Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.
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IRFZ24NSTRR
International Rectifier
IRFZ24NSTRR by International Rectifier is a N-CHANNEL Power FET with 55V DS Breakdown Voltage. It is used for SWITCHING applications, featuring 68A IDM and 71mJ EAS. This SINGLE transistor has a 0.07 ohm RDS(on) and operates in ENHANCEMENT MODE at up to 175°C ambient temperature.
AVALANCHE RATED, HIGH RELIABILITY
71 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
55 V
17 A
.07 ohm
METAL-OXIDE SEMICONDUCTOR
TO-263AB
R-PSSO-G2
e0
1
2
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
N-CHANNEL
45 W
68 A
Not Qualified
FET General Purpose Power
YES
TIN LEAD
GULL WING
SINGLE
SWITCHING
SILICON
IRFZ34NSTRR
IRFZ34NSTRR by International Rectifier is a N-CHANNEL Power FET with 55V DS Breakdown Voltage and 100A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.04 ohm RDS(on), and 175°C max operating temp. Suitable for surface mount designs in power electronics due to its high current handling capability and low on-resistance.
130 mJ
29 A
.04 ohm
225
68 W
100 A
Tin/Lead (Sn/Pb)
30
IRLR024NTRR
IRLR024NTRR by International Rectifier is a N-CHANNEL FET with 55V DS Breakdown Voltage and 17A Drain Current. Ideal for power applications, it operates in Enhancement Mode with 0.065 ohm On Resistance, offering high efficiency in small outline packages.
LOGIC LEVEL COMPATIBLE
.065 ohm
TO-252AA
38 W
FET General Purpose Powers
IRLR2905TRR
IRLR2905TRR by International Rectifier is an N-CHANNEL FET with a 55V DS breakdown voltage and 0.03 ohm max RDS(on). Ideal for switching applications, it features a single configuration with built-in diode, 160A IDM, and 210mJ EAS. This MOSFET operates in enhancement mode, has GULL WING terminals, and comes in a small outline package.
ULTRA LOW RESISTANCE, AVALANCHE RATED
210 mJ
42 A
.03 ohm
160 A
IRLZ44NSTRR
IRLZ44NSTRR by International Rectifier is a N-CHANNEL Power FET with 55V DS Breakdown Voltage and 160A IDM. Ideal for SWITCHING applications, it features 0.025 ohm Drain-Source On Resistance and 210mJ Avalanche Energy Rating.
LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY
47 A
.025 ohm
STW13NB60
STMicroelectronics
STW13NB60 by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 52A IDM, 700mJ EAS, and 0.54 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 190W at 150 °C.
AVALANCHE RATED
700 mJ
600 V
13 A
.54 ohm
TO-247
R-PSFM-T3
e3
3
150 Cel
FLANGE MOUNT
190 W
52 A
NO
MATTE TIN
THROUGH-HOLE
2382
Nte Electronics
The Nte Electronics 2382 is a single N-channel power FET with a min DS breakdown voltage of 100V and max drain current of 8A. Ideal for switching applications, it features an operating mode in enhancement mode technology with 0.5 ohm max drain-source resistance.
100 V
8 A
.5 ohm
TO-220AB
IRFR6215TR
IRFR6215TR is a P-CHANNEL FET with 150V DS Breakdown Voltage, 44A IDM, and 0.295 ohm RDS. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it offers high power dissipation of 110W and can withstand up to 175°C temperature.
310 mJ
150 V
.295 ohm
240
P-CHANNEL
110 W
44 A
Other Transistors
DMP2066LSD-13
Diodes Incorporated
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: PLASTIC/EPOXY;
HIGH RELIABILITY
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
20 V
5.8 A
R-PDSO-G8
8
260
2 W
20 A
DUAL
STB60NE06L-16T4
STB60NE06L-16T4 by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, 240A IDM, and 0.016 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175 °C, making it suitable for high-power tasks.
LOW THRESHOLD
400 mJ
60 V
60 A
.016 ohm
150 W
240 A
STP60NE06L-16
STP60NE06L-16 by STMicroelectronics is a N-channel FET with 60V DS breakdown voltage, 240A IDM, and 0.016 ohm RDS(on). Ideal for switching applications due to its single configuration with built-in diode. Operates in enhancement mode at max temp of 175 °C.
BUK204-50Y,118
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Transistor Element Material: SILICON; Additional Features: LOGIC LEVEL COMPATIBLE, ESD PROTECTED;
LOGIC LEVEL COMPATIBLE, ESD PROTECTED
.1 ohm
R-PSSO-G4
4
BUK205-50Y118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Terminal Position: SINGLE; No. of Terminals: 4;
.06 ohm
BUK7524-55,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Additional Features: ESD PROTECTION; Minimum DS Breakdown Voltage: 55 V;
ESD PROTECTION
80 mJ
45 A
.024 ohm
180 A
STP19NB20
STMicroelectronics STP19NB20 is a N-CHANNEL FET with 200V DS breakdown voltage, ideal for switching applications. It features 76A max pulsed drain current and 0.18 ohm max drain-source resistance. With a package style of flange mount, it operates in enhancement mode at up to 150 °C.
580 mJ
200 V
19 A
.18 ohm
125 W
76 A
STP4NB50
STP4NB50 by STMicroelectronics is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. It features 15.2A max pulsed drain current and 220mJ avalanche energy rating. The transistor operates in enhancement mode, with a max power dissipation of 80W at 150 °C.
220 mJ
500 V
3.8 A
2.8 ohm
80 W
15.2 A
STP50NE08
STP50NE08 by STMicroelectronics is a N-CHANNEL FET with 80V DS Breakdown Voltage, 200A IDM, and 0.024 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175 °C temperature range.
300 mJ
80 V
50 A
200 A
TIN
STP50NE10
STP50NE10 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 200A IDM, 300mJ EAS, and 0.027 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max temp of 175 °C, making it suitable for high-power circuits.
.027 ohm
STP5NB40
STP5NB40 by STMicroelectronics is a N-CHANNEL FET with 400V DS Breakdown Voltage and 19A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 80W and operates in ENHANCEMENT MODE at up to 150 °C.
200 mJ
400 V
4.7 A
1.8 ohm
IRF7413A
IRF7413A by International Rectifier is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 58A IDM, 260mJ EAS, and 0.0135 ohm RDS(ON). With GULL WING terminals and ENHANCEMENT MODE operation, it offers high performance in a SMALL OUTLINE package.
260 mJ
30 V
11 A
12 A
.0135 ohm
MS-012AA
2.5 W
58 A
TPIC2701N
Texas Instruments
TPIC2701N by Texas Instruments is a N-CHANNEL FET with 7 elements, built-in diode, and 60V DS breakdown voltage. It's commonly used for switching applications due to its 3A pulsed drain current, 22mJ avalanche energy rating, and 0.9 ohm max on-resistance. Operating in enhancement mode at up to 150°C, it offers high performance in a compact IN-LINE package.
22 mJ
COMMON SOURCE, 7 ELEMENTS WITH BUILT-IN DIODE
.5 A
.9 ohm
MS-001BB
R-PDIP-T16
7
16
IN-LINE
NOT SPECIFIED
1.4 W
3 A
VNV35N07
VNV35N07 by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.035 ohm Max RDS. It operates in Enhancement Mode, has 10 terminals, and can handle up to 125W power dissipation. Ideal for applications requiring high power handling in compact spaces like automotive electronics.
COMPLEX
.035 ohm
R-PDSO-G10
10
250
1350 ns
800 ns
VNP35N07FI
VNP35N07FI by STMicroelectronics is an N-channel Power FET with a 60V DS breakdown voltage and 0.035 ohm max RDS(on). It operates in enhancement mode with 800ns turn-on time and 1350ns turn-off time. Ideal for power management applications requiring high efficiency and performance.
40 W
VNB35N07
VNB35N07 by STMicroelectronics is an N-channel Power FET with 60V DS breakdown voltage, 0.035 ohm RDS(on), and 125W power dissipation. Ideal for enhancement mode operation in applications requiring high efficiency and fast switching such as power supplies and motor control systems.
TO-263
STP60NE06-16
STP60NE06-16 by STMicroelectronics is a N-channel Power FET with 60V DS breakdown voltage and 240A IDM. Ideal for switching applications, it features a single configuration with built-in diode and 0.016 ohm max RDS(on). Operating in enhancement mode, this MOSFET has a max power dissipation of 150W at 175°C.
350 mJ
STW50NB20
STW50NB20 by STMicroelectronics is a N-CHANNEL FET with 200V DS Breakdown Voltage, 50A Drain Current, and 0.055 ohm On Resistance. It is used for SWITCHING applications in ENHANCEMENT MODE with 280W Power Dissipation and 150 °C Operating Temperature.
1000 mJ
.055 ohm
280 W
STD5N20T4
STD5N20T4 by STMicroelectronics is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 20A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.8 ohm RDS(on), and operates in ENHANCEMENT MODE. This small outline transistor has a max power dissipation of 50W and can handle up to 5A drain current.
5 A
.8 ohm
50 W
NTD4965N-35G
Onsemi
NTD4965N-35G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 30V DS Breakdown Voltage, 248A Pulsed Drain Current, and 0.01 ohm Drain-Source On Resistance. Ideal for high-power switching circuits requiring efficient performance in an IN-LINE package style.
60 mJ
.01 ohm
R-PSIP-T3
38.5 W
248 A
NTD4969N-35G
NTD4969N-35G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 150A IDM, and 0.019 ohm RDS(on). Ideal for SWITCHING applications, it features an N-CHANNEL configuration in PLASTIC/EPOXY package with built-in DIODE. Operating at up to 175 °C, it has a max power dissipation of 26.3W.
15 mJ
41 A
9.4 A
.019 ohm
26.3 W
150 A
NTD4970NT4G
NTD4970NT4G by Onsemi is an N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 130A and EAS of 18mJ, suitable for high-power operations. With a 0.021 ohm Drain-Source On Resistance, it offers efficient performance in ENHANCEMENT MODE operation at up to 175 °C.
18 mJ
36 A
8.5 A
.021 ohm
24.6 W
130 A
NTD5862N-1G
NTD5862N-1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 335A IDM, and 0.0057 ohm RDS. Ideal for applications requiring high drain current handling in enhancement mode operation. Package style: IN-LINE, Terminal finish: TIN, Case connection: DRAIN.
205 mJ
90 A
.0057 ohm
335 A
NTMFS5834NLT1G
NTMFS5834NLT1G by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS breakdown voltage, and 276A pulsed drain current. Ideal for applications requiring high power dissipation in a small outline package, such as power supplies and motor control systems.
48 mJ
40 V
75 A
.0136 ohm
R-PDSO-F5
5
107 W
276 A
Tin (Sn)
FLAT
NTTFS4929NTAG
NTTFS4929NTAG by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 30V DS Breakdown Voltage, 69A Max Pulsed Drain Current, and 0.017 ohm Max RDS(on). With a small outline package style and operating temperature up to 150 °C, it is ideal for high-power switching circuits.
34 A
10.6 A
.017 ohm
S-PDSO-F5
SQUARE
22.3 W
69 A
Matte Tin (Sn) - annealed
NTTFS5826NLTAG
NTTFS5826NLTAG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 133A IDM, and 0.032 ohm RDS(on). Ideal for SWITCHING applications in ENHANCEMENT MODE operation. Features include N-CHANNEL polarity, built-in DIODE, and METAL-OXIDE SEMICONDUCTOR technology.
20 mJ
.032 ohm
133 A
NTTFS5826NLTWG
NTTFS5826NLTWG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 133A IDM, and 0.032 ohm RDS(on). It is an N-CHANNEL transistor for SWITCHING applications. This MOSFET operates in ENHANCEMENT MODE and has a max temp of 175 °C suitable for various electronic devices.
NVD5862NT4G
NVD5862NT4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 367A IDM, and 0.0057 ohm RDS(on). Ideal for power applications requiring high drain current handling and low on-resistance. Suitable for use in enhancement mode operation at up to 175 °C temperature.
98 A
18 A
115 W
367 A
NVD5863NLT4G
NVD5863NLT4G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 442A IDM, and 0.011 ohm RDS(on). It is an N-CHANNEL transistor in PLASTIC/EPOXY package ideal for power applications requiring high current handling capabilities.
320 mJ
82 A
.011 ohm
96 W
442 A
NVD5865NLT4G
NVD5865NLT4G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 203A IDM, and 0.019 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance. Enhances performance in power management systems with its high current handling capabilities.
36 mJ
38 A
10 A
-55 Cel
49 W
203 A
AEC-Q101
NVD5867NLT4G
NVD5867NLT4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 85A IDM, and 0.05 ohm RDS(ON). Ideal for power applications due to its 43W Pdiss, 175°C max temp, and built-in diode. Suitable for surface mount designs with GULL WING terminals in a RECTANGULAR package.
22 A
6 A
.05 ohm
43 W
85 A
NVMFS4841NT1G
NVMFS4841NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 336A IDM, and 0.0114 ohm RDS(ON). Ideal for power management applications in automotive industry due to AEC-Q101 standard compliance.
180 mJ
89 A
16 A
.0114 ohm
112 W
336 A
NVTFS4823NTAG
NVTFS4823NTAG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 198A IDM, and 0.0175 ohm RDS(on). Ideal for power applications requiring high current handling in a compact form factor. Operating in enhancement mode, it offers efficient performance up to 175°C with a max power dissipation of 21W.
28.8 mJ
30 A
.0175 ohm
21 W
198 A
NVTFS4823NTWG
NVTFS4823NTWG by Onsemi is a Power FET with 30V DS Breakdown Voltage, 198A IDM, and 0.0175 ohm RDS(on). Ideal for applications requiring high drain current handling in enhancement mode operation. Suitable for power management systems due to its high power dissipation of 21W and small outline package style.
NVTFS5811NLTAG
NVTFS5811NLTAG by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS breakdown voltage, and 354A pulsed drain current. It is used in applications requiring high power dissipation, such as automotive systems and industrial equipment due to its 21W max power dissipation and small outline package style.
65 mJ
40 A
354 A
NVTFS5811NLTWG
NVTFS5811NLTWG by Onsemi is a Power FET with 40V DS Breakdown Voltage, 354A IDM, and 0.01 ohm RDS(on). Ideal for applications requiring high power dissipation in a small outline package. Enhances performance in electronic devices operating at up to 175 °C.
NVTFS5826NLTAG
NVTFS5826NLTAG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 127A IDM, and 0.032 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
7.6 A
3.2 W
127 A
NVTFS5826NLTWG
NVTFS5826NLTWG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 127A IDM, and 0.032 ohm RDS(on). Ideal for applications requiring high power dissipation in a compact form factor. Suitable for use in enhancement mode operation at temperatures up to 175 °C.
STB155N3LH6
STB155N3LH6 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 320A IDM, and 0.004 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 110W.
ULTRA-LOW RESISTANCE
525 mJ
80 A
.004 ohm
TO-252
245
320 A
NTMFS4925NT3G
Power Field-Effect Transistors; JESD-609 Code: e3; Terminal Finish: MATTE TIN; Maximum Drain Current (Abs) (ID): 48 A; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1;
48 A
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