Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.
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STS9P2UH7
STMicroelectronics
STS9P2UH7 by STMicroelectronics is a P-CHANNEL FET with 9A max drain current and 2.7W power dissipation. Ideal for applications requiring high power efficiency in surface mount configurations, such as power management systems or motor control circuits operating up to 150 °C.
SINGLE
9 A
METAL-OXIDE SEMICONDUCTOR
1
150 Cel
NOT SPECIFIED
P-CHANNEL
2.7 W
Other Transistors
YES
STT7P2UH7
STT7P2UH7 by STMicroelectronics is a P-CHANNEL FET with 20V DS Breakdown Voltage and 28A IDM. It is used for SWITCHING applications in ENHANCEMENT MODE, featuring 0.085 ohm Drain-Source On Resistance. The transistor has GULL WING terminals, operates at -55 °C, and comes in a SMALL OUTLINE package style.
SINGLE WITH BUILT-IN DIODE
20 V
7 A
.085 ohm
R-PDSO-G6
6
ENHANCEMENT MODE
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
28 A
GULL WING
DUAL
SWITCHING
SILICON
STS9NF30L
STS9NF30L by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 36A IDM, and 0.035 ohm RDS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150 °C. This 8-terminal transistor features GULL WING terminals and a SMALL OUTLINE package style.
30 V
.035 ohm
R-PDSO-G8
e4
8
260
N-CHANNEL
2.5 W
36 A
Not Qualified
FET General Purpose Power
NICKEL PALLADIUM GOLD
40
NTMFS5C404NLT3G
Onsemi
NTMFS5C404NLT3G by Onsemi is a single N-channel power FET with a max drain current of 339A and power dissipation of 167W. Utilizes metal-oxide semiconductor technology, operates up to 150 °C, ideal for high-power applications requiring efficient switching and control.
339 A
e3
167 W
Matte Tin (Sn) - annealed
30
NTMFS5C646NLT3G
NTMFS5C646NLT3G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 93A ID, and 0.0063 ohm RDS(ON). It operates in Enhancement Mode with 750A IDM and 185mJ EAS. Ideal for power management applications due to its high power dissipation of 79W and small outline package style.
185 mJ
DRAIN
60 V
93 A
.0063 ohm
R-PDSO-F5
5
175 Cel
79 W
750 A
FLAT
NVMFS5C612NLT3G
NVMFS5C612NLT3G by Onsemi is a single N-channel Power FET with 235A max drain current and 167W max power dissipation. Ideal for high-power applications, it operates at up to 175 °C and features metal-oxide semiconductor technology. Suitable for surface mount assembly with matte tin finish, it offers reliable performance in demanding environments.
235 A
NVMFS5C612NLWFT1G
NVMFS5C612NLWFT1G by Onsemi is a single N-channel Power FET with 235A max drain current and 167W max power dissipation. Utilizes metal-oxide semiconductor technology, operates up to 175 °C, ideal for high-power applications requiring efficient switching capabilities.
NVMFS5C612NLWFT3G
NVMFS5C612NLWFT3G by Onsemi is a single N-channel Power FET with 235A max drain current and 167W max power dissipation. Ideal for high-power applications, it operates at up to 175 °C and features metal-oxide semiconductor technology.
IRFH5106TR2PBF
International Rectifier
IRFH5106TR2PBF by International Rectifier is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 400A and EAS of 96mJ, operating in ENHANCEMENT MODE at up to 150°C. This surface mount transistor has a Drain Current of 21A and 0.0056 ohm On Resistance.
96 mJ
100 A
21 A
.0056 ohm
R-PDSO-N5
114 W
400 A
MATTE TIN
NO LEAD
STF16NK60Z
STF16NK60Z by STMicroelectronics is a N-CHANNEL FET with 620V DS Breakdown Voltage, ideal for SWITCHING applications. It features 56A IDM and 0.42 ohm RDS(on), operating in ENHANCEMENT MODE at up to 150 °C. The transistor's package is RECTANGULAR with THROUGH-HOLE terminals, offering 40W Pdiss and EAS of 360mJ.
360 mJ
ISOLATED
620 V
14 A
.42 ohm
TO-220AB
R-PSFM-T3
3
FLANGE MOUNT
40 W
56 A
NO
THROUGH-HOLE
STP150N3LLH6
STP150N3LLH6 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 320A IDM, 525mJ EAS, and 0.0049 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 110W at 175 °C.
525 mJ
80 A
.0049 ohm
110 W
320 A
AOD4N60
Alpha & Omega Semiconductor
AOD4N60 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Features include 14A max pulsed drain current, 235mJ avalanche energy rating, and 2.3ohm max drain-source resistance. Suitable for enhancement mode operation in high-power circuits.
235 mJ
600 V
4 A
2.3 ohm
TO-252
R-PSSO-G2
2
104 W
NTE2395
Nte Electronics
NTE2395 by Nte Electronics is a Power FET with 60V DS Breakdown Voltage, 200A IDM, and 0.028 ohm RDS. Ideal for SWITCHING applications due to its N-CHANNEL configuration and ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with PLASTIC/EPOXY body material.
100 mJ
50 A
.028 ohm
150 W
200 A
NTE2987
NTE2987 by Nte Electronics is a Power FET with 100V DS Breakdown Voltage, 80A IDM, and 0.12 ohm RDS(on). Ideal for SWITCHING applications in ENHANCEMENT MODE. Features N-CHANNEL configuration in PLASTIC/EPOXY package with THROUGH-HOLE terminals.
FAST SWITCHING
120 mJ
100 V
20 A
.12 ohm
DMJ7N70SK3-13
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 1.25 ohm; Terminal Position: SINGLE; JEDEC-95 Code: TO-252;
HIGH RELIABILITY
700 V
3.9 A
1.25 ohm
15.6 A
AEC-Q101
R5007FNX
ROHM
ROHM R5007FNX is a N-CHANNEL FET with 500V DS breakdown voltage, 28A IDM, and 1.3Ω max RDS(on). Ideal for switching applications, it features a built-in diode and operates in enhancement mode. The transistor's package style is flange mount with isolated case connection.
3.2 mJ
500 V
1.3 ohm
10
R6020FNJTL
ROHM R6020FNJTL is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for SWITCHING applications. Features include 80A max pulsed drain current, 0.28 ohm max drain-source resistance, and 26.7mJ avalanche energy rating. Suitable for ENHANCEMENT MODE operation in various electronic devices requiring high power handling capabilities.
26.7 mJ
.28 ohm
FDB86363_F085
Fairchild Semiconductor
Fairchild Semiconductor's FDB86363_F085 is a N-CHANNEL Power FET with 80V DS Breakdown Voltage. It has 110A Drain Current, 0.0024 ohm On Resistance, and 300W Power Dissipation. Ideal for SWITCHING applications in ENHANCEMENT MODE, it comes in a PLASTIC/EPOXY package with GULL WING terminals.
512 mJ
80 V
110 A
.0024 ohm
TO-263AB
300 W
MTB3N60ET4
MTB3N60ET4 by Onsemi is a N-CHANNEL FET with 3A max drain current and 75W power dissipation. Ideal for applications requiring high power efficiency in surface mount configurations, such as power supplies and motor control systems.
3 A
e0
235
75 W
TIN LEAD
STB11NM60-1
STB11NM60-1 by STMicroelectronics is a N-channel Power FET with 600V DS breakdown voltage, 44A IDM, and 0.45 ohm RDS(on). Ideal for switching applications, it features a single configuration with built-in diode and operates in enhancement mode. The transistor has a max power dissipation of 110W and can withstand temperatures up to 150 °C.
350 mJ
11 A
.45 ohm
TO-262AA
R-PSIP-T3
IN-LINE
44 A
Matte Tin (Sn)
STB20NM50-1
STB20NM50-1 by STMicroelectronics is a N-channel FET with 500V DS breakdown voltage, 80A IDM, and 0.25 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with 110W power dissipation and 150 °C max temperature.
650 mJ
.25 ohm
TIN
STB45NF06
STB45NF06 by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, 38A Drain Current, and 0.028 ohm On Resistance. It is used for SWITCHING applications in ENHANCEMENT MODE, with 152A Pulsed Drain Current capability.
260 mJ
38 A
80 W
152 A
STB80NF55-08T4
STB80NF55-08T4 by STMicroelectronics is a N-channel FET with 55V DS breakdown voltage, 80A max drain current, and 0.008 ohm RDS(on). Ideal for switching applications, it features a single configuration with built-in diode and operates in enhancement mode. Suitable for surface mount assembly, it has a max power dissipation of 300W and can withstand temperatures up to 175 °C.
1000 mJ
55 V
.008 ohm
245
STB80PF55T4
STB80PF55T4 by STMicroelectronics is a P-CHANNEL FET with 55V DS Breakdown Voltage, 80A Drain Current, and 0.018 ohm On Resistance. Ideal for SWITCHING applications due to its 320A Pulsed Drain Current and 1.4mJ Avalanche Energy Rating in a small outline package.
1.4 mJ
.018 ohm
STB85NF3LLT4
STB85NF3LLT4 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 85A Drain Current, and 0.0095 ohm On Resistance. Ideal for SWITCHING applications due to its 340A Pulsed Drain Current capability. Package style is SMALL OUTLINE with GULL WING terminals for surface mount assembly.
85 A
.0095 ohm
340 A
STD4NS25T4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; JESD-30 Code: R-PSSO-G2; Package Shape: RECTANGULAR;
250 V
1.1 ohm
50 W
16 A
STD60NF3LLT4
STD60NF3LLT4 by STMicroelectronics is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 60A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 240A Pulsed Drain Current, and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it has a max power dissipation of 100W and can withstand temperatures up to 175 °C.
700 mJ
60 A
.0105 ohm
TO-252AA
100 W
240 A
STE110NS20FD
STE110NS20FD by STMicroelectronics is a N-CHANNEL FET for SWITCHING applications. It features 200V DS Breakdown Voltage, 440A IDM, and 0.024 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 500W and can handle up to 150 °C temperature.
AVALANCHE RATED
750 mJ
200 V
.024 ohm
R-XUFM-X4
4
UNSPECIFIED
500 W
440 A
NICKEL
UPPER
STE48NM50
STE48NM50 by STMicroelectronics is a N-CHANNEL Power FET with 500V DS Breakdown Voltage, 192A IDM, and 0.1 ohm RDS(on). Ideal for SWITCHING applications due to its 450W Pdiss, EAS of 810mJ, and ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with SILICON transistor element material.
810 mJ
48 A
.1 ohm
R-PUFM-X4
450 W
192 A
STE70NM50
STE70NM50 by STMicroelectronics is a N-CHANNEL Power FET with 500V DS Breakdown Voltage and 70A Drain Current. Ideal for SWITCHING applications, it features a max Pulsed Drain Current of 280A and an Avalanche Energy Rating of 1400mJ. Operating in ENHANCEMENT MODE, this transistor has a 0.05 ohm On Resistance and can handle up to 460W power dissipation.
1400 mJ
70 A
.05 ohm
460 W
280 A
STP16NS25
STP16NS25 by STMicroelectronics is a N-CHANNEL FET with 250V DS breakdown voltage, ideal for SWITCHING applications. It features 64A max pulsed drain current and 0.28 ohm max drain-source resistance. Operating in enhancement mode, it has a power dissipation of 140W and can handle up to 150 °C temperature.
600 mJ
140 W
64 A
STP20NM50FP
STP20NM50FP by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 80A IDM, 650mJ EAS, and 0.25 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 35W at 150 °C.
35 W
STP8NM60
STP8NM60 by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, 32A IDM, and 1 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 100W.
200 mJ
8 A
1 ohm
32 A
STP8NS25FP
STP8NS25FP by STMicroelectronics is a N-CHANNEL FET with 250V DS Breakdown Voltage, 32A IDM, and 0.45 ohm RDS(on). Ideal for SWITCHING applications due to its 30W power dissipation and ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with ISOLATED case connection.
30 W
STP8NS25
STP8NS25 by STMicroelectronics is a N-CHANNEL FET with 250V DS Breakdown Voltage, 32A IDM, and 0.45 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it offers high power dissipation of 80W at max temp of 150 °C.
STP90NF03L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Transistor Element Material: SILICON; Terminal Finish: MATTE TIN;
90 A
.0065 ohm
360 A
STSJ25NF3LL
STMicroelectronics' STSJ25NF3LL is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 100A IDM and 0.013 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 150 °C. The PLASTIC/EPOXY package with GULL WING terminals ensures efficient heat dissipation and reliable performance.
12 A
.013 ohm
70 W
STW20NM50
STW20NM50 by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A IDM, 650mJ EAS, and 0.25 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 214W at 150 °C.
TO-247
214 W
STY100NS20FD
STY100NS20FD by STMicroelectronics is a N-CHANNEL FET with 200V DS Breakdown Voltage, 400A IDM, and 0.024 ohm RDS. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 150 °C, making it suitable for high-power tasks.
STB70NF03L-1
STB70NF03L-1 by STMicroelectronics is a N-channel FET with 30V DS breakdown voltage, 280A IDM, and 0.0095 ohm RDS(on). Ideal for switching applications due to its single configuration with built-in diode. Operates in enhancement mode at max temp of 175 °C.
500 mJ
STS5DNF20V
STS5DNF20V by STMicroelectronics is an N-CHANNEL FET with 20V DS Breakdown Voltage and 5A Drain Current. Ideal for SWITCHING applications, it features a dual-element configuration with built-in diode, GULL WING terminals, and operates in ENHANCEMENT MODE.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
5 A
.045 ohm
2 W
Nickel/Palladium/Gold (Ni/Pd/Au)
STT3PF30L
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; JESD-609 Code: e3; Terminal Finish: MATTE TIN;
LOW THRESHOLD
2.4 A
.2 ohm
1.6 W
10 A
NDBA180N10BT4H
NDBA180N10BT4H by Onsemi is a Power FET with 100V DS Breakdown Voltage, 600A IDM, and 0.0033 ohm RDS. Ideal for SWITCHING applications, it features an N-CHANNEL configuration in a PLASTIC/EPOXY package with GULL WING terminals.
ULTRA LOW RESISTANCE
451 mJ
.0033 ohm
600 A
STF150N10F7
STF150N10F7 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, 260A IDM, and 0.0042 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at temperatures ranging from -55 to 175 °C.
495 mJ
65 A
.0042 ohm
67 pF
260 A
STF80N10F7
STF80N10F7 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, 40A Drain Current, and 0.01 ohm On Resistance. It is used for SWITCHING applications in ENHANCEMENT MODE with 160A Pulsed Drain Current. Operating range from -55 to 175 °C.
ULTRA LOW-ON RESISTANCE
40 A
.01 ohm
160 A
STFW38N65M5
STFW38N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 120A IDM, 660mJ EAS, and 0.095 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with SILICON element material and METAL-OXIDE SEMICONDUCTOR technology.
660 mJ
650 V
30 A
.095 ohm
120 A
STH245N75F3-6
STH245N75F3-6 by STMicroelectronics is a N-channel Power FET with 75V DS breakdown voltage, 720A IDM, and 0.003 ohm RDS(on). It is used for switching applications in automotive industry due to AEC-Q101 standard compliance.
75 V
180 A
.003 ohm
R-PSSO-G6
720 A
STH80N10F7-2
STH80N10F7-2 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, 320A IDM, and 0.0095 ohm RDS. It's used for SWITCHING applications in ENHANCEMENT MODE at -55 to 175 °C, with 110W Pdiss and GULL WING terminals.
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