Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.
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STB230NH03L
STMicroelectronics
STB230NH03L by STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, breakdown voltage of 30 V, and power dissipation up to 300 W. Ideal for compact designs with its surface mount configuration.
1150 mJ
SINGLE WITH BUILT-IN DIODE
30 V
80 A
.003 ohm
METAL-OXIDE SEMICONDUCTOR
R-PSSO-G2
1
2
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
NOT SPECIFIED
N-CHANNEL
300 W
1000 A
Not Qualified
FET General Purpose Power
YES
GULL WING
SINGLE
SWITCHING
SILICON
STB50NF25
STB50NF25 from STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a max drain current of 45 A, a breakdown voltage of 250 V, and operates at temperatures from -55 °C to 150°C. Ideal for power management in compact designs.
160 mJ
250 V
45 A
.069 ohm
e3
150 Cel
-55 Cel
245
160 W
180 A
MATTE TIN
30
STB15NM60N
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 14 A;
300 mJ
600 V
14 A
.299 ohm
125 W
56 A
STF11NM65N
STF11NM65N by STMicroelectronics is a powerful N-channel FET designed for switching applications, featuring a 650V breakdown voltage and 12A max drain current. It operates in enhancement mode with a low on-resistance of 0.38Ω. Ideal for high-efficiency power management solutions.
ISOLATED
650 V
12 A
.38 ohm
TO-220AB
R-PSFM-T3
3
FLANGE MOUNT
30 W
48 A
NO
THROUGH-HOLE
STF15NM60N
STF15NM60N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 14A max drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
STI15NM60N
STI15NM60N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 14A max drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
TO-262AA
R-PSIP-T3
IN-LINE
40
STP11NM65N
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; JESD-30 Code: R-PSFM-T3; Package Style (Meter): FLANGE MOUNT;
STP15NM60N
STP15NM60N from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 14A max drain current, and 125W power dissipation. Ideal for high-efficiency power management in various electronic devices.
STP180N55F3
STP180N55F3 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 120 A, breakdown voltage of 55 V, and power dissipation up to 330 W. Ideal for high-efficiency power management in various electronic devices.
1000 mJ
55 V
120 A
.0038 ohm
330 W
480 A
Matte Tin (Sn)
STW15NM60N
STW15NM60N by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 600V breakdown voltage and 14A max drain current. It offers a low on-resistance of 0.299Ω and operates at up to 150 °C. Its robust design ensures reliable performance in demanding environments.
TO-247
TIN
IPB79CN10NG
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 31 W; JESD-30 Code: R-PSSO-G2; Terminal Finish: MATTE TIN;
17 mJ
DRAIN
100 V
13 A
.079 ohm
TO-263AB
31 W
52 A
IRF7495TR
International Rectifier
IRF7495TR by International Rectifier is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. It features a built-in diode for SWITCHING applications, with 58A IDM and 0.022 ohm RDS(on). This SMALL OUTLINE transistor operates in ENHANCEMENT MODE at up to 150°C, making it suitable for high-power electronic devices.
180 mJ
7.3 A
.022 ohm
MS-012AA
R-PDSO-G8
e0
8
2.5 W
58 A
Tin/Lead (Sn/Pb)
DUAL
FQA36P15_F109
Fairchild Semiconductor
FQA36P15_F109 by Fairchild Semiconductor is a P-CHANNEL Power FET with 150V DS Breakdown Voltage. It features a max Drain Current of 36A, 0.09 ohm On Resistance, and 294W Power Dissipation. Ideal for SWITCHING applications in ENHANCEMENT MODE, this transistor has a package style of FLANGE MOUNT and operates up to 175°C.
FAST SWITCHING
1400 mJ
150 V
36 A
.09 ohm
P-CHANNEL
294 W
144 A
Other Transistors
STB11NM60N-1
STB11NM60N-1 from STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 600V breakdown voltage, 10A max drain current, and 90W power dissipation. This versatile component operates efficiently in high-temperature environments up to 150 °C.
200 mJ
10 A
.45 ohm
90 W
40 A
STP200N4F3
STP200N4F3 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 120 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-power circuits, it ensures reliable performance with low on-resistance.
862 mJ
40 V
.0044 ohm
BSP129L6327
BSP129L6327 by Infineon Technologies is a N-CHANNEL Power FET with PLASTIC/EPOXY package. It has a Min DS Breakdown Voltage of 240V and Max Drain Current of 0.35A, making it suitable for applications requiring high power dissipation in small outline packages. Ideal for depletion mode operation at up to 150°C, this FET offers low drain-source resistance of 6 ohm for efficient performance.
240 V
.35 A
6 ohm
R-PDSO-G4
4
DEPLETION MODE
260
1.8 W
1.4 A
BTS282ZE-3180A
BTS282ZE-3180A by Infineon is a N-channel Power FET with 49V DS breakdown voltage and 320A IDM. It features a built-in diode, temp sensor, and 0.0095 ohm RDS(on), suitable for switching applications. With a max operating temp of 175°C, it's ideal for high-power systems requiring efficient performance.
LOGIC LEVEL COMPATIBLE
2000 mJ
SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
49 V
.0095 ohm
R-PSSO-G7
7
320 A
BTS282ZE-3230
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR; Surface Mount: NO; Qualification: Not Qualified; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
R-PSFM-T7
FDS3572_NL
FDS3572_NL by Fairchild Semiconductor is a N-CHANNEL FET with 80V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and operates in ENHANCEMENT MODE. With 8.9A ID and 0.016 ohm RDS(on), it offers high performance in a SMALL OUTLINE package for surface mount assembly.
515 mJ
80 V
8.9 A
.016 ohm
VNB35N07-E
STMicroelectronics VNB35N07-E is a N-CHANNEL FET with 60V DS Breakdown Voltage and 35A ID. Ideal for automotive applications, it features 125W Pd, 0.035 ohm RDS(on), and AEC-Q101 compliance.
COMPLEX
60 V
35 A
.035 ohm
AEC-Q101
1350 ns
800 ns
IRF540N_R4942
Fairchild Semiconductor's IRF540N_R4942 is a N-CHANNEL Power FET with 33A max drain current and 120W power dissipation. Ideal for applications requiring high power handling in enhancement mode operation, such as motor control and power supplies.
33 A
120 W
STD85N3LH5
STD85N3LH5 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for high-performance power management in compact designs.
ULTRA-LOW RESISTANCE
165 mJ
.0065 ohm
TO-252
70 W
Matte Tin (Sn) - annealed
STD8NM60N-1
STD8NM60N-1 by STMicroelectronics is an N-channel FET designed for switching applications. It features a 600V breakdown voltage, 28A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
AVALANCHE RATED
7 A
.65 ohm
TO-251AA
28 A
STD8NM60N
STD8NM60N by STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 600V breakdown voltage, 28A pulsed drain current, and operates at up to 150 °C. Its compact design with gull-wing terminals ensures efficient surface mounting.
STF20NM65N
STF20NM65N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 650V breakdown voltage, 60A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
115 mJ
19 A
15 A
.27 ohm
40 W
60 A
STF8NM60N
STF8NM60N by STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 600V breakdown voltage, 28A pulsed drain current, and operates at up to 150 °C. This versatile FET is suitable for high-efficiency power management solutions.
25 W
STP15NM65N
STP15NM65N by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 15.5A max drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
187 mJ
15.5 A
150 W
STP20NM65N
STP20NM65N from STMicroelectronics is a powerful N-channel MOSFET designed for efficient switching applications. It features a 650V breakdown voltage, 19A max drain current, and 160W power dissipation. Ideal for high-performance power management in various electronic devices.
STP8NM60N
STP8NM60N by STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 600V breakdown voltage, 28A pulsed drain current, and operates at up to 150 °C. Its compact design ensures efficient power management in various electronic circuits.
STU85N3LH5
STU85N3LH5 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for high-power circuits with low on-resistance (0.0071 Ω).
.0071 ohm
TO-251
STW20NM65N
STW20NM65N by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 650V breakdown voltage and 19A max drain current. It offers a low on-resistance of 0.19Ω and operates at up to 150 °C. Its robust design ensures reliable performance in demanding environments.
500 mJ
.19 ohm
e3/e1
76 A
MATTE TIN/TIN SILVER COPPER
NTGS3443BT1G
Onsemi
Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Terminal Finish: TIN; Maximum Time At Peak Reflow Temperature (s): 30; Maximum Drain Current (Abs) (ID): 3.7 A; Qualification: Not Qualified;
3.7 A
DMT5015LFDF-13
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.97 W; Terminal Form: NO LEAD; Case Connection: DRAIN;
10.4 mJ
50 V
9.1 A
.015 ohm
15.2 pF
S-PDSO-N6
e4
6
SQUARE
1.97 W
Nickel/Palladium/Gold (Ni/Pd/Au)
NO LEAD
DMT5015LFDF-7
DMT5015LFDF-7 by Diodes Inc. is a N-CHANNEL FET with 50V DS Breakdown Voltage, ideal for SWITCHING applications. It features 60A IDM, 10.4mJ EAS, and 0.015 ohm RDS(ON). With a small outline package style and -55 to 150 °C operating temperature range, it offers high performance in power management systems.
NTMD6N04R2G
NTMD6N04R2G by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 29A IDM. Ideal for SWITCHING applications, it features a 245mJ EAS rating and 0.034 ohm Drain-Source Resistance. With GULL WING terminals in an 8-terminal package, it operates in ENHANCEMENT MODE up to 150 °C.
245 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
5.8 A
4.6 A
.034 ohm
2 W
29 A
FET General Purpose Powers
Tin (Sn)
CSD25302Q2
Texas Instruments
CSD25302Q2 by Texas Instruments is a P-CHANNEL FET for SWITCHING applications. It features 20V DS Breakdown Voltage, 5A Drain Current, and 0.092 ohm On Resistance. With a max power dissipation of 2.4W and operating temperature of 150°C, it's ideal for high-performance electronic devices.
SOURCE
20 V
5 A
.092 ohm
2.4 W
20 A
ZXMN15A27KTC
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 9.5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1;
HIGH RELIABILITY
55 mJ
2.55 A
1.7 A
TO-252AA
9.5 W
17.2 A
NTB6410ANG
The Onsemi NTB6410ANG is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, 305A IDM, and 0.013 ohm RDS(on). Ideal for high-power applications requiring up to 188W dissipation. Suitable for surface mount designs in power electronics due to its small outline package and built-in diode.
.013 ohm
188 W
305 A
NTB6413ANG
NTB6413ANG by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, 178A IDM, and 0.028 ohm RDS(on). Ideal for applications requiring high power dissipation up to 136W in enhancement mode operation. Suitable for surface mount designs due to GULL WING terminals and small outline package style.
42 A
.028 ohm
136 W
178 A
NTD6415AN-1G
NTD6415AN-1G by Onsemi is a Power FET with 100V DS Breakdown Voltage, 89A IDM, and 0.055 ohm RDS(on). Ideal for applications requiring high drain current handling such as power supplies and motor control systems. Operating in enhancement mode, it features a built-in diode and can withstand up to 175 °C temperature.
79 mJ
23 A
.055 ohm
89 A
NTD6415ANT4G
NTD6415ANT4G by Onsemi is a Power FET with 100V DS Breakdown Voltage, 89A IDM, and 0.055 ohm RDS(on). It is an N-CHANNEL transistor in a PLASTIC/EPOXY package ideal for power management applications. Operating in ENHANCEMENT MODE, it has a max temp of 175 °C and features a built-in diode.
NTD6416AN-1G
NTD6416AN-1G by Onsemi is a Power FET with 100V DS Breakdown Voltage, 62A IDM, and 0.081 ohm RDS. Ideal for power applications requiring high drain current handling in enhancement mode operation. Suitable for use in various electronic devices due to its high power dissipation of 71W and operating temperature up to 175 °C.
43 mJ
17 A
.081 ohm
71 W
62 A
NTP6410ANG
NTP6410ANG by Onsemi is a single N-channel power FET with a built-in diode, featuring a min DS breakdown voltage of 100V and max pulsed drain current of 305A. Ideal for applications requiring high power dissipation up to 188W, such as in flange mount configurations for enhanced performance in enhancement mode operation.
SI3445DV-T1-GE3
Vishay Intertechnology
SI3445DV-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 8V DS Breakdown Voltage, 20A IDM, and 0.042 ohm RDS(ON). Ideal for power management applications due to its small outline package, 150°C max temp, and 2W power dissipation capability.
8 V
5.6 A
.042 ohm
R-PDSO-G6
PURE MATTE TIN
SI7228DN-T1-GE3
Vishay Intertechnology's SI7228DN-T1-GE3 is an N-channel FET with 2 elements and built-in diode for switching applications. Features include max pulsed drain current of 35A, avalanche energy rating of 9.8mJ, and max power dissipation of 23W. Ideal for high-power switching circuits requiring a small outline package design.
9.8 mJ
26 A
8.8 A
.02 ohm
S-XDSO-C6
UNSPECIFIED
23 W
Pure Matte Tin (Sn) - annealed
C BEND
DMP3017SFK-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 17 W; Transistor Element Material: SILICON; Peak Reflow Temperature (C): 260;
104 mJ
7.8 A
.014 ohm
686 pF
R-PDSO-N6
17 W
MIL-STD-202
NICKEL PALLADIUM GOLD
170 ns
45 ns
DMP3017SFK-7
DMP3017SFK-7 by Diodes Inc. is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A IDM, 104mJ EAS, and 0.014 ohm RDS(ON). With a small outline package style and -55 to 150 °C operating temperature range, it offers high performance in various electronic designs.
DMT8012LFG-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; Maximum Feedback Capacitance (Crss): 10 pF; JESD-609 Code: e3;
9.5 A
10 pF
S-PDSO-N8
2.2 W
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