Suitable for high-power switching circuits in various electronic devices.
350 mJ
11 A
.38 ohm
245
100 W
44 A
STD12NM50ND
STD12NM50ND by STMicroelectronics is a N-CHANNEL FET for SWITCHING applications. It features a 500V DS Breakdown Voltage, 44A Pulsed Drain Current, and 0.38 ohm On Resistance. With a max power dissipation of 100W and operating temperature of 150 °C, it is ideal for high-power switching circuits.
TO-252AA
Matte Tin (Sn) - annealed
STD3NK60ZD
STD3NK60ZD by STMicroelectronics is a N-CHANNEL Power FET with 600V DS Breakdown Voltage and 9.6A Pulsed Drain Current, ideal for SWITCHING applications. It features a SINGLE configuration with BUILT-IN DIODE, operating in ENHANCEMENT MODE at up to 150 °C, making it suitable for high-power tasks.
150 mJ
600 V
2.4 A
3.6 ohm
TO-252
45 W
9.6 A
STD40N2LH5
STD40N2LH5 by STMicroelectronics is a N-CHANNEL Power FET with 25V DS Breakdown Voltage and 160A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0155 ohm RDS(on), and 35W Pdiss in a PLASTIC/EPOXY package.
110 mJ
25 V
40 A
.0155 ohm
35 W
STF6N52K3
STF6N52K3 by STMicroelectronics is a N-CHANNEL FET with 525V DS Breakdown Voltage, ideal for SWITCHING applications. It features 20A Max Pulsed Drain Current, 110mJ Avalanche Energy Rating, and 1.2ohm Max Drain-Source On Resistance. This METAL-OXIDE SEMICONDUCTOR transistor operates at up to 150 °C and has a power dissipation of 25W in a FLANGE MOUNT package.
ULTRA-LOW RESISTANCE
ISOLATED
525 V
5 A
1.2 ohm
25 W
20 A
STP180N10F3
STP180N10F3 by STMicroelectronics is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. It has 120A Drain Current, 0.0048 ohm On Resistance, and 315W Power Dissipation. Ideal for SWITCHING applications in ENHANCEMENT MODE, it features a SINGLE configuration with BUILT-IN DIODE and operates at up to 175 °C.
120 A
.0048 ohm
315 W
480 A
IPI057N08N3G
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Operating Temperature: 175 Cel; Operating Mode: ENHANCEMENT MODE;
210 mJ
80 V
.0057 ohm
TO-262AA
R-PSIP-T3
IN-LINE
150 W
DMC3018LSD-13
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Package Body Material: PLASTIC/EPOXY; Maximum Drain-Source On Resistance: .02 ohm;
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
9.1 A
.02 ohm
N-CHANNEL AND P-CHANNEL
32 A
NTMFS4823NT1G
Onsemi
NTMFS4823NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 85A IDM and 0.018 ohm RDS(ON), suitable for high-power operations. With a compact SMALL OUTLINE package and -55 to 150 °C operating range, it offers efficient power management in various electronic devices.
28.8 mJ
30 A
6.9 A
.018 ohm
85 pF
R-PDSO-F6
6
32.5 W
85 A
FLAT
NTMFS4823NT3G
NTMFS4823NT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 85A IDM, 28.8mJ EAS, and 0.018 ohm RDS(on). Operating from -55 to 150 °C, it has a max power dissipation of 32.5W in a SMALL OUTLINE package.
TIN
IPB100N06S3-04
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 214 W; Maximum Drain Current (Abs) (ID): 100 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
450 mJ
55 V
100 A
.0041 ohm
214 W
400 A
IPB100N06S3L-04
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 214 W; Maximum Operating Temperature: 175 Cel; Avalanche Energy Rating (EAS): 450 mJ;
LOGIC LEVEL COMPATIBLE
.0059 ohm
IPB45N06S3-16
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 65 W; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
95 mJ
45 A
.0154 ohm
180 A
IPB45N06S3L-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 65 W; JESD-609 Code: e3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
.0131 ohm
IPB80N06S2L-H5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Transistor Element Material: SILICON; Maximum Operating Temperature: 175 Cel;
700 mJ
.0062 ohm
300 W
IPB80N06S3L-05
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 165 W; JEDEC-95 Code: TO-263AB; Peak Reflow Temperature (C): 245;
345 mJ
.0077 ohm
165 W
IPD30N06S2-15
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 136 W; Maximum Operating Temperature: 175 Cel; Maximum Drain-Source On Resistance: .0147 ohm;
240 mJ
.0147 ohm
136 W
40
IPD30N06S2L-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 136 W; Case Connection: DRAIN; No. of Terminals: 2;
.017 ohm
200 A
IPI80N06S3-05
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 165 W; Minimum DS Breakdown Voltage: 55 V; No. of Elements: 1;
.0054 ohm
IPP100N06S3-04
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 214 W; Maximum Drain-Source On Resistance: .0044 ohm; JESD-30 Code: R-PSFM-T3;
.0044 ohm
IPP100N06S3L-04
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 214 W; Maximum Drain-Source On Resistance: .0062 ohm; Avalanche Energy Rating (EAS): 450 mJ;
IPP45N06S3L-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; No. of Elements: 1; Avalanche Energy Rating (EAS): 95 mJ;
.0134 ohm
IPP80N06S2L-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 210 W; Maximum Drain Current (ID): 80 A; Operating Mode: ENHANCEMENT MODE;
210 W
IPP80N06S3-05
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 165 W; Minimum DS Breakdown Voltage: 55 V; Terminal Position: SINGLE;
IPP80N06S3L-05
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 165 W; Terminal Form: THROUGH-HOLE; Avalanche Energy Rating (EAS): 345 mJ;
.008 ohm
FDB2532_F085
FDB2532_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET with 150V DS Breakdown Voltage, 79A Drain Current, and 0.016 ohm On Resistance. It is used for SWITCHING applications in ENHANCEMENT MODE with a built-in DIODE. This transistor operates at up to 175°C and has a power dissipation of 310W in a small outline package.
400 mJ
150 V
79 A
8 A
.016 ohm
310 W
FDD4243_F085
Fairchild Semiconductor's FDD4243_F085 is a P-CHANNEL Power FET with 40V DS Breakdown Voltage, 24A Drain Current, and 0.044 ohm On Resistance. Ideal for SWITCHING applications in automotive (AEC-Q101) and industrial sectors due to its high power dissipation of 42W and wide operating temperature range (-55 to 175 °C).
84 mJ
40 V
.044 ohm
42 W
AEC-Q101
FDD6637_F085
FDD6637_F085 by Fairchild Semiconductor is a P-CHANNEL Power FET with 35V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max Drain Current of 55A, 0.0116 ohm On Resistance, and operates in ENHANCEMENT MODE. This METAL-OXIDE SEMICONDUCTOR transistor has a max power dissipation of 57W and can withstand temperatures up to 175°C.
61 mJ
35 V
55 A
21 A
.0116 ohm
57 W
STP130NH02L
STP130NH02L by STMicroelectronics is a N-CHANNEL FET with 24V DS Breakdown Voltage, 360A IDM, and 0.0044 ohm RDS(on). Ideal for SWITCHING applications due to its 175°C Max Operating Temp and 150W Power Dissipation. It features SINGLE configuration with BUILT-IN DIODE in a RECTANGULAR package.
LOW THRESHOLD
900 mJ
24 V
90 A
360 A
SPI47N10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 175 W; Additional Features: AVALANCHE RATED; Maximum Pulsed Drain Current (IDM): 188 A;
47 A
.033 ohm
175 W
188 A
DMP3025LK3-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 10 W; Package Shape: RECTANGULAR; Qualification: Not Qualified;
16.1 A
10.6 A
.025 ohm
10 W
41.9 A
STW22NM60N
STW22NM60N by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 16A max drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
16 A
.22 ohm
125 W
64 A
Matte Tin (Sn)
IPD50R520CP
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 66 W; Maximum Drain Current (Abs) (ID): 7.1 A; JESD-609 Code: e3;
166 mJ
.52 ohm
66 W
IPI50R350CP
IPI50R350CP by Infineon is a N-CHANNEL Power FET with 500V DS Breakdown Voltage. It has a max IDM of 22A and EAS of 246mJ, suitable for SWITCHING applications. Operating in ENHANCEMENT MODE, it offers 0.35 ohm RDS(on) and can handle up to 89W power dissipation at 150°C.
246 mJ
.35 ohm
89 W
22 A
NTMFS5844NLT1G
NTMFS5844NLT1G by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, 243A IDM, and 0.016 ohm RDS(on). Ideal for power management applications due to its 107W Pdiss, EAS of 48mJ, and operating temp up to 150°C. Suitable for surface mount designs with small outline package style.
48 mJ
60 V
61 A
R-PDSO-F5
5
107 W
243 A
NTMFS4834NT3G
Power Field-Effect Transistors; Terminal Finish: TIN; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30;
130 A
IRF6648TR1PBF
International Rectifier
IRF6648TR1PBF by International Rectifier is an N-CHANNEL power FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max pulsed drain current of 260A.
LOW CONDUCTION LOSS
47 mJ
86 A
.007 ohm
R-XBCC-N3
e1
UNSPECIFIED
CHIP CARRIER
2.8 W
260 A
TIN SILVER COPPER
BOTTOM
IPD50R399CP
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; JESD-30 Code: R-PSSO-G2; Avalanche Energy Rating (EAS): 215 mJ;
215 mJ
9 A
.399 ohm
83 W
IPS50R520CP
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 66 W; JESD-30 Code: R-PSIP-T3; Maximum Operating Temperature: 150 Cel;
TO-251
BTS244ZE-3043
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 170 W; Transistor Application: SWITCHING; JEDEC-95 Code: TO-220;
1650 mJ
SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
35 A
400 pF
TO-220
R-PSFM-T5
-40 Cel
170 W
100 ns
130 ns
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