Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.
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NTP5404NRG
Onsemi
NTP5404NRG by Onsemi is a single N-channel FET with built-in diode for switching applications. It features a min DS breakdown voltage of 40V, max pulsed drain current of 258A, and max power dissipation of 254W. Ideal for enhancement mode operation in high-power systems with its low on-resistance of 0.0045 ohm.
1000 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
40 V
167 A
136 A
.0045 ohm
METAL-OXIDE SEMICONDUCTOR
TO-220AB
R-PSFM-T3
e3
1
3
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
254 W
258 A
Not Qualified
FET General Purpose Power
NO
TIN
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
STB36NM60N
STMicroelectronics
STB36NM60N by STMicroelectronics is a robust N-channel MOSFET designed for efficient switching applications. It features a 600V breakdown voltage, 25A max drain current, and 250W power dissipation. Ideal for high-performance power management in compact designs.
345 mJ
600 V
25 A
29 A
.105 ohm
TO-263AB
R-PSSO-G2
2
150 Cel
SMALL OUTLINE
245
250 W
116 A
YES
Matte Tin (Sn) - annealed
GULL WING
30
DMN2027LK3-13
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8.9 W; Moisture Sensitivity Level (MSL): 1; Maximum Operating Temperature: 150 Cel;
20 V
17 A
11.6 A
.021 ohm
TO-252AA
260
8.9 W
46.8 A
MATTE TIN
DMN3020LK3-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8.9 W; Maximum Drain-Source On Resistance: .02 ohm; Qualification: Not Qualified;
30 V
16.7 A
11.3 A
.02 ohm
51 A
FET General Purpose Powers
DMN4009LK3-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 10.3 W; Transistor Element Material: SILICON; No. of Terminals: 2;
18 A
.0085 ohm
10.3 W
96.6 A
DMN4015LK3-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 10.3 W; Case Connection: DRAIN; No. of Elements: 1;
20.8 A
13.5 A
.015 ohm
72.8 A
STD75N3LLH6
STD75N3LLH6 by STMicroelectronics is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 75A Drain Current. It is used for SWITCHING applications, operates in ENHANCEMENT MODE, and has a max power dissipation of 60W. Ideal for high-power switching circuits requiring efficient performance.
75 A
.008 ohm
TO-252
60 W
300 A
STL9N3LLH5
STL9N3LLH5 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 9 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact power management in surface mount designs.
9 A
.022 ohm
S-XDSO-N5
5
UNSPECIFIED
SQUARE
50 W
36 A
NO LEAD
DUAL
STU75N3LLH6
STU75N3LLH6 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 75 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for high-power circuits, it ensures reliable performance with low on-resistance.
.0084 ohm
TO-251
R-PSIP-T3
IN-LINE
NTMS4920NR2G
NTMS4920NR2G by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 136A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating from -55 to 150 °C, it has 0.0043 ohm Drain-Source Resistance and 41pF Feedback Capacitance.
162 mJ
10.6 A
.0043 ohm
41 pF
R-PDSO-G8
8
-55 Cel
2.12 W
40
NTD4809NH-1G
NTD4809NH-1G by Onsemi is a N-channel Power FET with 30V DS breakdown voltage and 130A IDM. Ideal for switching applications, it features a built-in diode, 0.0125 ohm RDS(on), and 52W max power dissipation. Operating in enhancement mode, this MOSFET has a max temp of 175 °C and is designed for through-hole mounting.
112.5 mJ
58 A
.0125 ohm
52 W
130 A
NTB75N03-6G
NTB75N03-6G by Onsemi is a N-channel FET with 30V DS breakdown voltage, 225A IDM, and 0.0065 ohm RDS(on). Ideal for switching applications in enhancement mode, it features a built-in diode and operates in avalanche energy rating of 1500 mJ.
ULTRA LOW RESISTANCE
1500 mJ
.0065 ohm
225 A
NTD24N06-1G
NTD24N06-1G by Onsemi is a single N-channel power FET with 24A max drain current and 62.5W max power dissipation. Ideal for applications requiring high-power switching in enhancement mode operation, such as motor control and power supplies. Operating at up to 175°C, it features metal-oxide semiconductor technology and surface-mount capability for efficient performance.
24 A
62.5 W
IPB120N04S3-02
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; No. of Terminals: 2; Transistor Element Material: SILICON;
1880 mJ
120 A
.0023 ohm
300 W
480 A
IPB70N04S3-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Maximum Drain-Source On Resistance: .0071 ohm; Transistor Element Material: SILICON;
145 mJ
70 A
.0071 ohm
79 W
280 A
IPD70N04S3-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Maximum Feedback Capacitance (Crss): 130 pF; Maximum Pulsed Drain Current (IDM): 280 A;
82 A
.006 ohm
130 pF
AEC-Q101
IPD80N06S3-09
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 107 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-609 Code: e3;
170 mJ
55 V
80 A
107 W
320 A
IPP80N04S3-04
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 136 W; Minimum DS Breakdown Voltage: 40 V; Maximum Drain-Source On Resistance: .0042 ohm;
290 mJ
.0042 ohm
136 W
NTLJD4150PTBG
NTLJD4150PTBG by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, suitable for SWITCHING applications. It features a max IDM of 14A and ID of 3.4A, with an RDS(on) of 0.135 ohm. This MOSFET operates in ENHANCEMENT MODE, has a max power dissipation of 2.3W, and can withstand temperatures from -55 to 150 °C.
3.4 A
2.7 A
.135 ohm
S-PDSO-N6
6
P-CHANNEL
2.3 W
14 A
Other Transistors
STL80N4LLF3
STL80N4LLF3 by STMicroelectronics is an N-channel FET designed for high-efficiency applications. It features a max drain current of 80 A, a breakdown voltage of 40 V, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
20 A
.007 ohm
R-PDSO-N8
80 W
STS15N4LLF3
STS15N4LLF3 by STMicroelectronics is a N-CHANNEL FET with 40V DS Breakdown Voltage and 60A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.007 ohm RDS(on), and operates in ENHANCEMENT MODE up to 150°C.
2000 mJ
15 A
e4
2.7 W
60 A
NICKEL PALLADIUM GOLD
NTD4813NH-1G
NTD4813NH-1G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 90A IDM, and 0.0259 ohm RDS(ON). It is an N-CHANNEL transistor in PLASTIC/EPOXY package for high-current applications like motor control and power supplies.
44.4 mJ
40 A
.0259 ohm
90 A
STB20NM60D
STB20NM60D by STMicroelectronics is a high-performance N-channel MOSFET designed for efficient switching applications. It features a 600V breakdown voltage, 20A max drain current, and 192W power dissipation. Ideal for power management in various electronic devices.
700 mJ
.29 ohm
192 W
STD50N03L-1
STD50N03L-1 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 40 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for power management in various electronic devices.
230 mJ
ISOLATED
.019 ohm
TO-251AB
NOT SPECIFIED
160 A
STD50N03L
STD50N03L by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a max drain current of 40 A and a breakdown voltage of 30 V. It offers low on-resistance at 0.019 Ω and operates up to 175 °C. This compact FET is suitable for high-efficiency power management.
SUM52N20-39P-E3
Vishay Intertechnology
Vishay Intertechnology's SUM52N20-39P-E3 is a N-channel FET with 200V DS breakdown voltage, 100A pulsed drain current, and 0.094 ohm max on-resistance. Ideal for power applications requiring high current handling and low on-resistance in a compact small outline package.
31 mJ
200 V
52 A
.094 ohm
100 A
MATTE TIN OVER NICKEL
NTD4815NH-1G
NTD4815NH-1G by Onsemi is a N-channel power FET with 30V DS breakdown voltage and 87A pulsed drain current. Ideal for switching applications, it features a single configuration with built-in diode and 0.015 ohm max drain-source resistance.
35.6 mJ
8.5 A
6.9 A
32.6 W
87 A
NTD4815NH-35G
NTD4815NH-35G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 87A IDM, and 0.015 ohm RDS(on). Ideal for SWITCHING applications, it features an ENHANCEMENT MODE and 35.6mJ EAS rating. With SILICON element material and TIN finish, it operates up to 175 °C.
STW30NF20
STW30NF20 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 30 A, a breakdown voltage of 200 V, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
140 mJ
30 A
.075 ohm
125 W
STW40NF20
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; No. of Elements: 1; Maximum Drain-Source On Resistance: .045 ohm;
.045 ohm
TO-247
160 W
SPB80N10LG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 2; Peak Reflow Temperature (C): 245; Avalanche Energy Rating (EAS): 700 mJ;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
100 V
.024 ohm
NTLJD3119CTAG
NTLJD3119CTAG by Onsemi is a Power FET with N-CHANNEL and P-CHANNEL configurations. It features 20V DS Breakdown Voltage, 18A Max IDM, and 0.065 ohm RDS(ON). Ideal for applications requiring high power dissipation in small outline packages.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
3.8 A
2.6 A
.065 ohm
N-CHANNEL AND P-CHANNEL
STC5DNF30V
STC5DNF30V by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 4.5 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Its compact surface mount design ensures versatility in various electronic circuits.
4.5 A
.04 ohm
1.3 W
STD90N03L-1
STD90N03L-1 by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a max drain current of 80 A and a breakdown voltage of 30 V. It offers low on-resistance at 0.0057 Ω and operates up to 175 °C. This versatile FET is packaged in a through-hole design for easy integration.
LOW THRESHOLD
350 mJ
.0057 ohm
95 W
STD90N03L
STD90N03L by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for power management in compact electronic devices.
STFV3N150
STFV3N150 from STMicroelectronics is an N-channel FET designed for switching applications, featuring a 1500V breakdown voltage and a max drain current of 2.5A. It operates in enhancement mode with a power dissipation of up to 30W. Ideal for high-voltage circuits, it ensures reliable performance in compact designs.
450 mJ
1500 V
2.5 A
9 ohm
30 W
10 A
STN5PF02V
STN5PF02V by STMicroelectronics is a P-channel MOSFET designed for efficient switching applications. It features a max drain current of 4.2 A, a breakdown voltage of 20 V, and operates at up to 150 °C. Its compact SO package ensures easy surface mounting in various electronic devices.
4.2 A
.1 ohm
R-PDSO-G4
4
2.5 W
STP9NM60N
STP9NM60N by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 26A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
115 mJ
6.5 A
.745 ohm
100 W
26 A
STSJ100NHS3LL
STSJ100NHS3LL by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 100 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
1800 mJ
70 W
FDD8444L
Fairchild Semiconductor
FDD8444L by Fairchild Semiconductor is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 50A Drain Current. Ideal for SWITCHING applications, it features an EAS of 295mJ, 0.0107 ohm RDS(on), and operates in ENHANCEMENT MODE.
295 mJ
50 A
16 A
.0107 ohm
153 W
STW11NK90Z
STW11NK90Z by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 900V breakdown voltage, 36.8A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
HIGH VOLTAGE
400 mJ
900 V
9.2 A
.98 ohm
TO-247AC
200 W
36.8 A
STI22NM60N
STI22NM60N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 16A max drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
300 mJ
.22 ohm
TO-262AA
64 A
IRF6645TR1PBF
International Rectifier
IRF6645TR1PBF by International Rectifier is a N-CHANNEL FET for SWITCHING applications. It features 100V DS Breakdown Voltage, 45A IDM, and 0.035 ohm RDS(on). With a max power dissipation of 42W and operating temperature up to 150°C, it's ideal for high-power switching circuits.
29 mJ
5.7 A
.035 ohm
R-XBCC-N3
e1
CHIP CARRIER
42 W
45 A
TIN SILVER COPPER
BOTTOM
IRFI4024H-117P
IRFI4024H-117P by International Rectifier is a N-channel Power FET with 55V DS breakdown voltage, 44A IDM, and 0.06 ohm RDS(on). It is used in amplifier applications due to its series connected configuration with built-in diode. The transistor operates in enhancement mode at up to 150°C temperature.
7.4 mJ
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
11 A
.06 ohm
R-PSFM-T5
14 W
44 A
AMPLIFIER
NTMFS4837NHT3G
NTMFS4837NHT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 225A IDM, and 0.008 ohm RDS(ON). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Features include BUILT-IN DIODE, METAL-OXIDE SEMICONDUCTOR tech, and 144mJ EAS rating.
144 mJ
10.2 A
R-PDSO-F6
FLAT
NTMFS4841NHT1G
NTMFS4841NHT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 177A IDM, and 0.0116 ohm RDS(on). Ideal for SWITCHING applications due to its 41.7W Power Dissipation, METAL-OXIDE SEMICONDUCTOR technology, and ENHANCEMENT MODE operation.
98 mJ
59 A
.0116 ohm
41.7 W
177 A
NTMFS4841NHT3G
NTMFS4841NHT3G by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 177A, EAS of 98mJ, and ID of 59A. With 0.0116 ohm RDS(on), this MOSFET operates in ENHANCEMENT MODE at up to 150 °C.
STB60N55F3
STB60N55F3 from STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 55 V, and operates at up to 175 °C. Ideal for power management in compact designs, it ensures reliable performance with low on-resistance.
390 mJ
110 W
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